MITSUBISHI RD05MMP1 User Manual

< Silicon RF Power MOS FET (Discrete) >

RD05MMP1

RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W

DESCRIPTION

RD05MMP1 is a MOS FET type transistor

specifically designed for UHF RF power

OUTLINE DRAWING

8.0+/-0.2

0.2+/-0 .05

(a)

(b)

7.0+/-0 .2

(b)

0.65+/-0.2

amplifiers applications.

FEATURES

•High power gain:

Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz

•High Efficiency: 43%min. (941MHz)

•No gate protection diode

APPLICATION

For output stage of high power amplifiers in

INDEX MARK

[Gate]

(3.6)

0.7+/-0.1

(d)

(4.5)

6.2+/-0.2

4.2+/-0.2

5.6+/-0.2

0.95+/- 0.2

2.6+/-0 .2

TOP VIEW SIDE VIEW BOTTOM VIEW

DETAIL A

Termi nal N o.

(a)Dra in [ou tput]
(b)Sou rce [ GND]
(c)Gat e [inp ut]
(d)Sou rce

UNIT: mm

NOT ES:

1. ( ) Typic al va lue

SIDE VIEW

1.8+/-0.1

DETA IL A

Standoff = max 0.05

941MHz band mobile radio sets.

RoHS COMPLIANT

RD05MMP1 is a RoHS compliant product.

RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting

temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)

(c)

ABSOLUTE MAXIMUM RATINGS

(Tc=25°CUNLESS OTHERWISE NOTED)

SYMBOL PARAMETER CONDITIONS RATINGS UNIT

VDSS Drain to source voltage Vgs=0V 40 V

VGSS Gate to source voltage Vds=0V -5 to +10 V

Pch Channel dissipation Tc=25

Pin Input Power Zg=Zl=50

°C



ID Drain Current - 3 A

Tch Junction Temperature - 150

Tstg Storage temperature - -40 to +125

Rth j-c Thermal resistance Junction to case 1.7

Note: Above parameters are guaranteed independently.

Publication Date : Oct．2011

1

73 W

1.4 W

°C

°C

°C/W

< Silicon RF Power MOS FET (Discrete) >

RD05MMP1

RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS

I

DSS

I

GSS

V

Pout Output power 5.5 6 - W

D

VSWRT Load VSWR tolerance

Note : Above parameters , ratings , limits and conditions are subject to change.

Zero gate voltage drain current VDS=17V, VGS=0V - - 10 uA

Gate to source leak current VGS=10V, VDS=0V - - 1 uA

Gate threshold Voltage VDS=12V, IDS=1mA 0.5 - 2.5 V

TH

Drain efficiency

(Tc=25°C, UNLESS OTHERWISE NOTED)

LIMITS UNIT

MIN TYP MAX.

f=941MHz , VDD=7.2V

Pin=0.7W,Idq=1.0A

VDD=9.5V,Po=5.5W(Pin Control)

f=941MHz,Idq=1.0A,Zg=50

Load VSWR=20:1(All Phase)



43 - - %

No destroy -

Publication Date : Oct．2011

2

< Silicon RF Power MOS FET (Discrete) >

CHANNEL DISSIPATION Pch(W)

Ciss(pF)

Coss(pF)

RD05MMP1

RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W

TYPICAL CHARACTERISTICS

CHANNEL DISSIPATION VS.

60

,

50

AMBIENT TEMPERATURE

*PCB: Glass epoxy (t=0.8 mm)

Thermal sheet: GELTEC COOH-4000(0.5)

40

30

On PC B with Termal sheet

20

10

Free Air

andHeat-sink

0

0 40 80 120 160 200

AMBIENT TEMPERATURE Ta(deg:C.)

Vds -Ids CHARACTERISTICS

9

Ta=+25°C

8

7

6

5

4

Ids(A)

3

2

1

0

0 1 2 3 4 5 6 7 8 9

Vds(V)

Vgs=5.0V

Vgs=4.5V

Vgs=4.0V

Vgs=3.5V

Vgs=3.0V

Vgs -Ids CHARACTERISTICS

8

Ta=+25°C
Vds=10V

6

4

GM

Ids(A),gm(S)

2

0

0 1 2 3 4 5

Vgs(V)

Vds VS. Ciss CHARACTERISTICS

160

Ta=+25°C

140

f=1MHz

120

100

80

60

40

20

0

0 5 10 15 20

Vds(V)

Ids

Publication Date : Oct．2011

Vds VS. Coss CHARACTERISTICS

160

140

120

100

80

60

40

20

0

0 5 10 15 20

Vds(V)

Ta=+25°C
f=1MHz

Vds VS. Crs s CHARACTERISTICS

20

18

Ta=+25°C
f=1MHz

16

14

12

10

Crss (pF)

8

6

4

2

0

0 5 10 15 20

Vds(V)

3