MITSUBISHI RD07MUS2B APPLICATION NOTE
Silicon RF Power Semiconductors
SUBJECT: RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
SUMMARY:
APPLICATION NOTE
Document NO. AN-900-039-A
Date : 10th Oct. ‘08
th
Rev.date : 30
Prepared : Y.Takase
S.Kametani
Confirmed :T.Okawa
This application note shows the RF wide band characteristics data
(Frequency characteristics, Pout vs. Pin characteristics) at 763 to 870 MHz band.
- Sample history :
Jun. 2010
RD07MUS2B: Lot number “084YH-G”
- Evaluate conditions :
RD07MUS2B @f=763 to 870MHz : Vds=7.2V, Idq=250mA (Vgs adjust)
- Results :
Page 2-7. shows the typical RF characteristics (Frequency characteristics) data.
Page 8-14. shows the typical RF characteristics (Pout vs. Pin characteristics) data.
Page 15. shows the equivalent circuit.
Application Note for Silicon RF Power Semiconductors
1/15
RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
RD07MUS2B single-stage amplifier Frequency characteristics 1-1
- AN-900-039-A -
@ Vdd=7.2V, Idq=250mA, Po=3.8W (35.8dBm ; ANT 3W + 1dB Condition)
20
16
12
8
Gp(dB), Ids (A)
4
0
ηdGp
P.A.E.
Ids
760 780 800 820 840 860 880 900 920 940
60
55
50
45
ηd(%), P.A.E.(%)
40
35
Vds f Pi Pi Gp Ids ηdP.A.E.
(V) (MHz) (W) (dBm) (dB) (A) (%) (%)
7.2 760 0.252 24.0 11.8 1.28 41.4 38.7
763 0.244 23.9 11.9 1.26 42.1 39.4
770 0.222 23.5 12.3 1.22 43.2 40.7
780 0.193 22.9 13.0 1.18 44.7 42.5
790 0.170 22.3 13.5 1.15 45.8 43.8
800 0.149 21.7 14.1 1.13 46.8 44.9
806 0.137 21.4 14.4 1.11 47.4 45.7
810 0.130 21.1 14.7 1.11 47.7 46.1
817 0.120 20.8 15.0 1.10 47.9 46.4
820 0.116 20.6 15.2 1.10 48.1 46.6
830 0.102 20.1 15.7 1.08 48.8 47.5
840 0.091 19.6 16.2 1.07 49.4 48.2
850 0.084 19.3 16.5 1.06 49.8 48.7
860 0.083 19.2 16.6 1.06 50.2 49.1
870 0.089 19.5 16.3 1.05 50.4 49.3
880 0.103 20.1 15.7 1.05 50.4 49.0
890 0.124 20.9 14.9 1.06 50.0 48.4
900 0.158 22.0 13.8 1.06 49.8 47.7
910 0.201 23.0 12.8 1.06 49.9 47.2
920 0.266 24.3 11.6 1.06 49.7 46.2
930 0.351 25.5 10.3 1.05 50.1 45.5
940 0.489 26.9 8.9 1.05 50.5 44.0
941 0.502 27.0 8.8 1.04 50.7 44.0
950 0.749 28.7 7.1 1.04 50.8 40.8
f (MHz)
Application Note for Silicon RF Power Semiconductors
2/15
RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
RD07MUS2B single-stage amplifier Frequency characteristics 1-2
- AN-900-039-A -
@ Vdd=7.2V, Idq=250mA, Po=5W (37dBm)
20
Gp
16
12
8
Gp(dB), Ids (A)
Ids
4
0
760 780 800 820 840 860 880 900 920 940
ηd
60
P.A.E.
55
50
45
ηd(%), P.A.E.(%)
40
35
Vds f Pi Pi Gp Ids ηd P.A.E.
(V) (MHz) (W) (dBm) (dB) (A) (%) (%)
7.2 760 0.342 25.3 11.7 1.48 47.1 43.9
763 0.329 25.2 11.8 1.46 47.8 44.6
770 0.300 24.8 12.2 1.42 49.0 46.1
780 0.265 24.2 12.8 1.37 50.7 48.0
790 0.235 23.7 13.3 1.34 51.8 49.3
800 0.209 23.2 13.8 1.32 52.7 50.5
806 0.195 22.9 14.1 1.30 53.4 51.3
810 0.183 22.6 14.4 1.29 53.6 51.6
817 0.171 22.3 14.7 1.29 53.7 51.9
820 0.164 22.2 14.8 1.29 53.9 52.1
830 0.148 21.7 15.3 1.28 54.4 52.8
840 0.135 21.3 15.7 1.27 54.8 53.3
850 0.128 21.1 15.9 1.26 55.2 53.8
860 0.131 21.2 15.8 1.26 55.2 53.8
870 0.144 21.6 15.4 1.26 55.3 53.7
880 0.175 22.4 14.6 1.26 55.0 53.1
890 0.222 23.5 13.5 1.27 54.7 52.2
900 0.293 24.7 12.3 1.28 54.2 51.0
910 0.384 25.8 11.2 1.28 54.2 50.0
920 0.533 27.3 9.7 1.29 53.7 48.0
930 0.756 28.8 8.2 1.29 53.8 45.7
f (MHz)
Application Note for Silicon RF Power Semiconductors
3/15
RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
f
RD07MUS2B single-stage amplifier Frequency characteristics 2-1
- AN-900-039-A -
@ Vdd=7.2V, Idq=250mA, Pi=0.5W (27dBm)
12
Gp ηd P.A.E.
10
8
6
Po
4
Po(W), Gp(dB), Ids (A)
2
0
760 780 800 820 840 860 880 900 920 940
Ids
65
60
55
50
45
ηd(%), P.A.E.(%)
40
35
Vds
(V) (MHz) (W) (dBm) (dB) (A) (%) (%)
7.2 760 6.54 38.2 11.1 1.71 53.1 49.0
770 6.8738.411.41.6956.552.4
780 7.1338.511.51.6958.454.3
790 7.2738.611.61.6959.955.7
800 7.4138.711.71.6960.856.7
810 7.4938.711.81.7061.357.2
820 7.5538.811.81.7161.557.4
830 7.5938.811.81.7161.757.6
840 7.5638.811.81.7261.257.1
850 7.4638.711.71.7160.756.6
860 7.2838.611.61.6960.055.9
870 7.0838.511.51.6659.154.9
880 6.8238.311.31.6358.053.8
890 6.5038.111.11.5857.252.8
900 6.1537.910.91.5256.051.5
910 5.7737.610.61.4555.150.3
920 5.3237.310.31.3654.249.1
930 4.82 36.8 9.8 1.26 53.2 47.6
940 4.25 36.3 9.3 1.13 52.3 46.1
950 3.62 35.6 8.6 1.00 50.2 43.3
Po Po Gp Ids ηd P.A.E.
f (MHz)
Application Note for Silicon RF Power Semiconductors
4/15
RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
RD07MUS2B single-stage amplifier Frequency characteristics 2-2
- AN-900-039-A -
@ Vdd=7.2V, Idq=250mA, Pi=0.63W (28dBm)
12
Gp ηd P.A.E.
10
8
6
Po
4
Po(W), Gp(dB), Ids (A)
2
0
760 780 800 820 840 860 880 900 920 940
Ids
65
60
55
50
45
ηd(%), P.A.E.(%)
40
35
Vds f Po Po Gp Ids ηd P.A.E.
(V) (MHz) (W) (dBm) (dB) (A) (%) (%)
7.2 760 7.38 38.7 10.6 1.84 55.7 50.9
770 7.62 38.8 10.8 1.81 58.3 53.5
780 7.73 38.9 10.9 1.78 60.4 55.4
790 7.82 38.9 10.9 1.77 61.2 56.2
800 7.88 39.0 10.9 1.77 61.9 56.9
810 7.91 39.0 11.0 1.77 62.1 57.1
820 7.93 39.0 11.0 1.77 62.1 57.1
830 7.92 39.0 11.0 1.77 62.1 57.1
840 7.85 38.9 11.0 1.77 61.5 56.6
850 7.73 38.9 10.9 1.76 61.0 56.0
860 7.54 38.8 10.8 1.74 60.3 55.2
870 7.33 38.6 10.6 1.72 59.2 54.1
880 7.06 38.5 10.5 1.68 58.2 53.0
890 6.74 38.3 10.3 1.64 57.1 51.8
900 6.42 38.1 10.0 1.59 56.2 50.6
910 6.04 37.8 9.8 1.51 55.4 49.6
920 5.61 37.5 9.5 1.43 54.5 48.4
930 5.12 37.1 9.1 1.32 53.7 47.1
940 4.55 36.6 8.6 1.20 52.5 45.3
950 3.91 35.9 7.9 1.06 51.3 43.0
f (MHz)
Application Note for Silicon RF Power Semiconductors
5/15
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