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RD02MUS1B
User Manual
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User Manual
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MITSUBISHI RD00HVS1, RD02MUS1B User Manual

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APPLICATION NOTE
SUBJECT:
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2V (improved stability versions)
SUMMARY:
- Sample history: RD00HVS1: Lot number “551”
RD02MUS1B: Lot number “10ZAC-G”
Silicon RF Power Semiconductors
Document NO. AN-UHF-125 Date : 20 Prepared : H.Hiraoka, Y.Tanaka Confirmed : S.Kametani
(Taking charge of Silicon RF by
May. 2011
MIYOSHI Electronics)
- Evaluate conditions: (1) Frequency characteristics
@f=400MHz to 470MHz, Pin=5mW, Vdd=7.2V, Idq1=50mA (Vgg1 adj.),
Idq2=200mA(Vgg2 adj.)
(2) Pout vs. Pin characteristics
@f=400MHz to 470MHz, Vdd=7.2V, Idq1=50mA (Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
(3) Small Signal S parameter(S11,S22,S21)
@f=50MHz to 1500MHz, Vdd=7.2V, Idq1=50mA (Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- Results: Page 2 shows the typical frequency characteristics data @ Vdd=7.2V. Page 3-5 shows the typical Pout vs. Pin characteristics data @ Vdd=7.2V. Page 6 Small Signal S parameter.@ Vdd=7.2V. Page 7 shows the equivalent circuit.
Application Note for Silicon RF Power Semiconductors
1/7
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2V
Frequency characteristics
@Vdd=7.2V, Pin=5mW, Idq1=50mA(Vgg1 adj.), Idq=200mA(Vgg2 adj.)
- AN-UHF-125-
【@Vdd=7.2V,Idq1=50mA,Idq2=200mA,Pin=5mW】
3.0
2.5
2.0
Pout
Pout Idd ηt
90
80
70
1.5
ηt(%)
60
ηt
Pout(W),Idd(A)
1.0
0.5
Idd
50
40
0.0 390 400 410 420 430 440 450 460 470 480
Freq(MHz)
30
【@Vdd=7.2V,Idq1=50mA,Idq2=200mA,Pin=5mW】
0
-10
-20
R.L
R.L 2SP
-30
R.L(dB),2SP(dBc)
-40
-50
2SP
-60
390 400 410 420 430 440 450 460 470 480
Freq(MHz)
Application Note for Silicon RF Power Semiconductors
2/7
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2V
)
Pout vs. Pin characteristics @ f=400MHz, Vdd=7.2V, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- AN-UHF-125-
40
35
30
25
20
Pout(dBm),Gp(dB
15
10
5
@f=400MHz,Vdd=7.2V,Idq1=50mA,I d q2 =200mA
【
Gp
Pout Gp ηt
Pout
ηt
】
80
70
60
50
40
30
ηt(%)
20
10
0
-30 -25 -20 -15 -10 -5 0 5 10
0
Pin( dBm)
3.5
@f=400MHz,Vdd=7.2V,Idq1=50mA,Idq2=20 0mA
【
】
70
3.0
ηt
60
2.5
50
2.0
Pout(W),Idd(A)
1.5
Pout
Pout Idd ηt
40
30
ηt(%)
1.0 Idd
0.5
20
10
0.0
012345678910
Pin(mW)
0
Application Note for Silicon RF Power Semiconductors
3/7
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2V
)
Pout vs. Pin characteristics @ f=435MHz, Vdd=7.2V, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
@f=435MHz,Vdd=7.2V,Idq1=50mA,I d q2 =200mA
40
【
】
80
- AN-UHF-125-
35
70
30
25
20
Pout(dBm),Gp(dB
15
Pout Gp ηt
10
60
50
40
30
ηt(%)
20
5
10
0
-30 -25 -20 -15 -10 -5 0 5 10
Pin( dBm)
0
@f=435MHz,Vdd=7.2V,Idq1=50mA,Idq2=20 0mA
3.5
【
】
70
3.0
2.5
60
50
2.0
Pout(W),Idd(A)
1.5
Pout Idd ηt
40
30
ηt(%)
1.0
0.5
Remarks: “-“ is out of range.
20
10
0.0
012345678910
Pin(mW)
Application Note for Silicon RF Power Semiconductors
0
4/7
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2V
)
Pout vs. Pin characteristics @ f=470MHz, Vdd=7.2V, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- AN-UHF-125-
40
@f=470MHz,Vdd=7.2V,Idq1=50mA,Idq2=20 0mA
【
】
80
35
30
70
60
25
20
Pout(dBm),Gp(dB
15
Pout Gp ηt
10
5
50
40
30
ηt(%)
20
10
0
-30 -25 -20 -15 -10 -5 0 5 10
0
Pin( dBm)
@f=470MHz,Vdd=7.2V,Idq1=50mA,Idq2=20 0mA
3.5
【
】
70
3.0
2.5
60
50
2.0
Pout(W),Idd(A)
1.5
1.0
Pout Idd ηt
40
30
20
ηt(%)
0.5
Remarks: “-“ is out of range.
10
0.0 012345678910
Pin(mW)
0
Application Note for Silicon RF Power Semiconductors
5/7
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2V
- AN-UHF-125-
Small Signal S parameter @ Vdd=7.2V, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
S11 (f=50MHz-1.5GHz) S22 (f=50MHz-1.5GHz)
400MH
400MH
470MHz
S11 Log Mag S22 Log Mag
[dB]
20
15
10
5
0
-5
-10
-15
-20 0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
[MHz]
1400
1500
20
15
10
5
0
[dB]
-5
-10
-15
-20 0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
[MHz]
S21 Log Mag(broad band) S21 Log Mag(narrow band)
40 35 30 25 20 15 10
5 0
[dB]
-5
-10
-15
-20
-25
-30
-35
-40 0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
[MHz]
[dB]
40 35 30 25 20 15 10
5 0
-5
-10
-15
-20
-25
-30
-35
-40
400
410
420
430
440
Application Note for Silicon RF Power Semiconductors
[MHz]
450
460
470
480
490
500
6/7
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2V
2
Equivalent Circuit
- AN-UHF-125-
Vgg1
RF-in
4mm
C1
0.5mm
0.5mm
C12
R5
R4
W
R3
R2
RD00HVS1
0.5mm 0.5mm 2m m
L1 L2
C2
2mm
R1
C13
C14
C15
W
C3
L5
2mm
2mm
C4
2mm
2mm
2mm
C6
C5
Vgg2
R10
C16
R9
W
R8
R7
RD02MUS1B
7mm
C7
0.2mm
2mm
R6
C8
8mm
Vdd
W
L6
5mm
C17 C18 C19
1mm 14mm
C8
Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm W:Line width=1.0mm
Note:Board material- Glass-Epoxy Substrate
Parts Type Value Type name Vender
Capacitor
Resistance
Inductance
C1 15pF GRM1882C1H150JA01D Murat a Manufacturing Co.,Ltd.
C2,C4,C9 12pF GRM1882C1H120JA01D Murat a Manufacturing Co.,Ltd.
C3 47pF GRM1882C1H470JA01D Murat a Manufacturing Co.,Ltd. C5 18pF GRM1882C1H180JA01D Murat a Manufacturing Co.,Ltd.
C6,C11,C13, C17 100pF GRM1882C1H101JA01D Murat a Manufacturing Co.,Ltd.
C7 13pF GRM1882C1H130JA01D Murat a Manufacturing Co.,Ltd. C8 47pF GRM2162C1H470JZ01D Murata Manufacturi ng Co. ,Ltd.
C10 2pF GRM1882C1H020JA01D Murat a Manufacturing Co.,Ltd. C12,C16 1000pF GRM18R11H102KA01D M urata Manufact uri ng Co. ,Ltd. C17,C18 220000pF GRM21BR71H224KA01L Murata M anufac t uring Co.,Lt d. C15,C19 22µF A0603 NICHICON CORPORA TION
R1 6.8pF RPC05-6R8 TAIYOSHA ELECTRIC Co.,Ltd.
R2,R7 100pF RPC05-101 TAIYO S HA E LE CTRIC Co.,Ltd.
R3 270pF RP C05-271 TAIYOSHA E LE CTRIC Co.,Lt d.
R4,R5,R9, R10 10K ohm RPC05-103 TAIYOSHA E LE CTRIC Co.,Ltd.
R6 0 ohm RPC05-0 TAIYOSHA ELECTRIC Co.,Ltd. R8 270pF RP C10-271 TAIYOSHA E LE CTRIC Co.,Lt d.
L1 12nH LQW18A N12NJ10 Murata M anufac t uri ng Co.,Ltd.
L2,L3,L4
L5,L6
Diameter:0.23mm,φ1.66mm(the out s ide di am et er)
Diameter:0.23mm,φ1.66mm(the out si de di am et er)
8nH Enamel ed wire 2Turns,
34nH Enameled wire 7Turns,
2302S yc c orporat i on Co. , Ltd.
2307C yc c orporat ion Co.,Ltd.
4mm 4mm
4mm
L3
L4
4mm
RF-out
C11
C10C9
Vgg1
Vgg
Vdd
GND
GND
RF IN
RF OUT
Application Note for Silicon RF Power Semiconductors
7/7
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