MITSUBISHI RD12MVS1 User Manual

< Silicon RF Power MOS FET (Discrete) >

RD12MVS1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W

DESCRIPTION

OUTLINE DRAWING

RD12MVS1 is a MOS FET type transistor

specifically designed for VHF RF power

amplifiers applications.

FEATURES

High Power Gain:

Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz

High Efficiency: 57%typ. (175MHz)

APPLICATION

For output stage of high power amplifiers in

VHF band mobile radio sets.

RoHS COMPLIANT

RD12MVS1-101,T112 is a RoHS compliant products.

6.0+/-0.15

INDEX MARK

(Gate)

4.6+/-0.05

3.3+/-0.05

1

2

3

0.8+/-0.05

(0.25)

2.0+/-0.05

3.5+/-0.05

(0.22) (0.22)

0.2+/-0.05

4.9+/-0.15

0.9+/-0.1

0.2+/-0.05

1.0+/-0.05

(0.25)

Terminal No.

1.Drain (output)

2.Source (GND)

3.Gate (input)

Note
( ):center value
UNIT:mm

RoHS compliance is indicating by the letter “G” after the Lot Marking.

This product includes the lead in high melting temperature type solders.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.)

ABSOLUTE MAXIMUM RATINGS

(Tc=25°C, UNLESS OTHERWISE NOTED)

SYMBOL PARAMETER CONDITIONS RATINGS UNIT

V

DSS

V

GSS

ID Drain Current 4 A

Pin Input Power Zg=Zl=50

Pch Channel Dissipation Tc=25

Tj Junction Temperature 150

Tstg Storage Temperature -40 to +125

Rthj-c Thermal Resistance Junction to Case 2.5

Drain to Source Voltage VGS=0V 50 V

Gate to Source Voltage VDS=0V +/- 20 V



°C

2 W

50 W

°C

°C

°C/W

Note: Above parameters are guaranteed independently.

Publication Date : Oct．2011

1

< Silicon RF Power MOS FET (Discrete) >

RD12MVS1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS

I

DSS

I

GSS

V

Pout Output Power 11.5 12 - W

D

Note: Above parameters, ratings, limits and conditions are subject to change.

Zero Gate Voltage Drain Current VDS=17V, VGS=0V - - 10 uA

Gate to Source Leak Current VGS=10V, VDS=0V - - 1 uA

Gate Threshold Voltage VDS=12V, IDS=1mA 1.8 - 4.4 V

TH

Drain Efficiency

Load VSWR tolerance

(Tc=25°C, UNLESS OTHERWISE NOTED)

LIMITS UNIT

MIN. TYP. MAX.

f=175MHz,VDD=7.2V

Pin=1.0W,Idq=1.0A

VDD=9.2V,Po=12W(Pin Control)

f=175MHz,Idq=1.0A,Zg=50

Load VSWR=20:1(All Phase)



55 57 - %

Not destroy -

Publication Date : Oct．2011

2

< Silicon RF Power MOS FET (Discrete) >

CHANNEL DISSIPATION Pch(W)

RD12MVS1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W

TYPICAL CHARACTERISTICS

CHANNEL DISSIPATION VS.

60

...

50

AMBIENT TEMPERATURE

*1:The material of the PCB

Glass epoxy(t=0.6mm)

40

30

20

On PCB(*1)

withthrogh hole

and Heat-sink

On PCB(*1) with Heat-sink

10

0

0 40 80 120 160 200

AMBIENT TEMPERATURETa(°C)

Vds -Ids CHARACTERISTICS

9

Ta=+25°C

8

7

6

5

4

Ids(A)

3

2

1

0

0 2 4 6 8 10

Vds(V)

Vgs=7.5V

Vgs=6.0V

Vgs=5.5V

Vgs=5.0V

Vgs=4.5V

Vgs=4.0V

Vgs=3.5V

Vgs-Ids CHARACTERISTICS

10

Ta=+25°C
Vds=10V

8

6

4

Ids(A),GM(S)

GM

2

0

0 1 2 3 4 5 6 7

Vgs(V)

Vds V S. Ciss CHARACTERISTICS

160

Ta=+25°C
f=1MHz

140

120

100

80

Ciss(pF)

60

40

20

0

0 5 10 15 20

Vds(V)

Ids

Publication Date : Oct．2011

Vds VS. Cos s CHARACTERISTICS

180

160

140

120

100

80

Coss( pF)

60

40

20

0

0 5 10 15 20

Vds(V)

Ta=+25°C
f=1MHz

Vds V S. Crs s CHARACTERISTICS

20

18

Ta=+25°C
f=1MHz

16

14

12

10

Crss (pF)

8

6

4

2

0

0 5 10 15 20

Vds(V)

3