SEMICONDUCTOR TECHNICAL DATA
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
Peak Forward Current I
Peak Forward Surge Current I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
BAS16LT1 = A6
R
F
FM(surge)
P
D
R
q
JA
P
D
R
q
JA
stg
3
CATHODE
75 Vdc
200 mAdc
500 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
ANODE
mW
mW/°C
mW
mW/°C
Order this document
by BAS16LT1/D
1
Motorola Preferred Device
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 Ω)
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
V
V
I
R
(BR)
V
F
C
D
FR
t
rr
Q
S
—
—
—
75 — Vdc
—
—
—
—
— 2.0 pF
— 1.75 Vdc
— 6.0 ns
— 45 pC
1.0
50
30
715
855
1000
1250
µAdc
mV
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
BAS16LT1
820
Ω
+10 V
0.1 µF
2.0 k
100
I
t
t
r
0.1
µ
I
F
µ
H
F
p
10%
t
F
t
rr
t
50 Ω OUTPUT
PULSE
GENERATOR
100
10
1.0
, FORWARD CURRENT (mA)
F
I
TA = 85°C
D.U.T.
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t
rr
V
R
R(peak)
90%
INPUT SIGNAL
is equal to 10 mA.
I
R
Figure 1. Recovery Time Equivalent Test Circuit
TA = 25°C
TA = –40°C
A)
µ
, REVERSE CURRENT (
I
R
10
1.0
0.1
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
i
= 1.0 mA
R(REC)
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
0.1
0.2 0.4
TA = 25°C
0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
0
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward V oltage Figure 3. Leakage Current
0.68
0.64
0.60
, DIODE CAPACITANCE (pF)
0.56
D
C
0.52
0
2468
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
50
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
BAS16LT1
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.037
0.95
0.035
0.9
SOT–23 POWER DISSIP ATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T
die, R
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
, the maximum rated junction temperature of the
J(max)
, the thermal resistance from the device junction to
θJA
PD =
T
PD =
150°C – 25°C
556°C/W
J(max)
R
θJA
– T
A
= 225 milliwatts
0.031
0.8
SOT–23
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.079
2.0
inches
mm
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BAS16LT1
P ACKAGE DIMENSIONS
A
L
3
S
1
B
2
GV
C
D
H
K
J
CASE 318–08
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
INCHES
DIMAMIN MAX MIN MAX
0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0180 0.0236 0.45 0.60
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.0984 2.10 2.50
V 0.0177 0.0236 0.45 0.60
STYLE 8:
PIN 1. ANODE
MILLIMETERS
2. NO CONNECTION
3. CATHODE
ISSUE AE
SOT–23 (TO–236AB)
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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Opportunity/Affirmative Action Employer.
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4
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
BAS16LT1/D
*BAS16LT1/D*
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