< Silicon RF Power MOS FET (Discrete) >
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
DESCRIPTION
RD70HVF1 is a MOS FET type transistor specifically
OUTLINE DRAWING
designed for VHF/UHF High power amplifiers
applications.
FEATURES
High power and High Gain:
Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
RoHS COMPLIANT
RD70HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
9.6+/-0.3
2
R1.6+/-0.15
4-C2
10.0+/-0.3
+0.05
0.1
-0.01
4.5+/-0.7
6.2+/-0.7
1
24.0+/-0.6
3
5.0+/-0.3
18.5+/-0.3
PIN
1.DRAIN
2.SOURCE
3.3+/-0.2
3.GATE
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
V
DSS
V
GSS
Pch Channel dissipation Tc=25
Pin Input power Zg=Zl=50
ID Drain current - 20
Tch Channel temperature - 175
Tstg Storage temperature - -40 to +175
Rth j-c Thermal resistance junction to case 1.0
Note 1: Above parameters are guaranteed independently.
Note 2: Over 300MHz use spec is 20W
Publication Date : Oct．2011
Drain to source voltage Vgs=0V 30 V
Gate to source voltage Vds=0V +/-20 V
°C
150 W
10(Note2)
°C
°C
°C/W
1
W
A
< Silicon RF Power MOS FET (Discrete) >
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS
I
DSS
I
GSS
V
Pout Output power f=175MHz ,VDD=12.5V 70 75 - W
D
Pout Output power f=520MHz ,VDD=12.5V 50 55 - W
D
Zerogate voltage drain current VDS=17V, VGS=0V - - 300 uA
Gate to source leak current VGS=10V, VDS=0V - - 5 uA
Gate threshold voltage VDS=12V, IDS=1mA 1.3 1.8 2.3 V
TH
Drain efficiency Pin=6W, Idq=2.0A 55 60 - %
Drain efficiency Pin=10W, Idq=2.0A 50 55 - %
Load VSWR tolerance VDD=15.2V,Po=70W(PinControl)
Load VSWR tolerance VDD=15.2V,Po=50W(PinControl)
(Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
MIN TYP MAX.
No destroy -
f=175MHz,Idq=2.0A,Zg=50
LoadVSWR=20:1(All phase)
f=520MHz,Idq=2.0A,Zg=50
Load VSWR=20:1(All phase)
No destroy -
Note : Above parameters , ratings , limits and conditions are subject to change.
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
160
140
120
100
80
Pch(W)
60
40
20
CHANNEL DISSIPATION
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
8
6
Vgs=3.7V
Vgs=3.4V
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
Ids(A)
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
350
300
Ta=+25°C
250
f=1MHz
200
Ids(A)
4
2
0
0 2 4 6 8 10
Vds(V)
Vds VS. Coss CHARACTERISTICS
300
Ta=+25°C
f=1MHz
250
200
150
Coss(pF)
100
50
0
0 5 10 15 20
Vds(V)
Vgs=3.1V
Vgs=2.8V
Vgs=2.5V
Vgs=2.2V
150
Ciss(pF)
100
50
0
0 5 10 15 20
Vds(V)
Vds VS. Crss CHARACTERISTICS
30
Ta=+25°C
f=1MHz
25
20
15
Crss(pF)
10
5
0
0 5 10 15 20
Vds(V)
Publication Date : Oct．2011
3
< Silicon RF Power MOS FET (Discrete) >
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
50
40
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=2A
Po
30
Gp
20
Po(dBm) , Gp(dB) , Idd(A)
10
0
10 20 30 40
Pin(dBm)
Pin-Po CHARACTERISTICS @f=520MHz
50
Ta=+25°C
40
f=520MHz
Vdd=12.5V
Idq=2A
Po
30
Ｉｄｄ
Pin-Po CHARACTERISTICS @f=175MHz
100
100
Po
80
80
η
ｄ
60
ηd(%)
40
20
0
60
40
Pout(W) , Idd(A)
20
Idd
0
ηd
Ta=25°C
f=175MHz
Vdd=12.5V
Idq=2A
100
80
60
40
20
0
ηd(%)
0 2 4 6 8 10
Pin(W)
Pin-Po CHARACTERISTICS @f=520MHz
100
70
Po
60
70
60
80
η
50
ｄ
60
40
50
ηd
40
20
Gp
10
Po(dBm) , Gp(dB) , Idd(A)
0
10 20 30 40
Pin(dBm)
Vdd-Po CHARACTERISTICS @f=175MHz
100
Ta=25°C
f=175MHz
80
Pin=6W
Idq=2A
Zg=ZI=50 ohm
60
Po(W)
40
20
0
4 6 8 10 12 14
Vdd(V)
Ｉｄｄ
40
20
0
ηd(%)
30
Pout(W) , Idd(A)
20
Idd
Ta=25°C
f=520MHz
Vdd=12.5V
Idq=2A
10
0
30
20
10
0
ηd(%)
0 5 10 15 20
Pin(W)
Vdd-Po CHARACTERISTICS @f=520MHz
20
Po
18
16
14
12
Idd
10
Idd(A)
8
6
4
70
60
50
Ta=25°C
f=520MHz
Pin=10W
Idq=2A
Zg=ZI=50 ohm
Po
40
Po(W)
30
20
12
10
8
Idd
6
Idd(A)
4
2
2
0
10
0
4 6 8 10 12 14
Vdd(V)
Publication Date : Oct．2011
4
< Silicon RF Power MOS FET (Discrete) >
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2
10
Vds=10V
Tc=-25~+75°C
8
6
Ids(A)
4
2
0
2 2.5 3 3.5 4
+75°C
TEST CIRCUIT(f=175MHz)
-25°C
Vgs(V)
C1
Vgg
9.1kOHM
+25°C
Vdd
L2
C3
8.2kOHM
56pF
RF-IN
56pF
0-20pF
165
C1:2200pF 10uF in parallel
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
L1:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2:4Turns,I.D6mm,D1.6mm P=2 silver plateted copper wire
100OHM
18pF
43
138.5
175MHz
RD70HVF1
35pF
10
21
Note:Board material PTFE substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
100pF
100pF
10
20.5
L1
37pF
41
72pF
150.5
8pF
C2
190
0-20pF
20pF
56pF
RF-OUT
0-20pF
Publication Date : Oct．2011
5
< Silicon RF Power MOS FET (Discrete) >
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TEST CIRCUIT(f=520MHz)
Vgg
Vdd
RF-IN
56pF
15pF
8.2kOHM
0-10pF5pF
100
C1
80
100OHM
5pF
45
70
L1
40
9.1kOHM
520MHz
RD70HVF1
22pF
12
15pF
15pF
15pF
15pF
8
L3
C3
C2
L2
RF-OUT
56pF
0-10pF
5pF
18
38
88
100
C1:2200pF 10uF in parallel
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2:2Turns,I.D6mm,D1.6mm P=2 silver plateted copper wire
L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
Note:Board material PTFE substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
Publication Date : Oct．2011
6
< Silicon RF Power MOS FET (Discrete) >
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zo=10Ω
f=135MHz Zout
f=175MHz Zout
f=175MHz Zin
f=135MHz Zin
Zin, Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
135 0.43-j3.19 0.70+j0.25 Po=90W, Vdd=12.5V,Pin=6W
175 0.55-j2.53 0.72-j0.36 Po=80W, Vdd=12.5V,Pin=6W
f=520MHz Zout
Zo=10Ω
f=520MHz Zin
f=440MHz Zout
f=440MHz Zin
Zin, Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
440 0.74-j0.34 0.71-j0.18 Po=60W, Vdd=12.5V,Pin=10W
520 1.04+j0.63 0.93+j1.62 Po=55W, Vdd=12.5V,Pin=10W
Publication Date : Oct．2011
7
< Silicon RF Power MOS FET (Discrete) >
RD70HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
50
0.885
-174.0
8.441
72.4
0.013
-16.2
0.745
-170.3
100
0.906
-176.8
3.713
55.3
0.011
-30.9
0.805
-170.5
150
0.930
-179.0
2.095
41.2
0.008
-39.5
0.860
-173.3
175
0.939
179.8
1.647
35.9
0.007
-44.3
0.874
-174.6
200
0.946
178.7
1.337
32.3
0.006
-46.6
0.897
-175.6
250
0.957
176.7
0.908
24.8
0.004
-46.5
0.933
-178.1
300
0.967
174.7
0.661
19.4
0.002
-40.8
0.935
179.4
350
0.969
173.0
0.495
13.6
0.001
-23.4
0.952
177.2
400
0.976
171.0
0.378
12.2
0.002
38.2
0.965
175.0
450
0.974
169.6
0.316
5.4
0.003
73.6
0.965
172.9
500
0.980
168.0
0.276
2.3
0.003
75.6
0.973
171.4
520
0.978
167.2
0.247
0.9
0.003
75.3
0.974
170.6
550
0.980
166.2
0.216
-0.2
0.004
69.2
0.975
169.5
600
0.980
164.6
0.176
-1.5
0.005
74.3
0.974
167.8
650
0.982
163.3
0.156
-1.4
0.007
79.3
0.979
166.3
700
0.985
162.0
0.126
-3.3
0.007
75.4
0.983
164.9
750
0.982
160.7
0.108
-2.0
0.007
76.7
0.982
163.6
800
0.982
159.4
0.106
-1.1
0.009
77.1
0.984
162.0
850
0.984
158.1
0.107
-9.0
0.009
72.6
0.989
160.9
900
0.983
157.0
0.078
-13.4
0.010
72.1
0.983
159.6
950
0.984
155.9
0.079
-4.5
0.011
74.4
0.987
158.2
1000
0.985
154.6
0.067
-5.3
0.011
72.7
0.993
157.3
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
S11 S21 S12 S22
Publication Date : Oct．2011
8
< Silicon RF Power MOS FET (Discrete) >
have
until cold after switch
his products without cause damage for human and
details
copies of the formal
(RF power transistors) are designed
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
predicted operating life time of
an authorized Mitsubishi
therefore
device is
It is
sink in conjunction with other cooling methods as needed (fan,
lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
the
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
, please refer the last page
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
for consumer mobile communication terminals and were not specifically designed for use in
under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.
8.
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
9
< Silicon RF Power MOS FET (Discrete) >
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
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•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
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•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
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•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
10
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