APPLICATION NOTE
SUBJECT: RD04HMS2 & RD70HUF2 two-stage amplifier at f=450-530MHz.(Vdd=12.5V)
Features:
- The evaluation board for RD04HMS2 & RD70HUF2 two-stage amplifier
- Frequency: 450-530MHz
- Vdd: 12.5V
- Input power: 0.2W
- Output power: 72-90W
Silicon RF Power Semiconductors
Document NO. AN-UHF-128
Date :18thAug. 2011
Prepared : S.Nakatsuka
S.Kametani
Confirmed :T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Quiescent Current: RD04HMS2 ; 0.1A, RD70HUF2 ; 1A
- Operating Current: 10-13A
- Surface-mounted RF power amplifier structure
PCB L=82.5mm W=60.0mm
Application Note for Silicon RF Power Semiconductors
1/18
Contents
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
- AN-UHF-128 -
Page
1. Equivalent Circuitry ------------------------------------------------------------
2. Component List and Standard Deliverable -------------------------------------
3. PCB Layout -----------------------------------------------------------------------
4. Standard Land Pattern Dimensions -----------------------------------------
5. Typical RF Characteristics ---------------------------------------------------5-1. Frequency characteristics ------------------------------------------
5-2. Pout vs. Pin characteristics --------------------------------------------
5-3. Pout vs. Vdd characteristics ----------------------------------------5-4. Pout vs. Vgg characteristics --------------------------------------------------
10
10
12
15
17
3
4
6
9
Application Note for Silicon RF Power Semiconductors
2/18
1. Equivalent Circuitry
C2
RF-OUT
W=2.0
W=2.0
W=2.0
W=2.0
C38
C7
C8
ML 1C9ML1
C10
C11
C13
C12
C14
C18R3C17
C20
C19
4Via holesL4R4
R5
Source
Electrode4
Source
Electrode3
W=1.8
W=1.3
W=1.8
W=1.3
Center Source
Electrode
C24
C26
C23
C25
C31
W=1.9
W=2.0
C40
C42
Drain Bias
C34
C37
C41
RD04HMS2
C30
C29
C27
C28
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
- AN-UHF-128 -
ML2
W=2.0
C32
L5
ML2
Via
Via
7Via holes
Via
Via
Via
Via
Via
ML2
er=4.7 , TanD=0.018@1GHz
ML2
ML1
C21
ML1 ML1 ML2
Source
Electrode1
RD70HUF2
R6
C35
Via
1Via holes
W=4.6 W=3.6
ML1 ML1
W=5.0 W=4.4
R2
C15
Via
Via
Via
C39
ML1
W=4.7
W=4.7
W=2.0
R1
ML1
Board material ： Glass Epoxy Substrate-
Micro Strip Line Substrate Thickness ：
ML1,T=0.2mm,ML2,T=1.1mm
Via Hole Dimensions,Diameter=0.8mm Length=1.6mm
UNIT ： W[mm]
C22
ML1 ML1
W=4.6 W=3.6
ML1 ML1
W=5.0 W=4.4
C16
Via
C6
ML2
C5
Source
Electrode2
R7
C36
Via
1Via holes
ML2
L3
ML2
C4
L2
C33
Gate Bias1
Gate Bias2
W=2.0 C1 L1
C3
ML2 ML2
ML2
RF-in
Application Note for Silicon RF Power Semiconductors
3/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
No.
Description
P/N
Qty
Manufacturer
Tr1MOSFET
RD04HMS2
1
Mitsubishi Electric Corporation
Tr2MOSFET
RD70HUF2
1
Mitsubishi Electric Corporation
No.
Description
P/N
Qty
Manufacturer
Capacitance
Size
Remarks
C1100
pF
160850V
GRM1882C1H101JA01D
1
MURATA MANUFACTURING CO.
C26.2
pF
1608
Hi-Q
100
V
GQM1882C2A6R2CB01D
1
MURATA MANUFACTURING CO.
C322
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C433
pF
1608
Hi-Q50V
GQM1882C1H330JB01D
1
MURATA MANUFACTURING CO.
C524
pF
1608
Hi-Q50V
GQM1882C1H240JB01D
1
MURATA MANUFACTURING CO.
C616
pF
1608
Hi-Q50V
GQM1882C1H160JB01D
1
MURATA MANUFACTURING CO.
C7100
pF
160850V
GRM1882C1H101JA01D
1
MURATA MANUFACTURING CO.
C8100
pF
160850V
GRM1882C1H101JA01D
1
MURATA MANUFACTURING CO.
C922
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1022
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1122
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1222
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1322
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1422
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C15910
pF
201250V
GRM2162C1H911JA01D
1
MURATA MANUFACTURING CO.
C16910
pF
201250V
GRM2162C1H911JA01D
1
MURATA MANUFACTURING CO.
C17100
pF
2012
Hi-Q
250
V
GQM2195C2E101JB12D
1
MURATA MANUFACTURING CO.
C18100
pF
2012
Hi-Q
250
V
GQM2195C2E101JB12D
1
MURATA MANUFACTURING CO.
C19100
pF
2012
Hi-Q
250
V
GQM2195C2E101JB12D
1
MURATA MANUFACTURING CO.
C20100
pF
2012
Hi-Q
250
V
GQM2195C2E101JB12D
1
MURATA MANUFACTURING CO.
C2133
pF
2012
Hi-Q
250
V
GQM2195C2E330JB12D
1
MURATA MANUFACTURING CO.
C2233
pF
2012
Hi-Q
250
V
GQM2195C2E330JB12D
1
MURATA MANUFACTURING CO.
C2343
pF
2012
Hi-Q
250
V
GQM2195C2E430JB12D
1
MURATA MANUFACTURING CO.
C2443
pF
2012
Hi-Q
250
V
GQM2195C2E430JB12D
1
MURATA MANUFACTURING CO.
C2518
pF
2012
Hi-Q
250
V
GQM2195C2E180JB12D
1
MURATA MANUFACTURING CO.
C2618
pF
2012
Hi-Q
250
V
GQM2195C2E180JB12D
1
MURATA MANUFACTURING CO.
C273
pF
2012
Hi-Q
250
V
GQM2195C2E3R0CB12D
1
MURATA MANUFACTURING CO.
C283
pF
2012
Hi-Q
250
V
GQM2195C2E3R0CB12D
1
MURATA MANUFACTURING CO.
C293
pF
2012
Hi-Q
250
V
GQM2195C2E3R0CB12D
1
MURATA MANUFACTURING CO.
C303
pF
2012
Hi-Q
250
V
GQM2195C2E3R0CB12D
1
MURATA MANUFACTURING CO.
C312.2
pF
2012
Hi-Q
250
V
GQM2195C2E2R2CB12D
1
MURATA MANUFACTURING CO.
C32330
pF
3216
200
V
GRM31M2C2D331JY21B
1
MURATA MANUFACTURING CO.
C3310000
pF
160850V
GRM188B11H103KA01
1
MURATA MANUFACTURING CO.
C341000
pF
160850V
GRM1882C1H102JA01
1
MURATA MANUFACTURING CO.
C351000
pF
160850V
GRM1882C1H102JA01
1
MURATA MANUFACTURING CO.
C361000
pF
160850V
GRM1882C1H102JA01
1
MURATA MANUFACTURING CO.
C3722
μF
-50V
H1002
1
NICHICON Corporation
C3810000
pF
160850V
GRM188B11H103KA01
1
MURATA MANUFACTURING CO.
C391000
pF
160850V
GRM1882C1H102JA01
1
MURATA MANUFACTURING CO.
C40220
μF
-35V
EEUFC1V221
1
Panasonic Corporation
C41910
pF
201250V
GRM2162C1H911JA01D
1
MURATA MANUFACTURING CO.
C42910
pF
201250V
GRM2162C1H911JA01D
1
MURATA MANUFACTURING CO.
2. Component List and Standard Deliverable
- Component List
- AN-UHF-128 -
Application Note for Silicon RF Power Semiconductors
4/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
* Inductor of Rolling Coil measurement condition : f=100MHz
No.
Description
P/N
Qty
Manufacturer
Remarks
Inductance
Diameter
WireΦInside
Φ
T/N of coils
L112
nH *
0.23mm1.1mm3
2303A
1
YC Corporation Co.,Ltd.
Enameled wire
L28
nH *
0.23mm1.1mm2
2302S
1
YC Corporation Co.,Ltd.
Enameled wire
L38
nH *
0.23mm1.1mm2
2302S
1
YC Corporation Co.,Ltd.
Enameled wire
L437
nH *
0.40mm1.6mm7
4007C
1
YC Corporation Co.,Ltd.
Enameled wire
L525
nH *
0.80mm2.2mm5
8005C
1
YC Corporation Co.,Ltd.
Enameled wire
No.
Description
P/N
Qty
Manufacturer
Resistance
Size
R
147ohm
1608
RPC05N470J
1
TAIYOSHA ELECTRIC CO.
R22.2
ohm
2012
RPC10T2R2J
1
TAIYOSHA ELECTRIC CO.
R3100
ohm
2012
RPC10T101J
1
TAIYOSHA ELECTRIC CO.
R4100
ohm
2012
RPC10T101J
1
TAIYOSHA ELECTRIC CO.
R
5
3900
ohm
1608
RPC05T392J
1
TAIYOSHA ELECTRIC CO.
R
6
2700
ohm
1608
RPC05T272J
1
TAIYOSHA ELECTRIC CO.
R
7
2700
ohm
1608
RPC05T272J
1
TAIYOSHA ELECTRIC CO.
No.
Description
P/N
Qty
Manufacturer
Pb
PCB
MS3A0208
1
Homebuilt
OPTION
Rc
SMA
female connector
PAF-S00-002
2
GIGALANE Corporation
Bc1Bias connector
red color
TM-605R
2
MSK Corporation
Bc2Bias connector
black color
TM-605B
2
MSK Corporation
Pe
Aluminum pedestal
-1Homebuilt
Pd
Thermal Silicon Compound
G746
-
Shin-Etsu Chemical Co.,Ltd
Cu1Copper plate 2.8 x 1.8 x 0.4t (mm)
-1Homebuilt
Conducting wire
-6Homebuilt
Screw
M3-2-Screw
M2.6-10-Screw
M2-10
-
Evaluation Board assembled with all the component
PCB (raw board)
- AN-UHF-128 -
- Standard Deliverable
TYPE1
TYPE2
Application Note for Silicon RF Power Semiconductors
5/18
3. PCB Layout
TOP VIEW (Layer 1)
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
- AN-UHF-128 -
BOARD OUTLINE: 82.5*60.0(mm)
BOTTOM VIEW (Layer 6), Perspective through Top View
Application Note for Silicon RF Power Semiconductors
6/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
Internal Layer (Layer 2) , Perspective Through Top View
Internal Layer (Layer 3) , Perspective Through Top View
- AN-UHF-128 -
BOARD OUTLINE: 82.5*60.0(mm)
Internal Layer (Layer 4) , Perspective Through Top View
Application Note for Silicon RF Power Semiconductors
7/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
Nomial Total Completed Thickness ( included resist coating ) : 1.6mm
Layer
6(Copper T
:
43μm with gold plating
)
Internal Layer (Layer 5) , Perspective Through Top View
- AN-UHF-128 -
BOARD OUTLINE: 82.5*60.0(mm)
Substrate Condition
200μm
300μm
300μm
300μm
200μm
er: 4.7, TanD:0.018 @1GHz
Prepreg
Core
Prepreg
Core
Prepreg
Layer1( Copper T: 43μm with gold plating )
Layer2( Copper T: 35μm )
Layer3( Copper T: 35μm )
Layer4( Copper T: 35μm )
Layer5( Copper T: 35μm )
Material: MCL-E-679G(R), Hitachi Chemical Co.
4. Standard Land Pattern Dimensions
Application Note for Silicon RF Power Semiconductors
8/18
4-1. RD70HUF2
4.7
3.4
0.8
8.0
8.3
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
- AN-UHF-128 -
6.52.8 13.54.9 3.5
9
.
4
=
.
a
i
D
3.3
1.2
18.0
19.7
23.4 25.4
4-2. RD04HMS2
3.8
3.2
4.1
UNIT: mm
0.5
0.4
60°
0.4
REGULAR TRIANGLE ARRANGEMENT
2.0
UNIT: mm
5. Typical RF Characteristics
Application Note for Silicon RF Power Semiconductors
THROUGH HOLE
9/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
Pin=0.1W
Pin=0.1W
Pin=0.1W
Pin=0.1W
5-1. Frequency characteristics
@ Pin Control (@Pi=0.2W, 0.1W), Vdd=12.5V, Idq=1.1A (Vgg=2.61V)
- AN-UHF-128 -
100.0
90.0
80.0
70.0
Po[W]
60.0
50.0
40.0
450 460 470 480 490 500 510 520 530
f[MHz]
65
60
55
ηT[%]
50
Pin=0.2W
Pin=0.2W
30
29
28
27
26
25
Gp[dB]
24
23
22
21
20
450 460 470 480 490 500 510 520 530
f[MHz]
0
-10
-20
Bc]
ｄ
-30
2fo[
-40
Pin=0.1W
Pin=0.2W
45
40
450 460 470 480 490 500 510 520 530
f[MHz]
16.0
15.0
14.0
13.0
12.0
11.0
Idd[A]
10.0
9.0
8.0
7.0
6.0
450 460 470 480 490 500 510 520 530
f[MHz]
Pin=0.2W
-50
-60
450 460 470 480 490 500 510 520 530
f[MHz]
0.0
-2.0
-4.0
-6.0
R.L.[dB]
-8.0
-10.0
-12.0
450 460 470 480 490 500 510 520 530
Pin=0.2W
Pin=0.1W
f[MHz]
Pin=0.2W
Application Note for Silicon RF Power Semiconductors
10/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
5-1-1. Frequency characteristics data
- AN-UHF-128 -
@ Pi=0.2W, Vdd=12.5V, Idq=1.1A
(Vgg=2.61V, RD04HMS2 ; 0.1A, RD70HUF2 ; 1A)
f Po Po Gp Idd ηd P.A.E. 2fo 3fo R.L.
[MHz] [dBm] [W] [dB] [A] [%] [%] [dBc] [dBc] [-dB]
450 49.30 85.1 26.3 12.52 54.9 54.8 -30.5 -59.7 -8.9
460 49.44 88.0 26.4 12.50 56.9 56.7 -35.2 -61.2 -8.7
470 49.53 89.7 26.6 12.61 57.4 57.3 -38.5 -57.8 -9.0
480 49.58 90.8 26.6 12.78 57.4 57.3 -40.7 -56.7 -9.4
490 49.58 90.8 26.6 12.82 57.3 57.1 -40.8 -53.7 -9.6
500 49.48 88.7 26.5 12.56 57.0 56.9 -39.2 -61.8 -9.7
510 49.23 83.8 26.2 12.05 56.0 55.9 -36.0 -59.2 -10.0
520 48.89 77.4 25.9 11.45 54.4 54.3 -38.3 -58.3 -9.9
530 48.62 72.8 25.6 10.63 55.0 54.8 -39.8 -55.8 -9.2
@ Pi=0.1W, Vdd=12.5V, Idq=1.1A
(Vgg=2.61V, RD04HMS2 ; 0.1A, RD70HUF2 ; 1A)
f Po Po Gp Idd ηd P.A.E. 2fo 3fo R.L.
[MHz] [dBm] [W] [dB] [A] [%] [%] [dBc] [dBc] [-dB]
450 49.08 81.0 29.1 12.10 54.0 53.9 -30.2 -59.3 -9.0
460 49.12 81.7 29.1 11.90 55.4 55.3 -34.5 <-62 -9.1
470 49.09 81.1 29.1 11.77 55.5 55.4 -37.8 -55.2 -9.4
480 48.95 78.4 28.9 11.52 54.8 54.7 -39.8 <-62 -9.5
490 48.70 74.2 28.7 11.10 53.8 53.7 -39.7 -58.8 -9.3
500 48.46 70.1 28.4 10.63 52.9 52.9 -38.5 <-62 -9.3
510 48.14 65.2 28.1 10.11 51.7 51.6 -35.3 -57.2 -9.7
520 47.69 58.8 27.7 9.48 49.6 49.5 -38.5 -56.3 -9.8
530 47.33 54.0 27.3 8.79 49.1 49.1 -39.8 -57.0 -9.1
Application Note for Silicon RF Power Semiconductors
11/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
5-2. Pout vs. Pin characteristics
@ Vdd=12.5V, Idq=1.1A (Vgg=2.61V), f=450MHz, 490MHz, 530MHz
- AN-UHF-128 -
100
90
@f=450MHz
80
70
60
50
Pout[W]
40
30
20
10
0
0.00 0.05 0.10 0.15 0.20 0.25 0.30
40
38
36
@f=450MHz
34
32
@f=425MHz
30
Gp[dB]
28
26
@f=530MHz
24
22
20
5.0 10.0 15.0 20.0 25.0
@f=490MHz
@f=530MHz
Pin[W]
Pin[dBm]
55
@f=450MHz
50
45
40
35
Pout[dBm]
30
25
20
5.0 10.0 15.0 20.0 25.0
14
12
10
8
Idd[A]
6
4
2
0
5.0 10.0 15.0 20.0 25.0
@f=425MHz
@f=450MHz
@f=490MHz
@f=530MHz
Pin[dBm]
@f=530MHz
Pin[dBm]
60
50
@f=490MHz
40
@f=450MHz
30
ηd[%]
20
10
0
5.0 10.0 15.0 20.0 25.0
@f=530MHz
Pin[dBm]
Application Note for Silicon RF Power Semiconductors
12/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
5-2-2. Pout vs. Pin characteristics data
- AN-UHF-128 -
[Conditions ; Vdd=12.5V, Idq=1.1A
(Vgg=2.61V, RD04HMS2 ; 0.1A, RD70HUF2 ; 1A)
@ f=450MHz
Pin Pin Po Po Gp Idd ηd 2fo 3fo R.L.
[dBm] [W] [dBm] [W] [dB] [A] [%] [dBc] [dBc] [-dB]
5.0 0.003 36.64 4.61 31.64 2.70 13.4 -25.5 -57.3 -8.5
6.0 0.004 37.76 5.97 31.75 3.06 15.4 -25.7 -54.5 -8.4
7.0 0.005 38.84 7.65 31.83 3.45 17.5 -25.7 -56.5 -8.4
8.0 0.006 39.92 9.82 31.90 3.89 19.9 -25.5 -47.2 -8.5
9.1 0.008 41.01 12.62 31.93 4.42 22.5 -25.7 -55.7 -8.4
10.2 0.010 42.09 16.19 31.92 5.00 25.6 -25.7 -49.2 -8.4
11.0 0.013 43.15 20.66 32.11 5.66 28.9 -25.7 -56.7 -8.3
12.0 0.016 44.20 26.30 32.17 6.40 32.6 -25.7 -57.5 -8.3
13.0 0.020 45.18 32.95 32.17 7.19 36.4 -25.8 -56.8 -8.4
14.0 0.025 46.16 41.34 32.15 8.12 40.6 -26.2 -34.0 -8.4
15.0 0.032 47.00 50.14 32.00 9.05 44.3 -27.0 -56.7 -8.5
16.0 0.040 47.73 59.26 31.74 9.98 47.6 -27.8 -56.3 -8.7
17.0 0.050 48.31 67.82 31.32 10.83 50.3 -28.8 -47.5 -8.8
18.0 0.063 48.65 73.36 30.69 11.40 51.8 -20.7 -36.3 -8.9
19.0 0.080 48.85 76.73 29.84 11.75 52.6 -30.2 -44.3 -9.0
20.0 0.100 48.96 78.71 28.96 11.96 53.0 -30.3 -48.8 -9.0
21.0 0.125 49.04 80.17 28.07 12.12 53.4 -30.7 -58.7 -9.1
22.0 0.157 49.10 81.23 27.13 12.25 53.5 -30.8 -58.5 -9.0
23.0 0.200 49.15 82.28 26.15 12.37 53.7 -30.8 -57.5 -9.0
24.0 0.252 49.19 83.06 25.18 12.47 53.8 -31.0 -55.0 -8.9
25.0 0.314 49.23 83.71 24.26 12.55 53.8 -31.2 -57.0 -8.9
]
@ f=490MHz
Pin Pin Po Po Gp Idd ηd 2fo 3fo R.L.
[dBm] [W] [dBm] [W] [dB] [A] [%] [dBc] [dBc] [-dB]
5.0 0.003 34.00 2.51 29.00 2.07 9.5 -37.7 -54.7 -9.4
6.0 0.004 35.09 3.23 29.07 2.31 11.0 -37.3 -54.5 -9.3
7.0 0.005 36.15 4.12 29.14 2.56 12.6 -37.3 -56.8 -9.4
8.0 0.006 37.18 5.22 29.19 2.84 14.4 -37.5 -58.0 -9.3
9.0 0.008 38.28 6.74 29.27 3.21 16.5 -37.0 -57.5 -9.2
9.9 0.010 39.34 8.59 29.47 3.60 18.8 -37.2 <-60 -9.0
11.1 0.013 40.43 11.04 29.37 4.06 21.5 -37.0 -59.2 -9.2
12.1 0.016 41.53 14.24 29.45 4.59 24.5 -36.7 <-60 -9.2
13.0 0.020 42.64 18.37 29.61 5.20 27.9 -36.5 -56.0 -9.0
14.0 0.025 43.65 23.20 29.68 5.84 31.5 -32.7 -53.2 -9.0
15.0 0.031 44.66 29.21 29.69 6.61 35.1 -36.7 <-60 -8.9
16.0 0.040 45.72 37.29 29.72 7.45 39.9 -36.8 -55.5 -8.9
17.0 0.050 46.60 45.71 29.64 8.32 43.9 -37.2 <-60 -8.9
18.0 0.063 47.39 54.79 29.42 9.24 47.4 -37.8 -58.2 -9.0
19.0 0.080 48.04 63.72 29.03 10.16 50.3 -38.7 <-60 -9.1
20.0 0.100 48.54 71.50 28.55 10.95 52.5 -39.5 <-60 -9.3
21.0 0.126 48.93 78.13 27.93 11.66 54.0 -40.0 <-60 -9.4
22.0 0.159 49.21 83.31 27.19 12.22 55.0 -40.7 -58.3 -9.6
23.0 0.199 49.41 87.23 26.42 12.65 55.7 -40.8 <-60 -9.6
24.0 0.251 49.53 89.68 25.53 12.95 55.9 -41.2 <-60 -9.5
25.0 0.317 49.60 91.25 24.59 13.14 56.1 -41.0 <-60 -9.4
Application Note for Silicon RF Power Semiconductors
13/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
@ f=530MHz
Pin Pin Po Po Gp Idd ηd 2fo 3fo R.L.
[dBm] [W] [dBm] [W] [dB] [A] [%] [dBc] [dBc] [-dB]
5.0 0.003 31.10 1.29 26.10 1.49 6.8 -40.5 -50.7 -9.8
6.0 0.004 32.18 1.65 26.21 1.64 7.9 -40.8 -51.2 -9.8
7.0 0.005 33.32 2.15 26.31 1.82 9.3 -40.0 -53.3 -9.7
8.0 0.006 34.43 2.77 26.43 2.03 10.7 -39.5 -54.3 -9.7
9.0 0.008 35.57 3.61 26.56 2.28 12.5 -39.3 -55.3 -9.7
10.0 0.010 36.71 4.69 26.72 2.57 14.4 -39.0 -55.7 -9.6
11.1 0.013 37.90 6.17 26.84 2.92 16.7 -39.0 -57.8 -9.6
12.0 0.016 39.05 8.03 27.07 3.30 19.2 -39.0 -58.5 -9.5
12.9 0.020 40.23 10.55 27.29 3.77 22.1 -39.0 -59.7 -9.4
14.0 0.025 41.40 13.79 27.42 4.29 25.4 -39.0 -59.2 -9.4
15.0 0.031 42.54 17.94 27.57 4.89 29.1 -38.7 -56.8 -9.3
16.0 0.040 43.69 23.39 27.68 5.58 33.3 -38.7 <-60 -9.3
17.0 0.050 44.77 29.98 27.78 6.33 37.6 -38.7 <-60 -9.2
18.0 0.063 45.77 37.80 27.76 7.16 42.1 -38.7 -59.5 -9.1
19.0 0.079 46.63 46.03 27.63 7.99 46.0 -39.2 <-60 -9.1
20.0 0.099 47.31 53.78 27.34 8.76 49.2 -39.5 <-60 -9.1
21.0 0.126 47.88 61.33 26.87 9.49 51.9 -39.8 -59.3 -9.1
22.0 0.158 48.30 67.56 26.32 10.10 53.8 -39.8 <-60 -9.2
23.0 0.199 48.61 72.59 25.62 10.61 55.0 -39.8 -59.2 -9.1
24.0 0.252 48.85 76.68 24.84 11.05 55.9 -39.8 <-60 -9.1
25.0 0.317 49.01 79.68 24.00 11.39 56.4 -39.8 <-60 -9.1
- AN-UHF-128 -
Application Note for Silicon RF Power Semiconductors
14/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
5-3. Pout vs. Vdd characteristics
@ Pi=0.2W (=23dBm), Idq=1.1A(Vgg=2.61V), f=450MHz, 490MHz, 530MHz
- AN-UHF-128 -
100
90
80
70
60
50
Po[W]
40
30
20
10
0
2 3 4 5 6 7 8 9 10 11 12 13 14
30
@f=490MHz
25
20
@f=450MHz
@f=490MHz
Vdd[V]
@f=530MHz
@f=530MHz
55
@f=490MHz
50
45
@f=530MHz
Po[ｄBm]
40
35
30
2 3 4 5 6 7 8 9 10 11 12 13 14
14.0
12.0
10.0
8.0
@f=450MHz
Vdd[V]
@f=490MHz
Gp[ｄB]
15
10
5
2 3 4 5 6 7 8 9 10 11 12 13 14
60
55
50
45
ηd[%]
40
35
30
2 3 4 5 6 7 8 9 10 11 12 13 14
@f=450MHz
Vdd[V]
@f=530MHz
@f=490MHz
@f=450MHz
Vdd[V]
Idd[A]
6.0
4.0
2.0
0.0
2 3 4 5 6 7 8 9 10 11 12 13 14
@f=450MHz
Vdd[V]
@f=530MHz
Application Note for Silicon RF Power Semiconductors
15/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
5-3-1. Pout vs. Vdd characteristics data
- AN-UHF-128 -
[Conditions ; Pi=0.2W (=23dBm), Idq=1.1A
(Vgg=2.61V, RD04HMS2 ; 0.1A, RD70HUF2 ; 1A)
@ f=450MHz
Vdd Idq Po Po Gp Idd ηd 2fo 3fo R.L.
[V] [A] [dBm] [W] [dB] [A] [%] [dBc] [dBc] [-dB]
1.9 0.540 30.7 1.2 7.7 1.56 38.7 -35.7 -51.7 -9.6
2.9 0.556 35.2 3.3 12.2 2.50 45.8 -33.7 -55.5 -9.6
3.9 0.572 38.3 6.8 15.3 3.51 49.7 -33.5 -47.3 -9.5
4.8 0.589 40.6 11.4 17.6 4.53 52.1 -33.2 -56.8 -9.4
5.8 0.607 42.4 17.4 19.4 5.58 53.7 -32.8 -59.0 -9.3
6.8 0.628 43.9 24.7 20.9 6.65 54.7 -32.5 -57.0 -9.1
7.7 0.651 45.2 33.0 22.2 7.71 55.3 -32.2 <-60 -9.0
8.7 0.675 46.3 42.5 23.3 8.78 55.6 -31.7 -57.5 -8.9
9.7 0.704 47.2 52.9 24.2 9.82 55.7 -31.5 -54.8 -8.8
10.6 0.733 48.0 63.7 25.0 10.81 55.4 -31.0 -57.2 -8.8
11.6 0.766 48.8 75.2 25.8 11.77 55.1 -30.7 -56.5 -8.8
12.6 0.805 49.4 87.5 26.4 12.70 54.8 -30.3 -53.0 -8.9
@ f=490MHz
Vdd Idq Po Po Gp Idd ηd 2fo 3fo R.L.
[V] [A] [dBm] [W] [dB] [A] [%] [dBc] [dBc] [-dB]
1.9 0.536 32.3 1.7 9.3 1.96 45.1 -49.2 -53.5 -8.5
2.9 0.553 36.4 4.4 13.4 3.00 50.6 -49.3 -57.2 -8.7
3.9 0.571 39.2 8.4 16.2 4.06 53.6 -47.2 -60.0 -8.9
4.8 0.588 41.4 13.6 18.3 5.10 55.5 -46.2 -57.0 -9.1
5.8 0.607 43.1 20.2 20.0 6.17 56.7 -45.2 -56.2 -9.2
6.8 0.627 44.5 28.1 21.5 7.22 57.5 -44.2 <-60 -9.3
7.7 0.650 45.7 36.9 22.7 8.24 58.0 -43.3 -56.8 -9.4
8.7 0.674 46.7 46.9 23.7 9.27 58.3 -42.7 <-60 -9.5
9.7 0.704 47.6 57.8 24.6 10.26 58.4 -42.2 -59.2 -9.5
10.6 0.733 48.4 69.5 25.5 11.23 58.4 -41.5 -56.8 -9.6
11.6 0.764 49.1 81.5 26.1 12.14 58.0 -41.2 <-60 -9.6
12.6 0.802 49.7 93.9 26.7 12.99 57.5 -40.7 -57.8 -9.5
]
@ f=530MHz
Vdd Idq Po Po Gp Idd ηd 2fo 3fo R.L.
[V] [A] [dBm] [W] [dB] [A] [%] [dBc] [dBc] [-dB]
1.9 0.527 32.9 2.0 9.9 2.08 48.8 -45.0 -53.2 -8.7
2.9 0.545 36.8 4.7 13.8 3.11 52.7 -43.5 -55.2 -8.8
3.9 0.564 39.4 8.7 16.4 4.07 55.0 -43.2 -55.5 -8.9
4.8 0.582 41.3 13.5 18.3 4.97 56.4 -42.5 <-60 -9.0
5.8 0.601 42.9 19.4 19.9 5.83 57.3 -41.7 <-60 -9.1
6.8 0.623 44.2 26.1 21.2 6.64 58.0 -41.2 -59.0 -9.2
7.7 0.645 45.2 33.5 22.2 7.41 58.3 -40.7 -58.8 -9.2
8.7 0.670 46.2 41.5 23.2 8.17 58.3 -40.3 <-60 -9.3
9.7 0.697 47.0 50.0 24.0 8.89 58.0 -40.2 <-60 -9.3
10.7 0.728 47.7 58.7 24.7 9.57 57.5 -40.0 -57.2 -9.3
11.7 0.759 48.3 67.7 25.3 10.24 56.7 -39.7 <-60 -9.2
12.6 0.795 48.8 76.3 25.8 10.89 55.5 -39.7 -56.7 -9.2
Application Note for Silicon RF Power Semiconductors
16/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
5-4. Pout vs. Vgg characteristics
@ Vdd=12.5V, Pi=0.2W (=23dBm), f=450MHz, 490MHz, 530MHz
- AN-UHF-128 -
120
@f=490MHz
100
80
@f=450MHz
60
Po[W]
40
@f=530MHz
20
0
1.5 2.0 2.5 3.0
Vgg[V]
Gp[dB]
28.0
26.0
24.0
22.0
20.0
18.0
@f=450MHz
@f=490MHz
@f=530MHz
50
49
48
47
46
45
Po[dBm]
44
43
42
41
40
1.5 2.0 2.5 3.0
16.0
14.0
12.0
10.0
8.0
Idd[A]
6.0
4.0
2.0
@f=490MHz
@f=450MHz
@f=530MHz
Vgg[V]
@f=490MHz
@f=450MHz
@f=530MHz
16.0
1.5 2.0 2.5 3.0
Vgg[V]
70
60
@f=450MHz
50
40
ηd[%]
30
20
10
0
1.5 2.0 2.5 3.0
@f=490MHz
@f=530MHz
Vgg[V]
0.0
1.5 2.0 2.5 3.0
Vgg[V]
4.0
3.5
3.0
2.5
2.0
Idq[A]
1.5
1.0
0.5
0.0
1.5 2.0 2.5 3.0
Vgg[V]
Application Note for Silicon RF Power Semiconductors
17/18
RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)
5-4-1. Pout vs. Vgg characteristics data
[Conditions ; Pi=0.2W (=23dBm), Vdd=12.5V
@ f=450MHz
Vgg Idq Po Po Gp Idd ηd 2fo 3fo R.L.
[V] [A] [dBm] [W] [dB] [A] [%] [dBc] [dBc] [-dB]
1.50 0.000 46.31 42.73 23.28 7.59 44.9 -22.7 -56.2 -9.3
1.60 0.000 46.69 46.71 23.67 8.05 46.3 -23.3 -58.5 -9.2
1.70 0.000 47.05 50.71 24.00 8.52 47.6 -23.8 -56.0 -9.2
1.80 0.000 47.37 54.53 24.36 8.96 48.7 -24.5 -57.7 -9.1
1.90 0.001 47.64 58.07 24.65 9.38 49.6 -25.2 -58.3 -9.0
2.00 0.001 47.93 62.10 24.90 9.84 50.6 -26.0 -48.2 -9.0
2.10 0.005 48.20 66.01 25.16 10.29 51.5 -26.5 -59.0 -8.9
2.20 0.017 48.42 69.45 25.42 10.69 52.2 -27.3 -59.7 -8.9
2.30 0.057 48.65 73.30 25.63 11.15 52.9 -28.2 -58.2 -8.8
2.40 0.168 48.86 76.92 25.86 11.58 53.5 -29.0 -56.8 -8.8
2.50 0.392 49.04 80.19 26.04 11.97 54.0 -29.7 -57.2 -8.8
2.60 0.825 49.22 83.58 26.21 12.39 54.4 -30.5 -59.0 -8.8
2.70 1.520 49.38 86.64 26.40 12.79 54.7 -31.3 -56.2 -8.7
2.80 2.438 49.52 89.44 26.54 13.17 54.9 -32.0 -57.7 -8.7
2.90 3.625 49.64 92.13 26.66 13.55 55.0 -32.5 -55.5 -8.7
- AN-UHF-128 -
@ f=490MHz
Vgg Idq Po Po Gp Idd ηd 2fo 3fo R.L.
[V] [A] [dBm] [W] [dB] [A] [%] [dBc] [dBc] [-dB]
1.50 0.000 44.27 26.74 21.27 5.69 37.3 -32.2 <-60 -9.1
1.60 0.000 45.35 34.26 22.35 6.54 41.6 -32.7 <-60 -9.1
1.70 0.000 46.23 41.97 23.23 7.35 45.4 -33.3 <-60 -9.1
1.80 0.001 46.96 49.65 23.95 8.18 48.4 -34.2 -57.7 -9.2
1.90 0.001 47.51 56.36 24.51 8.89 50.6 -35.3 <-60 -9.2
2.00 0.002 48.00 63.15 24.99 9.62 52.5 -36.0 <-60 -9.2
2.10 0.006 48.40 69.18 25.41 10.28 54.0 -37.2 <-60 -9.3
2.20 0.019 48.72 74.40 25.74 10.86 55.0 -38.2 <-60 -9.4
2.30 0.063 49.00 79.43 26.01 11.41 56.0 -39.0 -56.8 -9.5
2.40 0.176 49.24 83.89 26.22 11.93 56.6 -39.5 <-60 -9.5
2.50 0.402 49.41 87.23 26.42 12.35 57.0 -40.2 <-60 -9.6
2.60 0.853 49.56 90.36 26.56 12.75 57.2 -40.7 <-60 -9.6
2.70 1.548 49.69 93.11 26.68 13.12 57.3 -41.0 <-60 -9.5
2.80 2.471 49.79 95.34 26.78 13.45 57.3 -40.7 -55.2 -9.5
2.90 3.651 49.88 97.24 26.89 13.76 57.2 -41.2 -60.0 -9.4
@ f=530MHz
Vgg Idq Po Po Gp Idd ηd 2fo 3fo R.L.
[V] [A] [dBm] [W] [dB] [A] [%] [dBc] [dBc] [-dB]
1.50 0.000 40.18 10.41 17.12 3.51 23.4 -34.0 -56.3 -10.0
1.60 0.000 41.84 15.29 18.81 4.22 28.6 -34.5 -59.8 -9.9
1.70 0.000 43.26 21.20 20.25 4.98 33.7 -34.8 -56.3 -9.9
1.80 0.000 44.50 28.21 21.51 5.79 38.7 -35.5 -58.5 -9.8
1.90 0.000 45.44 35.00 22.44 6.52 42.7 -36.0 -57.2 -9.7
2.00 0.002 46.27 42.40 23.26 7.31 46.2 -36.8 -60.0 -9.6
2.10 0.006 46.92 49.20 23.91 8.05 48.8 -37.8 -60.0 -9.5
2.20 0.019 47.40 55.00 24.40 8.64 50.9 -38.5 <-60 -9.4
2.30 0.061 47.83 60.71 24.83 9.24 52.6 -38.8 -58.3 -9.4
2.40 0.169 48.18 65.76 25.17 9.79 53.8 -39.2 -59.2 -9.3
2.50 0.400 48.45 70.03 25.41 10.28 54.7 -39.5 -59.2 -9.3
2.60 0.831 48.65 73.23 25.63 10.65 55.2 -39.8 <-60 -9.2
2.70 1.541 48.84 76.50 25.81 11.03 55.8 -39.8 -58.7 -9.1
2.80 2.447 48.96 78.65 25.96 11.33 55.8 -39.8 -59.7 -9.1
2.90 3.635 49.07 80.68 26.08 11.62 55.9 -39.7 <-60 -9.0
Application Note for Silicon RF Power Semiconductors
18/18
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