APPLICATION NOTE
SUBJECT: RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
Features:
- The evaluation board for RD01MUS2B
- Frequency: 135-175MHz
- Typical input power: 30mW
- Typical output power: 1.45W
- Quiescent Current: 40mA
- Operating Current: 0.29A
Silicon RF Power Semiconductors
Document NO. AN-VHF-055
Date : 15hNov. 2011
Prepared : H.Sakairi
K.Mori
Confirmed : T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Surface-mounted RF power amplifier structure
Gate Bias Drain Bias
GND
RF IN
GND
RFOUT
PCB L=90mm W=40mm
Application Note for Silicon RF Power Semiconductors
1/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
Contents
1. Equivalent Circuitry ------------------------------------------------------------
2. PCB Layout -----------------------------------------------------------------------
3. Component List and Standard Deliverable ------------------------------------------
4. Thermal Design of Heat Sink ------------------------------------------------
5. Typical RF Characteristics ---------------------------------------------------5-1. Frequency vs. (Vds=7.2V) ---------------------------------------------
5-2. RF Power vs. (Vds=7.2V) -------------------------------------------
5-3. Drain Quiescent Current vs. (Vds=7.2V) ------------------------
5-4. DC Power Supply vs. (Idq=40mA) ---------------------------------
- AN-VHF-055-
Page
3
4
5
6
7
7
8
12
14
Application Note for Silicon RF Power Semiconductors
2/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
1. Equivalent Circuitry
- AN-VHF-055-
Application Note for Silicon RF Power Semiconductors
3/16
2. PCB Layout
22p
36p
7p
160 p
100 0p
400 7C
100 0p
0.02 2μ
0.02 2μ
10p
27p
22p
430 p
TOP VIEW
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
- AN-VHF-055-
BOARD OUTLINE: 90.0*40.0(mm)
MATERIAL : FR-4<R1705>
THICKNESS : 0.8(mm)
RF-outRF-in
TOP VIEW ( Parts mounting )
CUT
2309A
MITSUBISHI RF Power Amplifier
22u
4.7K ohm
CUTCUT
CUT
47o hm
CUT
CUT
CUT
2304C2303S
2303S2309A2311A
RF-outRF-in
160 p
18p
MITSUBISHI RF Power Amplifier
Application Note for Silicon RF Power Semiconductors
4/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
Evaluation Board assembled with all the component
PCB (raw board)
F
1608
50V
GRM188BC1H223KA01D
1
MURATA MANUFACTURING CO.
F
1608
50V
GRM188BC1H223KA01D
1
MURATA MANUFACTURING CO.
- AN-VHF-055-
3. Component List
- Component List
No. Description P/N Qty Manufacturer
Tr MOSFET RD01MUS2B 1 Mitsubishi Electric Corporation
C 1 160 pF 2012 50V GRM2162C1H161JA01D 1 MURATA MANUFACTURING CO.
C 2 36 pF 1608 50V GRM1882C1H360JA01D 1 MURATA MANUFACTURING CO.
C 3 22 pF 1608 50V GRM1882C1H220JA01D 1 MURATA MANUFACTURING CO.
C 4 27 pF 1608 50V GRM1882C1H270JA01D 1 MURATA MANUFACTURING CO.
C 5 22 pF 1608 50V GRM1882C1H220JA01D 1 MURATA MANUFACTURING CO.
C 6 430 pF 1608 50V GRM1882C1H431JA01D 1 MURATA MANUFACTURING CO.
C 7 10 pF 1608 50V GRM1882C1H100JA01D 1 MURATA MANUFACTURING CO.
C 8 7 pF 1608 50V GRM1882C1H7R0JA01D 1 MURATA MANUFACTURING CO.
C 9 18 pF 1608 50V GRM1882C1H180JA01D 1 MURATA MANUFACTURING CO.
C 10 160 pF 2012 50V GRM2162C1H161JA01D 1 MURATAMANUFACTURING CO.
C 11 1000 pF 2012 50V GRM2162C1H102JA01D 1 MURATA MANUFACTURING CO.
C 12 0.022
C 13 1000 pF 2012 50V GRM2162C1H102JA01D 1 MURATA MANUFACTURING CO.
C 14 0.022 μ
C 15 22 uF 50V H1002 1 NICHICONCORPORATION
L 1 40 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=9 1 YCCORPORATION Co.,Ltd.
L 2 51 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=11 1 YCCORPORATION Co.,Ltd.
L 3 40 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=9 1 YCCORPORATION Co.,Ltd.
L 4 12 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=3 1 YCCORPORATION Co.,Ltd.
L 5 17 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=4 1 YCCORPORATION Co.,Ltd.
L 6 12 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=3 1 YCCORPORATION Co.,Ltd.
L 7 37 nH * Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=7 1 YC CORPORATION Co.,Ltd.
R 1 4.7k ohm 2012 RPC10T472J 1 TAIYOSHAELECTRIC CO.
R 2 100 ohm 1608 RPC05T101J 1 TAIYOSHA ELECTRIC CO.
Pb PCB MS3A0138 1 Homebuilt
Rc SMA female connector HRM-300-118S 2 HIROSEELECTRIC CO.,LTD
Bc 1 Bias connector red color TM-605R 2 MSK Corporation
Bc 2 Bias connector black color TM-605B 2 MSK Corporation
Pe Aluminum pedestal 1 Homebuilt
μ
Conducting wire 4 Homebuilt
Screw M2 11 * Inductor of Rolling Coil measurement condition : f=100MHz
- Standard Deliverable
TYPE1
TYPE2
Application Note for Silicon RF Power Semiconductors
5/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
4. Thermal Design of Heat Sink
- AN-VHF-055-
Tr
Pb
Pe
Tch
=(Pout/Efficiency-Pout+Pin) x R
(delta)
Also, operating Tj (“Tj
Therefore T
T
Pb bottom-air
Pb bottom-air
=“Tj
(op)
Junction point of MOSFET chip
R
th(ch-Pb bottom)=Rth(ch-case)+Rth(case-Pb bottom)
th(ch-Pb bottom)
”)=120 (deg. C.), in case of RD series that Tch
(op)
=(1W/60%-1W+0.03) x 45 = 31 (deg. C.)
= 150 (deg. C.)
(max)
as delta temperature between Pb bottom and the ambient 60 deg. C.
”- Tch
(delta)
- Ta
(60deg.C.)
=120-31-60=29 (deg. C.)
(in this package)
=45.0 (deg. C./W)
In terms of long-term reliability, “Tj
” has to be kept less than 120 deg. C. i.e. T
(op)
Pb bottom-air
has to be less than 29 deg. C..
The thermal resistance of the heat sink to border it:
Rth
(Pb bottom-air)=TPb bottom-air
/(Pout/Efficiency-Pout+Pin)=29/(1W/60%-1W+0.03)= 41 (deg. C./W)
Therefore
it is preferable that the thermal resistance of the heat sink is much smaller than 41 deg. C./W.
Application Note for Silicon RF Power Semiconductors
6/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
140
1.28
14.8
0.03
32.0
1.60
17.2
0.29
75.6
77.1
-21.7
145
1.28
14.8
0.03
32.0
1.59
17.2
0.29
75.3
76.7
-17.3
150
1.28
14.8
0.03
32.0
1.58
17.2
0.29
74.9
76.4
-13.0
155
1.28
14.8
0.03
31.9
1.54
17.1
0.28
76.5
78.0
-10.9
160
1.28
14.8
0.03
31.6
1.44
16.8
0.28
71.1
72.6
-9.8
165
1.28
14.8
0.03
31.7
1.46
16.9
0.26
75.7
77.3
-9.6
170
1.28
14.8
0.03
31.7
1.49
17.0
0.26
77.0
78.6
-10.5
175
1.28
14.8
0.03
31.7
1.47
16.9
0.26
76.1
77.7
-13.3
180
1.28
14.8
0.03
31.5
1.40
16.7
0.25
76.2
77.8
-22.2
- AN-VHF-055-
5. Typical Performance
5-1. Frequency vs.
OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS
( Vds=7.2V )
Ta=+25deg.C
Vds=7.2V, Idq=40mA, Pin=30mW
5
4
3
Pout(W)
2
1
0
130 140 150 160 170 180
Freq. Vgg Gp ID(RF) ηadd ηD I.R.L.
ηD
Pout
Gp
f (MHz)
Ta=+25deg. C., Vds=7.2V, Idq=40mA, Pin=30mW
Pin Pout
100
90
80
70
60
50
40
30
20
10
0
Drain Effi(%),Gp(dB)
Ta=+25deg.C
Vds=7.2V, Idq=40mA, Pin=30mW
40
Pout
30
20
Pout(dBm)
10
0
130 140 150 160 170 180
Idd
I.R.L.
f (MHz)
10
5
0
-5
-10
-15
-20
-25
-30
(MHz) (V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
130 1.28 14.8 0.03 31.0 1.26 16.2 0.26 65.1 66.7 -10.3
135 1.28 14.8 0.03 31.8 1.51 17.0 0.29 71.5 72.9 -15.3
Input R. L. (dB) , Idd(A)
Application Note for Silicon RF Power Semiconductors
7/16
5-2. RF Power vs.
155MHz
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
- AN-VHF-055-
INPUT POWER ( Vds=7.2V )
Ta=+25deg.C,Vds=7.2V,Idq=40mA
2
135MHz
1.5
155MHz
1
175MHz
0.5
Pout , OUTPUT POWER(W)
0
-10 0 10 20
Pin, INPUT POWER(dBm)
Ta=+25deg.C,Vds=7.2V, Idq=40mA
25
24
23
22
21
20
19
18
17
16
Gp, POWER GAIN(dB)
15
14
13
12
0 0.5 1 1.5 2
135MHz
175MHz
Pout, OUTPUT POWER(W)
Ta=+25deg.C,Vds=7.2V,Idq=40mA
35
30
175MHz
25
20
15
Pout , OUTPUT POWER(dBm)
10
-10 0 10 20
POWER GAIN ( Vds=7.2V )
Ta=+25deg.C,Vds=7.2V, Idq=40mA
25
24
23
155MHz
22
21
20
19
18
17
Gp, POWER GAIN(dB)
16
15
14
135MHz
10 12 14 16 18 20 22 24 26 28 30 32 34
135MHz
Pin, INPUTPOWER(dBm)
155MHz
175MHz
Pout, OUTPUT POWER(dBm)
Application Note for Silicon RF Power Semiconductors
8/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
Ta=+25deg.C,Vds=7.2V, Idq=40mA
- AN-VHF-055-
DRAIN EFFICIENCY ( Vds=7.2V )
Ta=+25deg.C,Vds=7.2V, Idq=40mA
80
70
60
175MHz
155MHz
50
40
30
135MHz
20
ηD, DRAIN EFFICIENCY(%)
10
0
0 0.5 1 1.5 2
Pout, OUTPUT POWER(W)
Ta=+25deg.C,Vds=7.2V, Idq=40mA
0.35
80
70
60
50
40
30
20
ηD, DRAIN EFFICIENCY(%)
10
0
10 12 14 16 18 20 22 24 26 28 30 32 34
DRAIN CURRENT ( Vds=7.2V )
Ta=+25deg.C,Vds=7.2V, Idq=40mA
0.35
155MHz
175MHz
135MHz
Pout, OUTPUT POWER(dBm)
Idd, DRAIN CURRENT(A)
0.30
0.25
0.20
0.15
135MHz
175MHz
155MHz
0.10
0.05
0.00
0 0.5 1 1.5 2
Pout, OUTPUT POWER(W)
0.30
0.25
0.20
0.15
0.10
Idd, DRAIN CURRENT(A)
135MHz
155MHz
0.05
0.00
10 12 14 16 18 20 22 24 26 28 30 32 34
Pout, OUTPUT POWER(dBm)
175MHz
Application Note for Silicon RF Power Semiconductors
9/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
VggGpID(RF)
ηadd
ηD
I.R.L.
- AN-VHF-055-
INPUT RETURN LOSS ( Vds=7.2V )
Ta=+25deg.C,Vds=7.2V, Idq=40mA
0
-5
-10
155MHz
135MHz
-15
I.R.L., INPUT RETURN LOSS (dB)
-20
0 0.5 1 1.5 2
Pout, OUTPUT POWER(W)
175MHz
Ta=+25deg. C., Vds=7.2V, Idq=40mA
135MHz
(V) (dBm) (mW) (dBm) (W) (dB) (A) (%) (%) (dB)
1.29 -10.0 0.000 14.0 0.02 23.9 0.05 6.8 6.8 -15.8
1.29 -9.0 0.000 14.9 0.03 23.9 0.05 8.1 8.1 -15.8
1.29 -8.0 0.000 15.9 0.04 23.9 0.06 9.5 9.6 -15.9
1.29 -7.0 0.000 16.8 0.05 23.8 0.06 11.1 11.2 -15.9
1.29 -6.0 0.000 17.8 0.06 23.8 0.06 12.8 12.9 -15.8
1.29 -5.0 0.000 18.8 0.08 23.8 0.07 14.8 14.9 -15.8
1.29 -4.0 0.000 19.8 0.10 23.8 0.08 16.9 17.0 -15.9
1.29 -3.0 0.001 20.8 0.12 23.8 0.09 19.4 19.4 -15.9
1.29 -2.0 0.001 21.8 0.15 23.8 0.10 21.9 22.0 -16.0
1.29 -1.0 0.001 22.9 0.19 23.9 0.11 25.1 25.2 -16.2
1.29 0.0 0.001 24.0 0.25 24.0 0.12 28.7 28.8 -16.6
1.29 1.0 0.001 25.0 0.32 24.0 0.14 32.3 32.4 -17.1
1.29 2.0 0.002 26.0 0.39 24.0 0.15 36.0 36.2 -17.9
1.29 3.0 0.002 26.8 0.48 23.9 0.17 39.8 40.0 -18.6
1.29 4.0 0.002 27.6 0.57 23.6 0.18 43.5 43.7 -18.9
1.29 5.0 0.003 28.3 0.67 23.3 0.20 47.0 47.2 -18.9
1.29 5.9 0.004 28.9 0.77 22.9 0.21 50.3 50.5 -18.7
1.29 7.0 0.005 29.4 0.87 22.4 0.22 53.5 53.9 -18.2
1.29 8.0 0.006 29.9 0.97 21.9 0.24 56.8 57.2 -17.7
1.29 9.0 0.008 30.3 1.08 21.3 0.25 59.9 60.3 -17.2
1.29 10.0 0.010 30.7 1.18 20.7 0.26 62.7 63.2 -16.8
1.29 11.0 0.013 31.0 1.26 20.0 0.27 64.8 65.5 -16.3
1.29 12.0 0.016 31.3 1.34 19.2 0.28 66.7 67.5 -16.0
1.29 13.1 0.020 31.5 1.40 18.4 0.28 68.2 69.2 -15.6
1.29 14.1 0.026 31.6 1.45 17.5 0.29 69.1 70.4 -15.4
1.29 15.1 0.032 31.7 1.49 16.6 0.29 69.9 71.5 -15.2
1.29 16.1 0.041 31.8 1.51 15.7 0.29 70.2 72.1 -15.0
1.29 17.1 0.051 31.9 1.54 14.8 0.29 70.4 72.8 -14.9
1.29 18.1 0.065 31.9 1.56 13.8 0.30 70.3 73.4 -14.9
Pin Pout
Ta=+25deg.C,Vds=7.2V,Idq=40mA
0
-5
155MHz
-10
-15
I.R.L., INPUT RETURN LOSS (dB)
135MHz
175MHz
-20
10 12 14 16 18 20 22 24 26 28 30 32 34
Pout, OUTPUT POWER(dBm)
Application Note for Silicon RF Power Semiconductors
10/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
VggGpID(RF)
ηadd
ηD
I.R.L.
VggGpID(RF)
ηadd
ηD
I.R.L.
- AN-VHF-055-
155MHz
Pin Pout
(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
1.29 -10.0 0.000 13.2 0.02 23.2 0.05 5.9 5.9 -9.4
1.29 -9.0 0.000 14.2 0.03 23.2 0.05 7.1 7.1 -9.4
1.29 -8.0 0.000 15.1 0.03 23.1 0.05 8.4 8.5 -9.4
1.29 -7.0 0.000 16.1 0.04 23.1 0.06 9.9 10.0 -9.4
1.29 -6.0 0.000 17.1 0.05 23.1 0.06 11.8 11.9 -9.4
1.29 -5.0 0.000 18.1 0.06 23.1 0.07 13.6 13.7 -9.3
1.29 -4.0 0.000 19.2 0.08 23.1 0.07 15.8 15.9 -9.3
1.29 -3.0 0.001 20.2 0.10 23.2 0.08 18.2 18.3 -9.2
1.29 -2.0 0.001 21.3 0.13 23.2 0.09 20.9 21.0 -9.2
1.29 -1.0 0.001 22.3 0.17 23.3 0.10 23.8 23.9 -9.1
1.29 0.0 0.001 23.4 0.22 23.4 0.11 27.3 27.5 -9.1
1.29 1.0 0.001 24.5 0.28 23.4 0.12 31.1 31.2 -9.0
1.29 2.0 0.002 25.4 0.35 23.4 0.14 35.1 35.2 -9.0
1.29 3.0 0.002 26.4 0.43 23.4 0.15 39.1 39.2 -9.0
1.29 4.0 0.003 27.2 0.52 23.2 0.17 43.1 43.3 -9.0
1.29 5.0 0.003 27.9 0.62 22.9 0.18 47.2 47.4 -9.1
1.29 6.0 0.004 28.6 0.73 22.6 0.20 51.3 51.6 -9.2
1.29 6.9 0.005 29.2 0.84 22.3 0.21 55.2 55.6 -9.3
1.29 7.9 0.006 29.8 0.96 21.9 0.22 59.2 59.6 -9.5
1.29 9.0 0.008 30.3 1.08 21.4 0.24 62.8 63.3 -9.7
1.29 9.9 0.010 30.7 1.19 20.8 0.25 65.8 66.4 -9.9
1.29 11.0 0.012 31.1 1.28 20.1 0.26 68.2 68.8 -10.1
1.29 11.9 0.016 31.3 1.36 19.4 0.27 69.8 70.6 -10.3
1.29 12.9 0.020 31.5 1.42 18.6 0.27 71.3 72.3 -10.6
1.29 13.9 0.025 31.7 1.48 17.8 0.28 72.5 73.7 -10.8
1.29 14.9 0.031 31.8 1.51 16.9 0.28 72.9 74.4 -11.0
1.29 15.9 0.039 31.9 1.55 16.0 0.28 73.5 75.4 -11.2
1.29 16.9 0.049 32.0 1.58 15.1 0.29 73.8 76.2 -11.3
1.29 17.9 0.062 32.0 1.60 14.1 0.29 73.6 76.5 -11.5
175MHz
Pin Pout
(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
1.29 -10.0 0.000 13.0 0.02 23.0 0.05 5.7 5.8 -11.5
1.29 -9.0 0.000 14.0 0.02 23.0 0.05 6.9 6.9 -11.5
1.29 -8.0 0.000 15.0 0.03 23.0 0.05 8.3 8.3 -11.4
1.29 -7.0 0.000 16.0 0.04 23.1 0.06 9.9 10.0 -11.4
1.29 -6.0 0.000 17.1 0.05 23.1 0.06 11.8 11.9 -11.3
1.29 -5.0 0.000 18.1 0.06 23.1 0.06 13.9 14.0 -11.3
1.29 -4.0 0.000 19.1 0.08 23.2 0.07 16.2 16.3 -11.2
1.29 -3.0 0.001 20.2 0.11 23.2 0.08 18.9 19.0 -11.1
1.29 -2.0 0.001 21.3 0.14 23.3 0.09 21.8 21.9 -11.0
1.29 -1.0 0.001 22.4 0.18 23.4 0.10 25.2 25.3 -11.0
1.29 0.0 0.001 23.5 0.23 23.5 0.11 28.9 29.0 -10.9
1.29 1.0 0.001 24.6 0.29 23.6 0.12 33.2 33.3 -10.9
1.29 2.0 0.002 25.7 0.37 23.7 0.14 37.8 38.0 -11.0
1.29 3.1 0.002 26.7 0.47 23.6 0.15 42.4 42.6 -11.2
1.29 4.1 0.003 27.6 0.57 23.5 0.17 47.1 47.3 -11.4
1.29 5.1 0.003 28.3 0.68 23.2 0.18 51.5 51.7 -11.7
1.29 6.1 0.004 29.0 0.79 22.9 0.20 55.5 55.8 -11.9
1.29 7.1 0.005 29.6 0.90 22.5 0.21 59.3 59.6 -12.1
1.29 8.1 0.006 30.0 1.01 22.0 0.22 62.9 63.3 -12.4
1.29 9.0 0.008 30.4 1.10 21.4 0.23 65.9 66.3 -12.6
1.29 10.0 0.010 30.7 1.19 20.7 0.24 68.2 68.8 -12.8
1.29 11.0 0.013 31.0 1.25 20.0 0.25 70.0 70.7 -13.0
1.29 11.9 0.016 31.2 1.30 19.2 0.25 71.1 72.0 -13.1
1.29 12.9 0.020 31.3 1.35 18.4 0.26 72.2 73.3 -13.2
1.29 13.9 0.025 31.4 1.39 17.5 0.26 73.1 74.4 -13.3
1.29 14.9 0.031 31.5 1.41 16.6 0.26 73.0 74.7 -13.4
1.29 15.9 0.039 31.7 1.47 15.8 0.27 74.4 76.4 -13.4
1.29 16.8 0.048 31.8 1.50 14.9 0.27 74.7 77.2 -13.5
1.29 17.8 0.061 31.8 1.52 14.0 0.27 74.7 77.8 -13.6
Application Note for Silicon RF Power Semiconductors
11/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
135MHz
Vgg
Idq
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
0.71
0.2
14.8
0.03
30.1
1.02
0.23
62.9
61.0
15.3
13.8
0.80
0.2
14.8
0.03
30.5
1.11
0.24
64.8
63.0
15.7
14.0
0.90
0.4
14.8
0.03
30.8
1.20
0.25
66.7
65.0
16.0
14.2
1.01
1.8
14.8
0.03
31.1
1.29
0.26
68.4
66.8
16.3
14.5
1.10
5.6
14.8
0.03
31.3
1.35
0.27
69.7
68.1
16.5
14.7
1.20
18.4
14.8
0.03
31.5
1.42
0.28
70.9
69.4
16.7
14.9
1.31
45.0
14.8
0.03
31.7
1.48
0.29
71.5
70.1
16.9
15.1
1.40
80.1
14.8
0.03
31.8
1.53
0.30
72.0
70.6
17.1
15.4
1.50
136.8
14.8
0.03
32.0
1.58
0.31
72.3
71.0
17.2
15.7
1.61
206.6
14.8
0.03
32.2
1.64
0.32
72.5
71.1
17.4
15.9
Pin
Pout
5-3. Drain Quiescent Current vs.
OUTPUT POWER and DRAIN EFFICIENCY ( Vds=7.2V )
Pin=30mW
Ta=+25deg.C,Vds=7.2V
2
155MHz
- AN-VHF-055-
Pin=30mW
Ta=+25deg.C,Vds=7.2V
90
1.5
135MHz
1
0.5
Pout , OUTPUT POWER(W)
0
0 50 100 150
IDQ, DRAIN QUIESCENT CURRENT(mA)
175MHz
Ta=+25deg. C., Vds=7.2V, Pin=30mW
(V) (mA)
80
155MHz
70
135MHz
ηD, DRAIN EFFICIENCY (%)
60
0 50 100 150
IDQ, DRAIN QUIESCENT CURRENT(mA)
175MHz
Application Note for Silicon RF Power Semiconductors
12/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
155MHz
Vgg
Idq
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
0.71
0.2
14.8
0.03
30.5
1.12
0.23
67.3
65.5
15.7
11.2
0.80
0.2
14.8
0.03
30.8
1.21
0.24
69.3
67.6
16.1
11.1
0.90
0.5
14.8
0.03
31.1
1.29
0.25
71.1
69.4
16.4
11.1
1.01
1.8
14.8
0.03
31.4
1.36
0.26
72.5
70.9
16.6
11.1
1.10
5.6
14.8
0.03
31.5
1.42
0.27
73.5
72.0
16.7
11.0
1.20
18.5
14.7
0.03
31.7
1.47
0.28
74.2
72.7
16.9
11.0
1.31
44.8
14.7
0.03
31.8
1.52
0.28
74.9
73.4
17.1
11.0
1.40
79.9
14.8
0.03
31.9
1.56
0.29
75.2
73.7
17.2
10.9
1.50
136.4
14.8
0.03
32.1
1.61
0.30
75.7
74.3
17.3
10.8
1.61
205.8
14.8
0.03
32.2
1.65
0.30
75.7
74.3
17.4
10.8
175MHz
Vgg
Idq
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
0.71
0.2
14.8
0.03
30.8
1.19
0.23
72.8
70.9
16.0
12.2
0.80
0.2
14.8
0.03
30.9
1.24
0.23
73.4
71.6
16.1
12.3
0.90
0.5
14.8
0.03
31.1
1.29
0.24
74.2
72.5
16.3
12.5
1.01
1.7
14.8
0.03
31.3
1.33
0.25
74.9
73.2
16.5
12.7
1.10
5.5
14.8
0.03
31.4
1.37
0.25
75.2
73.6
16.6
12.8
1.20
18.4
14.8
0.03
31.5
1.41
0.26
75.4
73.8
16.7
13.1
1.31
44.8
14.8
0.03
31.6
1.44
0.26
75.8
74.3
16.8
13.3
1.40
79.8
14.8
0.03
31.7
1.47
0.27
75.9
74.3
16.9
13.5
1.50
136.2
14.8
0.03
31.7
1.49
0.27
76.1
74.6
17.0
13.7
1.61
205.7
14.8
0.03
31.8
1.52
0.28
76.4
74.9
17.0
14.1
Pin
Pout
Pin
Pout
- AN-VHF-055-
(V) (mA)
(V) (mA)
Application Note for Silicon RF Power Semiconductors
13/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
5-4. DC Power Supply vs.
OUTPUT POWER and DRAIN EFFICIENCY ( Idq=40mA )
Pin=30mW
Ta=+25deg.C, Vgg fixedatIdq=40mA Vds=7.2V
- AN-VHF-055-
Pin=30mW
Ta=+25deg.C, Vgg fixedatIdq=40mA Vds=7.2V
3
2.5
2
155MHz
1.5
135MHz
1
Pout , OUTPUT POWER(W)
0.5
0
3 4 5 6 7 8 9 10
VDD, SUPPLY VOLTAGE(V)
DRAIN CURRENT ( Idq=40mA )
Pin=30mW
Ta=+25deg.C, Vgg fixedatIdq=40mA Vds=7.2V
0.5
175MHz
90
155MHz
175MHz
80
70
135MHz
ηD, DRAIN EFFICIENCY(%)
60
3 4 5 6 7 8 9 10
VDD, SUPPLY VOLTAGE(V)
0.4
155MHz
0.3
0.2
Idd, DRAIN CURRENT(A)
0.1
0.0
135MHz
175MHz
3 4 5 6 7 8 9 10
VDD, SUPPLY VOLTAGE(V)
Application Note for Silicon RF Power Semiconductors
14/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
135MHz
Vgg
Vdd
Idq
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(mW)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
1.29
3.0
33.8
14.8
0.03
24.7
0.3
0.13
76.5
68.7
9.9
13.5
1.29
3.5
34.6
14.8
0.03
26.0
0.4
0.15
75.7
69.9
11.2
13.7
1.29
4.0
35.4
14.8
0.03
27.1
0.5
0.17
75.5
71.0
12.3
13.9
1.29
4.5
36.3
14.8
0.03
28.0
0.6
0.19
75.0
71.4
13.2
14.1
1.29
5.0
37.0
14.8
0.03
28.9
0.8
0.21
74.3
71.4
14.1
14.3
1.29
5.5
37.7
14.8
0.03
29.6
0.9
0.23
73.9
71.5
14.9
14.6
1.29
6.0
38.5
14.8
0.03
30.3
1.1
0.25
73.2
71.2
15.5
14.7
1.29
6.5
39.4
14.8
0.03
30.9
1.2
0.26
72.3
70.6
16.2
14.9
1.29
7.0
40.3
14.8
0.03
31.5
1.4
0.28
71.8
70.3
16.7
15.1
1.29
7.5
41.2
14.8
0.03
32.0
1.6
0.30
71.1
69.7
17.2
15.3
1.29
8.0
42.2
14.8
0.03
32.5
1.8
0.32
70.4
69.2
17.7
15.5
1.29
8.5
43.1
14.8
0.03
32.9
1.9
0.33
69.4
68.4
18.1
15.6
1.29
9.0
44.1
14.8
0.03
33.3
2.1
0.35
68.7
67.7
18.5
15.8
1.29
9.5
45.1
14.8
0.03
33.6
2.3
0.36
67.4
66.5
18.9
15.9
1.29
10.0
46.2
14.8
0.03
34.0
2.5
0.38
66.6
65.8
19.2
16.1
155MHz
Vgg
Vdd
Idq
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
1.29
3.0
33.8
14.7
0.03
24.6
0.3
0.12
77.8
69.7
9.8
11.7
1.29
3.5
34.5
14.7
0.03
25.9
0.4
0.14
77.4
71.4
11.1
11.6
1.29
4.0
35.3
14.7
0.03
27.0
0.5
0.16
77.1
72.5
12.2
11.5
1.29
4.5
36.2
14.7
0.03
28.0
0.6
0.18
77.0
73.3
13.2
11.4
1.29
5.0
36.9
14.7
0.03
28.8
0.8
0.20
76.6
73.6
14.1
11.4
1.29
5.5
37.7
14.7
0.03
29.6
0.9
0.22
76.4
73.9
14.9
11.3
1.29
6.0
38.4
14.7
0.03
30.3
1.1
0.24
76.1
74.0
15.6
11.2
1.29
6.5
39.3
14.7
0.03
31.0
1.3
0.26
75.4
73.7
16.3
11.1
1.29
7.0
40.2
14.7
0.03
31.6
1.4
0.28
74.9
73.3
16.8
11.0
1.29
7.5
41.0
14.7
0.03
32.1
1.6
0.29
74.7
73.3
17.4
10.9
1.29
8.0
41.9
14.7
0.03
32.6
1.8
0.31
74.0
72.8
17.9
10.8
1.29
8.5
42.9
14.7
0.03
33.1
2.0
0.33
73.3
72.3
18.4
10.8
1.29
9.0
44.0
14.7
0.03
33.5
2.2
0.34
72.6
71.6
18.8
10.7
1.29
9.5
45.0
14.7
0.03
33.9
2.4
0.36
71.8
70.9
19.1
10.6
1.29
10.0
46.1
14.7
0.03
34.2
2.6
0.37
71.0
70.2
19.5
10.6
Pin
Pout
Pin
Pout
(V) (V) (mA)
- AN-VHF-055-
Ta=+25deg. C., Idq=40mA
(V) (V) (mA)
Application Note for Silicon RF Power Semiconductors
15/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
175MHz
Vgg
Vdd
Idq
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
1.29
3.0
33.8
14.8
0.03
24.2
0.3
0.11
78.5
69.6
9.4
13.1
1.29
3.5
34.5
14.8
0.03
25.5
0.4
0.13
78.5
72.0
10.8
13.2
1.29
4.0
35.4
14.8
0.03
26.7
0.5
0.15
78.1
73.1
11.9
13.3
1.29
4.5
36.0
14.8
0.03
27.7
0.6
0.17
78.1
74.1
12.9
13.3
1.29
5.0
36.9
14.8
0.03
28.6
0.7
0.19
77.8
74.6
13.8
13.3
1.29
5.5
37.6
14.8
0.03
29.4
0.9
0.20
77.3
74.7
14.6
13.3
1.29
6.0
38.4
14.8
0.03
30.1
1.0
0.22
77.0
74.8
15.3
13.3
1.29
6.5
39.2
14.8
0.03
30.8
1.2
0.24
76.7
74.7
16.0
13.3
1.29
7.0
40.0
14.8
0.03
31.4
1.4
0.26
76.2
74.5
16.6
13.3
1.29
7.5
41.0
14.8
0.03
31.9
1.6
0.27
75.6
74.1
17.2
13.3
1.29
8.0
42.0
14.8
0.03
32.4
1.7
0.29
75.0
73.8
17.6
13.3
1.29
8.5
43.0
14.8
0.03
32.9
1.9
0.31
74.4
73.2
18.1
13.2
1.29
9.0
43.9
14.7
0.03
33.3
2.1
0.32
73.7
72.7
18.6
13.2
1.29
9.5
44.9
14.8
0.03
33.7
2.3
0.34
73.0
72.1
19.0
13.2
1.29
10.0
46.0
14.8
0.03
34.1
2.6
0.35
72.2
71.3
19.3
13.2
Pin
Pout
- AN-VHF-055-
(V) (V) (mA)
Application Note for Silicon RF Power Semiconductors
16/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
- AN-VHF-055-
6. Revision history
Revision Change Date
- Initial release 11-Nov.-2011
Application Note for Silicon RF Power Semiconductors
1/1
Loading...