MITSUBISHI RD70HHF1 User Manual
< Silicon RF Power MOS FET (Discrete) >
RD70HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W
DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
RoHS COMPLIANT
RD70HHF1-101 is a RoHS compliant products.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
24.0+/-0.6
3
5.0+/-0.3
18.5+/-0.3
9.6+/-0.3
2
R1.6+/-0.15
4-C2
3.3+/-0.2
10.0+/-0.3
+0.05
0.1
-0.01
4.5+/-0.7
6.2+/-0.7
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
V
DSS
V
GSS
Pch Channel dissipation Tc=25
Pin Input power Zg=Zl=50
ID Drain current - 20
Tch Channel Temperature - 175
Tstg Storage temperature - -40 to +175
Rth j-c Thermal resistance junction to case 1.0
Note 1: Above parameters are guaranteed independently.
Drain to source voltage Vgs=0V 50 V
Gate to source voltage Vds=0V +/-20 V
°C
150 W
5
°C
°C
°C/W
W
A
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD70HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS LIMITS UNIT
I
DSS
I
GSS
V
Pout Output power f=30MHz ,VDD=12.5V 70 80 - W
D
Note : Above parameters , ratings , limits and conditions are subject to change.
Drain cutoff current VDS=17V, VGS=0V - - 10 uA
Gate cutoff current VGS=10V, VDS=0V - - 1 uA
Gate threshold voltage VDS=12V, IDS=1mA 1.5 - 4.5 V
TH
Drain efficiency Pin=3.5W,Idq=1.0A 55 60 - %
Load VSWR tolerance VDD=15.2V,Po=70W(Pin Control)
(Tc=25deg.C , UNLESS OTHERWISE NOTED)
MIN TYP MAX.
No destroy -
f=30MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
Ciss(pF)
RD70HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
200
...
AMBIENT TEMPERATURE
160
120
80
40
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
8
6
Ids(A)
4
2
0
0 2 4 6 8 10
Vds(V)
Vgs=6V
Vgs=5.7V
Vgs=5.4V
Vgs=5.1V
Vgs=4.8V
Vgs=4.5V
Vgs=4.2V
Vgs -Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
Ids(A)
4
2
0
0 1 2 3 4 5 6 7
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
300
Ta=+25°C
f=1MHz
250
200
150
100
50
0
0 10 20 30
Vds( V)
Publication Date : Oct．2011
Vds VS. Cos s CHARACTERISTICS
500
Ta=+25°C
f=1MHz
400
300
200
Coss(pF)
100
0
0 10 20 30
Vds(V)
Vds VS. Crs s CHARACTERISTICS
40
Ta=+25°C
f=1MHz
30
20
Crss (pF)
10
0
0 10 20 30
Vds( V)
3
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