< Silicon RF Power MOS FET (Discrete) >
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
DESCRIPTION
OUTLINE DRAWING
RD12MVS1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
FEATURES
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
RoHS COMPLIANT
RD12MVS1-101,T112 is a RoHS compliant products.
6.0+/-0.15
INDEX MARK
(Gate)
4.6+/-0.05
3.3+/-0.05
1
2
3
0.8+/-0.05
(0.25)
2.0+/-0.05
3.5+/-0.05
(0.22) (0.22)
0.2+/-0.05
4.9+/-0.15
0.9+/-0.1
0.2+/-0.05
1.0+/-0.05
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
V
DSS
V
GSS
ID Drain Current 4 A
Pin Input Power Zg=Zl=50
Pch Channel Dissipation Tc=25
Tj Junction Temperature 150
Tstg Storage Temperature -40 to +125
Rthj-c Thermal Resistance Junction to Case 2.5
Drain to Source Voltage VGS=0V 50 V
Gate to Source Voltage VDS=0V +/- 20 V
°C
2 W
50 W
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS
I
DSS
I
GSS
V
Pout Output Power 11.5 12 - W
D
Note: Above parameters, ratings, limits and conditions are subject to change.
Zero Gate Voltage Drain Current VDS=17V, VGS=0V - - 10 uA
Gate to Source Leak Current VGS=10V, VDS=0V - - 1 uA
Gate Threshold Voltage VDS=12V, IDS=1mA 1.8 - 4.4 V
TH
Drain Efficiency
Load VSWR tolerance
(Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
MIN. TYP. MAX.
f=175MHz,VDD=7.2V
Pin=1.0W,Idq=1.0A
VDD=9.2V,Po=12W(Pin Control)
f=175MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
55 57 - %
Not destroy -
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
60
...
50
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy(t=0.6mm)
40
30
20
On PCB(*1)
withthrogh hole
and Heat-sink
On PCB(*1) with Heat-sink
10
0
0 40 80 120 160 200
AMBIENT TEMPERATURETa(°C)
Vds -Ids CHARACTERISTICS
9
Ta=+25°C
8
7
6
5
4
Ids(A)
3
2
1
0
0 2 4 6 8 10
Vds(V)
Vgs=7.5V
Vgs=6.0V
Vgs=5.5V
Vgs=5.0V
Vgs=4.5V
Vgs=4.0V
Vgs=3.5V
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
4
Ids(A),GM(S)
GM
2
0
0 1 2 3 4 5 6 7
Vgs(V)
Vds V S. Ciss CHARACTERISTICS
160
Ta=+25°C
f=1MHz
140
120
100
80
Ciss(pF)
60
40
20
0
0 5 10 15 20
Vds(V)
Ids
Publication Date : Oct．2011
Vds VS. Cos s CHARACTERISTICS
180
160
140
120
100
80
Coss( pF)
60
40
20
0
0 5 10 15 20
Vds(V)
Ta=+25°C
f=1MHz
Vds V S. Crs s CHARACTERISTICS
20
18
Ta=+25°C
f=1MHz
16
14
12
10
Crss (pF)
8
6
4
2
0
0 5 10 15 20
Vds(V)
3
< Silicon RF Power MOS FET (Discrete) >
Vdd=7.2V
Vdd=7.2V
Vds =10V
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175M Hz
40
Ta=+ 25°C
f=175MH z
Idq= 1.0A
Po
30
Gp
20
10
Po(dBm) , G p( dB) , Idd(A)
0
-5 0 5 10 15 20 25 30
Pin(dBm)
Vdd- Po CHARACTERISTICS @f=175M Hz
25
Ta= 25°C
f=175MH z
Pin=0.3W
20
Icq =700mA
Zg =ZI=50 ohm
Idd
15
Po(W)
10
5
Pin-Po CHARACT ERISTICS @ f=175M Hz
14
80
η
ｄ
60
12
10
8
40
ηd(%)
20
Ｉｄｄ
0
6
Pout(W) , Idd(A)
4
2
0
Po
Ta= 25°C
f=175MH z
ηd
Idq= 1.0A
Idd
90
80
70
60
50
40
30
20
ηd(%)
0 200 400 600 800 1000
Pin(mW)
Vgs -Ids CHARAC TORISTIC S 2
5
Po
4
8
Tc=-25~+75°C
6
+25°C
-25°C
+75°C
3
4
Idd( A)
2
Ids(A),G M(S)
2
1
0
4 6 8 10 12
Vdd( V )
Publication Date : Oct．2011
0
0
0 2 4 6 8
Vgs (V )
4
< Silicon RF Power MOS FET (Discrete) >
INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TEST CIRCUIT (f=175MHz)
RF-in
47pF
330pF
35mm
Note:Boad material PTFE substrate
Micro strip line width=2.2mm/50 、er:2.7、t=0.8mm
W:Line width=1.0mm
Chip Condencer :GRM40
3mm
100pF
Copper Board spring t=0.1mm
L1
8nH
C1
4.7kOHM
4mm
15pF
Vgg
C2
W W
Contact
3.5mm
RD12MV
S1
L:Enameled Wire
L1:4Turns、D:0.43mm、φ1.66mm(outside diameter)
L2:6Turns、D:0.43mm、φ2.46mm(outside diameter)
C1、C2:1000ｐF
C3: 10μF、50V
12mm
Contact
3.5mm
6.0mm
C3
L2
24.9nH
5.0mm
24pF
Vdd
33pF
20mm
25mm
68pF
RF-OUT
330pF
175MHz Zin* Zout*
Zo=50Ω
f=175MHz Zout*
f=175MHz Zin*
Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W
Zin*=0.965-j7.73
Zout*=1.73-j1.14
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of output impedance
Publication Date : Oct．2011
5
< Silicon RF Power MOS FET (Discrete) >
RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
25
0.824
-159.3
26.397
93.4
0.018
-3.3
0.761
-160.3
50
0.816
-169.0
13.193
85.2
0.016
1.4
0.765
-168.1
75
0.817
-171.7
8.716
79.3
0.016
-10.9
0.778
-170.7
100
0.829
-172.8
6.537
74.5
0.016
-14.1
0.787
-170.3
125
0.837
-173.4
5.110
68.5
0.016
-18.2
0.800
-171.7
150
0.845
-173.9
4.117
64.2
0.015
-18.3
0.796
-172.3
175
0.852
-174.0
3.402
60.8
0.016
-15.1
0.810
-172.3
200
0.860
-174.3
2.896
57.2
0.012
-30.4
0.836
-172.2
225
0.870
-175.0
2.525
53.2
0.014
-29.9
0.858
-172.2
250
0.876
-175.0
2.175
48.9
0.013
-24.5
0.855
-173.0
275
0.886
-175.6
1.897
46.5
0.012
-39.4
0.859
-173.3
300
0.891
-175.8
1.675
43.6
0.012
-53.1
0.860
-173.4
325
0.902
-175.9
1.496
41.0
0.014
-32.9
0.886
-174.5
350
0.903
-176.2
1.348
38.3
0.012
-32.2
0.898
-174.6
375
0.909
-176.7
1.208
35.7
0.009
-29.2
0.898
-175.0
400
0.907
-177.6
1.087
33.7
0.009
-21.6
0.893
-175.6
425
0.912
-177.9
0.996
31.6
0.009
-32.5
0.903
-175.7
450
0.923
-178.3
0.912
29.7
0.004
-37.2
0.910
-176.6
475
0.928
-178.5
0.836
27.9
0.008
-25.9
0.917
-176.8
500
0.934
-178.6
0.748
25.8
0.007
-21.3
0.925
-177.3
525
0.932
-178.8
0.707
23.6
0.005
-46.6
0.922
-177.6
550
0.936
-179.2
0.647
23.2
0.006
-25.0
0.922
-177.6
575
0.932
179.6
0.591
20.8
0.004
-40.9
0.939
-178.0
600
0.935
179.1
0.562
20.0
0.003
-33.6
0.939
-178.9
625
0.939
179.2
0.520
17.4
0.003
17.7
0.938
-179.3
650
0.939
179.4
0.485
15.5
0.003
25.4
0.930
-179.5
675
0.943
179.1
0.460
15.6
0.003
51.4
0.932
-179.9
700
0.945
178.7
0.435
15.5
0.002
5.7
0.946
-179.9
725
0.943
177.5
0.407
13.3
0.004
5.6
0.949
179.3
750
0.939
177.2
0.380
12.2
0.001
-16.1
0.940
179.0
775
0.943
176.9
0.358
10.8
0.004
58.8
0.935
178.8
800
0.948
176.8
0.327
8.6
0.002
-6.7
0.943
178.2
825
0.951
177.1
0.308
8.0
0.003
40.4
0.945
177.5
850
0.953
176.7
0.314
8.5
0.003
77.0
0.948
176.8
875
0.952
176.1
0.284
7.0
0.006
46.5
0.946
176.7
900
0.954
175.4
0.269
9.7
0.003
64.5
0.950
176.7
925
0.944
174.4
0.254
6.7
0.007
60.3
0.946
176.0
950
0.951
174.6
0.250
6.0
0.006
69.7
0.952
175.7
975
0.954
175.0
0.232
1.9
0.003
80.3
0.959
175.0
1000
0.955
175.0
0.227
7.8
0.003
86.7
0.950
174.8
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
S11 S21 S12 S22
Publication Date : Oct．2011
6
< Silicon RF Power MOS FET (Discrete) >
have
until cold after switch
his products without cause damage for human and
details
copies of the formal
(RF power transistors) are designed
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
predicted operating life time of
an authorized Mitsubishi
therefore
device is
It is
sink in conjunction with other cooling methods as needed (fan,
lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
the
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
, please refer the last page
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
for consumer mobile communication terminals and were not specifically designed for use in
under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.
8.
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
7
< Silicon RF Power MOS FET (Discrete) >
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
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•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
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aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
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•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
8
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