MITSUBISHI RD09MUP2 User Manual
< Silicon RF Power MOS FET (Discrete) >
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
DESCRIPTION
RD09MUP2 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
FEATURES
•High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 50%min. (520MHz)
•Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in
UHF band mobile radio sets.
INDEX MARK
[Gate]
(b)
8.0+/-0 .2
(3.6)
(d)
(4.5)
0.2+/-0 .05
6.2+/-0.2
4.2+/-0.2
5.6+/-0.2
0.95+/- 0.2
TOP VIEW SIDE VIEW BOTTOM VIEW
DETAI L A
0.7+/-0.1
1.8+/-0.1
SIDE VIEW
DETA IL A
Standoff = max 0.05
7.0+/-0 .2
2.6+/-0 .2
Term inal N o.
(a)Dr ain [ou tput]
(b)So urce [GND ]
(c)Ga te [in put]
(d)So urce
UNIT: mm
NOTE S:
1. ( ) Typic al va lue
RoHS COMPLIANT
RD09MUP2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
(a)
(b)
0.65+/-0.2
(c)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 40 V
VGSS Gate to source voltage Vds=0V -5 to +10 V
ID Drain Current - 4.0 A
Pin Input Power Zg=Zl=50
Pch Channel dissipation Tc=25
°C
Tj Junction Temperature - 150
Tstg Storage temperature - -40 to +125
Rth j-c Thermal resistance Junction to case 1.5
Note: Above parameters are guaranteed independently.
1.6 W
83 W
°C
°C
°C/W
Publication Date : Oct．2011
1
G
SCHEMATIC DRAWING
D
S
< Silicon RF Power MOS FET (Discrete) >
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS
I
DSS
I
GSS
V
TH
Pout Output power 8 9 - W
D
VSWRT Load VSWR tolerance
Note: Above parameters, ratings, limits and conditions are subject to change.
Zero gate voltage drain current VDS=17V, VGS=0V - - 10 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Gate threshold Voltage VDS=12V, IDS=1mA 0.5 - 2.5 V
Drain efficiency
(Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
MIN TYP MAX.
f=520MHz , VDD=7.2V
Pin=0.8W,Idq=1.0A
VDD=9.5V,Po=8W(Pin Control)
f=520MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
50 - - %
No destroy -
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
Coss(pF)
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
60
,,,
50
AMBIENT TEMPERATURE
*PCB: Glass epoxy (Size : 46.4 x40.0mm, t=0.8mm)
Thermal sheet: GELTEC COOH-4000(t=0.5mm)
40
30
20
10
Free Air
On PCB withTermal sheet
andHeat-sink
(Size : 41 x55mm, t=7.2 mm)
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(deg:C.)
Vds-Ids CHARACTERISTICS
9
Ta=+25°C
8
7
6
5
4
Ids(A)
3
2
1
0
0 1 2 3 4 5 6 7 8 9
Vds( V)
Vgs=4.5V
Vgs=4.0V
Vgs=3.5V
Vgs=3.0V
Vgs-Ids CHARACTERISTICS
8
Ta=+25°C
Vds=10V
6
4
GM
Ids(A),GM(S)
2
0
0 1 2 3 4
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
160
Ta=+25°C
140
f=1MHz
120
100
80
Ciss(pF)
60
40
20
0
0 5 10 15 20
Vds(V)
Ids
Publication Date : Oct．2011
Vds V S. Cos s CHARACTERISTICS
160
140
120
100
80
60
40
20
0
0 5 10 15 20
Vds(V)
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
20
18
Ta=+25°C
f=1MHz
16
14
12
10
Crss (pF)
8
6
4
2
0
0 5 10 15 20
Vds(V)
3
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