< Silicon RF Power MOS FET (Discrete) >
UNIT:mm
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
OUTLINE DRAWING
7.2+/-0.5
22.0+/-0.3
18.0+/-0.3
7.6+/-0.3
4-C1
FEATURES
High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.
RoHS COMPLIANT
RD30HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
2.8+/-0.3
1
6.6+/-0.3
2
14.0+/-0.4
R1.6
3
PIN
1.Drain
0.10
2.3+/-0.3
2.Source
3.Gate
5.1+/-0.5
3.0+/-0.4
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
V
V
Pch Channel dissipation Tc=25
Pin Input power Zg=Zl=50
ID Drain current - 7
Tch Channel temperature - 175
Tstg Storage temperature - -40 to +175
Rth j-c Thermal resistance junction to case 2.0
Note 1: Above parameters are guaranteed independently.
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
DSS
GSS
Publication Date : Oct．2011
Drain to source voltage Vgs=0V 30 V
Gate to source voltage Vds=0V +/-20 V
°C
1
75 W
2.5
°C
°C
°C/W
W
A
< Silicon RF Power MOS FET (Discrete) >
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
MIN TYP MAX.
I
DSS
I
GSS
V
Pout Output power f=175MHz ,VDD=12.5V 30 35 - W
D
Note : Above parameters , ratings , limits and conditions are subject to change.
Zero gate voltage drain current VDS=17V, VGS=0V - - 130 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Gate threshold voltage VDS=12V, IDS=1mA 1.3 1.8 2.3 V
TH
Drain efficiency Pin=1.0W, Idq=0.5A 55 60 - %
Load VSWR tolerance VDD=15.2V,Po=30W(PinControl)
f=175MHz,Idq=0.5A,Zg=50
Load VSWR=20:1(All Phase)
LIMITS UNIT
No destroy -
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
100
...
80
60
40
20
0
10
8
6
Ids(A)
4
2
0
AMBIENT TEMPERATURE
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
Ta=+25°C
0 2 4 6 8 10
Vds(V)
Vgs=5.5V
Vgs=5V
Vgs=4.5V
Vgs=4V
Vgs=3.5V
Vgs=3V
Vgs -Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
Ids(A)
4
2
0
0 1 2 3 4 5
Vds VS. Ciss CHARACTERISTICS
200
Ta=+25°C
180
f=1MHz
160
140
120
100
Ciss(pF)
80
60
40
20
0
0 5 10 15 20
Vgs(V)
Vds(V)
Coss(pF)
Publication Date : Oct．2011
Vds VS. Coss CHARACTERISTICS
140
Ta=+25°C
120
f=1MHz
100
80
60
40
20
0
0 5 10 15 20
Vds(V)
Vds VS. Crss CHARACTERISTICS
20
Ta=+25°C
f=1MHz
16
12
Crss (pF)
8
4
0
0 5 10 15 20
Vds(V)
3
< Silicon RF Power MOS FET (Discrete) >
Vds=10V
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
50
40
30
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=0.5A
Po
Gp
20
Po(dBm) , Gp(dB) , Idd(A)
10
0
0 10 20 30
Pin(dBm)
Vdd-Po CHARACTERISTICS
80
Ta=25°C
f=175MHz
Pin=1.0W
60
Idq=0.5A
Zg=ZI=50 ohm
40
Po(W)
20
Ｉｄｄ
Pin-Po CHARACTERISTICS
50
100
Po
40
η
ｄ
80
60
40
20
0
30
ηd(%)
20
Pout(W) , Idd(A)
10
ηd
Ta=25°C
f=175MHz
Vdd=12.5V
Idq=0.5A
Idd
0
100
80
60
40
20
0
ηd(%)
0 0.5 1 1.5 2 2.5
Pin(W)
Vgs -Ids CHARACTERISTICS 2
16
14
12
Po
10
8
Idd(A)
6
Idd
4
8
Tc=-25~+75°C -25°C
6
4
Ids(A)
2
+25°C
+75°C
0
4 6 8 10 12 14
Publication Date : Oct．2011
Vdd(V )
2
0
0
2 3 4 5
Vgs(V)
4
< Silicon RF Power MOS FET (Discrete) >
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
TEST CIRCUIT(f=175MHz)
RF-in
56pF
100pF
8.2kOHM
100
10
L2
8pF
32
Vdd
L1
43pF 5pF
44
54
90
C2
100
50pF
C3
RF-OUT
56pF
8
4.8
10.8
Vgg
C1
100pF33pF
51
90
L1
34
9.1kOHM
100OHM
10pF
175MHz
RD30HVF1
100pF
12
27
32
C1:2200pF 10uF in parallel
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
Note:Board material PTFE substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
Publication Date : Oct．2011
5
< Silicon RF Power MOS FET (Discrete) >
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=175MHz Zout
f=135MHz Zout
f=175MHz Zin
Zo=10
f=146MHz Zout
f=135MHz Zin
f=146MHz Zin
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
135 0.71-j7.67 1.72-j0.86 Po=40W, Vdd=12.5V,Pin=1.0W
146 0.94-j6.46 2.12-j0.78 Po=38W, Vdd=12.5V,Pin=1.0W
175 0.53-j5.34 1.87-j0.70 Po=35W, Vdd=12.5V,Pin=1.0W
Publication Date : Oct．2011
6
< Silicon RF Power MOS FET (Discrete) >
RD30HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
100
0.867
-172.4
8.747
72.7
0.015
-11.6
0.687
-166.3
150
0.879
-176.3
5.523
61.2
0.014
-18.8
0.723
-168.8
175
0.885
-177.5
4.571
56.4
0.013
-22.2
0.740
-169.6
200
0.888
-179.1
3.852
52.4
0.012
-24.2
0.760
-170.5
250
0.905
178.5
2.877
44.1
0.010
-26.2
0.806
-172.5
300
0.915
176.2
2.202
37.1
0.009
-27.0
0.825
-174.8
350
0.926
174.1
1.754
31.4
0.007
-24.4
0.853
-177.1
400
0.933
171.8
1.422
25.8
0.006
-18.5
0.879
-179.4
450
0.936
169.5
1.167
20.9
0.005
-8.2
0.887
178.4
500
0.945
167.6
0.985
17.2
0.004
8.0
0.902
176.1
550
0.950
165.6
0.842
13.3
0.005
21.6
0.914
174.1
600
0.951
163.6
0.725
9.8
0.005
35.6
0.918
172.2
650
0.954
161.7
0.635
7.2
0.005
45.7
0.928
170.2
700
0.957
159.9
0.559
3.7
0.007
53.5
0.933
168.4
750
0.962
158.2
0.495
1.3
0.007
58.4
0.936
166.6
800
0.963
156.5
0.449
-0.5
0.008
61.6
0.943
164.8
850
0.963
154.8
0.407
-3.8
0.009
60.7
0.947
163.3
900
0.963
153.2
0.366
-5.2
0.011
61.5
0.947
161.7
950
0.962
151.6
0.337
-6.6
0.011
63.1
0.953
159.9
1000
0.964
150.1
0.315
-9.9
0.013
65.6
0.955
158.7
1100
0.966
146.9
0.275
-12.1
0.015
62.3
0.958
155.5
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
S11 S21 S12 S22
Publication Date : Oct．2011
7
< Silicon RF Power MOS FET (Discrete) >
have
until cold after switch
his products without cause damage for human and
details
copies of the formal
(RF power transistors) are designed
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
predicted operating life time of
an authorized Mitsubishi
therefore
device is
It is
sink in conjunction with other cooling methods as needed (fan,
lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
the
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
, please refer the last page
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
for consumer mobile communication terminals and were not specifically designed for use in
under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.
8.
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
8
< Silicon RF Power MOS FET (Discrete) >
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
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examples contained in these materials.
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Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
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product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
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Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
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•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
9
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