MITSUBISHI RD00HVS1, RD02MUS1B User Manual
APPLICATION NOTE
SUBJECT:
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2V
(improved stability versions)
SUMMARY:
- Sample history:
RD00HVS1: Lot number “551”
RD02MUS1B: Lot number “10ZAC-G”
Silicon RF Power Semiconductors
Document NO. AN-UHF-125
Date : 20
Prepared : H.Hiraoka, Y.Tanaka
Confirmed : S.Kametani
(Taking charge of Silicon RF by
th
May. 2011
MIYOSHI Electronics)
- Evaluate conditions:
(1) Frequency characteristics
@f=400MHz to 470MHz, Pin=5mW, Vdd=7.2V, Idq1=50mA (Vgg1 adj.),
Idq2=200mA(Vgg2 adj.)
(2) Pout vs. Pin characteristics
@f=400MHz to 470MHz, Vdd=7.2V, Idq1=50mA (Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
(3) Small Signal S parameter(S11,S22,S21)
@f=50MHz to 1500MHz, Vdd=7.2V, Idq1=50mA (Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- Results:
Page 2 shows the typical frequency characteristics data @ Vdd=7.2V.
Page 3-5 shows the typical Pout vs. Pin characteristics data @ Vdd=7.2V.
Page 6 Small Signal S parameter.@ Vdd=7.2V.
Page 7 shows the equivalent circuit.
Application Note for Silicon RF Power Semiconductors
1/7
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2V
Frequency characteristics
@Vdd=7.2V, Pin=5mW, Idq1=50mA(Vgg1 adj.), Idq=200mA(Vgg2 adj.)
- AN-UHF-125-
【@Vdd=7.2V,Idq1=50mA,Idq2=200mA,Pin=5mW】
3.0
2.5
2.0
Pout
Pout
Idd
ηt
90
80
70
1.5
ηt(%)
60
ηt
Pout(W),Idd(A)
1.0
0.5
Idd
50
40
0.0
390 400 410 420 430 440 450 460 470 480
Freq(MHz)
30
【@Vdd=7.2V,Idq1=50mA,Idq2=200mA,Pin=5mW】
0
-10
-20
R.L
R.L
2SP
-30
R.L(dB),2SP(dBc)
-40
-50
2SP
-60
390 400 410 420 430 440 450 460 470 480
Freq(MHz)
Application Note for Silicon RF Power Semiconductors
2/7
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2V
)
Pout vs. Pin characteristics
@ f=400MHz, Vdd=7.2V, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- AN-UHF-125-
40
35
30
25
20
Pout(dBm),Gp(dB
15
10
5
@f=400MHz,Vdd=7.2V,Idq1=50mA,I d q2 =200mA
【
Gp
Pout
Gp
ηt
Pout
ηt
】
80
70
60
50
40
30
ηt(%)
20
10
0
-30 -25 -20 -15 -10 -5 0 5 10
0
Pin( dBm)
3.5
@f=400MHz,Vdd=7.2V,Idq1=50mA,Idq2=20 0mA
【
】
70
3.0
ηt
60
2.5
50
2.0
Pout(W),Idd(A)
1.5
Pout
Pout
Idd
ηt
40
30
ηt(%)
1.0
Idd
0.5
20
10
0.0
012345678910
Pin(mW)
0
Application Note for Silicon RF Power Semiconductors
3/7
Loading...