MITSUBISHI RD60HUF1 User Manual
< Silicon RF Power MOS FET (Discrete) >
RD60HUF1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
DESCRIPTION
RD60HUF1 is a MOS FET type transistor specifically
designed for UHF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz
High Efficiency: 55%typ.on UHF Band
APPLICATION
For output stage of high power amplifiers in UHF
Band mobile radio sets.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
24.0+/-0.6
3
5.0+/-0.3
18.5+/-0.3
9.6+/-0.3
2
R1.6+/-0.15
4-C2
3.3+/-0.2
10.0+/-0.3
+0.05
0.1
-0.01
4.5+/-0.7
6.2+/-0.7
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
RoHS COMPLIANT
RD60HUF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
V
DSS
V
GSS
Pch Channel dissipation Tc=25
Pin Input power Zg=Zl=50
ID Drain current - 20
Tch Channel temperature - 175
Tstg Storage temperature - -40 to +175
Rth j-c Thermal resistance junction to case 1.0
Drain to source voltage Vgs=0V 30 V
Gate to source voltage Vds=0V +/-20 V
°C
150 W
20
°C
°C
°C/W
W
A
Note 1: Above parameters are guaranteed independently.
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD60HUF1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS LIMITS UNIT
I
DSS
I
GSS
V
Pout Output power f=520MHz ,VDD=12.5V 60 65 - W
D
Note : Above parameters , ratings , limits and conditions are subject to change.
Zerogate voltage drain current VDS=17V, VGS=0V - - 400 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Gate threshold voltage VDS=12V, IDS=1mA 1.1 1.45 1.8 V
TH
Drain efficiency Pin=10W, Idq=2.5A 50 55 - %
Load VSWR tolerance VDD=15.2V,Po=60W(PinControl)
(Tc=25°C, UNLESS OTHERWISE NOTED)
MIN TYP MAX.
No destroy -
f=520MHz,Idq=2.5A,Zg=50
Load VSWR=20:1(All Phase)
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
Crss (pF)
Coss(pF)
Ciss(pF)
RD60HUF1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
180
160
...
140
120
100
10
8
6
Ids(A)
4
2
0
AMBIENT TEMPERATURE
80
60
40
20
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
Ta=+25°C
0 2 4 6 8 10
Vds(V)
Vgs=3.1V
Vgs=2.8V
Vgs=2.5V
Vgs=2.2V
Vgs -Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
Ids(A)
4
2
0
0 1 2 3 4
Vds VS. Ciss CHARACTERISTICS
400
350
300
250
Ta=+25°C
200
f=1MHz
150
100
50
0
0 5 10 15 20
Vgs(V)
Vds( V)
Publication Date : Oct．2011
Vds VS. Cos s CHARACTERISTICS
350
Ta=+25°C
300
f=1MHz
250
200
150
100
50
0
0 5 10 15 20
Vds(V)
Vds VS. Crs s CHARACTERISTICS
50
Ta=+25°C
f=1MHz
40
30
20
10
0
0 5 10 15 20
Vds( V)
3
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