MITSUBISHI RD07MVS2 User Manual

< Silicon RF Power MOS FET (Discrete) >

RD07MVS2

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

DESCRIPTION

RD07MVS2 is a MOS FET type transistor

specifically designed for VHF/UHF RF power

amplifiers applications.

This device has an internal monolithic zener

diode from gate to source for ESD protection.

FEATURES

High power gain:

Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz

High Efficiency: 60%typ. (175MHz)

High Efficiency: 55%typ. (520MHz)

Integrated gate protection diode

APPLICATION

For output stage of high power amplifiers

In VHF/UHF band mobile radio sets.

OUTLINE DRAWING

6.0+/-0.15

INDEX MARK

(Gate)

4.6+/-0.05

3.3+/-0.05

1

2

3

0.8+/-0.05

(0.25)

2.0+/-0.05

3.5+/-0.05

(0.22) (0.22)

0.2+/-0.05

4.9+/-0.15

0.9+/-0.1

0.2+/-0.05

1.0+/-0.05

(0.25)

Terminal No.

1.Drain (output)

2.Source (GND)

3.Gate (input)

Note
( ):center value
UNIT:mm

RoHS COMPLIANT

RD07MVS2-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot

Marking. This product includes the lead in high melting temperature type solders.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)

Publication Date : Oct．2011

1

< Silicon RF Power MOS FET (Discrete) >

RD07MVS2

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)

SYMBOL PARAMETER CONDITIONS RATINGS UNIT

VDSS Drain to source voltage Vgs=0V 30 V

VGSS Gate to source voltage Vds=0V -5/+10 V

Pch Channel dissipation Tc=25

Pin Input Power Zg=Zl=50

ID Drain Current - 3 A

Tch Junction Temperature - 150

Tstg Storage temperature - -40 to +125

Rth j-c Thermal resistance Junction to case 2.5

Note: Above parameters are guaranteed independently.

°C



ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS

I

DSS

Zero gate voltage drain current VDS=17V, VGS=0V - - 200 uA

50 W

1.5 W

°C

°C

°C/W

(Tc=25°C, UNLESS OTHERWISE NOTED)

D

G

S

SCHEMATIC DRAWING

LIMITS UNIT

MIN TYP MAX.

I

GSS

V

TH

Pout1 Output power 7 8 - W

D1

Pout2 Output power 7 8 - W

D2

Note : Above parameters , ratings , limits and conditions are subject to change.

Gate to source leak current VGS=10V, VDS=0V - - 1 uA

Gate threshold Voltage VDS=12V, IDS=1mA 1.4 1.7 2.4 V

f=175MHz , VDD=7.2V

Drain efficiency

Drain efficiency

Load VSWR tolerance

Load VSWR tolerance

Pin=0.3W,Idq=700mA

f=520MHz , VDD=7.2V

Pin=0.7W,Idq=750mA

VDD=9.2V,Po=7W(Pin Control)

f=175MHz,Idq=700mA,Zg=50

Load VSWR=20:1(All Phase)

VDD=9.2V,Po=7W(Pin Control),

f=520MHz,Idq=750mA,Zg=50

Load VSWR=20:1(All Phase)

,

,

55 60 - %

50 55 - %

No destroy -

No destroy -

Publication Date : Oct．2011

2

< Silicon RF Power MOS FET (Discrete) >

Ciss(pF)

Coss(pF)

Ids(A),GM(S)

CHANNEL DISSIPATION Pch(W)

RD07MVS2

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

TYPICAL CHARACTERISTICS

CHANNEL DISSIPATION VS.

60

...

50

AMBIENT TEMPERATURE

*1:The material of the PCB

Glass epoxy( t=0.6mm)

On PCB(*1) withH eat-sink

40

30

On PCB(*1)

withthrogh hole

andHeat-sink

20

10

0

0 40 80 120 160 200

AMBIENT TEMPERATURE Ta(deg:C.)

Vds -Ids CHARACTERISTICS

10

Ta=+25°C

9

8

7

6

5

Ids(A)

4

3

2

1

0

0 2 4 6 8 10

Vds(V)

Vgs=5V

Vgs=4.5V

Vgs=4V

Vgs=3.5V

Vgs=3V

Vgs -Ids CHARACTERISTICS

10.0

Ta=+25°C
Vds=10V

8.0

6.0

4.0

GM

2.0

0.0
0 1 2 3 4 5

Vgs(V)

Vds VS. Ciss CHARACTERISTICS

160

Ta=+25°C

140

f=1MHz

120

100

80

60

40

20

0

0 5 10 15 20

Vds(V)

Ids

Publication Date : Oct．2011

Vds VS. Cos s CHARACTERISTICS

120

Ta=+25°C
f=1MHz

100

80

60

40

20

0

0 5 10 15 20

Vds(V)

Vds VS. Crs s CHARACTERISTICS

20

Ta=+25°C

18

f=1MHz

16

14

12

10

Crss(pF)

8

6

4

2

0

0 5 10 15 20

Vds(V)

3