MITSUBISHI RD01MUS2, RD07MUS2B User Manual
APPLICATION NOTE
SUBJECT: RD01MUS2 & RD07MUS2B RF characteristics data at135 to 175MHz. (Vdd=7.2V)
SUMMARY:
This application note shows the RF wide band characteristics data
(Frequency, Pout vs. Pin, Pout vs. Vgg characteristics) at135 to 175 MHz band.
- Sample history :
RD01MUS2 : Lot number “571”
RD07MUS2B : Lot number “105AB-G”
Silicon RF Power Semiconductors
Document NO. AN-VHF-053-A
Date :06thDec. 2010
Rev. date : 08thMar. 2011
Prepared : S.nakatsuka
Confirmed : S.Kametani
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Evaluate conditions :
@f=135 to 175MHz : Vdd=7.2V, Vgg=3.5V
- Results :
Page 2-7. shows the typical Frequency characteristics data.
Page 8-11. shows the typical Pout vs. Pin characteristics data.
Page 12-14. shows the typical Pout vs. Vgg characteristics data.
Page 15-17. shows the typical Pout vs. Vdd characteristics data.
Page 18-19. shows the equivalent circuit.
Application Note for Silicon RF Power Semiconductors
1/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
@Po=6.3W
Frequency characteristics 1
@ Vgg Control (@Po=6.3W, 5W), Vdd=7.2V, Pi=30mW (14.77dBm)
- AN-VHF-053-A-
2.5
2.0
1.5
Idd[A]
1.0
0.5
0.0
135 145 155 165 175
60
55
50
45
ηT[%]
40
35
30
@Po=6.3W
135 145 155 165 175
@Po=6.3W
@Po=5W
f[MHz]
@Po=5W
f[MHz]
3.5
3.0
2.5
Vgg[V]
2.0
1.5
1.0
135 145 155 165 175
40.0
38.0
36.0
34.0
32.0
30.0
Gp[dB]
28.0
26.0
24.0
22.0
20.0
135 145 155 165 175
@Po=6.3W
@Po=5W
f[MHz]
@Po=5W
f[MHz]
Application Note for Silicon RF Power Semiconductors
2/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
Frequency characteristics 1 data
@ Po=6.3W, Vdd=7.2V, Pi=30mW (14.77dBm)
f Vgg Gp R.L. Idd ηT 2fo 3fo
[MHz] [V] [dB] [dB] [A] [%] [dBc] [dBc]
135 3.18 23.29 -5 2.00 44.73 -40.78 -55.22
140 3.08 23.29 -5 1.91 47.23 -37.95 -58.24
145 2.99 23.26 -5 1.81 49.24 -38.56 -61.86
150 2.96 23.27 -6 1.74 51.21 -41.53 -65.19
155 2.96 23.29 -6 1.69 52.49 -44.74 -64.75
160 3.02 23.25 -7 1.69 52.69 -48.17 -63.10
165 3.14 23.26 -7 1.74 51.26 -50.95 -65.08
170 3.21 23.24 -8 1.80 49.50 -52.47 -65.53
175 3.24 23.26 -9 1.87 47.44 -53.92 -64.92
- AN-VHF-053-A-
@ Po=5W, Vdd=7.2V, Pi=30mW (14.77dBm)
f Vgg Gp R.L. Idd ηT 2fo 3fo
[MHz] [V] [dB] [dB] [A] [%] [dBc] [dBc]
135 2.84 22.27 -5 1.76 40.54 -34.03 -52.75
140 2.78 22.28 -5 1.67 42.94 -34.93 -56.83
145 2.72 22.28 -5 1.60 44.44 -36.96 -62.42
150 2.69 22.28 -6 1.53 46.07 -40.31 -64.62
155 2.68 22.27 -7 1.49 47.50 -45.29 -63.13
160 2.71 22.28 -7 1.48 47.87 -52.77 -61.91
165 2.78 22.27 -8 1.52 46.37 -60.40 -63.31
170 2.84 22.31 -9 1.57 45.04 -60.80 -65.57
175 2.86 22.26 -10 1.63 43.49 -62.13 -63.79
Application Note for Silicon RF Power Semiconductors
3/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
Frequency characteristics 2
@ Pin Control (@Po=6.3W, 5W), Vdd=7.2V, Vgg=3.5V (Idq=405mA)
- AN-VHF-053-A-
2.5
2.0
1.5
Idd[A]
1.0
0.5
0.0
135 145 155 165 175
f[MHz]
60
55
50
45
ηT[%]
40
35
30
@Po=6.3W
@Po=5W
135 145 155 165 175
f[MHz]
@Po=6.3W
@Po=5W
15
14
13
12
11
10
9
8
7
Pin[dBm]
6
5
4
3
2
1
0
135 145 155 165 175
40
38
36
34
32
30
Gp[dB]
28
26
24
22
20
135 145 155 165 175
@Po=5W
@Po=6.3W
@Po=6.3W
@Po=5W
f[MHz]
f[MHz]
Application Note for Silicon RF Power Semiconductors
4/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
Frequency characteristics 2 data
@ Po=6.3W, Vdd=7.2V, Vgg=3.5V (Idq=405mA)
f Pin Pin Gp R.L. Idd ηT 2fo 3fo
[MHz] [dBm] [mW] [dB] [dB] [A] [%] [dBc] [dBc]
135 12.07 16.09 26.0 -4.5 2.008 44.72 -45.66 -56.22
140 11.29 13.47 26.7 -4.6 1.898 46.76 -40.38 -59.67
145 10.95 12.43 27.1 -4.8 1.805 49.28 -40.76 -65.91
150 10.72 11.82 27.3 -5.2 1.725 51.57 -42.02 -68.21
155 10.68 11.70 27.3 -5.6 1.67 53.24 -44.78 -66.33
160 11.00 12.58 27.1 -6.2 1.66 53.80 -46.64 -64.93
165 11.53 14.21 26.5 -6.7 1.688 52.62 -49.30 -65.53
170 11.96 15.72 26.0 -7.4 1.745 50.63 -50.48 -64.83
175 12.49 17.76 25.5 -8.1 1.843 48.33 -52.48 -63.90
- AN-VHF-053-A-
@ Po=5W, Vdd=7.2V, Vgg=3.5V (Idq=405mA)
f Pin Pin Gp R.L. Idd ηT 2fo 3fo
[MHz] [dBm] [mW] [dB] [dB] [A] [%] [dBc] [dBc]
135 9.30 8.51 27.7 -4.4 1.753 40.10 -40.35 -56.94
140 8.92 7.80 28.1 -4.5 1.678 42.17 -39.55 -60.36
145 8.54 7.14 28.5 -4.8 1.59 44.41 -40.42 -64.63
150 8.22 6.64 28.8 -5.1 1.518 46.53 -42.58 -67.66
155 8.04 6.36 29.0 -5.6 1.463 48.20 -45.96 -65.16
160 7.98 6.28 29.0 -6.2 1.438 48.82 -49.58 -65.67
165 8.31 6.77 28.7 -6.7 1.463 48.40 -53.92 -64.01
170 8.57 7.20 28.4 -7.5 1.5 46.86 -57.48 -65.68
175 8.96 7.88 28.1 -8.1 1.57 44.84 -60.52 -64.88
Application Note for Silicon RF Power Semiconductors
5/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
@Pin=20mW
@Pin=30mW
@Pin=20mW
@Pin=30mW
@Pin=20mW
@Pin=30mW
@Pin=20mW
@Pin=30mW
@Pin=20mW
@Pin=30mW
Frequency characteristics 3
@ Pin Control (@Pi=30mW, 20mW), Vdd=7.2V, Vgg=3.5V (Idq=405mA)
- AN-VHF-053-A-
10.0
9.5
9.0
8.5
8.0
7.5
Po[W]
7.0
6.5
6.0
5.5
5.0
135 145 155 165 175
f[MHz]
30
29
28
27
26
25
Gp[dB]
24
23
22
21
20
135 145 155 165 175
f[MHz]
40.0
39.5
39.0
38.5
Po[dBm]
38.0
37.5
37.0
135 145 155 165 175
f[MHz]
2.6
2.4
2.2
2.0
Idd[A]
1.8
1.6
1.4
1.2
135 145 155 165 175
f[MHz]
65
60
55
ηT[%]
50
45
40
135 145 155 165 175
f[MHz]
Application Note for Silicon RF Power Semiconductors
6/19
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