Motorola BSS64LT1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
80 Vdc
Collector–Base Voltage V
CBO
120 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
TA = 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction to Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature TJ, T
stg
–55 to +150 °C
DEVICE MARKING
BSS64LT1 = AM
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 4.0 mAdc)
V
(BR)CEO
80 —
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc)
V
(BR)CBO
120 —
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 mAdc)
V
(BR)EBO
5.0 —
Vdc
Collector Cutoff Current
(VCE = 90 Vdc)
(TA = 150°C)
I
CBO
—
—
0.1
500
µAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc)
I
EBO
— 200
nAdc
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by BSS64LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
REV 1
BSS64LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(VCE = 1.0 Vdc, IC = 10 mAdc)
H
FE
20 —
—
Collector–Emitter Saturation Voltage
(IC = 4.0 mAdc, IB = 400 µAdc)
(IC = 50 mAdc, IB = 15 mAdc)
V
CE(sat)
—
—
0.15
0.2
Vdc
Forward Base–Emitter Voltage V
BE(sat)
— — —
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz)
f
T
60 —
MHz
Output Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
C
ob
— 20
pF
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