MITSUBISHI RD20HMF1 User Manual
< Silicon RF Power MOS FET (Discrete) >
UNIT:mm
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
DESCRIPTION
RD20HMF1 is a MOS FET type transistor specifically
designed for 900MHz-band RF power amplifiers
applications.
7.2+/-0.5
OUTLINE DRAWING
22.0+/-0.3
18.0+/-0.3
7.6+/-0.3
4-C1
FEATURES
High power gain:
Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz
High Efficiency: 55%typ.
APPLICATION
For output stage of high power amplifiers in 900MHz band
Mobile radio sets.
RoHS COMPLIANT
RD20HMF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
2.8+/-0.3
1
6.6+/-0.3
2
14.0+/-0.4
R1.6
3
PIN
1.Drain
0.10
2.3+/-0.3
2.Source
3.Gate
5.1+/-0.5
3.0+/-0.4
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
V
DSS
V
GSS
Pch Channel dissipation Tc=25
Pin Input power Zg=Zl=50
ID Drain current - 6
Tch Channel temperature - 175
Tstg Storage temperature - -40 to +175
Rth j-c Thermal resistance junction to case 2.1
Note 1: Above parameters are guaranteed independently.
Publication Date : Oct．2011
Drain to source voltage Vgs=0V 30 V
Gate to source voltage Vds=0V +/-20 V
°C
1
71.4 W
6
°C
°C
°C/W
W
A
< Silicon RF Power MOS FET (Discrete) >
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
MIN TYP MAX.
I
DSS
I
GSS
V
Pout Output power f=900MHz ,VDD=12.5V 20 25 - W
D
Note : Above parameters , ratings , limits and conditions are subject to change.
Zero gate voltage drain current VDS=17V, VGS=0V - - 5 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Gate threshold voltage VDS=12V, IDS=1mA 1.0 - 3.0 V
TH
Drain efficiency Pin=3.0W, Idq=1.0A 50 55 - %
Load VSWR tolerance VDD=15.2V,Po=20W(PinControl)
Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
LIMITS UNIT
No destroy -
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
100
AMBIENT TEM PERATURE
80
60
40
20
0
0 40 80 120 160 200
AMBIENT TEMPERATURETa(°C)
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
8
6
Vgs=5V
Vgs=4.5V
Vgs=4V
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
Ids(A)
4
2
0
0 1 2 3 4 5
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
100
Ta=+25°C
f=1MHz
80
60
Ids(A)
4
2
0
0 2 4 6 8 10
Vds(V)
Vds VS. Coss CHARACTERISTICS
140
Ta=+25°C
f=1MHz
120
100
80
60
Coss(pF)
40
20
0
0 5 10 15 20
Vds( V)
Vgs=3.5V
Vgs=3V
Vgs=2.5V
Vgs=2V
Ciss(pF)
40
20
0
0 5 10 15 20
Vds( V)
Vds VS. Crss CHARACTERISTICS
14
Ta=+25°C
f=1MHz
12
10
8
6
Crss (pF)
4
2
0
0 5 10 15 20
Vds(V)
Publication Date : Oct．2011
3
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