MITSUBISHI RD06HVF User Manual

< Silicon RF Power MOS FET (Discrete) >

12.3MIN

12.3+/-0.6

3.2+/-0.4

RD06HVF1

RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

DESCRIPTION

RD06HVF1 is a MOS FET type transistor specifically

designed for VHF RF power amplifiers applications.

FEATURES

High power gain:

Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

APPLICATION

For output stage of high power amplifiers in

VHF band mobile radio sets.

RoHS COMPLIANT

RD06HVF1-101 is a RoHS compliant products.

OUTLINE DRAWING

9.1+/-0.7

3.6+/-0.2

2

/-0.4
9+

X

2

2.5

1.2+/-0.4

0.8+0.10/-0.15

3

3.1+/-0.6

4.8MA

1

2.5

5deg

9.5MAX

note:

Torelance of no designation means typical value.

1.3+/-0.4

0.5+0.10/-0.15

4.5+/-0.5

PINS

1:GATE
2:SOURCE
3:DRAIN

RoHS compliance is indicate by the letter “G” after the lot

marking.

This product include the lead in high melting temperature type solders.

However,it is applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

Publication Date : Oct．2011

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< Silicon RF Power MOS FET (Discrete) >

RD06HVF1

RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

ABSOLUTE MAXIMUM RATINGS

(Tc=25°CUNLESS OTHERWISE NOTED)

SYMBOL PARAMETER CONDITIONS RATINGS UNIT

V

DSS

V

GSS

Pch Channel dissipation Tc=25

Pin Input power Zg=Zl=50

ID Drain current - 3 A

Tch Channel temperature - 150

Tstg Storage temperature - -40 to +150

Rth j-c Thermal resistance junction to case 4.5

Note 1: Above parameters are guaranteed independently.

Drain to source voltage Vgs=0V 50 V

Gate to source voltage Vds=0V +/- 20 V

°C



27.8 W

0.6 W

°C

°C

°C/W

ELECTRICAL CHARACTERISTICS

(Tc=25°C, UNLESS OTHERWISE NOTED)

SYMBOL PARAMETER CONDITIONS

LIMITS UNIT

MIN TYP MAX.

I

DSS

I

GSS

V

Pout Output power 6 10 - W

D

Note : Above parameters , ratings , limits and conditions are subject to change.

Zero gate voltage drain current VDS=17V, VGS=0V - - 10 uA

Gate to source leak current VGS=10V, VDS=0V - - 1 uA

Gate threshold Voltage VDS=12V, IDS=1mA 1.9 - 4.9 V

TH

VDD=12.5V, Pin=0.3W,

Drain efficiency

Load VSWR tolerance VDD=15.2V,Po=6W(Pin Control)

f=175MHz, Idq=0.3A

f=175MHz,Idq=0.3A,Zg=50

Load VSWR=20:1(All Phase)



60 65 - %

No destroy -

Publication Date : Oct．2011

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< Silicon RF Power MOS FET (Discrete) >

RD06HVF1

RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

TYPICAL CHARACTERISTICS

CHANNNEL DISSIPATION VS.

AMBIENT TEMPERATURE

50

40

30

20

Pch(W)

10

CHANNEL DISSIPATION

0

0 40 80 120 160 200

AMBIENT TEMPERATURE Ta(°C)

Vds-Ids CHARACTERISTICS

4

Ta=+25°C

3

2

Ids(A)

1

0

0 2 4 6 8 10

Vds(V)

Vgs=10V

Vgs=9V

Vgs=8V

Vgs=7V

Vgs=6V

Vgs=5V

Vgs-Ids CHARACTERISTICS

5

Ta=+25°C
Vds=10V

4

3

Ids(A)

2

1

0

0 2 4 6 8 10

Vgs(V)

Vds VS. Ciss CHARACTERISTICS

60

Ta=+25°C
f=1MHz

50

40

30

Ciss(pF)

20

10

0

0 10 20 30

Vds(V)

Vds VS. Coss CHARACTERISTICS

100

Ta=+25°C
f=1MHz

80

60

40

Coss(pF)

20

0

0 10 20 30

Publication Date : Oct．2011

Vds(V)

Vds VS. Crss CHARACTERISTICS

10

Ta=+25°C
f=1MHz

8

6

4

Crss(pF)

2

0

0 10 20 30

Vds(V)

3

< Silicon RF Power MOS FET (Discrete) >

Vds=10V

Vds=10V

RD06HVF1

RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

TYPICAL CHARACTERISTICS

Pin-Po CHARACTERISTICS

50

40

Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=0.3A

Po

30

20

Gp

10

Po(dBm) , Gp(dB) , Idd(A)

0

0 5 10 15 20 25 30

Pin(dBm)

Vdd-Po CHARACTERISTICS

16

Ta=25°C

14

f=175MHz
Pin=0.3W
Idq=0.3A

12

Zg=ZI=50 ohm

Po

10

8

Po(W)

6

4

2

0

4 6 8 10 12 14

Vdd(V)

Pin-Po CHARACTERISTICS

100

14

Po

12

100

90

80

10

η

60

ｄ

ηd(%)

40

20

Ｉｄｄ

0

8

6

Pout(W) , Idd(A)

4

2

Idd

Ta=25°C
f=175MHz
Vdd=12.5V
Idq=0.3A

0

80

70

ηd

60

ηd(%)

50

40

30

0.0 0.1 0.2 0.3 0.4 0.5 0.6
Pin(W)

Vgs -Ids CHARACTORISTICS 2

4

3

2

Idd

Idd(A)

1

0

5

4

Tc=-25~+75°C

+25°C

-25°C

3

2

Ids(A),GM(S)

+75°C

1

0

0 2 4 6 8 10

Vgs(V)

Vgs -gm CHARACTORISTICS

2.0

Tc=-25~+75°C

1.5

1.0

m(S)

g

0.5

0.0
0 1 2 3 4 5 6 7 8 9

Publication Date : Oct．2011

-25°C

+25°C

+75°C

Vgs(V)

4

< Silicon RF Power MOS FET (Discrete) >

RD06HVF1

RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

TEST CIRCUIT(f=175MHz)

RF-IN

300pF

L1

C1

8.2kOHM

L2 L3

75

92

100

72

300pF

55

9.1kOHM

100OHM

10pF

33

52

L4

30

Vgg

25

175MHz

RD06HVF1

7

Vdd

L6

C3

C2

L5

RF-OUT

82pF

5pF 30pF

5

70

87

92

100

C1:2200pF 10uF in parallel

C2:2200pF*2 in parallel

C3:2200pF,330uF in parallel

L1-L3:6Turns,I.D1.6mm,D0.4mm enameled copper wire

L4:1Turns,I.D6mm,D1.6mm silver plateted copper wire

L5:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

L6:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

Publication Date : Oct．2011

Note:Board material PTFE substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm

Dimensions:mm

5

< Silicon RF Power MOS FET (Discrete) >

RD06HVF1

RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS

f=175MHz Zout*

f=135MHz Zo

f=175MHz Zin*

f=175MH Zo

Zin , Zout

f Zin Zout

(MHz) (ohm) (ohm) Conditions

Zo=50ohm

175 4.25-j25.6 5.64-j1.05

Po=10W, Vdd=12.5V,Pin=0.3W

Publication Date : Oct．2011

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< Silicon RF Power MOS FET (Discrete) >

RD06HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)

Freq.

[MHz]

(mag)

(ang)

(mag)

(ang)

(mag)

(ang)

(mag)

(ang)

10

0.985

-18.8

34.407

165.9

0.008

76.2

0.826

-17.3

30

0.900

-50.4

30.427

143.3

0.021

59.4

0.767

-43.6

50

0.799

-74.4

24.979

126.1

0.029

43.2

0.677

-65.0

100

0.667

-109.6

15.565

100.7

0.032

27.3

0.547

-96.8

150

0.636

-129.0

10.953

85.1

0.032

23.1

0.523

-113.4

200

0.630

-140.1

8.194

73.7

0.029

25.3

0.528

-124.7

250

0.645

-148.2

6.528

63.9

0.027

34.5

0.561

-132.7

300

0.663

-155.0

5.315

55.2

0.027

49.1

0.588

-139.6

350

0.685

-160.7

4.437

47.4

0.031

61.8

0.622

-145.9

400

0.708

-165.9

3.771

39.9

0.039

71.0

0.657

-151.7

450

0.729

-170.8

3.233

33.2

0.048

75.8

0.686

-157.0

500

0.752

-175.4

2.826

26.8

0.059

77.9

0.715

-162.3

550

0.771

179.9

2.475

20.7

0.070

76.9

0.743

-167.6

600

0.789

175.4

2.186

15.2

0.083

76.1

0.763

-172.3

650

0.804

171.2

1.943

9.7

0.095

73.7

0.789

-177.3

700

0.819

166.9

1.738

4.6

0.108

71.0

0.804

178.1

750

0.834

162.6

1.560

0.0

0.120

68.1

0.820

173.5

800

0.842

158.5

1.410

-4.5

0.133

65.0

0.837

169.0

850

0.851

154.3

1.275

-8.7

0.145

61.6

0.847

164.8

900

0.859

150.3

1.160

-12.6

0.157

58.2

0.858

160.2

950

0.866

146.2

1.058

-16.9

0.167

54.5

0.869

155.7

1000

0.870

142.3

0.963

-20.0

0.179

51.0

0.876

151.8

RD06HVF1

RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

S11 S21 S12 S22

Publication Date : Oct．2011

7

< Silicon RF Power MOS FET (Discrete) >

have

until cold after switch

his products without cause damage for human and

details

copies of the formal

(RF power transistors) are designed

other applications.

In particular, while these products are highly reliable for their designed purpose, they are not manufactured

quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed

In the application, which is base station applications and

off frequency

during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain

predicted operating life time of

an authorized Mitsubishi

therefore

device is

It is

sink in conjunction with other cooling methods as needed (fan,

lower than 120deg/C(in case of

6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the

exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to

extreme short current flow between the drain and the source of the device. These results causes in fire or

the

Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in

, please refer the last page

RD06HVF1

RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

ATTENTION:

1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.

2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.

3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.

PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:

1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.

2.RA series products (RF power amplifier modules) and RD series products

for consumer mobile communication terminals and were not specifically designed for use in

under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-

period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.

3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.

4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.

5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heat­etc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.

injury.

7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.

8.
any way from it’s original form.

9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.

10. Please refer to the additional precautions in the formal specification sheet.

Publication Date : Oct．2011

8

< Silicon RF Power MOS FET (Discrete) >

RD06HVF1

RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.

•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).

•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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responsibility for any damage, liability or other loss resulting from the information contained herein.

•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.

•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
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under a license from the Japanese government and cannot be imported into a country other than the approved
destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.

•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.

© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : Oct．2011

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