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< Silicon RF Power MOS FET (Discrete) >
RD60HUF1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
DESCRIPTION
RD60HUF1 is a MOS FET type transistor specifically
designed for UHF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz
High Efficiency: 55%typ.on UHF Band
APPLICATION
For output stage of high power amplifiers in UHF
Band mobile radio sets.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
24.0+/-0.6
3
5.0+/-0.3
18.5+/-0.3
9.6+/-0.3
2
R1.6+/-0.15
4-C2
3.3+/-0.2
10.0+/-0.3
+0.05
0.1
-0.01
4.5+/-0.7
6.2+/-0.7
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
RoHS COMPLIANT
RD60HUF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
V
DSS
V
GSS
Pch Channel dissipation Tc=25
Pin Input power Zg=Zl=50
ID Drain current - 20
Tch Channel temperature - 175
Tstg Storage temperature - -40 to +175
Rth j-c Thermal resistance junction to case 1.0
Drain to source voltage Vgs=0V 30 V
Gate to source voltage Vds=0V +/-20 V
°C
150 W
20
°C
°C
°C/W
W
A
Note 1: Above parameters are guaranteed independently.
Publication Date : Oct．2011
1
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< Silicon RF Power MOS FET (Discrete) >
RD60HUF1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS LIMITS UNIT
I
DSS
I
GSS
V
Pout Output power f=520MHz ,VDD=12.5V 60 65 - W
D
Note : Above parameters , ratings , limits and conditions are subject to change.
Zerogate voltage drain current VDS=17V, VGS=0V - - 400 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Gate threshold voltage VDS=12V, IDS=1mA 1.1 1.45 1.8 V
TH
Drain efficiency Pin=10W, Idq=2.5A 50 55 - %
Load VSWR tolerance VDD=15.2V,Po=60W(PinControl)
(Tc=25°C, UNLESS OTHERWISE NOTED)
MIN TYP MAX.
No destroy -
f=520MHz,Idq=2.5A,Zg=50
Load VSWR=20:1(All Phase)
Publication Date : Oct．2011
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< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
Crss (pF)
Coss(pF)
Ciss(pF)
RD60HUF1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
180
160
...
140
120
100
10
8
6
Ids(A)
4
2
0
AMBIENT TEMPERATURE
80
60
40
20
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
Ta=+25°C
0 2 4 6 8 10
Vds(V)
Vgs=3.1V
Vgs=2.8V
Vgs=2.5V
Vgs=2.2V
Vgs -Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
Ids(A)
4
2
0
0 1 2 3 4
Vds VS. Ciss CHARACTERISTICS
400
350
300
250
Ta=+25°C
200
f=1MHz
150
100
50
0
0 5 10 15 20
Vgs(V)
Vds( V)
Publication Date : Oct．2011
Vds VS. Cos s CHARACTERISTICS
350
Ta=+25°C
300
f=1MHz
250
200
150
100
50
0
0 5 10 15 20
Vds(V)
Vds VS. Crs s CHARACTERISTICS
50
Ta=+25°C
f=1MHz
40
30
20
10
0
0 5 10 15 20
Vds( V)
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< Silicon RF Power MOS FET (Discrete) >
Vds=10V
RD60HUF1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
Ta=+25°C
50
40
f=520MHz
Vdd=12.5V
Idq=2.5A
Po
30
20
Po(dBm) , Gp(dB) , Idd(A)
10
0
Gp
Ｉｄｄ
10 20 30 40
Pin(dBm)
Vdd-Po CHARACTERISTICS
90
Ta=25°C
80
f=520MHz
Pin=10W
70
Idq=2.5A
Zg=ZI=50 ohm
60
50
40
Po(W)
30
20
10
0
4 6 8 10 12 14
Vdd(V )
Pin-Po CHARACTERISTICS
100
100
Po
80
100
80
80
η
ｄ
60
ηd
60
60
40
20
0
ηd(%)
40
Pout(W) , Idd(A)
20
Idd
Ta=25°C
f=520MHz
Vdd=12.5V
Idq=2.5A
0
40
20
0
ηd(%)
0 5 10 15 20
Pin(W)
Vgs -Ids CHARACTERISTICS 2
18
Po
16
14
12
Idd
10
8
Idd(A)
10
Tc=-25~+75°C
8
6
Ids(A)
4
+25°C
6
4
2
0
+75°C
2
-25°C
0
2 3 4
Vgs(V)
Publication Date : Oct．2011
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< Silicon RF Power MOS FET (Discrete) >
RD60HUF1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
TEST CIRCUIT(f=520MHz)
RF-in
56pF
8.2kOHM
C1
90
L1
Vgg
9.1kOHM
100OHM
12
15pF
520MHz
RD60HUF1
24pF
4
10
18pF
18pF
Vdd
L3
C2
L2
15pF
6
8
90
C3
RF-OUT
56pF
12
8
14
100
C1:2200pF 10uf in parallel
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
Note:Board material PTFE substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
100
Publication Date : Oct．2011
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< Silicon RF Power MOS FET (Discrete) >
RD60HUF1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=520MHz Zout
f=520MHz Zin
f=440MHz Zout
f=300MHz Zout
f=300MHz Zin
f=440MHz Zin
Zo=10
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
300 1.16-j0.06 0.83+j0.14
440 1.18+j0.09 1.20+j0.58
520 1.15+j0.86 1.05+j1.09
Po=70W, Vdd=12.5V,Pin=10W
Po=65W, Vdd=12.5V,Pin=10W
Po=60W, Vdd=12.5V,Pin=10W
Publication Date : Oct．2011
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< Silicon RF Power MOS FET (Discrete) >
RD60HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
10
0.909
-156.8
30.933
98.0
0.012
8.6
0.788
-166.6
50
0.910
-177.1
6.014
75.6
0.011
-10.8
0.811
-177.2
100
0.923
178.6
2.796
60.1
0.010
-25.0
0.845
-178.5
150
0.935
175.5
1.678
46.1
0.008
-32.2
0.869
178.3
175
0.944
173.9
1.351
40.5
0.008
-39.0
0.877
177.0
200
0.949
172.5
1.109
36.2
0.007
-41.7
0.893
175.6
250
0.957
169.2
0.804
27.2
0.005
-42.3
0.930
172.3
300
0.961
166.2
0.583
18.3
0.004
-40.2
0.930
169.2
350
0.964
163.3
0.450
12.0
0.003
-21.8
0.945
166.0
400
0.969
159.8
0.368
6.8
0.002
-4.8
0.957
162.4
450
0.974
157.0
0.296
2.3
0.002
38.1
0.956
159.5
500
0.975
153.8
0.238
-3.0
0.003
38.4
0.962
156.5
550
0.977
151.0
0.209
-6.1
0.003
49.4
0.965
153.4
600
0.978
147.8
0.178
-14.1
0.005
53.8
0.963
150.1
650
0.982
145.1
0.155
-17.5
0.006
54.4
0.971
147.4
700
0.983
141.9
0.136
-19.6
0.006
50.3
0.973
144.5
750
0.979
139.5
0.113
-17.5
0.007
51.8
0.972
141.5
800
0.982
136.7
0.104
-20.2
0.009
56.2
0.980
138.4
850
0.985
133.7
0.103
-33.7
0.009
49.6
0.978
136.2
900
0.980
130.9
0.084
-27.4
0.010
46.5
0.975
133.1
950
0.981
128.0
0.083
-35.1
0.010
47.2
0.983
130.4
1000
0.981
124.9
0.071
-28.7
0.012
43.8
0.984
128.0
RD60HUF1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
S11 S21 S12 S22
Publication Date : Oct．2011
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< Silicon RF Power MOS FET (Discrete) >
have
until cold after switch
his products without cause damage for human and
details
copies of the formal
(RF power transistors) are designed
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
predicted operating life time of
an authorized Mitsubishi
therefore
device is
It is
sink in conjunction with other cooling methods as needed (fan,
lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
the
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
, please refer the last page
RD60HUF1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
for consumer mobile communication terminals and were not specifically designed for use in
under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.
8.
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
8
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< Silicon RF Power MOS FET (Discrete) >
RD60HUF1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
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contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
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•If these products or technologies are subject to the Japanese export control restrictions, they must be exported
under a license from the Japanese government and cannot be imported into a country other than the approved
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
9
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