< Silicon RF Power MOS FET (Discrete) >
Dimension in mm.
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
OUTLINE DRAWING
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically
9.1+/-0.7
1.3+/-0.4
designed for HF RF power amplifiers applications.
FEATURES
High power gain:
Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in
HF band mobile radio sets.
RoHS COMPLIANT
RD16HHF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
marking.
3.2+/-0.4
12.3+/-0.6
9+/-0.4
4.8MAX
12.3MIN
1
2.5
5deg
9.5MAX
note:
2
2.5
3.6+/-0.2
2
1.2+/-0.4
0.8+0.10/-0.15
3
-0.6
3.1+/
0.5+0.10/-0.15
4.5+/-0.5
PINS
1:GATE
2:SOURCE
3:DRAIN
Torelance of no designation means typical value.
This product include the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
V
DSS
V
GSS
Pch Channel dissipation Tc=25
Pin Input power Zg=Zl=50
ID Drain to source current - 5 A
Tch Channel temperature - 150
Tstg Storage temperature - -40 to +150
Rth j-c Thermal resistance junction to case 2.2
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS
I
DSS
Drain to source voltage Vgs=0V 50 V
Gate to source voltage Vds=0V +/- 20 V
°C
56.8 W
0.8 W
°C
°C
°C/W
(Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
MIN TYP MAX.
Zero gate voltage drain current VDS=17V, VGS=0V - - 10 uA
I
GSS
V
Pout Output power VDD=12.5V, Pin=0.4W, 16 19 - W
D
Note : Above parameters , ratings , limits and conditions are subject to change.
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Gate threshold voltage VDS=12V, IDS=1mA 1.7 - 4.7 V
TH
Drain efficiency f=30MHz, Idq=0.5A 55 65 - %
Load VSWR tolerance VDD=15.2V,Po=16W(Pin Control)
f=30MHz,Idq=0.5A,Zg=50
Load VSWR=20:1(All Phase)
No destroy -
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
80
60
40
Pch(W)
20
CHANNEL DISSIPATION
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
8
Ta=+25°C
6
4
Ids(A)
2
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs-Ids CHARACTERISTICS
10
Vds=10V
8
Ta=+25°C
6
Ids(A)
4
2
0
0 2 4 6 8 10
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
60
50
40
30
Ciss(pF)
20
10
Ta=+25°C
f=1MHz
0
0 2 4 6 8 10
Vds VS. Coss CHARACTERISTICS
100
Ta=+25°C
Ta=+25°C
f=1MHz
80
60
40
Coss(pF)
20
f=1MHz
0
0 10 20 30
Vds(V)
Ta=+25°C
f=1MHz
Vds(V)
Vgs=5V
0
0 10 20 30
Vds(V)
Vds VS. Crss CHARACTERISTICS
10
Ta=+25°C
8
f=1MHz
6
4
Crss(pF)
2
0
0 10 20 30
Vds(V)
Publication Date : Oct．2011
3
< Silicon RF Power MOS FET (Discrete) >
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
50
Ta=+25°C
40
f=30MHz
Vdd=12.5V
Idq=0.5A
Gp
Po
30
20
10
Po(dBm) , Gp(dB),Idd(A)
0
-10 0 10 20 30
Pin(dBm)
Vdd-Po CHARACTERISTICS
30
Ta=25°C
25
f=30MHz
Pin=0.4W
Idq=0.5A
20
Zg=ZI=50 ohm
15
Po(W)
10
5
Pin-Po CHARACTERISTICS
Ｉｄｄ
100
80
ηｄ
60
d(%)
η
40
20
0
25
ηd
Po
Ta=+25°C
f=30MHz
Vdd=12.5V
Idq=0.5A
20
15
10
Pout(W) Idd(A)
5
Idd
0
100
80
60
40
20
0
d(%)
η
0.0 0.2 0.4 0.6 0.8
Pin(W)
Vgs-Ids CHARACTERISTICS 2
6
5
Po
8
Vds=10V
Tc=-25~+75°C
6
+25°C
-25°C
4
Idd
3
Idd(A)
4
Ids(A)
+75°C
2
2
1
0
4 6 8 10 12 14
Vdd(V)
0
0
2 4 6 8 10
Vgs(V)
Publication Date : Oct．2011
4
< Silicon RF Power MOS FET (Discrete) >
RF-in
RF-OUT
C2：470pF*2 in parallel
Micro strip line width=4.2mm/50 ohm,er:2.7,t=1.6mm
wire
L5: 5 Turns,I.D5.6mm,D0.9mm ,P=1mm copper wire
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
TEST CIRCUIT(f=30MHz)
Vgg Vdd
C1
220pF
C1
220pF
68pF
68pF
100
100pF
100pF
90
1K ohm
L3
85
C1
1 ohm
82pF
15
65
75
C1：100pF,0.022μF,0.1μF in parallel
L1: 10 Turns,I.D8mm,D0.9mm copper wire
L2: 10 Turns,I.D6mm,D1.6mm silver plateted copper
5
RD16HHF1
L2
L1
100pF 200pF 200pF
15
C1
330μF,50V8.2K ohm
10μF,50V*3pcs
C1
88pF
L4
1.5
34
41
43
45
67
Dimensions:mm
Note:Board material PTFE substrate
L5
91
C2
100
L3: 9 Turns,I.D5.6mm,D0.9mm copper wire
L4: 4 Turns,I.D5.6mm,D0.9mm ,P=0.5mm copper wire
Publication Date : Oct．2011
5
< Silicon RF Power MOS FET (Discrete) >
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zo=50Ω
f=30MHz Zout
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
30 20.02-j89.42 2.99-j3.66 Po=20W, Vdd=12.5V,Pin=0.4W
f=30MHz Zin
Publication Date : Oct．2011
6
< Silicon RF Power MOS FET (Discrete) >
RD16HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
10
0.928
-43.2
50.035
150.2
0.013
60.6
0.705
-44.6
30
0.761
-96.8
32.680
117.1
0.025
34.3
0.588
-92.6
50
0.676
-121.9
22.018
101.3
0.027
24.3
0.540
-116.9
100
0.650
-145.8
11.543
81.0
0.025
20.3
0.543
-138.4
150
0.679
-156.4
7.560
66.2
0.023
27.0
0.586
-147.1
200
0.709
-162.7
5.380
55.7
0.022
46.4
0.633
-153.2
250
0.742
-168.0
4.126
45.9
0.026
63.2
0.698
-158.1
300
0.775
-173.0
3.208
36.9
0.034
74.4
0.727
-163.2
350
0.801
-177.7
2.592
29.6
0.045
78.3
0.769
-168.0
400
0.826
177.7
2.133
22.6
0.056
78.4
0.805
-172.8
450
0.844
173.2
1.775
16.6
0.069
78.1
0.822
-176.8
500
0.861
169.0
1.509
11.3
0.081
75.3
0.851
178.9
550
0.874
164.8
1.283
5.9
0.093
73.1
0.867
174.7
600
0.884
160.7
1.114
2.1
0.104
69.8
0.877
170.9
650
0.892
156.9
0.974
-1.9
0.117
67.2
0.894
166.9
700
0.900
153.0
0.855
-5.3
0.129
63.7
0.897
163.4
750
0.903
149.1
0.759
-8.4
0.140
60.6
0.904
159.6
800
0.908
145.5
0.678
-11.3
0.150
56.8
0.914
155.9
850
0.912
141.7
0.614
-13.5
0.161
53.8
0.915
152.9
900
0.912
137.9
0.559
-15.3
0.172
50.4
0.917
149.0
950
0.913
134.3
0.509
-17.3
0.180
47.1
0.922
145.4
1000
0.913
130.7
0.467
-17.9
0.190
43.6
0.920
142.4
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
S11 S21 S12 S22
Publication Date : Oct．2011
7
< Silicon RF Power MOS FET (Discrete) >
have
until cold after switch
his products without cause damage for human and
details
copies of the formal
(RF power transistors) are designed
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
predicted operating life time of
an authorized Mitsubishi
therefore
device is
It is
sink in conjunction with other cooling methods as needed (fan,
lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
the
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
, please refer the last page
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
for consumer mobile communication terminals and were not specifically designed for use in
under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.
8.
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
8
< Silicon RF Power MOS FET (Discrete) >
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
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examples contained in these materials.
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Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
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product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
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Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
9
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