< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
DESCRIPTION
RD05MMP1 is a MOS FET type transistor
specifically designed for UHF RF power
OUTLINE DRAWING
8.0+/-0.2
0.2+/-0 .05
(a)
(b)
7.0+/-0 .2
(b)
0.65+/-0.2
amplifiers applications.
FEATURES
•High power gain:
Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
•High Efficiency: 43%min. (941MHz)
•No gate protection diode
APPLICATION
For output stage of high power amplifiers in
INDEX MARK
[Gate]
(3.6)
0.7+/-0.1
(d)
(4.5)
6.2+/-0.2
4.2+/-0.2
5.6+/-0.2
0.95+/- 0.2
2.6+/-0 .2
TOP VIEW SIDE VIEW BOTTOM VIEW
DETAIL A
Termi nal N o.
(a)Dra in [ou tput]
(b)Sou rce [ GND]
(c)Gat e [inp ut]
(d)Sou rce
UNIT: mm
NOT ES:
1. ( ) Typic al va lue
SIDE VIEW
1.8+/-0.1
DETA IL A
Standoff = max 0.05
941MHz band mobile radio sets.
RoHS COMPLIANT
RD05MMP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting
temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
(c)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 40 V
VGSS Gate to source voltage Vds=0V -5 to +10 V
Pch Channel dissipation Tc=25
Pin Input Power Zg=Zl=50
°C
ID Drain Current - 3 A
Tch Junction Temperature - 150
Tstg Storage temperature - -40 to +125
Rth j-c Thermal resistance Junction to case 1.7
Note: Above parameters are guaranteed independently.
Publication Date : Oct．2011
1
73 W
1.4 W
°C
°C
°C/W
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS
I
DSS
I
GSS
V
Pout Output power 5.5 6 - W
D
VSWRT Load VSWR tolerance
Note : Above parameters , ratings , limits and conditions are subject to change.
Zero gate voltage drain current VDS=17V, VGS=0V - - 10 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Gate threshold Voltage VDS=12V, IDS=1mA 0.5 - 2.5 V
TH
Drain efficiency
(Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
MIN TYP MAX.
f=941MHz , VDD=7.2V
Pin=0.7W,Idq=1.0A
VDD=9.5V,Po=5.5W(Pin Control)
f=941MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
43 - - %
No destroy -
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
Ciss(pF)
Coss(pF)
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
60
,
50
AMBIENT TEMPERATURE
*PCB: Glass epoxy (t=0.8 mm)
Thermal sheet: GELTEC COOH-4000(0.5)
40
30
On PC B with Termal sheet
20
10
Free Air
andHeat-sink
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(deg:C.)
Vds -Ids CHARACTERISTICS
9
Ta=+25°C
8
7
6
5
4
Ids(A)
3
2
1
0
0 1 2 3 4 5 6 7 8 9
Vds(V)
Vgs=5.0V
Vgs=4.5V
Vgs=4.0V
Vgs=3.5V
Vgs=3.0V
Vgs -Ids CHARACTERISTICS
8
Ta=+25°C
Vds=10V
6
4
GM
Ids(A),gm(S)
2
0
0 1 2 3 4 5
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
160
Ta=+25°C
140
f=1MHz
120
100
80
60
40
20
0
0 5 10 15 20
Vds(V)
Ids
Publication Date : Oct．2011
Vds VS. Coss CHARACTERISTICS
160
140
120
100
80
60
40
20
0
0 5 10 15 20
Vds(V)
Ta=+25°C
f=1MHz
Vds VS. Crs s CHARACTERISTICS
20
18
Ta=+25°C
f=1MHz
16
14
12
10
Crss (pF)
8
6
4
2
0
0 5 10 15 20
Vds(V)
3
< Silicon RF Power MOS FET (Discrete) >
Po(dBm) , Gp(dB) , Idd(A)
Vds=10V
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=941MHz
Ta=+25°C
40
f=941M Hz
Vdd= 7.2V
Idq=1.0A
Po
30
20
Gp
10
Ｉｄｄ
0
5 10 15 20 25 30 35
Pin(dBm)
Vdd-Po CHARACTERISTICS @f=941MHz
10
Ta=25°C
8
f=941M Hz
Pin=0.7W
Idq=1.0A
Zg= ZI=50 ohm
Po
Pin-Po CHARACTERISTICS @f=941MHz
20
15
10
Ta=25°C
f=941M Hz
Vdd= 7.2V
Idq=1.0A
ηd
Po
80
60
η
ｄ
40
ηd(%)
80
70
60
50
40
ηd(%)
30
Pout(W) , Idd(A)
20
0
5
Idd
0
20
10
0
0.0 0.5 1.0 1.5
Pin(W)
Vgs-Ids CHARACTORISTICS 2
5
8
-25°C
Tc=-25~+75°C
4
6
+25°C
+75°C
6
Po(W)
4
2
0
4 6 8 10 12
Vdd(V )
3
4
Idd(A)
Idd
2
Ids(A),gm(S)
2
1
0
0
0 1 2 3 4 5
Vgs(V )
Publication Date : Oct．2011
4
< Silicon RF Power MOS FET (Discrete) >
RF-OUT
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TEST CIRCUIT (f=941MHz)
Vgg
C1
19mm
W W
4.7k OHM
130pF
RF-in
Note:Boad material PTFE substrate
8mm
Micro strip line width=2.2mm/50、er:2.6、t=0.8mm
W:Line width=1.0mm
：Spring（gilding)、X:3mm Y:2.5mm
1pF
20mm
3mm
4mm
12pF*
RD05MMP1
941MHz
22μF、50V
C2
9pF
0.5mm
9pF
L:24.9nH、6Turns、D:0.43mm、φ2.46mm(outside diameter)
C：GRM39、”＊” Mark C:GRM708
C1、C2:1000ｐF
L
12mm
Vdd
19mm
6mm
2pF*
21mm
2pF*
130pF
Publication Date : Oct．2011
5
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
100
0.841
-169.5
7.706
82.9
0.020
-3.4
0.806
-171.5
125
0.845
-171.5
6.148
78.7
0.020
-5.0
0.817
-172.9
150
0.846
-172.4
5.024
75.0
0.019
-6.5
0.810
-174.2
175
0.848
-173.3
4.240
72.0
0.018
-6.6
0.817
-174.7
200
0.848
-173.7
3.669
69.4
0.017
-7.1
0.822
-175.0
225
0.852
-174.5
3.227
66.5
0.017
-8.5
0.835
-175.1
250
0.858
-174.9
2.856
63.6
0.017
-8.9
0.841
-175.3
275
0.861
-175.2
2.543
60.8
0.016
-8.7
0.838
-175.8
300
0.866
-175.3
2.279
58.6
0.015
-8.2
0.840
-176.2
325
0.872
-175.5
2.068
56.5
0.014
-3.2
0.849
-176.4
350
0.877
-175.5
1.886
54.1
0.013
-4.3
0.858
-176.8
375
0.878
-176.2
1.735
51.5
0.013
-3.6
0.868
-177.0
400
0.880
-176.6
1.584
49.3
0.012
-0.8
0.869
-177.4
425
0.886
-177.1
1.456
47.4
0.011
2.0
0.868
-177.5
450
0.891
-177.2
1.343
45.9
0.011
7.3
0.874
-177.8
475
0.897
-177.2
1.249
44.1
0.011
10.5
0.880
-178.2
500
0.900
-177.3
1.164
42.2
0.010
16.6
0.886
-178.7
525
0.904
-177.6
1.086
40.3
0.010
19.9
0.893
-179.1
550
0.905
-178.1
1.010
38.7
0.010
25.6
0.893
-179.0
575
0.907
-178.6
0.945
37.2
0.010
30.6
0.897
-179.4
600
0.913
-178.9
0.889
35.8
0.011
35.9
0.901
-179.9
625
0.918
-178.9
0.833
34.6
0.011
40.4
0.908
179.6
650
0.920
-178.9
0.786
33.2
0.011
46.3
0.911
179.2
675
0.920
-179.1
0.741
31.9
0.012
49.2
0.909
179.0
700
0.925
-179.5
0.698
30.6
0.012
51.0
0.915
178.6
725
0.925
179.8
0.660
29.4
0.013
57.5
0.916
178.4
750
0.927
179.5
0.625
28.3
0.013
58.5
0.917
177.9
775
0.931
179.2
0.595
27.1
0.014
60.4
0.921
177.4
800
0.929
179.3
0.565
26.3
0.015
62.2
0.925
177.0
825
0.936
179.2
0.537
25.4
0.016
67.1
0.924
176.7
850
0.936
179.0
0.513
24.6
0.017
67.9
0.923
176.6
875
0.935
178.5
0.488
23.6
0.019
68.4
0.921
176.3
900
0.935
178.1
0.469
22.6
0.020
67.0
0.922
175.5
925
0.933
177.9
0.446
21.7
0.023
64.2
0.919
175.0
950
0.938
177.8
0.426
20.3
0.024
52.9
0.906
175.4
975
0.943
177.8
0.404
20.3
0.019
51.8
0.920
176.6
1000
0.943
177.5
0.388
19.9
0.019
61.8
0.933
176.0
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
S11 S21 S12 S22
Publication Date : Oct．2011
6
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
100
0.878
-174.2
7.474
85.7
0.014
4.3
0.869
-176.3
125
0.884
-175.6
6.046
81.9
0.014
2.9
0.865
-176.9
150
0.880
-176.9
4.919
78.9
0.014
3.3
0.865
-177.5
175
0.877
-177.4
4.153
77.5
0.013
4.7
0.872
-177.9
200
0.879
-177.7
3.636
76.1
0.013
8.8
0.873
-178.3
225
0.888
-178.2
3.246
73.8
0.013
4.2
0.875
-178.5
250
0.888
-178.7
2.912
71.1
0.013
7.9
0.874
-178.6
275
0.884
-179.1
2.598
69.0
0.012
9.1
0.869
-178.8
300
0.884
-179.2
2.351
67.4
0.012
11.5
0.872
-178.9
325
0.891
-179.6
2.152
66.0
0.012
13.3
0.882
-179.2
350
0.893
-179.7
1.995
64.1
0.012
18.1
0.884
-179.4
375
0.897
179.8
1.849
62.2
0.011
16.1
0.886
-179.5
400
0.897
179.7
1.708
60.0
0.012
20.8
0.883
-179.3
425
0.896
179.6
1.580
58.5
0.012
25.7
0.883
-179.6
450
0.902
179.3
1.475
57.1
0.012
26.7
0.886
-179.7
475
0.903
178.9
1.388
55.6
0.012
30.8
0.892
180.0
500
0.906
178.7
1.308
53.7
0.012
33.2
0.893
179.9
525
0.905
178.5
1.222
52.1
0.012
35.6
0.894
179.8
550
0.906
178.4
1.152
50.6
0.012
38.7
0.896
179.7
575
0.910
178.2
1.086
49.4
0.012
42.5
0.898
179.6
600
0.914
177.9
1.030
48.2
0.012
45.7
0.902
179.2
625
0.915
177.5
0.978
46.6
0.013
46.2
0.906
179.1
650
0.916
177.3
0.928
45.1
0.013
52.5
0.906
179.0
675
0.917
177.3
0.877
43.8
0.014
53.1
0.906
179.1
700
0.919
177.2
0.832
43.0
0.015
55.3
0.905
178.8
725
0.921
176.9
0.798
41.7
0.015
56.8
0.908
178.5
750
0.925
176.6
0.759
40.5
0.015
59.3
0.911
178.1
775
0.924
176.5
0.725
39.2
0.016
59.2
0.916
177.9
800
0.926
176.3
0.694
38.3
0.016
62.2
0.916
178.0
825
0.927
176.1
0.661
37.2
0.017
63.6
0.921
178.1
850
0.929
175.8
0.634
36.5
0.018
64.2
0.918
177.9
875
0.929
175.6
0.611
35.5
0.019
65.1
0.917
177.4
900
0.931
175.5
0.585
34.3
0.019
66.8
0.921
177.0
925
0.930
175.2
0.562
33.4
0.020
66.6
0.923
176.8
950
0.928
175.2
0.539
32.6
0.021
65.2
0.928
176.9
975
0.932
174.8
0.518
31.9
0.022
67.9
0.930
177.3
1000
0.937
174.8
0.496
31.1
0.022
68.8
0.926
177.0
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
S11 S21 S12 S22
Publication Date : Oct．2011
7
< Silicon RF Power MOS FET (Discrete) >
have
until cold after switch
his products without cause damage for human and
details
copies of the formal
(RF power transistors) are designed
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
predicted operating life time of
an authorized Mitsubishi
therefore
device is
It is
sink in conjunction with other cooling methods as needed (fan,
lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
the
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
, please refer the last page
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
for consumer mobile communication terminals and were not specifically designed for use in
under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.
8.
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
8
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be exported
under a license from the Japanese government and cannot be imported into a country other than the approved
destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
9
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