MITSUBISHI RD04HMS2, RD70HUF2 User Manual
APPLICATION NOTE
SUBJECT: RD04HMS2 & RD70HUF2 two-stage amplifier at f=450-530MHz.(Vdd=12.5V)
Features:
- The evaluation board for RD04HMS2 & RD70HUF2 two-stage amplifier
- Frequency: 450-530MHz
- Vdd: 12.5V
- Input power: 0.2W
- Output power: 72-90W
Silicon RF Power Semiconductors
Document NO. AN-UHF-128
Date :18thAug. 2011
Prepared : S.Nakatsuka
S.Kametani
Confirmed :T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Quiescent Current: RD04HMS2 ; 0.1A, RD70HUF2 ; 1A
- Operating Current: 10-13A
- Surface-mounted RF power amplifier structure
PCB L=82.5mm W=60.0mm
Application Note for Silicon RF Power Semiconductors
1/18
Contents
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
- AN-UHF-128 -
Page
1. Equivalent Circuitry ------------------------------------------------------------
2. Component List and Standard Deliverable -------------------------------------
3. PCB Layout -----------------------------------------------------------------------
4. Standard Land Pattern Dimensions -----------------------------------------
5. Typical RF Characteristics ---------------------------------------------------5-1. Frequency characteristics ------------------------------------------
5-2. Pout vs. Pin characteristics --------------------------------------------
5-3. Pout vs. Vdd characteristics ----------------------------------------5-4. Pout vs. Vgg characteristics --------------------------------------------------
10
10
12
15
17
3
4
6
9
Application Note for Silicon RF Power Semiconductors
2/18
1. Equivalent Circuitry
C2
RF-OUT
W=2.0
W=2.0
W=2.0
W=2.0
C38
C7
C8
ML 1C9ML1
C10
C11
C13
C12
C14
C18R3C17
C20
C19
4Via holesL4R4
R5
Source
Electrode4
Source
Electrode3
W=1.8
W=1.3
W=1.8
W=1.3
Center Source
Electrode
C24
C26
C23
C25
C31
W=1.9
W=2.0
C40
C42
Drain Bias
C34
C37
C41
RD04HMS2
C30
C29
C27
C28
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
- AN-UHF-128 -
ML2
W=2.0
C32
L5
ML2
Via
Via
7Via holes
Via
Via
Via
Via
Via
ML2
er=4.7 , TanD=0.018@1GHz
ML2
ML1
C21
ML1 ML1 ML2
Source
Electrode1
RD70HUF2
R6
C35
Via
1Via holes
W=4.6 W=3.6
ML1 ML1
W=5.0 W=4.4
R2
C15
Via
Via
Via
C39
ML1
W=4.7
W=4.7
W=2.0
R1
ML1
Board material ： Glass Epoxy Substrate-
Micro Strip Line Substrate Thickness ：
ML1,T=0.2mm,ML2,T=1.1mm
Via Hole Dimensions,Diameter=0.8mm Length=1.6mm
UNIT ： W[mm]
C22
ML1 ML1
W=4.6 W=3.6
ML1 ML1
W=5.0 W=4.4
C16
Via
C6
ML2
C5
Source
Electrode2
R7
C36
Via
1Via holes
ML2
L3
ML2
C4
L2
C33
Gate Bias1
Gate Bias2
W=2.0 C1 L1
C3
ML2 ML2
ML2
RF-in
Application Note for Silicon RF Power Semiconductors
3/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
No.
Description
P/N
Qty
Manufacturer
Tr1MOSFET
RD04HMS2
1
Mitsubishi Electric Corporation
Tr2MOSFET
RD70HUF2
1
Mitsubishi Electric Corporation
No.
Description
P/N
Qty
Manufacturer
Capacitance
Size
Remarks
C1100
pF
160850V
GRM1882C1H101JA01D
1
MURATA MANUFACTURING CO.
C26.2
pF
1608
Hi-Q
100
V
GQM1882C2A6R2CB01D
1
MURATA MANUFACTURING CO.
C322
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C433
pF
1608
Hi-Q50V
GQM1882C1H330JB01D
1
MURATA MANUFACTURING CO.
C524
pF
1608
Hi-Q50V
GQM1882C1H240JB01D
1
MURATA MANUFACTURING CO.
C616
pF
1608
Hi-Q50V
GQM1882C1H160JB01D
1
MURATA MANUFACTURING CO.
C7100
pF
160850V
GRM1882C1H101JA01D
1
MURATA MANUFACTURING CO.
C8100
pF
160850V
GRM1882C1H101JA01D
1
MURATA MANUFACTURING CO.
C922
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1022
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1122
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1222
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1322
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1422
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C15910
pF
201250V
GRM2162C1H911JA01D
1
MURATA MANUFACTURING CO.
C16910
pF
201250V
GRM2162C1H911JA01D
1
MURATA MANUFACTURING CO.
C17100
pF
2012
Hi-Q
250
V
GQM2195C2E101JB12D
1
MURATA MANUFACTURING CO.
C18100
pF
2012
Hi-Q
250
V
GQM2195C2E101JB12D
1
MURATA MANUFACTURING CO.
C19100
pF
2012
Hi-Q
250
V
GQM2195C2E101JB12D
1
MURATA MANUFACTURING CO.
C20100
pF
2012
Hi-Q
250
V
GQM2195C2E101JB12D
1
MURATA MANUFACTURING CO.
C2133
pF
2012
Hi-Q
250
V
GQM2195C2E330JB12D
1
MURATA MANUFACTURING CO.
C2233
pF
2012
Hi-Q
250
V
GQM2195C2E330JB12D
1
MURATA MANUFACTURING CO.
C2343
pF
2012
Hi-Q
250
V
GQM2195C2E430JB12D
1
MURATA MANUFACTURING CO.
C2443
pF
2012
Hi-Q
250
V
GQM2195C2E430JB12D
1
MURATA MANUFACTURING CO.
C2518
pF
2012
Hi-Q
250
V
GQM2195C2E180JB12D
1
MURATA MANUFACTURING CO.
C2618
pF
2012
Hi-Q
250
V
GQM2195C2E180JB12D
1
MURATA MANUFACTURING CO.
C273
pF
2012
Hi-Q
250
V
GQM2195C2E3R0CB12D
1
MURATA MANUFACTURING CO.
C283
pF
2012
Hi-Q
250
V
GQM2195C2E3R0CB12D
1
MURATA MANUFACTURING CO.
C293
pF
2012
Hi-Q
250
V
GQM2195C2E3R0CB12D
1
MURATA MANUFACTURING CO.
C303
pF
2012
Hi-Q
250
V
GQM2195C2E3R0CB12D
1
MURATA MANUFACTURING CO.
C312.2
pF
2012
Hi-Q
250
V
GQM2195C2E2R2CB12D
1
MURATA MANUFACTURING CO.
C32330
pF
3216
200
V
GRM31M2C2D331JY21B
1
MURATA MANUFACTURING CO.
C3310000
pF
160850V
GRM188B11H103KA01
1
MURATA MANUFACTURING CO.
C341000
pF
160850V
GRM1882C1H102JA01
1
MURATA MANUFACTURING CO.
C351000
pF
160850V
GRM1882C1H102JA01
1
MURATA MANUFACTURING CO.
C361000
pF
160850V
GRM1882C1H102JA01
1
MURATA MANUFACTURING CO.
C3722
μF
-50V
H1002
1
NICHICON Corporation
C3810000
pF
160850V
GRM188B11H103KA01
1
MURATA MANUFACTURING CO.
C391000
pF
160850V
GRM1882C1H102JA01
1
MURATA MANUFACTURING CO.
C40220
μF
-35V
EEUFC1V221
1
Panasonic Corporation
C41910
pF
201250V
GRM2162C1H911JA01D
1
MURATA MANUFACTURING CO.
C42910
pF
201250V
GRM2162C1H911JA01D
1
MURATA MANUFACTURING CO.
2. Component List and Standard Deliverable
- Component List
- AN-UHF-128 -
Application Note for Silicon RF Power Semiconductors
4/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
* Inductor of Rolling Coil measurement condition : f=100MHz
No.
Description
P/N
Qty
Manufacturer
Remarks
Inductance
Diameter
WireΦInside
Φ
T/N of coils
L112
nH *
0.23mm1.1mm3
2303A
1
YC Corporation Co.,Ltd.
Enameled wire
L28
nH *
0.23mm1.1mm2
2302S
1
YC Corporation Co.,Ltd.
Enameled wire
L38
nH *
0.23mm1.1mm2
2302S
1
YC Corporation Co.,Ltd.
Enameled wire
L437
nH *
0.40mm1.6mm7
4007C
1
YC Corporation Co.,Ltd.
Enameled wire
L525
nH *
0.80mm2.2mm5
8005C
1
YC Corporation Co.,Ltd.
Enameled wire
No.
Description
P/N
Qty
Manufacturer
Resistance
Size
R
147ohm
1608
RPC05N470J
1
TAIYOSHA ELECTRIC CO.
R22.2
ohm
2012
RPC10T2R2J
1
TAIYOSHA ELECTRIC CO.
R3100
ohm
2012
RPC10T101J
1
TAIYOSHA ELECTRIC CO.
R4100
ohm
2012
RPC10T101J
1
TAIYOSHA ELECTRIC CO.
R
5
3900
ohm
1608
RPC05T392J
1
TAIYOSHA ELECTRIC CO.
R
6
2700
ohm
1608
RPC05T272J
1
TAIYOSHA ELECTRIC CO.
R
7
2700
ohm
1608
RPC05T272J
1
TAIYOSHA ELECTRIC CO.
No.
Description
P/N
Qty
Manufacturer
Pb
PCB
MS3A0208
1
Homebuilt
OPTION
Rc
SMA
female connector
PAF-S00-002
2
GIGALANE Corporation
Bc1Bias connector
red color
TM-605R
2
MSK Corporation
Bc2Bias connector
black color
TM-605B
2
MSK Corporation
Pe
Aluminum pedestal
-1Homebuilt
Pd
Thermal Silicon Compound
G746
-
Shin-Etsu Chemical Co.,Ltd
Cu1Copper plate 2.8 x 1.8 x 0.4t (mm)
-1Homebuilt
Conducting wire
-6Homebuilt
Screw
M3-2-Screw
M2.6-10-Screw
M2-10
-
Evaluation Board assembled with all the component
PCB (raw board)
- AN-UHF-128 -
- Standard Deliverable
TYPE1
TYPE2
Application Note for Silicon RF Power Semiconductors
5/18
3. PCB Layout
TOP VIEW (Layer 1)
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
- AN-UHF-128 -
BOARD OUTLINE: 82.5*60.0(mm)
BOTTOM VIEW (Layer 6), Perspective through Top View
Application Note for Silicon RF Power Semiconductors
6/18
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