MITSUBISHI RD01MUS2B User Manual

APPLICATION NOTE

SUBJECT: RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board

Features:

- The evaluation board for RD01MUS2B

- Frequency: 135-175MHz

- Typical input power: 30mW

- Typical output power: 1.45W

- Quiescent Current: 40mA

- Operating Current: 0.29A

Silicon RF Power Semiconductors

Document NO. AN-VHF-055 Date : 15hNov. 2011 Prepared : H.Sakairi

K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by

MIYOSHI Electronics)

- Surface-mounted RF power amplifier structure

Gate Bias Drain Bias

GND

RF IN

GND

RFOUT

PCB L=90mm W=40mm

Application Note for Silicon RF Power Semiconductors

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RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board

Contents

1. Equivalent Circuitry ------------------------------------------------------------

2. PCB Layout -----------------------------------------------------------------------

3. Component List and Standard Deliverable ------------------------------------------

4. Thermal Design of Heat Sink ------------------------------------------------

5. Typical RF Characteristics ---------------------------------------------------5-1. Frequency vs. (Vds=7.2V) --------------------------------------------- 5-2. RF Power vs. (Vds=7.2V) ------------------------------------------- 5-3. Drain Quiescent Current vs. (Vds=7.2V) ------------------------ 5-4. DC Power Supply vs. (Idq=40mA) ---------------------------------

- AN-VHF-055-

Page

3 4 5 6 7 7

8 12 14

Application Note for Silicon RF Power Semiconductors

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RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board

1. Equivalent Circuitry

- AN-VHF-055-

Application Note for Silicon RF Power Semiconductors

3/16

2. PCB Layout

22p

36p

160 p

100 0p

400 7C

100 0p

0.02 2μ

10p

27p

22p

430 p

TOP VIEW

RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board

- AN-VHF-055-

BOARD OUTLINE: 90.0*40.0(mm) MATERIAL : FR-4<R1705> THICKNESS : 0.8(mm)

RF-outRF-in

TOP VIEW ( Parts mounting )

CUT

2309A

MITSUBISHI RF Power Amplifier

22u

4.7K ohm

CUTCUT

CUT

47o hm

CUT

2304C2303S

2303S2309A2311A

RF-outRF-in

160 p

18p

MITSUBISHI RF Power Amplifier

Application Note for Silicon RF Power Semiconductors

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RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board

Evaluation Board assembled with all the component

PCB (raw board)

1608

50V

GRM188BC1H223KA01D

MURATA MANUFACTURING CO.

1608

50V

GRM188BC1H223KA01D

MURATA MANUFACTURING CO.

- AN-VHF-055-

3. Component List

- Component List

No. Description P/N Qty Manufacturer Tr MOSFET RD01MUS2B 1 Mitsubishi Electric Corporation C 1 160 pF 2012 50V GRM2162C1H161JA01D 1 MURATA MANUFACTURING CO. C 2 36 pF 1608 50V GRM1882C1H360JA01D 1 MURATA MANUFACTURING CO. C 3 22 pF 1608 50V GRM1882C1H220JA01D 1 MURATA MANUFACTURING CO. C 4 27 pF 1608 50V GRM1882C1H270JA01D 1 MURATA MANUFACTURING CO. C 5 22 pF 1608 50V GRM1882C1H220JA01D 1 MURATA MANUFACTURING CO. C 6 430 pF 1608 50V GRM1882C1H431JA01D 1 MURATA MANUFACTURING CO. C 7 10 pF 1608 50V GRM1882C1H100JA01D 1 MURATA MANUFACTURING CO. C 8 7 pF 1608 50V GRM1882C1H7R0JA01D 1 MURATA MANUFACTURING CO. C 9 18 pF 1608 50V GRM1882C1H180JA01D 1 MURATA MANUFACTURING CO. C 10 160 pF 2012 50V GRM2162C1H161JA01D 1 MURATAMANUFACTURING CO. C 11 1000 pF 2012 50V GRM2162C1H102JA01D 1 MURATA MANUFACTURING CO. C 12 0.022 C 13 1000 pF 2012 50V GRM2162C1H102JA01D 1 MURATA MANUFACTURING CO. C 14 0.022 μ C 15 22 uF 50V H1002 1 NICHICONCORPORATION L 1 40 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=9 1 YCCORPORATION Co.,Ltd. L 2 51 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=11 1 YCCORPORATION Co.,Ltd. L 3 40 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=9 1 YCCORPORATION Co.,Ltd. L 4 12 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=3 1 YCCORPORATION Co.,Ltd. L 5 17 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=4 1 YCCORPORATION Co.,Ltd. L 6 12 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=3 1 YCCORPORATION Co.,Ltd. L 7 37 nH * Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=7 1 YC CORPORATION Co.,Ltd. R 1 4.7k ohm 2012 RPC10T472J 1 TAIYOSHAELECTRIC CO. R 2 100 ohm 1608 RPC05T101J 1 TAIYOSHA ELECTRIC CO. Pb PCB MS3A0138 1 Homebuilt Rc SMA female connector HRM-300-118S 2 HIROSEELECTRIC CO.,LTD Bc 1 Bias connector red color TM-605R 2 MSK Corporation Bc 2 Bias connector black color TM-605B 2 MSK Corporation Pe Aluminum pedestal 1 Homebuilt

Conducting wire 4 Homebuilt Screw M2 11 * Inductor of Rolling Coil measurement condition : f=100MHz

- Standard Deliverable

TYPE1 TYPE2

Application Note for Silicon RF Power Semiconductors

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RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board

4. Thermal Design of Heat Sink

- AN-VHF-055-

Tch

=(Pout/Efficiency-Pout+Pin) x R

(delta)

Also, operating Tj (“Tj Therefore T T

Pb bottom-air

=“Tj

(op)

Junction point of MOSFET chip

th(ch-Pb bottom)=Rth(ch-case)+Rth(case-Pb bottom)

th(ch-Pb bottom)

”)=120 (deg. C.), in case of RD series that Tch

(op)

=(1W/60%-1W+0.03) x 45 = 31 (deg. C.)

= 150 (deg. C.)

(max)

as delta temperature between Pb bottom and the ambient 60 deg. C.

”- Tch

(delta)

- Ta

(60deg.C.)

=120-31-60=29 (deg. C.)

(in this package)

=45.0 (deg. C./W)

In terms of long-term reliability, “Tj

” has to be kept less than 120 deg. C. i.e. T

(op)

Pb bottom-air

has to be less than 29 deg. C.. The thermal resistance of the heat sink to border it: Rth

(Pb bottom-air)=TPb bottom-air

/(Pout/Efficiency-Pout+Pin)=29/(1W/60%-1W+0.03)= 41 (deg. C./W) Therefore it is preferable that the thermal resistance of the heat sink is much smaller than 41 deg. C./W.

Application Note for Silicon RF Power Semiconductors

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