Motorola BSS63LT1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–100 Vdc
Collector–Emitter Voltage
RBE = 10 kΩ
V
CER
–110
Vdc
Collector Current — Continuous I
C
–100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
TA = 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature TJ, T
stg
–55 to +150 °C
DEVICE MARKING
BSS63LT1 = T1
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –100 µAdc)
V
(BR)CEO
–100 — —
Vdc
Collector–Emitter Breakdown Voltage
(IC = –10 µAdc, IE = 0, RBE = 10 kΩ)
V
(BR)CER
–110 — —
Vdc
Collector–Base Breakdown Voltage
(IE = –10 mAdc, IE = 0)
V
(BR)CBO
–110 — —
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 mAdc)
V
(BR)EBO
–6.0 — —
Vdc
Collector Cutoff Current
(VCB = –90 Vdc, IE = 0)
I
CBO
— — –100
nAdc
Collector Cutoff Current
(VCE = –110 Vdc, RBE = 10 kΩ)
I
CER
— — –10
µAdc
Emitter Cutoff Current
(VEB = –6.0 Vdc, IC = 0)
I
EBO
— — –200
nAdc
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by BSS63LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
REV 1
BSS63LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –25 mAdc, VCE = –1.0 Vdc)
h
FE
30
30
—
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = –25 mAdc, IB = –2.5 mAdc)
V
CE(sat)
— — –250
mVdc
Base–Emitter Saturation Voltage
(IC = –25 mAdc, IB = –2.5 mAdc)
V
BE(sat)
— — –900
mVdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –25 mAdc, VCE = –5.0 Vdc, f = 20 MHz)
f
T
50 95 —
MHz
Case Capacitance
(IE = IC = 0, VCB = –10 Vdc, f = 1.0 MHz)
C
C
— — 20
pF
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