Motorola BAT54SLT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAT54SLT1/D
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
1
ANODE
CATHODE/ANODE
MAXIMUM RATINGS
Reverse Voltage V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Forward Current (DC) I
Junction Temperature T
Storage Temperature Range T
(TJ = 125°C unless otherwise noted)
Rating Symbol Value Unit
R
P
F
F
J
stg
DEVICE MARKING
BAT54S = LD3
ELECTRICAL CHARACTERISTICS (T
Characteristic
Reverse Breakdown Voltage (IR = 10 µA) V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C
Reverse Leakage (VR = 25 V) I
Forward Voltage (IF = 0.1 mAdc) V
Forward Voltage (IF = 30 mAdc) V
Forward Voltage (IF = 100 mAdc) V
Reverse Recovery Time
(IF = IR = 10 mAdc, I
Forward Voltage (IF = 1.0 mAdc) V
Forward Voltage (IF = 10 mAdc) V
Forward Current (DC) I
Repetitive Peak Forward Current I
Non–Repetitive Peak Forward Current (t < 1.0 s) I
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company .
REV 4
= 1.0 mAdc) Figure 1
R(REC)
= 25°C unless otherwise noted) (EACH DIODE)
A
3
Symbol Min Typ Max Unit
(BR)R
FRM
FSM
CATHODE
T
R
F
F
F
t
rr
F
F
F
2
Motorola Preferred Device
30 VOLTS
DUAL HOT–CARRIER
DETECTOR AND SWITCHING
CASE 318–08, STYLE 11
30 Volts
225
1.8
200 Max mA
125 Max °C
–55 to +150 °C
30 — — Volts
— 7.6 10 pF
— 0.5 2.0 µAdc
— 0.22 0.24 Vdc
— 0.41 0.5 Vdc
— 0.52 1.0 Vdc
— — 5.0 ns
— 0.29 0.32 Vdc
— 0.35 0.40 Vdc
— — 200 mAdc
— — 300 mAdc
— — 600 mAdc
DIODES
3
1
2
SOT–23 (TO–236AB)
mW
mW/°C
Motorola, Inc. 1997
5–1Motorola Small–Signal Transistors, FETs and Diodes Device Data
BAT54SLT1
820
Ω
+10 V
0.1 µF
2 k
100
0.1
µ
I
F
µ
H
F
t
t
r
p
10%
t
I
F
t
rr
t
Ω
50
PULSE
GENERATOR
100
10
125°C
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.0 0.1
OUTPUT
150°C
DUT
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t
rr
V
R(peak)
R
90%
INPUT SIGNAL
is equal to 10 mA.
I
R
OUTPUT PULSE
(IF = IR = 10 mA; measured
at i
R(REC)
Figure 1. Recovery Time Equivalent Test Circuit
1000
TA = 150°C
A)
100
µ
10
1.0
0.1
, REVERSE CURRENT (
85°C
25°C
0.2 0.3 0.4
VF, FORWARD VOLTAGE (VOLTS)
–40°C
–55°C
0.5
0.6
R
I
0.001
0.01
0
5101520
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward V oltage Figure 3. Leakage Current
i
R(REC)
= 1 mA)
TA = 125°C
TA = 25°C
25
= 1 mA
TA = 85°C
30
5–2
14
12
10
8
6
4
, TOTAL CAP ACITANCE (pF)
T
C
2
0
0
51015 30
VR, REVERSE VOLTAGE (VOLTS)
2520
Figure 4. T otal Capacitance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Loading...