MITSUBISHI RD07MUS2B User Manual

UNIT:mm

< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

OUTLINE DRAWING

DESCRIPTION

RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

FEATURES

High power gain and High Efficiency.

Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58%

Integrated gate protection diode.

APPLICATION

For output stage of high power amplifiers in VHF/UHF/800MHz-band mobile radio sets.

6.0+/-0.15

INDEX MARK

4.9+/-0.15

(Gate)

0.2+/-0.05

1.0+/-0.05

(0.25)

0.9+/-0.1

4.6+/-0.05

3.3+/-0.05

0.8+/-0.05

1

2

3

Terminal No.

1.Drain (output)

2.Source (GND)

3.Gate (input)

Note ( ):center value

(0.25)

2.0+/-0.05

3.5+/-0.05

(0.22) (0.22)

RoHS COMPLIANT

RD07MUS2B is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.

1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)

SYMBOL PARAMETER CONDITIONS RATINGS UNIT

VDSS Drain to source voltage Vgs=0V 25 V

VGSS Gate to source voltage Vds=0V -5/+10 V

Pch Channel dissipation Tc=25

Pin Input Power Zg=Zl=50

°C



ID Drain Current - 3 A

Tch Junction Temperature - 150

Tstg Storage temperature - -40 to +125

50 W

0.8* W

°C

Rth j-c Thermal resistance Junction to case 2.5

Note: Above parameters are guaranteed independently.

*: 175MHz spec. is 0.6W

Publication Date : Oct．2011

1

°C/W

< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)

SYMBOL PARAMETER CONDITIONS

MIN TYP MAX.

I

DSS

I

GSS

V

Pout1 Output power - 7.2* - W

D1

Pout2 Output power 7** 8** - W

D2

Pout3 Output power - 7*** - W

D3

VSWRT Load VSWR tolerance

Note: Above parameters, ratings, limits and conditions are subject to change.

* At 135-175MHz broad matching ** At 450-527MHz broad matching *** At 763-870MHz broad matching

Drain cutoff current VDS=17V, VGS=0V - - 10 uA

Gate cutoff current VGS=5V, VDS=0V - - 1 uA

Gate threshold Voltage VDS=7.2V, IDS=1mA 0.5 1 1.5 V

TH

f=175MHz,VDD=7.2V

Drain efficiency

Pin=0.3W,Idq=250mA

f=527MHz ,VDD=7.2V

Pin=0.4W,Idq=250mA

f=870MHz ,VDD=7.2V

Pin=0.5W,Idq=250mA

VDD=9.5V,Po=7W(Pin Control)

f=527MHz,Idq=250mA,Zg=50

Load VSWR=20:1(All Phase)

58** 63** - %



LIMITS UNIT

- 65* - %

- 58*** - %

No destroy -

Publication Date : Oct．2011

2

< Silicon RF Power MOS FET (Discrete) >

Crss(pF)

Coss(pF)

V

RD07MUS2B

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

TYPICAL CHARACTERISTICS

(These are only typical curves and devices are not necessarily guaranteed at these curves.)

VDS-IDSCHARACTERISTICS

7

6

5

4

(A)

DS

I

3

2

1

0

0 2 4 6 8 10

160

140

120

100

80

60

Ciss(pF)

40

20

3V3.5V

Ta=+25°C

VGS=1.5V

VDS(V)

VDSVS. Ciss CHARACTERISTICS

Ta=+25°C f=1MHz

2.5V

2V

7

6

5

(S)

4

m

(A),g

3

DS

I

2

1

0

120

100

VGS-IDSCHARACTERISTICS

Ta=+25°C

=10V

DS

g

m

I

DS

0 0.5 1 1.5 2 2.5 3

VDSVS. Cos s CHARACTERISTICS

Ta=+25°C f=1MHz

80

60

40

20

VGS(V)

0

0 5 10 15 20

VDSVS. Crss CHARACTERISTICS

20

18

Ta=+25°C f=1MHz

16

14

12

10

8

6

4

2

0

0 5 10 15 20

Publication Date : Oct．2011

VDS(V)

0

0 5 10 15 20

VDS(V)

3

< Silicon RF Power MOS FET (Discrete) >

Po(dBm) , Gp(dB) , Idd(A)

RD07MUS2B

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

TYPICAL CHARACTERISTICS ( 135-175MHz )

(These are only typical curves and devices are not necessarily guaranteed at these curves.)

f-Po CHARACTERISTICS @f=135-175MHz

50

40

Po

100

80

f-Po CHARACTERISTICS @f=135-175MHz

10

Po

8

100

80

30

20

10

0

135 140 145 150 155 160 165 170 175

Pin-Po CHARACTERISTICS @f=175MHz

50

40

30

20

10

0

0 5 10 15 20 25 30

ηd

Gp

f (MHz)

Ta=+25°C f=175MHz Vdd=7.2V Idq=250mA

Pin(dBm)

Ta=+25°C Vdd=7.2V Pin=0.3W Idq=250mA

Idd

Po

ηd

Gp

Idd

60

40

20

0

100

80

60

40

20

0

6

ηd(%)

4

Pout(W) , Idd(A)

2

0

135 140 145 150 155 160 165 170 175

10

8

6

ηd(%)

4

Pout(W) , Idd(A)

2

0

0 0.2 0.4 0.6 0.8

ηd

Ta=+25°C Vdd=7.2V Pin=0.3W

Idd

f (MHz)

Pin-Po CHARACTERISTICS @f=175MHz

Idd

Pin(W)

Idq=250mA

Po

ηd

Ta=+25°C f=175MHz Vdd=7.2V Idq=250mA

60

40

20

0

100

80

60

40

20

0

ηd(%)

Vdd-Po CHARACTERISTICS @f=175MHz

25

20

15

Po(W)

10

5

0

3 4 5 6 7 8 9 10

Publication Date : Oct．2011

Ta=+25°C f=175MHz Pin=0.3W Idq=250mA Zg=ZI=50 ohm

Vdd(V )

Po

Idd

5

4

3

Idd(A)

2

1

0

Vgg-Po CHARACTERISTICS @f=175MHz

10

Ta=+25°C f=175MHz

8

Pin=0.3W Idq=250mA Zg=ZI=50 ohm

6

Po(W)

4

2

0

0 0.4 0.8 1.2 1.6 2

Vgg(V )

Po

Idd

5

4

3

Idd(A)

2

1

0

4

< Silicon RF Power MOS FET (Discrete) >

Po(dBm) , Gp(dB) , Idd(A)

RD07MUS2B

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

TYPICAL CHARACTERISTICS ( 450-527MHz )

(These are only typical curves and devices are not necessarily guaranteed at these curves.)

f-Po CHARACTERISTICS @f=450-527MHz

50

Po

40

30

20

10

ηd

Gp

Idd

0

450 460 470 480 490 500 510 520 530

f (MHz)

Pin-Po CHARACTERISTICS @f=527MHz

50

Ta=+25°C f=527MHz

40

Vdd=7.2V Idq=250mA

30

20

10

Ta=+25°C Vdd=7.2V Pin=0.4W Idq=250mA

Po

ηd

Gp

Idd

100

80

60

40

20

0

100

80

60

40

20

f-Po CHARACTERISTICS @f=450-527MHz

10

Po

8

6

ηd(%)

4

Pout(W) , Idd(A)

2

0

450 460 470 480 490 500 510 520 530

10

8

6

4

Pout(W) , Idd(A)

2

ηd

Idd

f (MHz)

Pin-Po CHARACTERISTICS @f=527MHz

Po

ηd

Idd

Ta=+25°C Vdd=7.2V Pin=0.4W Idq=250mA

Ta=+25°C f=527MHz Vdd=7.2V Idq=250mA

100

80

60

40

20

0

100

80

60

40

20

ηd(%)

0

0 5 10 15 20 25 30

Vdd-Po CHARACTERISTICS @f=527MHz

25

Ta=+25°C

20

15

Po(W)

10

f=527MHz Pin=0.4W Idq=250mA Zg=ZI=50 ohm

5

0

3 4 5 6 7 8 9 10

Publication Date : Oct．2011

Pin(dBm)

Vdd(V )

Po

Idd

0

5

4

3

Idd(A)

2

1

0

0.0 0.2 0.4 0.6 0.8 Pin(W)

Vgg-Po CHARACTERISTICS @f=527MHz

10

Ta=+25°C f=527MHz

8

Pin=0.4W Idq=250mA Zg=ZI=50 ohm

6

Po(W)

4

2

0

0 0.4 0.8 1.2 1.6 2

Vgg(V )

Po

Idd

0

5

4

3

Idd(A)

2

1

0

5

< Silicon RF Power MOS FET (Discrete) >

Po(dBm) , Gp(dB) , Idd(A)

RD07MUS2B

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

TYPICAL CHARACTERISTICS ( 763-870MHz )

(These are only typical curves and devices are not necessarily guaranteed at these curves.)

f-Po CHARACTERISTICS @f=763-870MHz

50

Po

40

30

Ta=+25°C

20

10

0

760 780 800 820 840 860 880 900 920 940 960

50

40

30

20

10

Vdd=7.2V Pin=0.5W Idq=250mA

Idd

f (MHz)

Pin-Po CHARACTERISTICS @f=870MHz

Ta=+25°C f=870MHz Vdd=7.2V Idq=250mA

η

ｄ

Gp

Po

η

ｄ

Gp

Idd

100

80

60

40

20

100

80

60

40

20

0

f-Po CHARACTERISTICS @f=763-870MHz

10

Ta=+25°C

Po

ηd

Vdd=7.2V Pin=0.5W Idq=250mA

Ta=+25°C f=870MHz Vdd=7.2V Idq=250mA

8

6

ηd(%)

4

Pout(W) , Idd(A)

2

0

760 780 800 820 840 860 880 900 920 940 960

Pin-Po CHARACTERISTICS @f=870MHz

10

8

6

4

Pout(W) , Idd(A)

2

Po

ηd

Idd

f (MHz)

Idd

100

80

60

40

20

0

100

80

60

40

20

ηd(%)

0

0 5 10 15 20 25 30

Vdd-Po CHARACTERISTICS @f=870MHz

25

Ta=+25°C

20

15

Po(W)

10

f=870MHz Pin=0.5W Idq=250mA Zg=ZI=50 ohm

5

0

3 4 5 6 7 8 9 10

Publication Date : Oct．2011

Pin(dBm)

Vdd(V )

Idd

Po

0

5

4

3

Idd(A)

2

1

0

0.0 0.2 0.4 0.6 0.8 Pin(W)

0

6