MITSUBISHI RD16HHF1 User Manual
< Silicon RF Power MOS FET (Discrete) >
Dimension in mm.
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
OUTLINE DRAWING
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically
9.1+/-0.7
1.3+/-0.4
designed for HF RF power amplifiers applications.
FEATURES
High power gain:
Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in
HF band mobile radio sets.
RoHS COMPLIANT
RD16HHF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
marking.
3.2+/-0.4
12.3+/-0.6
9+/-0.4
4.8MAX
12.3MIN
1
2.5
5deg
9.5MAX
note:
2
2.5
3.6+/-0.2
2
1.2+/-0.4
0.8+0.10/-0.15
3
-0.6
3.1+/
0.5+0.10/-0.15
4.5+/-0.5
PINS
1:GATE
2:SOURCE
3:DRAIN
Torelance of no designation means typical value.
This product include the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
V
DSS
V
GSS
Pch Channel dissipation Tc=25
Pin Input power Zg=Zl=50
ID Drain to source current - 5 A
Tch Channel temperature - 150
Tstg Storage temperature - -40 to +150
Rth j-c Thermal resistance junction to case 2.2
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS
I
DSS
Drain to source voltage Vgs=0V 50 V
Gate to source voltage Vds=0V +/- 20 V
°C
56.8 W
0.8 W
°C
°C
°C/W
(Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
MIN TYP MAX.
Zero gate voltage drain current VDS=17V, VGS=0V - - 10 uA
I
GSS
V
Pout Output power VDD=12.5V, Pin=0.4W, 16 19 - W
D
Note : Above parameters , ratings , limits and conditions are subject to change.
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Gate threshold voltage VDS=12V, IDS=1mA 1.7 - 4.7 V
TH
Drain efficiency f=30MHz, Idq=0.5A 55 65 - %
Load VSWR tolerance VDD=15.2V,Po=16W(Pin Control)
f=30MHz,Idq=0.5A,Zg=50
Load VSWR=20:1(All Phase)
No destroy -
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
80
60
40
Pch(W)
20
CHANNEL DISSIPATION
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
8
Ta=+25°C
6
4
Ids(A)
2
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs-Ids CHARACTERISTICS
10
Vds=10V
8
Ta=+25°C
6
Ids(A)
4
2
0
0 2 4 6 8 10
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
60
50
40
30
Ciss(pF)
20
10
Ta=+25°C
f=1MHz
0
0 2 4 6 8 10
Vds VS. Coss CHARACTERISTICS
100
Ta=+25°C
Ta=+25°C
f=1MHz
80
60
40
Coss(pF)
20
f=1MHz
0
0 10 20 30
Vds(V)
Ta=+25°C
f=1MHz
Vds(V)
Vgs=5V
0
0 10 20 30
Vds(V)
Vds VS. Crss CHARACTERISTICS
10
Ta=+25°C
8
f=1MHz
6
4
Crss(pF)
2
0
0 10 20 30
Vds(V)
Publication Date : Oct．2011
3
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