MITSUBISHI RD70HHF1 User Manual

< Silicon RF Power MOS FET (Discrete) >

RD70HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W

DESCRIPTION

RD70HHF1 is a MOS FET type transistor specifically

designed for HF High power amplifiers applications.

FEATURES

High power and High Gain:

Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz

High Efficiency: 60%typ.on HF Band

APPLICATION

For output stage of high power amplifiers in HF

Band mobile radio sets.

RoHS COMPLIANT

RD70HHF1-101 is a RoHS compliant products.

OUTLINE DRAWING

25.0+/-0.3

7.0+/-0.5 11.0+/-0.3

1

24.0+/-0.6

3

5.0+/-0.3

18.5+/-0.3

9.6+/-0.3

2

R1.6+/-0.15

4-C2

3.3+/-0.2

10.0+/-0.3

+0.05

0.1

-0.01

4.5+/-0.7

6.2+/-0.7

PIN

1.DRAIN

2.SOURCE

3.GATE

UNIT:mm

RoHS compliance is indicate by the letter “G” after
the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

(Tc=25°CUNLESS OTHERWISE NOTED)

SYMBOL PARAMETER CONDITIONS RATINGS UNIT

V

DSS

V

GSS

Pch Channel dissipation Tc=25

Pin Input power Zg=Zl=50

ID Drain current - 20

Tch Channel Temperature - 175

Tstg Storage temperature - -40 to +175

Rth j-c Thermal resistance junction to case 1.0

Note 1: Above parameters are guaranteed independently.

Drain to source voltage Vgs=0V 50 V

Gate to source voltage Vds=0V +/-20 V

°C



150 W

5

°C

°C

°C/W

W

A

Publication Date : Oct．2011

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< Silicon RF Power MOS FET (Discrete) >

RD70HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS LIMITS UNIT

I

DSS

I

GSS

V

Pout Output power f=30MHz ,VDD=12.5V 70 80 - W

D

Note : Above parameters , ratings , limits and conditions are subject to change.

Drain cutoff current VDS=17V, VGS=0V - - 10 uA

Gate cutoff current VGS=10V, VDS=0V - - 1 uA

Gate threshold voltage VDS=12V, IDS=1mA 1.5 - 4.5 V

TH

Drain efficiency Pin=3.5W,Idq=1.0A 55 60 - %

Load VSWR tolerance VDD=15.2V,Po=70W(Pin Control)

(Tc=25deg.C , UNLESS OTHERWISE NOTED)

MIN TYP MAX.

No destroy -

f=30MHz,Idq=1.0A,Zg=50

Load VSWR=20:1(All Phase)



Publication Date : Oct．2011

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< Silicon RF Power MOS FET (Discrete) >

CHANNEL DISSIPATION Pch(W)

Ciss(pF)

RD70HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W

TYPICAL CHARACTERISTICS

CHANNEL DISSIPATION VS.

200

...

AMBIENT TEMPERATURE

160

120

80

40

0

0 40 80 120 160 200

AMBIENT TEMPERATURE Ta(°C)

Vds-Ids CHARACTERISTICS

10

Ta=+25°C

8

6

Ids(A)

4

2

0

0 2 4 6 8 10

Vds(V)

Vgs=6V

Vgs=5.7V

Vgs=5.4V

Vgs=5.1V

Vgs=4.8V

Vgs=4.5V
Vgs=4.2V

Vgs -Ids CHARACTERISTICS

10

Ta=+25°C
Vds=10V

8

6

Ids(A)

4

2

0

0 1 2 3 4 5 6 7

Vgs(V)

Vds VS. Ciss CHARACTERISTICS

300

Ta=+25°C
f=1MHz

250

200

150

100

50

0

0 10 20 30

Vds( V)

Publication Date : Oct．2011

Vds VS. Cos s CHARACTERISTICS

500

Ta=+25°C
f=1MHz

400

300

200

Coss(pF)

100

0

0 10 20 30

Vds(V)

Vds VS. Crs s CHARACTERISTICS

40

Ta=+25°C
f=1MHz

30

20

Crss (pF)

10

0

0 10 20 30

Vds( V)

3

< Silicon RF Power MOS FET (Discrete) >

RD70HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W

TYPICAL CHARACTERISTICS

Po(dBm) , Gp(dB) ,

Po(W)

Pin-Po CHARACTERISTICS

Ta=+25°C

50

f=30MHz
Vdd=12.5V
Idq=1A

40

Gp

30

Idd(A)

20

10

0

0 10 20 30

Pin(dBm)

Vdd-Po CHARACTERISTICS

120

Ta=25°C

100

f=30MHz
Pin=3.5W
Idq=1A

80

Zg=ZI=50 ohm

60

40

20

Pin-Po CHARACTERISTICS

Po

100

80

ηｄ

60

d(%)

η

40

100

80

60

40

Pout(W) , Idd(A)

Ｉｄｄ

20

0

20

0

Po

Ta=25°C
f=30MHz
Vdd=12.5V

Idd

Idq=1A

100

80

ηd

60

d(%)

η

40

20

0

0 1 2 3 4

Pin(W)

Vgs-Ids CHARACTORISTICS 2

30

Po

25

20

Idd

15

Idd(A)

10

5

10

Vds=10V
Tc=-25~+75°C

8

6

Ids(A)

4

+75°C

2

+25°C

-25°C

0

2 4 6 8 10 12 14

Vdd(V)

Vgs-gm CHARACTORISTICS

6

Vds=10V

5

Tc=-25~+75°C

4

3

m(S)

g

2

1

+75°C

+25°C

0

0 1 2 3 4 5 6

Vgs(V)

-25°C

0

0

0 1 2 3 4 5 6 7

Vgs(V)

Publication Date : Oct．2011

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< Silicon RF Power MOS FET (Discrete) >

RD70HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W

TEST CIRCUIT(f=30MHz)

220pF

C2

RF-IN

220pF

C1:100pF, 0.022uF, 0.1uF in parallel
C2:470pF*2 in parallel

L3

93

100

89

C1

C1

1 OHM

78

Vgg

25

10K OHM

330 OHM

16

180pF

180pF

200pF

4.5

L2

L1

200pF

16

20

Vdd

23

26

C1

68pF*3

43

330uF,50V

33uF,50V

C1

68pF*3

58

61

66

92

330pF

L4

100

330pF

14

33pF

47pF

RF-OUT

1000pF

47pF

33pF

12

8

L1:8Turns,I.D8mm,D1.6mm silver plateted copper wire

L2:10Turns,I.D8mm,D1.6mm silver plateted copper wire

L3:5Turns,I.D6mm,D0.7mm copper wire P=0.5mm
L4:1Turn,I.D10mm,D1.6mm silver plateted copper wire

Publication Date : Oct．2011

Dimensions:mm
Note:Board material PTFE substrate

micro strip line width=4.2mm / 50 OHM,er:2.7,t=1.6mm

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< Silicon RF Power MOS FET (Discrete) >



RD70HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W

INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS

Zo=10

f=30MHz Zout

f=30MHz Zin

Zin , Zout

f Zin Zout

(MHz) (ohm) (ohm) Conditions

30 5.28-j20.08 0.77-j0.22 Po=97W, Vdd=12.5V,Pin=3.5W

Publication Date : Oct．2011

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< Silicon RF Power MOS FET (Discrete) >

RD70HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA)

Freq.

[MHz]

(mag)

(ang)

(mag)

(ang)

(mag)

(ang)

(mag)

(ang)

10

0.837

-155.8

39.860

97.0

0.013

2.0

0.776

-159.3

30

0.838

-170.6

13.625

82.2

0.012

-8.7

0.770

-171.5

50

0.842

-173.0

8.074

75.1

0.012

-7.4

0.784

-171.7

100

0.872

-174.1

3.731

60.3

0.010

-24.2

0.824

-171.3

150

0.899

-174.9

2.183

47.0

0.009

-41.5

0.864

-173.2

200

0.917

-175.9

1.408

38.4

0.007

-39.3

0.893

-173.6

250

0.931

-176.8

1.010

31.6

0.006

-23.3

0.931

-175.3

300

0.941

-177.7

0.734

25.1

0.005

-46.3

0.931

-176.5

350

0.950

-178.6

0.570

21.5

0.004

-17.5

0.944

-177.5

400

0.953

-179.4

0.455

17.2

0.003

29.2

0.964

-178.6

450

0.957

179.9

0.361

13.3

0.003

-4.5

0.952

-179.5

500

0.960

179.1

0.302

11.1

0.001

105.8

0.959

179.4

550

0.967

178.4

0.254

7.3

0.004

65.8

0.966

178.4

600

0.967

177.7

0.211

7.4

0.003

96.5

0.962

178.0

650

0.971

177.3

0.185

5.8

0.006

71.6

0.973

177.0

700

0.969

176.5

0.162

0.5

0.005

96.8

0.969

176.0

750

0.970

175.6

0.160

2.7

0.005

72.1

0.965

175.7

800

0.969

175.1

0.132

1.8

0.007

81.0

0.976

174.6

850

0.974

174.8

0.122

-4.3

0.007

73.6

0.970

174.4

900

0.973

174.0

0.117

-5.2

0.009

87.1

0.970

174.0

950

0.971

173.1

0.100

0.0

0.011

77.5

0.972

172.7

1000

0.976

172.5

0.087

-0.5

0.011

73.8

0.972

172.6

RD70HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W

S11 S21 S12 S22

Publication Date : Oct．2011

7

< Silicon RF Power MOS FET (Discrete) >

have

until cold after switch

his products without cause damage for human and

details

copies of the formal

(RF power transistors) are designed

other applications.

In particular, while these products are highly reliable for their designed purpose, they are not manufactured

quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed

In the application, which is base station applications and

off frequency

during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain

predicted operating life time of

an authorized Mitsubishi

therefore

device is

It is

sink in conjunction with other cooling methods as needed (fan,

lower than 120deg/C(in case of

6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the

exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to

extreme short current flow between the drain and the source of the device. These results causes in fire or

the

Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in

, please refer the last page

RD70HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W

ATTENTION:

1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.

2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.

3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.

PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:

1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.

2.RA series products (RF power amplifier modules) and RD series products

for consumer mobile communication terminals and were not specifically designed for use in

under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-

period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.

3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.

4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.

5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heat­etc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.

injury.

7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.

8.
any way from it’s original form.

9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.

10. Please refer to the additional precautions in the formal specification sheet.

Publication Date : Oct．2011

8

< Silicon RF Power MOS FET (Discrete) >

RD70HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.

•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).

•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.

•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.

© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : Oct．2011

9