MITSUBISHI RD06HVF User Manual
< Silicon RF Power MOS FET (Discrete) >
12.3MIN
12.3+/-0.6
3.2+/-0.4
RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
DESCRIPTION
RD06HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
RoHS COMPLIANT
RD06HVF1-101 is a RoHS compliant products.
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
/-0.4
9+
X
2
2.5
1.2+/-0.4
0.8+0.10/-0.15
3
3.1+/-0.6
4.8MA
1
2.5
5deg
9.5MAX
note:
Torelance of no designation means typical value.
1.3+/-0.4
0.5+0.10/-0.15
4.5+/-0.5
PINS
1:GATE
2:SOURCE
3:DRAIN
RoHS compliance is indicate by the letter “G” after the lot
marking.
This product include the lead in high melting temperature type solders.
However,it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
V
DSS
V
GSS
Pch Channel dissipation Tc=25
Pin Input power Zg=Zl=50
ID Drain current - 3 A
Tch Channel temperature - 150
Tstg Storage temperature - -40 to +150
Rth j-c Thermal resistance junction to case 4.5
Note 1: Above parameters are guaranteed independently.
Drain to source voltage Vgs=0V 50 V
Gate to source voltage Vds=0V +/- 20 V
°C
27.8 W
0.6 W
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
LIMITS UNIT
MIN TYP MAX.
I
DSS
I
GSS
V
Pout Output power 6 10 - W
D
Note : Above parameters , ratings , limits and conditions are subject to change.
Zero gate voltage drain current VDS=17V, VGS=0V - - 10 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Gate threshold Voltage VDS=12V, IDS=1mA 1.9 - 4.9 V
TH
VDD=12.5V, Pin=0.3W,
Drain efficiency
Load VSWR tolerance VDD=15.2V,Po=6W(Pin Control)
f=175MHz, Idq=0.3A
f=175MHz,Idq=0.3A,Zg=50
Load VSWR=20:1(All Phase)
60 65 - %
No destroy -
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
50
40
30
20
Pch(W)
10
CHANNEL DISSIPATION
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
4
Ta=+25°C
3
2
Ids(A)
1
0
0 2 4 6 8 10
Vds(V)
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Vgs-Ids CHARACTERISTICS
5
Ta=+25°C
Vds=10V
4
3
Ids(A)
2
1
0
0 2 4 6 8 10
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
60
Ta=+25°C
f=1MHz
50
40
30
Ciss(pF)
20
10
0
0 10 20 30
Vds(V)
Vds VS. Coss CHARACTERISTICS
100
Ta=+25°C
f=1MHz
80
60
40
Coss(pF)
20
0
0 10 20 30
Publication Date : Oct．2011
Vds(V)
Vds VS. Crss CHARACTERISTICS
10
Ta=+25°C
f=1MHz
8
6
4
Crss(pF)
2
0
0 10 20 30
Vds(V)
3
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