MITSUBISHI RD07MUS2B APPLICATION NOTE

Silicon RF Power Semiconductors

SUBJECT: RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

SUMMARY:

APPLICATION NOTE

Document NO. AN-900-039-A

Date : 10th Oct. ‘08

th

Rev.date : 30

Prepared : Y.Takase

S.Kametani

Confirmed :T.Okawa

This application note shows the RF wide band characteristics data

(Frequency characteristics, Pout vs. Pin characteristics) at 763 to 870 MHz band.

- Sample history :

Jun. 2010

RD07MUS2B: Lot number “084YH-G”

- Evaluate conditions :

RD07MUS2B @f=763 to 870MHz : Vds=7.2V, Idq=250mA (Vgs adjust)

- Results :

Page 2-7. shows the typical RF characteristics (Frequency characteristics) data.

Page 8-14. shows the typical RF characteristics (Pout vs. Pin characteristics) data.

Page 15. shows the equivalent circuit.

Application Note for Silicon RF Power Semiconductors

1/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

RD07MUS2B single-stage amplifier Frequency characteristics 1-1

- AN-900-039-A -

@ Vdd=7.2V, Idq=250mA, Po=3.8W (35.8dBm ; ANT 3W + 1dB Condition)

20

16

12

8

Gp(dB), Ids (A)

4

0

ηdGp

P.A.E.

Ids

760 780 800 820 840 860 880 900 920 940

60

55

50

45

ηd(%), P.A.E.(%)

40

35

Vds f Pi Pi Gp Ids ηdP.A.E.

(V) (MHz) (W) (dBm) (dB) (A) (%) (%)

7.2 760 0.252 24.0 11.8 1.28 41.4 38.7
763 0.244 23.9 11.9 1.26 42.1 39.4
770 0.222 23.5 12.3 1.22 43.2 40.7
780 0.193 22.9 13.0 1.18 44.7 42.5
790 0.170 22.3 13.5 1.15 45.8 43.8
800 0.149 21.7 14.1 1.13 46.8 44.9
806 0.137 21.4 14.4 1.11 47.4 45.7
810 0.130 21.1 14.7 1.11 47.7 46.1
817 0.120 20.8 15.0 1.10 47.9 46.4
820 0.116 20.6 15.2 1.10 48.1 46.6
830 0.102 20.1 15.7 1.08 48.8 47.5
840 0.091 19.6 16.2 1.07 49.4 48.2
850 0.084 19.3 16.5 1.06 49.8 48.7
860 0.083 19.2 16.6 1.06 50.2 49.1
870 0.089 19.5 16.3 1.05 50.4 49.3
880 0.103 20.1 15.7 1.05 50.4 49.0
890 0.124 20.9 14.9 1.06 50.0 48.4
900 0.158 22.0 13.8 1.06 49.8 47.7
910 0.201 23.0 12.8 1.06 49.9 47.2
920 0.266 24.3 11.6 1.06 49.7 46.2
930 0.351 25.5 10.3 1.05 50.1 45.5
940 0.489 26.9 8.9 1.05 50.5 44.0
941 0.502 27.0 8.8 1.04 50.7 44.0
950 0.749 28.7 7.1 1.04 50.8 40.8

f (MHz)

Application Note for Silicon RF Power Semiconductors

2/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

RD07MUS2B single-stage amplifier Frequency characteristics 1-2

- AN-900-039-A -

@ Vdd=7.2V, Idq=250mA, Po=5W (37dBm)

20

Gp

16

12

8

Gp(dB), Ids (A)

Ids

4

0

760 780 800 820 840 860 880 900 920 940

ηd

60

P.A.E.

55

50

45

ηd(%), P.A.E.(%)

40

35

Vds f Pi Pi Gp Ids ηd P.A.E.

(V) (MHz) (W) (dBm) (dB) (A) (%) (%)

7.2 760 0.342 25.3 11.7 1.48 47.1 43.9
763 0.329 25.2 11.8 1.46 47.8 44.6
770 0.300 24.8 12.2 1.42 49.0 46.1
780 0.265 24.2 12.8 1.37 50.7 48.0
790 0.235 23.7 13.3 1.34 51.8 49.3
800 0.209 23.2 13.8 1.32 52.7 50.5
806 0.195 22.9 14.1 1.30 53.4 51.3
810 0.183 22.6 14.4 1.29 53.6 51.6
817 0.171 22.3 14.7 1.29 53.7 51.9
820 0.164 22.2 14.8 1.29 53.9 52.1
830 0.148 21.7 15.3 1.28 54.4 52.8
840 0.135 21.3 15.7 1.27 54.8 53.3
850 0.128 21.1 15.9 1.26 55.2 53.8
860 0.131 21.2 15.8 1.26 55.2 53.8
870 0.144 21.6 15.4 1.26 55.3 53.7
880 0.175 22.4 14.6 1.26 55.0 53.1
890 0.222 23.5 13.5 1.27 54.7 52.2
900 0.293 24.7 12.3 1.28 54.2 51.0
910 0.384 25.8 11.2 1.28 54.2 50.0
920 0.533 27.3 9.7 1.29 53.7 48.0
930 0.756 28.8 8.2 1.29 53.8 45.7

f (MHz)

Application Note for Silicon RF Power Semiconductors

3/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

f

RD07MUS2B single-stage amplifier Frequency characteristics 2-1

- AN-900-039-A -

@ Vdd=7.2V, Idq=250mA, Pi=0.5W (27dBm)

12

Gp ηd P.A.E.

10

8

6

Po

4

Po(W), Gp(dB), Ids (A)

2

0

760 780 800 820 840 860 880 900 920 940

Ids

65

60

55

50

45

ηd(%), P.A.E.(%)

40

35

Vds

(V) (MHz) (W) (dBm) (dB) (A) (%) (%)

7.2 760 6.54 38.2 11.1 1.71 53.1 49.0
770 6.8738.411.41.6956.552.4
780 7.1338.511.51.6958.454.3
790 7.2738.611.61.6959.955.7
800 7.4138.711.71.6960.856.7
810 7.4938.711.81.7061.357.2
820 7.5538.811.81.7161.557.4
830 7.5938.811.81.7161.757.6
840 7.5638.811.81.7261.257.1
850 7.4638.711.71.7160.756.6
860 7.2838.611.61.6960.055.9
870 7.0838.511.51.6659.154.9
880 6.8238.311.31.6358.053.8
890 6.5038.111.11.5857.252.8
900 6.1537.910.91.5256.051.5
910 5.7737.610.61.4555.150.3
920 5.3237.310.31.3654.249.1
930 4.82 36.8 9.8 1.26 53.2 47.6
940 4.25 36.3 9.3 1.13 52.3 46.1
950 3.62 35.6 8.6 1.00 50.2 43.3

Po Po Gp Ids ηd P.A.E.

f (MHz)

Application Note for Silicon RF Power Semiconductors

4/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

RD07MUS2B single-stage amplifier Frequency characteristics 2-2

- AN-900-039-A -

@ Vdd=7.2V, Idq=250mA, Pi=0.63W (28dBm)

12

Gp ηd P.A.E.

10

8

6

Po

4

Po(W), Gp(dB), Ids (A)

2

0

760 780 800 820 840 860 880 900 920 940

Ids

65

60

55

50

45

ηd(%), P.A.E.(%)

40

35

Vds f Po Po Gp Ids ηd P.A.E.

(V) (MHz) (W) (dBm) (dB) (A) (%) (%)

7.2 760 7.38 38.7 10.6 1.84 55.7 50.9
770 7.62 38.8 10.8 1.81 58.3 53.5
780 7.73 38.9 10.9 1.78 60.4 55.4
790 7.82 38.9 10.9 1.77 61.2 56.2
800 7.88 39.0 10.9 1.77 61.9 56.9
810 7.91 39.0 11.0 1.77 62.1 57.1
820 7.93 39.0 11.0 1.77 62.1 57.1
830 7.92 39.0 11.0 1.77 62.1 57.1
840 7.85 38.9 11.0 1.77 61.5 56.6
850 7.73 38.9 10.9 1.76 61.0 56.0
860 7.54 38.8 10.8 1.74 60.3 55.2
870 7.33 38.6 10.6 1.72 59.2 54.1
880 7.06 38.5 10.5 1.68 58.2 53.0
890 6.74 38.3 10.3 1.64 57.1 51.8
900 6.42 38.1 10.0 1.59 56.2 50.6
910 6.04 37.8 9.8 1.51 55.4 49.6
920 5.61 37.5 9.5 1.43 54.5 48.4
930 5.12 37.1 9.1 1.32 53.7 47.1
940 4.55 36.6 8.6 1.20 52.5 45.3
950 3.91 35.9 7.9 1.06 51.3 43.0

f (MHz)

Application Note for Silicon RF Power Semiconductors

5/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

f

RD07MUS2B single-stage amplifier Frequency characteristics 2-3

- AN-900-039-A -

@ Vdd=7.2V, Idq=250mA, Pi=0.8W (29dBm)

12

Gp ηd P.A.E.

10

8

6

4

Po(W), Gp(dB), Ids (A)

2

0

Po

760 780 800 820 840 860 880 900 920 940

Ids

65

60

55

50

45

ηd(%), P.A.E.(%)

40

35

Vds

(V) (MHz) (W) (dBm) (dB) (A) (%) (%)

7.2 760 8.13 39.1 10.1 1.95 57.9 52.2
770 8.25 39.2 10.1 1.91 60.1 54.3
780 8.29 39.2 10.2 1.87 61.5 55.6
790 8.28 39.2 10.2 1.85 62.3 56.4
800 8.29 39.2 10.2 1.83 63.0 56.9
810 8.27 39.2 10.2 1.83 62.8 56.7
820 8.26 39.2 10.1 1.83 62.7 56.6
830 8.22 39.1 10.1 1.83 62.4 56.4
840 8.14 39.1 10.1 1.82 62.2 56.1
850 7.98 39.0 10.0 1.81 61.3 55.2
860 7.80 38.9 9.9 1.79 60.6 54.4
870 7.56 38.8 9.8 1.76 59.5 53.2
880 7.26 38.6 9.6 1.73 58.3 51.9
890 6.95 38.4 9.4 1.68 57.4 50.8
900 6.64 38.2 9.2 1.64 56.4 49.6
910 6.29 38.0 9.0 1.57 55.6 48.5
920 5.88 37.7 8.7 1.49 54.8 47.4
930 5.39 37.3 8.3 1.39 54.1 46.0
940 4.81 36.8 7.8 1.26 53.1 44.4
950 4.18 36.2 7.2 1.12 51.7 41.9

Po Po Gp Ids ηd P.A.E.

f (MHz)

Application Note for Silicon RF Power Semiconductors

6/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

f

RD07MUS2B single-stage amplifier Frequency characteristics 2-4

- AN-900-039-A -

@ Vdd=7.2V, Idq=250mA, Pi=1W (30dBm)

12

Gp ηd P.A.E.

10

8

6

4

Po(W), Gp(dB), Ids (A)

2

0

Po

760 780 800 820 840 860 880 900 920 940

Ids

65

60

55

50

45

ηd(%), P.A.E.(%)

40

35

Vds

(V) (MHz) (W) (dBm) (dB) (A) (%) (%)

7.2 760 8.81 39.4 9.4 2.05 59.6 52.8
770 8.82 39.5 9.4 1.99 61.4 54.4
780 8.78 39.4 9.4 1.94 62.8 55.6
790 8.73 39.4 9.4 1.92 63.2 55.9
800 8.68 39.4 9.3 1.90 63.4 56.0
810 8.61 39.3 9.3 1.89 63.3 56.0
820 8.56 39.3 9.3 1.88 63.3 55.9
830 8.49 39.3 9.3 1.88 62.8 55.3
840 8.39 39.2 9.2 1.87 62.3 54.8
850 8.22 39.1 9.1 1.85 61.6 54.1
860 8.01 39.0 9.0 1.83 60.8 53.1
870 7.76 38.9 8.9 1.80 59.8 52.1
880 7.49 38.7 8.7 1.77 58.7 50.8
890 7.17 38.6 8.6 1.73 57.5 49.5
900 6.87 38.4 8.4 1.69 56.6 48.3
910 6.53 38.1 8.2 1.63 55.8 47.2
920 6.13 37.9 7.9 1.55 55.1 46.1
930 5.66 37.5 7.5 1.44 54.4 44.7
940 5.08 37.1 7.1 1.32 53.4 42.9
950 4.42 36.5 6.4 1.18 52.1 40.3

Po Po Gp Ids ηd P.A.E.

f (MHz)

Application Note for Silicon RF Power Semiconductors

7/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-039-A -

RD07MUS2B single-stage amplifier Pout vs. Pin characteristics 1-1

@ Vdd=7.2V, Idq=250mA, f=763MHz, 817MHz, 870MHz

10

817MHz

8

6

Po (W)

4

763MHz

2

0

0.000 0.200 0.400 0.600 0.800 1.000

Pi (W)

870MHz

20

817MHz

870MHz

15

10

Gp (dB)

763MHz

5

0

0 5 10 15 20 25 30

Pi (dBm)

40

30

20

Po (dBm)

10

0

0 5 10 15 20 25 30

2.5

2.0

1.5

Ids (A)

1.0

0.5

0.0

0 5 10 15 20 25 30

870MHz

817MHz

763MHz

Pi (dBm )

870MHz

Pi (dBm)

817MHz

763MHz

70

60

50

40

870MHz

817MHz

70

60

50

40

870MHz

817MHz

30

P.A.E.(%)

20

10

0

0 5 10 15 20 25 30

Pi (dBm)

763MHz

ηd(%)

30

20

10

0

0 5 10 15 20 25 30

Pi (dBm )

763MHz

Application Note for Silicon RF Power Semiconductors

8/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-039-A -

RD07MUS2B single-stage amplifier Pout vs. Pin characteristics 1-2

@ Vdd=7.2V, Idq=250mA, f=806MHz, 870MHz, 941MHz

10

870MHz

8

6

806MHz

Po (W)

4

2

0

0.000 0.200 0.400 0.600 0.800 1.000

Pi (W)

941MHz

20

15

806MHz

870MHz

10

Gp (d B)

5

941MHz

0

0 5 10 15 20 25 30

Pi (dBm )

40

870MHz

30

20

Po (dBm)

10

0

0 5 10 15 20 25 30

2.5

2.0

1.5

Ids (A)

1.0

0.5

0.0

0 5 10 15 20 25 30

806MHz

Pi (dBm )

870MHz

806MHz

Pi (dBm )

941MHz

941MHz

70

60

50

870MHz

70

60

50

870MHz

40

30

P.A.E.(%)

20

10

0

0 5 10 15 20 25 30

806MHz

941MHz

Pi (dBm )

40

ηd(%)

30

20

10

0

0 5 10 15 20 25 30

806MHz

Pi (dBm )

941MHz

Application Note for Silicon RF Power Semiconductors

9/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-039-A -

RD07MUS2B single-stage amplifier Pout vs. Pin characteristics data

@ f=763MHz

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.51 0.001 0.0 0.014 11.3 11.3 0.27 0.7 0.6

7.51 0.001 1.0 0.017 12.3 11.3 0.27 0.8 0.8

7.50 0.002 2.0 0.021 13.2 11.2 0.27 1.0 1.0

7.50 0.002 3.0 0.026 14.2 11.2 0.27 1.3 1.2

7.51 0.003 4.0 0.033 15.2 11.2 0.27 1.6 1.5

7.51 0.003 5.0 0.042 16.2 11.2 0.28 2.0 1.9

7.50 0.004 6.0 0.053 17.2 11.2 0.28 2.5 2.3

7.50 0.005 7.0 0.066 18.2 11.2 0.29 3.0 2.8

7.50 0.006 8.0 0.084 19.2 11.2 0.30 3.7 3.4

7.50 0.008 9.0 0.106 20.3 11.3 0.32 4.5 4.1

7.50 0.010 10.0 0.134 21.3 11.3 0.33 5.4 5.0

7.49 0.013 11.0 0.169 22.3 11.3 0.35 6.5 6.0

7.48 0.016 12.0 0.215 23.3 11.3 0.37 7.7 7.1

7.48 0.020 13.0 0.272 24.3 11.4 0.40 9.1 8.4

7.47 0.025 14.0 0.346 25.4 11.4 0.43 10.7 9.9

7.47 0.031 15.0 0.440 26.4 11.4 0.47 12.4 11.5

7.46 0.040 16.0 0.561 27.5 11.5 0.52 14.4 13.4

7.44 0.050 17.0 0.718 28.6 11.6 0.58 16.7 15.5

7.43 0.063 18.0 0.916 29.6 11.6 0.64 19.2 17.9

7.42 0.079 19.0 1.170 30.7 11.7 0.72 22.0 20.5

7.40 0.100 20.0 1.499 31.8 11.8 0.80 25.3 23.6

7.38 0.126 21.0 1.919 32.8 11.8 0.90 28.9 27.0

7.36 0.158 22.0 2.440 33.9 11.9 1.01 32.8 30.7

7.33 0.200 23.0 3.103 34.9 11.9 1.14 37.3 34.9

7.30 0.251 24.0 3.905 35.9 11.9 1.27 42.0 39.3

7.27 0.315 25.0 4.787 36.8 11.8 1.42 46.4 43.3

7.24 0.397 26.0 5.704 37.6 11.6 1.57 50.3 46.8

7.21 0.501 27.0 6.570 38.2 11.2 1.70 53.6 49.5

7.19 0.632 28.0 7.365 38.7 10.7 1.82 56.2 51.4

7.17 0.795 29.0 8.057 39.1 10.1 1.93 58.3 52.6

7.15 1.007 30.0 8.688 39.4 9.4 2.02 60.1 53.1

, Idq=250mA

Application Note for Silicon RF Power Semiconductors

10/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-039-A -

@ f=806MHz

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

, Idq=250mA

7.47 0.001 0.0 0.025 13.9 13.9 0.27 1.2 1.2

7.47 0.001 1.0 0.031 14.9 13.9 0.28 1.5 1.4

7.47 0.002 2.0 0.039 15.9 13.9 0.28 1.9 1.8

7.46 0.002 3.0 0.049 16.9 13.9 0.28 2.3 2.2

7.46 0.003 4.0 0.062 17.9 13.9 0.29 2.8 2.7

7.46 0.003 5.0 0.078 18.9 13.9 0.30 3.5 3.4

7.46 0.004 6.0 0.099 19.9 13.9 0.31 4.3 4.1

7.46 0.005 7.0 0.125 21.0 14.0 0.32 5.3 5.1

7.46 0.006 8.0 0.157 22.0 14.0 0.33 6.4 6.1

7.45 0.008 9.0 0.198 23.0 14.0 0.35 7.7 7.4

7.45 0.010 10.0 0.253 24.0 14.1 0.37 9.2 8.9

7.45 0.012 11.0 0.320 25.1 14.1 0.39 11.0 10.6

7.44 0.016 12.0 0.402 26.0 14.1 0.42 12.8 12.3

7.43 0.020 13.0 0.511 27.1 14.1 0.46 15.1 14.5

7.42 0.025 14.0 0.654 28.2 14.2 0.50 17.6 17.0

7.41 0.031 15.0 0.821 29.1 14.2 0.55 20.2 19.4

7.40 0.040 16.0 1.055 30.2 14.3 0.61 23.4 22.5

7.39 0.050 17.0 1.342 31.3 14.3 0.68 26.8 25.8

7.38 0.063 18.0 1.715 32.3 14.4 0.75 30.8 29.7

7.36 0.079 19.0 2.180 33.4 14.4 0.84 35.1 33.8

7.34 0.099 20.0 2.751 34.4 14.4 0.95 39.6 38.2

7.32 0.125 21.0 3.446 35.4 14.4 1.06 44.4 42.8

7.30 0.157 22.0 4.237 36.3 14.3 1.18 49.0 47.2

7.27 0.198 23.0 5.040 37.0 14.1 1.31 53.1 51.0

7.25 0.249 24.0 5.766 37.6 13.7 1.42 56.1 53.6

7.24 0.311 24.9 6.382 38.0 13.1 1.52 58.1 55.3

7.22 0.391 25.9 6.922 38.4 12.5 1.61 59.7 56.3

7.20 0.493 26.9 7.404 38.7 11.8 1.68 61.1 57.0

7.19 0.621 27.9 7.830 38.9 11.0 1.76 62.1 57.1

7.18 0.780 28.9 8.193 39.1 10.2 1.82 62.8 56.8

7.16 0.984 29.9 8.523 39.3 9.4 1.88 63.5 56.1

Application Note for Silicon RF Power Semiconductors

11/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-039-A -

@ f=817MHz

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.40 0.001 0.0 0.029 14.6 14.6 0.27 1.5 1.4

7.40 0.001 1.0 0.036 15.6 14.6 0.27 1.8 1.8

7.40 0.002 2.0 0.046 16.6 14.6 0.28 2.3 2.2

7.40 0.002 3.0 0.058 17.6 14.6 0.28 2.8 2.7

7.40 0.003 4.0 0.073 18.6 14.6 0.29 3.4 3.3

7.40 0.003 5.0 0.092 19.6 14.6 0.30 4.2 4.1

7.40 0.004 6.0 0.116 20.7 14.6 0.31 5.1 5.0

7.40 0.005 7.0 0.147 21.7 14.6 0.32 6.2 6.0

7.40 0.006 8.0 0.184 22.6 14.7 0.33 7.5 7.2

7.39 0.008 9.0 0.233 23.7 14.7 0.35 8.9 8.6

7.39 0.010 10.0 0.296 24.7 14.7 0.38 10.6 10.3

7.38 0.013 11.0 0.373 25.7 14.7 0.40 12.5 12.1

7.38 0.016 12.0 0.475 26.8 14.8 0.44 14.7 14.2

7.38 0.020 13.0 0.601 27.8 14.8 0.48 17.1 16.5

7.37 0.025 14.0 0.766 28.8 14.9 0.53 19.8 19.1

7.36 0.032 15.0 0.982 29.9 14.9 0.58 22.9 22.2

7.35 0.040 16.0 1.248 31.0 15.0 0.65 26.3 25.4

7.34 0.050 17.0 1.593 32.0 15.0 0.72 30.1 29.2

7.33 0.063 18.0 2.018 33.1 15.1 0.80 34.2 33.1

7.31 0.079 19.0 2.556 34.1 15.1 0.90 38.8 37.6

7.30 0.100 20.0 3.238 35.1 15.1 1.01 43.8 42.4

7.28 0.126 21.0 3.993 36.0 15.0 1.13 48.4 46.9

7.26 0.158 22.0 4.733 36.8 14.8 1.25 52.1 50.4

7.24 0.199 23.0 5.436 37.4 14.4 1.36 55.1 53.1

7.23 0.251 24.0 6.057 37.8 13.8 1.46 57.3 54.9

7.21 0.314 25.0 6.582 38.2 13.2 1.55 58.9 56.1

7.20 0.395 26.0 7.048 38.5 12.5 1.63 60.1 56.8

7.19 0.497 27.0 7.454 38.7 11.8 1.70 61.0 56.9

7.18 0.626 28.0 7.815 38.9 11.0 1.76 61.7 56.8

7.17 0.786 29.0 8.125 39.1 10.1 1.82 62.2 56.2

7.16 0.990 30.0 8.416 39.3 9.3 1.87 62.7 55.4

, Idq=250mA

Application Note for Silicon RF Power Semiconductors

12/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-039-A -

@ f=870MHz

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.40 0.001 0.0 0.048 16.8 16.8 0.28 2.3 2.3

7.40 0.001 1.0 0.060 17.8 16.8 0.28 2.9 2.8

7.40 0.002 2.0 0.076 18.8 16.8 0.29 3.6 3.5

7.40 0.002 3.0 0.095 19.8 16.8 0.30 4.4 4.3

7.40 0.003 4.0 0.120 20.8 16.8 0.30 5.3 5.2

7.40 0.003 5.0 0.152 21.8 16.8 0.32 6.5 6.4

7.39 0.004 6.0 0.191 22.8 16.8 0.33 7.9 7.7

7.39 0.005 7.0 0.242 23.8 16.8 0.35 9.4 9.2

7.39 0.006 8.0 0.304 24.8 16.8 0.37 11.2 11.0

7.38 0.008 9.0 0.384 25.8 16.8 0.39 13.3 13.0

7.38 0.010 10.0 0.487 26.9 16.8 0.42 15.6 15.3

7.37 0.013 11.0 0.613 27.9 16.9 0.46 18.2 17.8

7.37 0.016 12.0 0.775 28.9 16.9 0.50 21.0 20.6

7.36 0.020 13.0 0.976 29.9 16.9 0.55 24.2 23.7

7.35 0.025 14.0 1.234 30.9 16.9 0.61 27.7 27.1

7.35 0.032 15.0 1.553 31.9 16.9 0.67 31.5 30.9

7.34 0.040 16.0 1.954 32.9 16.9 0.75 35.7 35.0

7.32 0.050 17.0 2.441 33.9 16.9 0.83 40.3 39.5

7.31 0.063 18.0 2.980 34.7 16.8 0.92 44.5 43.6

7.30 0.079 19.0 3.555 35.5 16.5 1.01 48.2 47.1

7.28 0.099 20.0 4.127 36.2 16.2 1.11 51.3 50.0

7.27 0.124 20.9 4.664 36.7 15.8 1.20 53.5 52.1

7.26 0.156 21.9 5.174 37.1 15.2 1.29 55.3 53.6

7.24 0.196 22.9 5.624 37.5 14.6 1.37 56.6 54.7

7.23 0.248 23.9 6.031 37.8 13.9 1.45 57.5 55.1

7.22 0.313 25.0 6.386 38.1 13.1 1.52 58.1 55.2

7.21 0.393 25.9 6.689 38.3 12.3 1.59 58.5 55.0

7.20 0.496 27.0 6.958 38.4 11.5 1.65 58.7 54.5

7.19 0.625 28.0 7.192 38.6 10.6 1.70 58.9 53.8

7.18 0.785 28.9 7.394 38.7 9.7 1.74 59.1 52.8

7.17 0.988 29.9 7.576 38.8 8.8 1.78 59.3 51.6

, Idq=250mA

Application Note for Silicon RF Power Semiconductors

13/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-039-A -

@ f=941MHz

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.31 0.001 0.0 0.011 10.5 10.5 0.26 0.6 0.5

7.31 0.001 1.0 0.014 11.5 10.5 0.26 0.7 0.7

7.31 0.002 2.0 0.018 12.5 10.5 0.26 0.9 0.8

7.31 0.002 3.0 0.022 13.5 10.5 0.27 1.2 1.1

7.31 0.003 4.0 0.028 14.5 10.5 0.27 1.4 1.3

7.31 0.003 5.0 0.036 15.5 10.5 0.27 1.8 1.6

7.31 0.004 6.0 0.045 16.5 10.5 0.27 2.2 2.0

7.31 0.005 7.0 0.057 17.5 10.5 0.28 2.8 2.5

7.31 0.006 8.0 0.071 18.5 10.5 0.28 3.4 3.1

7.31 0.008 9.0 0.090 19.5 10.5 0.29 4.2 3.9

7.31 0.010 10.0 0.113 20.5 10.5 0.30 5.2 4.7

7.31 0.013 11.0 0.142 21.5 10.5 0.31 6.3 5.8

7.31 0.016 12.0 0.179 22.5 10.5 0.32 7.7 7.0

7.30 0.020 13.0 0.226 23.5 10.5 0.33 9.3 8.4

7.30 0.025 14.0 0.283 24.5 10.5 0.35 11.1 10.1

7.29 0.032 15.0 0.357 25.5 10.5 0.37 13.2 12.0

7.30 0.040 16.0 0.447 26.5 10.5 0.40 15.4 14.0

7.29 0.050 17.0 0.564 27.5 10.5 0.43 18.0 16.4

7.29 0.063 18.0 0.708 28.5 10.5 0.47 20.9 19.0

7.28 0.079 19.0 0.892 29.5 10.5 0.51 24.1 22.0

7.27 0.099 20.0 1.118 30.5 10.5 0.56 27.6 25.1

7.27 0.124 20.9 1.397 31.5 10.5 0.61 31.3 28.5

7.26 0.157 22.0 1.746 32.4 10.5 0.68 35.5 32.3

7.24 0.197 22.9 2.145 33.3 10.4 0.75 39.7 36.0

7.24 0.248 23.9 2.574 34.1 10.2 0.82 43.3 39.1

7.22 0.311 24.9 2.986 34.8 9.8 0.89 46.3 41.5

7.22 0.393 25.9 3.381 35.3 9.4 0.97 48.5 42.9

7.21 0.495 26.9 3.744 35.7 8.8 1.04 50.2 43.5

7.19 0.621 27.9 4.068 36.1 8.2 1.10 51.4 43.6

7.18 0.782 28.9 4.366 36.4 7.5 1.16 52.3 42.9

7.17 0.983 29.9 4.628 36.7 6.7 1.22 52.8 41.6

, Idq=250mA

Application Note for Silicon RF Power Semiconductors

14/15

RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

φ

)

V

- AN-900-039-A -

RD07MUS2B single-stage amplifier equivalent circuit (@f=763 to 870MHz)

Vgg

Vdd

C12

RF-in

C13

21mm

W

R1

19mm

C1

9mm

2.5mm

C2

1mm

C3

C4

RD07MUS2B

1.5mm

C5

0.5mm

C6

1mm

21mm

C7

C8

12mm

W

L1

1mm

Parts Type Value Type name

Capacitor

Resistance R1 4.7K OHM CR1/10-472JB

Inductance L1

Note:Boardmaterial-Glass-EpoxySubstrate
Microstriplinewidth=1.3mm/50OHM,er:4.8,t=0.8mm
W:Linewidth=1.0mm

C1 150pF GRM2162C1H151JD01E
C2 1pF GRM1884C1H1R0CZ01
C3 6pF GRM1882C1H6R0DZ01
C4 12pF GRM1882C1H120JA01
C5 10pF GRM1882C1H100JA01
C6 10pF GRM1882C1H100JA01
C7 8pF
C8 8pF

C9 6pF GRM1882C1H6R0DZ01
C10 1pF GRM1884C1H1R0CZ01
C11 150pF GRM2162C1H151JD01E
C12 1000pF
C13 100pF
C14 100pF
C15 1000pF
C16

37.8nH Enameled wire 7Turns,

Diameter:0.23mm,

22µF A0603

1.6mm (the out side diameter

CRM1882C1H8R0DZ01
CRM1882C1H8R0DZ01

GRM1882C1H102JA01
GRM1882C1H101JA01
GRM1882C1H101JA01
GRM1882C1H102JA01

2307A

Vgg

Vdd

C15

C16C14

C11

16.5mm

1mm

C9

C10

Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.

NICHICON CORPORATION

Hokuriku Electric Industry Co.,Ltd.

Yoneda Processing Place Co.,Ltd.

RF-out

ender

GND

GND

RF-in

RF-out

Application Note for Silicon RF Power Semiconductors

15/15