< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
OUTLINE DRAWING
DESCRIPTION
RD02MUS1B is a MOS FET type transistor
6.0+/-0.15
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
specifically designed for VHF/UHF RF power
amplifiers applications.
RD02MUS1B improved a drain surge than
RD02MUS1 by optimizing MOSFET structure.
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
INDEX MARK
(Gate)
1
2
4.9+/-0.15
0.9+/-0.1
0.2+/-0.05
1.0+/-0.05
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
2.0+/-0.05
3.5+/-0.05
3
(0.25)
(0.22) (0.22)
RoHS COMPLIANT
RD02MUS1B-101,T112 is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
ABSOLUTE MAXIMUM RATINGS
(Tc=25°CUNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25
Pin Input Power Zg=Zl=50
ID Drain Current - 1.5 A
Tch Junction temperature - 150
Tstg Storage temperature - -40 to +125
Rth j-c Thermal resistance Junction to case 5.7
Note: Above parameters are guaranteed independently.
°C
21.9 W
0.1 W
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
I
DSS
I
GSS
V
Pout1 Output power 2 3 - W
Drain cutoff current VDS=17V, VGS=0V - - 100 uA
Gate cutoff current VGS=10V, VDS=0V - - 1 uA
Gate threshold Voltage VDS=12V, IDS=1mA 1 1.8 3 V
th
VDD=7.2V, Pin=50mW,
LIMITS UNIT
MIN TYP MAX.
Pout2 Output power 2 3 - W
Note: Above parameters, ratings, limits and conditions are subject to change.
Publication Date : Oct．2011
Drain efficiency
D1
Drain efficiency
D2
Load VSWR tolerance
Load VSWR tolerance
f=175MHz Idq=200mA
VDD=7.2V, Pin=50mW,
f=520MHz Idq=200mA
VDD=9.2V,Po=2W(Pin Control)
f=175MHz,Idq=200mA,Zg=50
Load VSWR=20:1(All Phase)
VDD=9.2V,Po=2W(Pin Control)
f=520MHz,Idq=200mA,Zg=50
Load VSWR=20:1(All Phase)
2
55 65 - %
50 65 - %
No destroy -
No destroy -
< Silicon RF Power MOS FET (Discrete) >
Ciss(pF)
Coss(pF)
Crss (pF)
CHANNEL DISSIPATION Pch(W)
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
25
...
AMBIENT TEMPERATURE
*1:The material of thePCB
Glass epoxy( t=0.8 mm)
20
15
On heat-sink
10
On PCB (*1)
withthrough hole
5
andHeat-sink
0
0 40 80 120 160 200
AMBIENT TEMPERATURETa(deg:C.)
Vds -Ids CHARACTERISTICS
5.0
Ta=+25°C Vg s=9V
4.5
4.0
3.5
3.0
2.5
Ids(A)
2.0
1.5
1.0
0.5
0.0
0 2 4 6 8 10
Vds(V)
Vgs=10V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Vgs=4V
Vgs=3V
Vgs -Ids CHARACTERISTICS
3.0
Ta=+25°C
Vds=7.2V
2.5
2.0
1.5
Ids(A),GM(S)
1.0
0.5
0.0
0 1 2 3 4 5
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
30
20
10
0
0 5 10 15 20
Vds( V)
Ids
GM
Publication Date : Oct．2011
Vds VS. Cos s CHARACTERISTICS
40
Ta=+25°C
f=1MHz
30
20
10
0
0 5 10 15 20
Vds(V)
Vds VS. Crs s CHARACTERISTICS
6
Ta=+25°C
f=1MHz
5
4
3
2
1
0
0 5 10 15 20
Vds( V)
3
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
40
35
30
Gp
@f=175MHz
Po
25
20
Idd(A)
15
10
Po(dBm) , Gp(dB) ,
5
0
-10 -5 0 5 10 15 20
Pin(dBm)
Pin-Po CHARACTERISTICS
40
35
@f=520MHz
Po
30
Gp
25
20
Idd(A)
15
10
Po(dBm) , Gp(dB) ,
5
0
-10 -5 0 5 10 15 20
Pin(dBm)
ηｄ
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=200mA
ηｄ
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=200mA
100
90
80
70
60
50
40
30
20
100
90
80
70
60
50
40
30
20
Pin-Po CHARACTERISTICS
4.0
3.0
2.0
ηd(%)
Pout(W) , Idd(A)
1.0
0.0
@f=175MHz
Po
Idd
ηd
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=200mA
100
80
60
ηd(%)
40
20
0 20 40 60 80 100
Pin(mW)
Pin-Po CHARACTERISTICS
4.0
3.0
2.0
ηd(%)
Pout(W) , Idd(A)
1.0
0.0
@f=520MHz
ηd
Idd
Po
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=200mA
100
80
60
ηd(%)
40
20
0 20 40 60 80 100
Pin(mW)
Vdd-Po CHARACTERISTICS
7
Ta=25°C
f=175MHz
6
Pin=50mW
Idq=200mA
5
Zg=ZI=50 ohm
4
3
Po(W)
2
1
0
3 5 7 9 11 13
Publication Date : Oct．2011
@f=175MHz
Vdd(V)
Vdd-Po CHARACTERISTICS
1.4
Po
1.2
1.0
Idd
0.8
Idd(A)
0.6
0.4
0.2
0.0
Po(W)
7
6
5
4
3
2
1
0
Ta=25°C
f=520MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
@f=520MHz
1.4
Po
1.2
1.0
Idd
0.8
Idd(A)
0.6
0.4
0.2
0.0
3 5 7 9 11 13
Vdd(V)
4
< Silicon RF Power MOS FET (Discrete) >
RF-OUT
RF-in
RF-OUT
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TEST CIRCUIT(f=175MHz)
Vgg Vdd
C1
RF-in
5mm
3mm
62pF
L1
3.3mm 6.5mm
39pF
L1:Enameled wire 5 Turns,D:0.43mm,2.46mmm O.D
L2:Enameled wire 3 Turns,D:0.43mm,2.46mmm O.D
L3:Enameled wire 9 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
TEST CIRCUIT(f=520MHz)
Vgg Vdd
4.7K ohm
19mm
12mm 3mm
680 ohm
240pF
C2 10μF,50V
15mm
3mm 11.5mmL35mm
10pF
10pF
RD02MUS1B
175MHz
L2
13.5mm
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
43pF
12mm 5mm
62pF
C1
19mm
4.7K ohm
26.5m
62pF
20mm
6pF
2mm
43pF
10mm 3mm
680 ohm
240pF
L1:Enameled wire 9 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
C2 10μF,50V
19mm
L1
11mm
RD02MUS1B
520MHz
4.5m
18pF
40.5mm
62pF
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
Publication Date : Oct．2011
5
< Silicon RF Power MOS FET (Discrete) >
175MHz Zin* Zout*
Zin*=11.61+j17.88
520MHz Zin* Zout*
Zin*=1.20+j5.47
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
Zo=50
Zo=50
175MHz Zout*
175MHz Zin*
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
Zout*=6.83+j5.21
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
output impedance
Publication Date : Oct．2011
Zout*=5.56+j1.31
520MHz Zin*
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
520MHz Zout*
6
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B S-PARAMETER DATA (@Vdd=7.2V, Id=200mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
100
0.847
-132.5
16.923
100.2
0.042
8.9
0.621
-118.8
135
0.828
-144.6
12.806
90.7
0.042
-0.1
0.598
-130.5
150
0.824
-148.1
11.555
87.5
0.042
-3.3
0.591
-133.7
175
0.817
-152.8
9.864
82.8
0.042
-7.6
0.590
-138.0
200
0.816
-156.2
8.579
78.6
0.041
-11.2
0.594
-141.2
250
0.816
-161.2
6.712
71.2
0.039
-17.6
0.609
-145.5
300
0.820
-164.9
5.436
64.9
0.038
-23.0
0.628
-148.8
350
0.827
-167.6
4.501
59.3
0.036
-28.2
0.653
-151.2
400
0.835
-169.9
3.813
54.0
0.034
-32.2
0.675
-153.5
450
0.844
-171.9
3.257
49.3
0.032
-36.5
0.699
-155.8
500
0.854
-173.6
2.823
44.9
0.031
-39.8
0.723
-157.7
520
0.858
-174.3
2.668
43.1
0.030
-41.1
0.732
-158.4
527
0.859
-174.7
2.613
42.6
0.030
-41.9
0.735
-158.6
550
0.862
-175.3
2.458
40.9
0.029
-43.2
0.743
-159.6
600
0.871
-176.7
2.161
37.1
0.027
-46.6
0.763
-161.5
650
0.878
-178.0
1.911
33.5
0.025
-49.5
0.781
-162.9
700
0.883
-179.4
1.701
30.4
0.024
-51.5
0.798
-164.6
750
0.890
179.4
1.522
27.3
0.022
-54.4
0.811
-166.1
800
0.897
178.3
1.368
24.4
0.021
-56.1
0.824
-167.7
850
0.899
177.0
1.238
21.7
0.019
-58.7
0.836
-169.0
900
0.905
176.0
1.123
19.3
0.018
-59.4
0.845
-170.3
950
0.907
175.1
1.025
17.1
0.016
-60.7
0.853
-171.4
1000
0.913
174.3
0.937
14.9
0.015
-62.1
0.861
-172.5
1050
0.915
173.2
0.859
12.9
0.013
-64.4
0.870
-173.5
1100
0.918
172.6
0.794
11.0
0.012
-64.9
0.874
-174.6
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
S11 S21 S12 S22
Publication Date : Oct．2011
7
< Silicon RF Power MOS FET (Discrete) >
have
until cold after switch
his products without cause damage for human and
details
copies of the formal
(RF power transistors) are designed
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
predicted operating life time of
an authorized Mitsubishi
therefore
device is
It is
sink in conjunction with other cooling methods as needed (fan,
lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
the
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
, please refer the last page
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
for consumer mobile communication terminals and were not specifically designed for use in
under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.
8.
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
8
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
programs, and algorithms, please be sure to evaluate all information as a total system before making a final
decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no
responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be exported
under a license from the Japanese government and cannot be imported into a country other than the approved
destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
9
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