MITSUBISHI RD07MVS1 User Manual
< Silicon RF Power MOS FET (Discrete) >
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
OUTLINE DRAWING
DESCRIPTION
RD07MVS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
6.0+/-0.15
4.9+/-0.15
0.2+/-0.05
1.0+/-0.05
1
2
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
2.0+/-0.05
3.5+/-0.05
FEATURES
High power gain:
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
INDEX MARK
(Gate)
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD07MVS1-101, T112 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
3
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
0.9+/-0.1
0.2+/-0.05
Note
( ):center value
UNIT:mm
(0.25)
(0.22) (0.22)
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/- 20 V
Pch Channel dissipation Tc=25
Pin Input Power Zg=Zl=50
ID Drain Current - 3 A
Tch Junction Temperature - 150
Tstg Storage temperature - -40 to +125
Rth j-c Thermal resistance Junction to case 2.5
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS
I
DSS
I
GSS
V
Zero gate voltage drain current VDS=17V, VGS=0V - - 200 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Gate threshold Voltage VDS=12V, IDS=1mA 1.4 1.7 2.4 V
TH
°C
(Tc=25°C, UNLESS OTHERWISE NOTED)
MIN TYP MAX.
50 W
1.5 W
°C
°C
°C/W
LIMITS UNIT
Pout1 Output power 7 8 - W
D1
Pout2 Output power 7 8 - W
D2
Note: Above parameters, ratings, limits and conditions are subject to change.
Publication Date : Oct．2011
Drain efficiency
Drain efficiency
Load VSWR tolerance
Load VSWR tolerance
f=175MHz , VDD=7.2V
Pin=0.3W,Idq=700mA
f=520MHz , VDD=7.2V
Pin=0.7W,Idq=750mA
VDD=9.2V,Po=7W(Pin Control)
f=175MHz,Idq=700mA,Zg=50
Load VSWR=20:1(All Phase)
VDD=9.2V,Po=7W(Pin Control)
f=520MHz,Idq=750mA,Zg=50
Load VSWR=20:1(All Phase)
2
55 60 - %
50 55 - %
No destroy -
No destroy -
< Silicon RF Power MOS FET (Discrete) >
Ids(A),GM(S)
CHANNEL DISSIPATION Pch(W)
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
60
...
50
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy(t= 0.6mm)
On PCB(*1) with Heat-sink
40
30
On PCB(*1)
withthrogh hole
and Heat-sink
20
10
0
0 40 80 120 160 200
AMBIENT TEMPERATURETa(deg:C.)
Vds -Ids CHARACTERISTICS
10
Ta=+25°C
9
8
7
6
5
Ids(A)
4
3
2
1
0
0 2 4 6 8 10
Vds(V)
Vgs=5V
Vgs=4.5V
Vgs=4V
Vgs=3.5V
Vgs=3V
Vgs -Ids CHARACTERISTICS
10.0
Ta=+25°C
Vds=10V
8.0
6.0
4.0
GM
2.0
0.0
0 1 2 3 4 5
Vgs(V)
Vds V S. Ciss CHARACTERISTICS
160
Ta=+25°C
140
f=1MHz
120
100
80
Ciss(pF)
60
40
20
0
0 5 10 15 20
Vds(V)
Ids
Publication Date : Oct．2011
Vds VS. Coss CHARACTERISTICS
120
Ta=+25°C
f=1MHz
100
80
60
Coss( pF)
40
20
0
0 5 10 15 20
Vds(V)
Vds V S. Crs s CHARACTERISTICS
20
Ta=+25°C
18
f=1MHz
16
14
12
10
Crss(pF)
8
6
4
2
0
0 5 10 15 20
Vds(V)
3
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