Motorola BCW68GLT1, BCW68GLT1 Datasheet

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

  

PNP Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

–45 Vdc

Collector–Base Voltage V

CBO

–60 Vdc

Emitter–Base Voltage V

EBO

–5.0 Vdc

Collector Current — Continuous I

C

–800 mAdc

DEVICE MARKING

BCW68GLT1 = DH

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR-5 Board

(1)

TA = 25°C
Derate above 25°C

P

D

225

1.8

mW

mW/°C

Thermal Resistance, Junction to Ambient R

θJA

556 °C/W

Total Device Dissipation

Alumina Substrate,

(2)

TA = 25°C

Derate above 25°C

P

D

300

2.4

mW

mW/°C

Thermal Resistance, Junction to Ambient R

θJA

417 °C/W

Junction and Storage Temperature TJ, T

stg

–55 to +150 °C

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) V

(BR)CEO

–45 — — Vdc

Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0) V

(BR)CES

–60 — — Vdc

Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V

(BR)EBO

–5.0 — — Vdc

Collector Cutoff Current

(VCE= –45 Vdc, IE = 0)
(VCE= –45 Vdc, IB = 0, TA = 150°C)

I

CES

—
—

—
—

–20
–10

nAdc
µAdc

Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) I

EBO

— — –20 nAdc

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

Thermal Clad is a trademark of the Bergquist Company

Order this document

by BCW68GLT1/D



SEMICONDUCTOR TECHNICAL DATA



1

2

3

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

 Motorola, Inc. 1996

COLLECTOR

3

1

BASE

2

EMITTER

BCW68GLT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Typ Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
(IC = –300 mAdc, VCE = –1.0 Vdc)

h

FE

120
160

60

—
—
—

400

—
—

—

Collector–Emitter Saturation Voltage (IC = –300 mAdc, IB = –30 mAdc) V

CE(sat)

— — –1.5 Vdc

Base–Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) V

BE(sat)

— — –2.0 Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz)

f

T

100 — — MHz

Output Capacitance

(VCB= –10 Vdc, IE = 0, f = 1.0 MHz)

C

obo

— — 18 pF

Input Capacitance

(VEB= –0.5 Vdc, IC = 0, f = 1.0 MHz)

C

ibo

— — 105 pF

Noise Figure

(IC= –0.2 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz,
BW = 200 Hz)

N

F

— — 10 dB