< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
24.0+/-0.6
5.0+/-0.3
18.5+/-0.3
9.6+/-0.3
2
R1.6+/-0.15
4-C2
10.0+/-0.3
+0.05
0.1
-0.01
4.5+/-0.7
6.2+/-0.7
1
3
PIN
1.DRAIN
2.SOURCE
3.3+/-0.2
3.GATE
UNIT:mm
RoHS COMPLIANT
RD100HHF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
V
DSS
V
GSS
Pch Channel dissipation Tc=25
Pin Input power Zg=Zl=50
ID Drain current - 25
Tch Channel temperature - 175
Tstg Storage temperature - -40 to +175
Rth j-c Thermal resistance junction to case 0.85
Note 1: Above parameters are guaranteed independently.
Drain to source voltage Vgs=0V 50 V
Gate to source voltage Vds=0V +/-20 V
°C
176.5 W
12.5
°C
°C
°C/W
W
A
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS
I
DSS
I
GSS
V
Pout Output power f=30MHz ,VDD=12.5V 100 110 - W
D
Note : Above parameters , ratings , limits and conditions are subject to change.
Zerogate voltage drain current VDS=17V, VGS=0V - - 10 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Gate threshold voltage VDS=12V, IDS=1mA 1.5 - 4.5 V
TH
Drain efficiency Pin=7W, Idq=1.0A 55 60 - %
Load VSWR tolerance VDD=15.2V,Po=100W(Pin Control)
(Tc=25°CUNLESS OTHERWISE NOTED)
MIN TYP MAX.
No destroy -
f=30MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
LIMITS UNIT
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
Ciss(pF)
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATIONVS.
200
...
AMBIENT TEMPERATURE
160
120
80
40
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
8
6
Ids(A)
4
2
0
0 2 4 6 8 10
Vds(V)
Vgs=6V
Vgs=5.7V
Vgs=5.4V
Vgs=5.1V
Vgs=4.8V
Vgs=4.5V
Vgs=4.2V
Vgs -Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
Ids(A)
4
2
0
0 1 2 3 4 5 6 7
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
300
250
Ta=+25°C
f=1MHz
200
150
100
50
0
0 10 20 30
Vds(V)
Publication Date : Oct．2011
Vds VS. Cos s CHARACTERISTICS
500
Ta=+25°C
f=1MHz
400
300
200
Coss(pF)
100
0
0 10 20 30
Vds(V)
Vds VS. Crs s CHARACTERISTICS
40
Ta=+25°C
f=1MHz
30
20
Crss(pF)
10
0
0 10 20 30
Vds(V)
3
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
Ta=+25°C
50
f=30MHz
Vdd=12.5V
Idq=1A
40
30
Gp
Idd(A)
20
Po(dBm) , Gp(dB) ,
10
0
0 10 20 30 40
Pin(dBm)
Vdd-Po CHARACTERISTICS
140
Ta=25°C
120
f=30MHz
Pin=7W
100
Idq=1A
Zg=ZI=50 ohm
80
60
Po(W)
40
20
0
4 6 8 10 12 14
Vdd(V)
Pin-Po CHARACTERISTICS
120
Po
Ｉｄｄ
100
100
80
η
ｄ
60
d(%)
η
40
80
60
40
Pout(W) , Idd(A)
20
0
20
0
Po
Ta=25°C
f=30MHz
Vdd=12.5V
Idd
Idq=1A
80
70
ηd
60
50
ηd(%)
40
30
20
0 2 4 6 8 10
Pin(W)
Vgs-Ids CHARACTERISTICS 2
28
26
24
Po
22
10
8
Vds=10V
Tc=-25~+75°C
+25°C
20
Idd
18
16
14
12
10
Idd(A)
6
Ids(A)
4
+75°C
8
6
4
2
-25°C
2
0
0
0 1 2 3 4 5 6 7
Vgs(V)
Publication Date : Oct．2011
4
< Silicon RF Power MOS FET (Discrete) >
Micro strip line width=4.2mm/50
L4: 1 Turns,I.D10mm,D1.6mm silver plateted copper wire
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
TEST CIRCUIT(f=30MHz)
Vgg Vdd
Pin
5mm
1000pF
220pF
220pF
C1 C1 330μF,50V
C1
20pF
L3
4.7 ohm
20pF
68
75
90
93
100
9.1K ohm
4.7K ohm
19
30
C1：100pF,0.022μF,0.1μF in parallel Dimensions:mm
Note:Board material PTFE substrate
L1: 8 Turns,I.D8mm,D1.6mm silver plateted copper wire
L2: 10 Turns,I.D8mm,D1.6mm silver plateted copper wire
L3: 5 Turns,I.D6mm,D0.7mm copper wire P=1mm
L2
180pF 200pF
180pF 200pF
18
82pF 82pF C1
L1
4.5
21
24
82pF 82pF
43
10μF,50V
50
53
L4
82pF 330pF 82pF
56
93
82pF 330pF 82pF
100
14
1000pF
12
8
POUT
Publication Date : Oct．2011
5
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zo=10
f=30MHz Zout
f=30MHz Zin
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
30 8.86-j14.31 0.64-j0.01 Po=115W, Vdd=12.5V,Pin=7W
Publication Date : Oct．2011
6
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
10
0.835
-158.6
31.451
94.8
0.014
5.2
0.770
-162.1
30
0.839
-171.1
10.628
79.3
0.014
-9.9
0.764
-171.6
50
0.849
-172.9
6.212
71.0
0.012
-20.7
0.786
-171.4
100
0.886
-173.9
2.749
54.1
0.012
-34.1
0.842
-171.4
150
0.915
-175.1
1.541
40.2
0.009
-27.8
0.880
-173.6
200
0.932
-176.4
0.972
31.6
0.007
-36.9
0.908
-174.3
250
0.945
-177.3
0.671
24.5
0.006
-54.4
0.946
-176.2
300
0.951
-178.2
0.481
20.1
0.005
-30.4
0.941
-177.4
350
0.958
-179.3
0.365
15.2
0.003
13.1
0.952
-178.3
400
0.960
-179.8
0.291
13.4
0.003
-18.0
0.974
-179.8
450
0.964
179.5
0.243
8.5
0.004
45.3
0.963
179.6
500
0.966
178.7
0.195
6.8
0.003
42.3
0.971
178.6
550
0.970
178.2
0.154
5.2
0.004
78.6
0.975
177.5
600
0.967
177.5
0.133
4.8
0.005
80.1
0.965
176.8
650
0.971
177.0
0.119
1.0
0.003
72.0
0.972
176.0
700
0.970
176.5
0.109
-1.3
0.006
61.3
0.973
175.1
750
0.969
175.6
0.092
0.6
0.007
67.2
0.964
174.9
800
0.970
175.2
0.080
-4.0
0.005
82.2
0.974
173.9
850
0.976
174.5
0.073
-1.9
0.007
78.7
0.969
173.3
900
0.973
173.9
0.067
-5.4
0.008
69.9
0.973
172.6
950
0.973
173.2
0.058
4.1
0.008
86.8
0.973
171.5
1000
0.977
172.6
0.049
-8.7
0.011
78.7
0.971
171.7
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
S11 S21 S12 S22
Publication Date : Oct．2011
7
< Silicon RF Power MOS FET (Discrete) >
have
until cold after switch
his products without cause damage for human and
details
copies of the formal
(RF power transistors) are designed
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
predicted operating life time of
an authorized Mitsubishi
therefore
device is
It is
sink in conjunction with other cooling methods as needed (fan,
lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
the
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
, please refer the last page
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
for consumer mobile communication terminals and were not specifically designed for use in
under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.
8.
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
8
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
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product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
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Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
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•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
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•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
9
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