MITSUBISHI RD70HVF1 User Manual

< Silicon RF Power MOS FET (Discrete) >

RD70HVF1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W

DESCRIPTION

RD70HVF1 is a MOS FET type transistor specifically

OUTLINE DRAWING

designed for VHF/UHF High power amplifiers

applications.

FEATURES

High power and High Gain:

Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz

Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz

High Efficiency: 60%typ.on VHF Band

High Efficiency: 55%typ.on UHF Band

APPLICATION

For output stage of high power amplifiers in VHF/UHF

Band mobile radio sets.

RoHS COMPLIANT

RD70HVF1-101 is a RoHS compliant products.

RoHS compliance is indicate by the letter “G” after
the Lot Marking.

25.0+/-0.3

7.0+/-0.5 11.0+/-0.3

9.6+/-0.3

2

R1.6+/-0.15

4-C2

10.0+/-0.3

+0.05

0.1

-0.01

4.5+/-0.7

6.2+/-0.7

1

24.0+/-0.6

3

5.0+/-0.3

18.5+/-0.3

PIN

1.DRAIN

2.SOURCE

3.3+/-0.2

3.GATE

UNIT:mm

ABSOLUTE MAXIMUM RATINGS

(Tc=25°CUNLESS OTHERWISE NOTED)

SYMBOL PARAMETER CONDITIONS RATINGS UNIT

V

DSS

V

GSS

Pch Channel dissipation Tc=25

Pin Input power Zg=Zl=50

ID Drain current - 20

Tch Channel temperature - 175

Tstg Storage temperature - -40 to +175

Rth j-c Thermal resistance junction to case 1.0

Note 1: Above parameters are guaranteed independently.

Note 2: Over 300MHz use spec is 20W

Publication Date : Oct．2011

Drain to source voltage Vgs=0V 30 V

Gate to source voltage Vds=0V +/-20 V

°C



150 W

10(Note2)

°C

°C

°C/W

1

W

A

< Silicon RF Power MOS FET (Discrete) >

RD70HVF1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS

I

DSS

I

GSS

V

Pout Output power f=175MHz ,VDD=12.5V 70 75 - W

D

Pout Output power f=520MHz ,VDD=12.5V 50 55 - W

D

Zerogate voltage drain current VDS=17V, VGS=0V - - 300 uA

Gate to source leak current VGS=10V, VDS=0V - - 5 uA

Gate threshold voltage VDS=12V, IDS=1mA 1.3 1.8 2.3 V

TH

Drain efficiency Pin=6W, Idq=2.0A 55 60 - %

Drain efficiency Pin=10W, Idq=2.0A 50 55 - %

Load VSWR tolerance VDD=15.2V,Po=70W(PinControl)

Load VSWR tolerance VDD=15.2V,Po=50W(PinControl)

(Tc=25°C, UNLESS OTHERWISE NOTED)

LIMITS UNIT

MIN TYP MAX.

No destroy -

f=175MHz,Idq=2.0A,Zg=50

LoadVSWR=20:1(All phase)

f=520MHz,Idq=2.0A,Zg=50

Load VSWR=20:1(All phase)



No destroy -



Note : Above parameters , ratings , limits and conditions are subject to change.

Publication Date : Oct．2011

2

< Silicon RF Power MOS FET (Discrete) >

RD70HVF1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W

TYPICAL CHARACTERISTICS

CHANNNEL DISSIPATION VS.

AMBIENT TEMPERATURE

160

140

120

100

80

Pch(W)

60

40

20

CHANNEL DISSIPATION

0

0 40 80 120 160 200

AMBIENT TEMPERATURE Ta(°C)

Vds-Ids CHARACTERISTICS

10

Ta=+25°C

8

6

Vgs=3.7V

Vgs=3.4V

Vgs-Ids CHARACTERISTICS

10

Ta=+25°C
Vds=10V

8

6

Ids(A)

4

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Vgs(V)

Vds VS. Ciss CHARACTERISTICS

350

300

Ta=+25°C

250

f=1MHz

200

Ids(A)

4

2

0

0 2 4 6 8 10

Vds(V)

Vds VS. Coss CHARACTERISTICS

300

Ta=+25°C
f=1MHz

250

200

150

Coss(pF)

100

50

0

0 5 10 15 20

Vds(V)

Vgs=3.1V

Vgs=2.8V

Vgs=2.5V

Vgs=2.2V

150

Ciss(pF)

100

50

0

0 5 10 15 20

Vds(V)

Vds VS. Crss CHARACTERISTICS

30

Ta=+25°C
f=1MHz

25

20

15

Crss(pF)

10

5

0

0 5 10 15 20

Vds(V)

Publication Date : Oct．2011

3