Motorola BCP69T1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCP69T1/D
This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current
applications. The device is housed in the SOT-223 package, which is designed for
medium power surface mount applications.
• High Current: IC = –1.0 Amp
• The SOT-223 Package can be soldered using wave or reflow.
Motorola Preferred Device
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
• SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die.
• Available in 12 mm Tape and Reel
Use BCP69T1 to order the 7 inch/1000 unit reel.
COLLECTOR 2,4
Use BCP69T3 to order the 13 inch/4000 unit reel.
• NPN Complement is BCP68
(T
MAXIMUM RATINGS
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current I
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Temperature Range TJ, T
= 25°C unless otherwise noted)
C
Rating
(1)
BASE
1
1
2
CASE 318E-04, STYLE 1
TO-261AA
EMITTER 3
Symbol Value Unit
CEO
CBO
EBO
C
P
D
stg
–25 Vdc
–20 Vdc
–5.0 Vdc
–1.0 Adc
1.5
12
–65 to 150 °C
4
3
Watts
mW/°C
DEVICE MARKING
CE
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction-to-Ambient (surface mounted) R
Lead T emperature for Soldering, 0.0625″ from case
Time in Solder Bath
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
θJA
T
L
83.3 °C/W
260
10
°C
Sec
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
BCP69T1
ELECTRICAL CHARACTERISTICS
Characteristics
(T
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = –100 µAdc, IE = 0) V
Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V
Collector-Base Cutoff Current (VCB = –25 Vdc, IE = 0) I
Emitter-Base Cutoff Current (VEB = –5.0 Vdc, IC = 0) I
ON CHARACTERISTICS
DC Current Gain
(IC = –5.0 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 Adc, VCE = –1.0 Vdc)
Collector-Emitter Saturation Voltage (IC = –1.0 Adc, IB = –100 mAdc) V
Base-Emitter On Voltage (IC = –1.0 Adc, VCE = –1.0 Vdc) V
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc)
TYPICAL ELECTRICAL CHARACTERISTICS
200
Symbol Min Typ Max Unit
(BR)CES
(BR)CEO
(BR)EBO
CE(sat)
300
CBO
EBO
h
FE
BE(on)
f
T
–25 — — Vdc
–20 — — Vdc
–5.0 — — Vdc
— — –10 µAdc
— — –10 µAdc
50
85
60
— — –0.5 Vdc
— — –1.0 Vdc
— 60 — MHz
—
—
—
—
375
—
—
100
70
50
, CURRENT GAIN
FE
h
20
–10 –100 –1000
VCE = –1.0 V
TJ = 25
°
C
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
–1.0
TJ = 25°C
V
–0.8
–0.6
–0.4
V, VOLTAGE (VOLTS)
–0.2
0
–1.0 –100 –1000–10
(BE)sat
V
(BE)on
V
(CE)sat
@ IC/IB = 10
@ VCE = –1.0 V
@ IC/IB = 10
IC, COLLECTOR CURRENT (mA)
Figure 3. Saturation and “ON” Voltages
200
100
VCE = –10 V
TJ = 25
°
70
50
30
T
–10 –100 –1000
f , CURRENT GAIN BANDWIDTH PRODUCT (MHz)
C
f = 30 MHz
IC, COLLECTOR CURRENT (mA)
Figure 2. Current Gain Bandwidth Product
160
TJ = 25°C
120
80
C
ib
C, CAPACITANCE (pF)
40
Cob
0
C
ob
C
ib
–5.0
–1.0
–1.0
–2.0
VR, REVERSE VOLTAGE (VOLTS)
–1.5
–3.0
–2.0
–4.0
Figure 4. Capacitances
–2.5
–5.0
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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