Motorola BSP52T1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
This NPN small signal darlington transistor is designed for use in switching
applications, such as print hammer, relay, solenoid and lamp drivers. The device is
housed in the SOT-223 package, which is designed for medium power surface mount
applications.
• The SOT-223 Package can be soldered using wave or reflow. The formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die
• Available in 12 mm Tape and Reel
Use BSP52T1 to order the 7 inch/1000 unit reel
Use BSP52T3 to order the 13 inch/4000 unit reel
• PNP Complement is BSP62T1
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector-Emitter Voltage V
CES
80 Vdc
Collector-Base Voltage V
CBO
90 Vdc
Emitter-Base Voltage V
EBO
5.0 Vdc
Collector Current I
C
500 mAdc
Total Power Dissipation @ TA = 25°C
(1)
Derate above 25°C
P
D
0.8
6.4
Watts
mW/°C
Operating and Storage Temperature Range TJ, T
stg
–65 to 150 °C
DEVICE MARKING
AS3
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance – Junction-to-Ambient (surface mounted) R
θJA
156 °C/W
Maximum Temperature for Soldering Purposes
Time in Solder Bath
T
L
260
10
°C
Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BSP52T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
MEDIUM POWER
NPN SILICON
DARLINGTON
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
TO-261AA
1
2
3
4
COLLECTOR 2,4
BASE
1
EMITTER 3
REV 1
BSP52T1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(continued) (T
A
= 25°C unless otherwise noted)
Characteristics
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V
(BR)CBO
90 —
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V
(BR)EBO
5.0 —
Vdc
Collector-Emitter Cutoff Current
(VCE = 80 Vdc, VBE = 0)
I
CES
— 10
µAdc
Emitter-Base Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
I
EBO
— 10
µAdc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
h
FE
1000
2000
—
—
—
Collector-Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
V
CE(sat)
— 1.3
Vdc
Base-Emitter On Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
V
BE(on)
— 1.9
Vdc
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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