Motorola BAV70WT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by BAV70WT1/D
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
A4
ELECTRICAL CHARACTERISTICS (T
Characteristic
A
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
= 100 µAdc)
(BR)
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 50 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100 Ω, I
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns) (Figure 2)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
R(REC)
R
F
FM(surge)
P
D
R
q
JA
P
D
R
q
JA
stg
= 25°C unless otherwise noted)
= 1.0 mAdc) (Figure 1)
3
CATHODE
70 Vdc
200 mAdc
500 mAdc
200
1.6
0.625 °C/W
300
2.4
417 °C/W
–55 to +150 °C
ANODE
1
2
mW
mW/°C
mW
mW/°C
Symbol Min Max Unit
V
(BR)
I
R1
I
R2
C
D
V
F
t
rr
V
RF
Motorola Preferred Device
3
1
2
CASE 419–02, STYLE 5
SC–70/SOT–323
70 — Vdc
—
—
— 1.5 pF
—
—
—
—
— 6.0 ns
— 1.75 V
5.0
100
715
855
1000
1250
µAdc
nAdc
mVdc
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
BAV70WT1
RS = 50
Ω
BAV70
SAMPLING
I
F
OSCILLOSCOPE
RL = 50
Ω
t
r
10%
V
R
90%
t
p
INPUT PULSE
I
+I
F
t
rr
OUTPUT PULSE
V
100
R
W
10% OF
Figure 1. Recovery Time Equivalent Test Circuit
1 K
RS = 50
Ω
Ω
BAV70
450
Ω
SAMPLING
OSCILLOSCOPE
RL = 50
Ω
I
V
90%
V
FR
10%
t
t
r
2
t
p
INPUT PULSE
Figure 2.
OUTPUT PULSE
t
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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