MITSUBISHI RD30HVF User Manual
< Silicon RF Power MOS FET (Discrete) >
UNIT:mm
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
OUTLINE DRAWING
7.2+/-0.5
22.0+/-0.3
18.0+/-0.3
7.6+/-0.3
4-C1
FEATURES
High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.
RoHS COMPLIANT
RD30HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
2.8+/-0.3
1
6.6+/-0.3
2
14.0+/-0.4
R1.6
3
PIN
1.Drain
0.10
2.3+/-0.3
2.Source
3.Gate
5.1+/-0.5
3.0+/-0.4
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
V
V
Pch Channel dissipation Tc=25
Pin Input power Zg=Zl=50
ID Drain current - 7
Tch Channel temperature - 175
Tstg Storage temperature - -40 to +175
Rth j-c Thermal resistance junction to case 2.0
Note 1: Above parameters are guaranteed independently.
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
DSS
GSS
Publication Date : Oct．2011
Drain to source voltage Vgs=0V 30 V
Gate to source voltage Vds=0V +/-20 V
°C
1
75 W
2.5
°C
°C
°C/W
W
A
< Silicon RF Power MOS FET (Discrete) >
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
MIN TYP MAX.
I
DSS
I
GSS
V
Pout Output power f=175MHz ,VDD=12.5V 30 35 - W
D
Note : Above parameters , ratings , limits and conditions are subject to change.
Zero gate voltage drain current VDS=17V, VGS=0V - - 130 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Gate threshold voltage VDS=12V, IDS=1mA 1.3 1.8 2.3 V
TH
Drain efficiency Pin=1.0W, Idq=0.5A 55 60 - %
Load VSWR tolerance VDD=15.2V,Po=30W(PinControl)
f=175MHz,Idq=0.5A,Zg=50
Load VSWR=20:1(All Phase)
LIMITS UNIT
No destroy -
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
100
...
80
60
40
20
0
10
8
6
Ids(A)
4
2
0
AMBIENT TEMPERATURE
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
Ta=+25°C
0 2 4 6 8 10
Vds(V)
Vgs=5.5V
Vgs=5V
Vgs=4.5V
Vgs=4V
Vgs=3.5V
Vgs=3V
Vgs -Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
Ids(A)
4
2
0
0 1 2 3 4 5
Vds VS. Ciss CHARACTERISTICS
200
Ta=+25°C
180
f=1MHz
160
140
120
100
Ciss(pF)
80
60
40
20
0
0 5 10 15 20
Vgs(V)
Vds(V)
Coss(pF)
Publication Date : Oct．2011
Vds VS. Coss CHARACTERISTICS
140
Ta=+25°C
120
f=1MHz
100
80
60
40
20
0
0 5 10 15 20
Vds(V)
Vds VS. Crss CHARACTERISTICS
20
Ta=+25°C
f=1MHz
16
12
Crss (pF)
8
4
0
0 5 10 15 20
Vds(V)
3
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