< Silicon RF Power MOS FET (Discrete) >
RD07MVS2
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
RD07MVS2 is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
This device has an internal monolithic zener
diode from gate to source for ESD protection.
FEATURES
High power gain:
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
OUTLINE DRAWING
6.0+/-0.15
INDEX MARK
(Gate)
4.6+/-0.05
3.3+/-0.05
1
2
3
0.8+/-0.05
(0.25)
2.0+/-0.05
3.5+/-0.05
(0.22) (0.22)
0.2+/-0.05
4.9+/-0.15
0.9+/-0.1
0.2+/-0.05
1.0+/-0.05
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD07MVS2-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot
Marking. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD07MVS2
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V -5/+10 V
Pch Channel dissipation Tc=25
Pin Input Power Zg=Zl=50
ID Drain Current - 3 A
Tch Junction Temperature - 150
Tstg Storage temperature - -40 to +125
Rth j-c Thermal resistance Junction to case 2.5
Note: Above parameters are guaranteed independently.
°C
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS
I
DSS
Zero gate voltage drain current VDS=17V, VGS=0V - - 200 uA
50 W
1.5 W
°C
°C
°C/W
(Tc=25°C, UNLESS OTHERWISE NOTED)
D
G
S
SCHEMATIC DRAWING
LIMITS UNIT
MIN TYP MAX.
I
GSS
V
TH
Pout1 Output power 7 8 - W
D1
Pout2 Output power 7 8 - W
D2
Note : Above parameters , ratings , limits and conditions are subject to change.
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Gate threshold Voltage VDS=12V, IDS=1mA 1.4 1.7 2.4 V
f=175MHz , VDD=7.2V
Drain efficiency
Drain efficiency
Load VSWR tolerance
Load VSWR tolerance
Pin=0.3W,Idq=700mA
f=520MHz , VDD=7.2V
Pin=0.7W,Idq=750mA
VDD=9.2V,Po=7W(Pin Control)
f=175MHz,Idq=700mA,Zg=50
Load VSWR=20:1(All Phase)
VDD=9.2V,Po=7W(Pin Control),
f=520MHz,Idq=750mA,Zg=50
Load VSWR=20:1(All Phase)
,
,
55 60 - %
50 55 - %
No destroy -
No destroy -
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
Ciss(pF)
Coss(pF)
Ids(A),GM(S)
CHANNEL DISSIPATION Pch(W)
RD07MVS2
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
60
...
50
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy( t=0.6mm)
On PCB(*1) withH eat-sink
40
30
On PCB(*1)
withthrogh hole
andHeat-sink
20
10
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(deg:C.)
Vds -Ids CHARACTERISTICS
10
Ta=+25°C
9
8
7
6
5
Ids(A)
4
3
2
1
0
0 2 4 6 8 10
Vds(V)
Vgs=5V
Vgs=4.5V
Vgs=4V
Vgs=3.5V
Vgs=3V
Vgs -Ids CHARACTERISTICS
10.0
Ta=+25°C
Vds=10V
8.0
6.0
4.0
GM
2.0
0.0
0 1 2 3 4 5
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
160
Ta=+25°C
140
f=1MHz
120
100
80
60
40
20
0
0 5 10 15 20
Vds(V)
Ids
Publication Date : Oct．2011
Vds VS. Cos s CHARACTERISTICS
120
Ta=+25°C
f=1MHz
100
80
60
40
20
0
0 5 10 15 20
Vds(V)
Vds VS. Crs s CHARACTERISTICS
20
Ta=+25°C
18
f=1MHz
16
14
12
10
Crss(pF)
8
6
4
2
0
0 5 10 15 20
Vds(V)
3
< Silicon RF Power MOS FET (Discrete) >
RD07MVS2
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
40
30
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=700mA
Gp
Po
η
ｄ
20
10
Po(dBm) , Gp(dB) , Idd(A)
0
-5 0 5 10 15 20 25 30
Pin(dBm)
Pin-Po CHARACTERISTICS @f=520MHz
40
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=750mA
Po
30
20
Gp
10
Po(dBm) , Gp(dB) , Idd(A)
Pin-Po CHARACTERISTICS @f=175MHz
Ｉｄｄ
80
60
40
20
0
12.0
10.0
Po
ηd
8.0
ηd(%)
6.0
4.0
Pout(W) , Idd(A)
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=700mA
Idd
2.0
0.0
100
80
60
ηd(%)
40
20
0 500 1000
Pin(mW)
Pin-Po CHARACTERISTICS @f=520MHz
14.0
80
η
ｄ
60
40
ηd(%)
20
Ｉｄｄ
Pout(W) , Idd(A)
12.0
10.0
8.0
6.0
4.0
2.0
Po
ηd
Idd
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=750mA
100
90
80
70
60
50
40
ηd(%)
0
0 5 10 15 20 25 30
Vdd-Po CHARACTERISTICS
30
Ta=25°C
f=175MHz
25
Pin=0.3W
Icq=700mA
Zg=ZI=50 ohm
20
15
Po(W)
10
5
0
4 6 8 10 12 14
Publication Date : Oct．2011
Pin(dBm)
@f=175MHz
Vdd(V)
0
0.0
30
0.0 0.5 1.0 1.5
Pin(W)
Vdd-Po CHARACTERISTICS
@f=520MHz
6
Po
5
4
Idd
3
Idd(A)
2
1
0
Po(W)
20
17.5
15
12.5
10
7.5
2.5
5
0
Ta=25°C
f=520MHz
Pin=0.7W
Icq=750mA
Zg=ZI=50 ohm
5
Po
4
Idd
3
Idd(A)
2
1
0
4 6 8 10 12 14
Vdd(V)
4
< Silicon RF Power MOS FET (Discrete) >
Vds =10V
RD07MVS2
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
Vgs -Id s CHARACT ERIST ICS 2
10
8
-25°C
Tc=-25~+75°C
+25°C
6
Ids(A)
4
2
0
2 3 4 5
Vgs (V)
+75°C
Publication Date : Oct．2011
5
< Silicon RF Power MOS FET (Discrete) >
RF-in
RD07MVS2
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TEST CIRCUIT(f=175MHz)
Vgg Vdd
C1
4.7K ohm
5mm
RF-in
62pF
19.5m
24.5mm 6.5mm
140pF
L:Enameled wire 7 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
TEST CIRCUIT(f=520MHz)
100pF
19mm
11.5m
680 ohm
180pF
C2 10μF,50V
15mm
RD07MVS2
175MHz
3.5mm 11.5mmL6.5mm
3mm
22pF
22pF
16pF
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
W:line width=1.0mm
28.5mm
56pF
10mm 5mm
62pF
RF-OUT
Vgg
C1
19mm
RD07MVS2
520MHz
68pF
4.7K ohm
46mm
9mm
37pF
3.5mm 3.5mm
10pF
L:Enameled wire 5 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
Vdd
C2 10μF,50V
19mm
3.5mm
20pF
6.5mmL6.5mm
20pF
6pF
44.5mm
18pF
RF-OUT
62pF
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
W:line width=1.0mm
Publication Date : Oct．2011
6
< Silicon RF Power MOS FET (Discrete) >
175MHz Zin* Zout*
Zin*=1.55+j5.53
520MHz Zin* Zout*
Zin*=0.76+j0.06
RD07MVS2
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
Zo=10
175MHz Zin*
175MHz Zout*
Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W
Zout*=3.24-j0.26
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
output impedance
Zo=10
520MHz Zin*
Vdd=7.2V, Idq=750mA(Vgg adj.),Pin=0.7W
Zout*=1.61-j0.52
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
520MHz Zout*
Publication Date : Oct．2011
7
< Silicon RF Power MOS FET (Discrete) >
RD07MSV2 S-PARAMETER DATA (@Vdd=7.2V, Id=750mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
100
0.899
-175.3
5.567
79.3
0.015
-9.4
0.792
-173.5
150
0.903
-177.2
3.576
71.1
0.015
-17.0
0.790
-175.1
175
0.903
-177.7
3.002
68.3
0.014
-18.8
0.799
-174.8
200
0.909
-178.4
2.602
65.1
0.015
-22.7
0.823
-174.7
250
0.911
-179.0
1.987
58.3
0.014
-28.8
0.829
-175.4
300
0.919
-179.6
1.585
53.4
0.012
-32.8
0.842
-175.7
350
0.923
179.7
1.291
47.9
0.012
-37.7
0.866
-176.3
400
0.927
178.9
1.062
43.4
0.011
-39.8
0.864
-176.5
450
0.931
178.5
0.902
39.1
0.010
-38.9
0.887
-177.3
500
0.934
177.8
0.749
35.7
0.009
-40.4
0.896
-177.8
520
0.939
177.6
0.715
33.6
0.008
-43.4
0.895
-177.8
550
0.940
177.3
0.656
31.6
0.008
-41.3
0.901
-178.3
600
0.942
176.8
0.576
29.9
0.007
-52.0
0.916
-179.4
650
0.944
176.2
0.502
26.0
0.007
-45.6
0.914
-179.4
700
0.948
175.6
0.437
24.4
0.006
-52.8
0.925
179.7
750
0.948
175.4
0.393
21.7
0.004
-58.3
0.929
179.3
800
0.950
174.7
0.344
18.8
0.005
-53.1
0.927
178.9
850
0.953
174.3
0.303
17.0
0.004
-51.4
0.937
178.2
900
0.951
174.1
0.279
15.1
0.003
-52.0
0.931
178.2
950
0.954
173.5
0.243
12.6
0.003
-40.6
0.937
177.4
1000
0.954
173.2
0.236
10.9
0.002
-21.3
0.942
177.4
1050
0.956
172.9
0.201
12.4
0.001
-44.2
0.941
177.2
1100
0.956
172.7
0.193
9.8
0.002
-13.4
0.943
176.7
RD07MVS2
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS2 S-PARAMETER DATA ( Vdd=7.2V, Id=750mA)
S11 S21 S12 S22
Publication Date : Oct．2011
8
< Silicon RF Power MOS FET (Discrete) >
have
until cold after switch
his products without cause damage for human and
details
copies of the formal
(RF power transistors) are designed
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
predicted operating life time of
an authorized Mitsubishi
therefore
device is
It is
sink in conjunction with other cooling methods as needed (fan,
lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
the
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
, please refer the last page
RD07MVS2
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
for consumer mobile communication terminals and were not specifically designed for use in
under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.
8.
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
9
< Silicon RF Power MOS FET (Discrete) >
RD07MVS2
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
10
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