Motorola BCW33LT1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
20 Vdc
Collector–Base Voltage V
CBO
30 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
TA = 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature TJ, T
stg
–55 to +150 °C
DEVICE MARKING
BCW33LT1 = D3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V
(BR)CEO
32 — Vdc
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V
(BR)CBO
32 — Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V
(BR)EBO
5.0 — Vdc
Collector Cutoff Current
(VCB = 32 Vdc, IE = 0)
(VCB = 32 Vdc, IE = 0, TA = 100°C)
I
CBO
—
—
100
10
nAdc
µAdc
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BCW33LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
BCW33LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
hFE
420 800
—
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
V
CE(sat)
— 0.25
Vdc
Base–Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
V
BE(on)
0.55 0.70
Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
obo
— 4.0 pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
NF — 10 dB
Figure 1. Turn–On Time Figure 2. Turn–Off Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
CS < 4.0 pF*
10 k
+3.0 V
275
CS < 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2%
+10.9 V
–0.5 V
<1.0 ns
10 < t1 < 500 µs
DUTY CYCLE = 2%
+10.9 V
0
–9.1 V
<1.0 ns
t
1
BCW33LT1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
20
3.0
Figure 4. Noise Current
f, FREQUENCY (Hz)
2.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
BANDWIDTH = 1.0 Hz
RS = 0
IC = 1.0 mA
100 µA
e
n
, NOISE VOLTAGE (nV)
I
n
, NOISE CURRENT (pA)
30 µA
BANDWIDTH = 1.0 Hz
RS
≈ ∞
10 µA
300 µA
IC = 1.0 mA
300 µA
100 µA
30 µA
10 µA
10 20 50 100 200 500 1 k 2 k 5 k 10 k
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 5. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (µA)
500 k
Figure 6. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (µA)
10
2.0 dB
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESISTANCE (OHMS)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 7. Wideband
IC, COLLECTOR CURRENT (µA)
10
10 Hz to 15.7 kHz
R
S
, SOURCE RESISTANCE (OHMS)
Noise Figure is defined as:
NF+20 log
10
ǒ
e
n
2
)
4KTRS)
I
n
2
R
S
2
4KTR
S
Ǔ
1ń2
= Noise Voltage of the T ransistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10
–23
j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
e
n
I
n
K
T
R
S
3.0 dB
4.0 dB
6.0 dB
10 dB
50
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
20 30 50 70 100 200 300 500 700 1 k 10 20 30 50 70 100 200 300 500 700 1 k
500 k
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
1 M
500 k
50
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
20 30 50 70 100 200 300 500 700 1 k
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
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