BCW65ALT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
h
FE
35
75
100
35
—
—
—
—
—
220
250
—
—
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
V
CE(sat)
—
—
0.7
0.3
—
—
Vdc
Base–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
V
BE(sat)
— — 2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
f
T
100 — — MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
obo
— — 12 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
C
ibo
— — 80 pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
NF — — 10 dB
SWITCHING CHARACTERISTICS
Turn–On Time
(IB1 = IB2 = 15 mAdc)
t
on
— — 100 ns
Turn–Off Time
(IC = 150 mAdc, RL = 150 Ω)
t
off
— — 400 ns