APPLICATION NOTE
SUBJECT: RD01MUS2 & RD07MUS2B RF characteristics data at135 to 175MHz. (Vdd=7.2V)
SUMMARY:
This application note shows the RF wide band characteristics data
(Frequency, Pout vs. Pin, Pout vs. Vgg characteristics) at135 to 175 MHz band.
- Sample history :
RD01MUS2 : Lot number “571”
RD07MUS2B : Lot number “105AB-G”
Silicon RF Power Semiconductors
Document NO. AN-VHF-053-A
Date :06thDec. 2010
Rev. date : 08thMar. 2011
Prepared : S.nakatsuka
Confirmed : S.Kametani
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Evaluate conditions :
@f=135 to 175MHz : Vdd=7.2V, Vgg=3.5V
- Results :
Page 2-7. shows the typical Frequency characteristics data.
Page 8-11. shows the typical Pout vs. Pin characteristics data.
Page 12-14. shows the typical Pout vs. Vgg characteristics data.
Page 15-17. shows the typical Pout vs. Vdd characteristics data.
Page 18-19. shows the equivalent circuit.
Application Note for Silicon RF Power Semiconductors
1/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
@Po=6.3W
Frequency characteristics 1
@ Vgg Control (@Po=6.3W, 5W), Vdd=7.2V, Pi=30mW (14.77dBm)
- AN-VHF-053-A-
2.5
2.0
1.5
Idd[A]
1.0
0.5
0.0
135 145 155 165 175
60
55
50
45
ηT[%]
40
35
30
@Po=6.3W
135 145 155 165 175
@Po=6.3W
@Po=5W
f[MHz]
@Po=5W
f[MHz]
3.5
3.0
2.5
Vgg[V]
2.0
1.5
1.0
135 145 155 165 175
40.0
38.0
36.0
34.0
32.0
30.0
Gp[dB]
28.0
26.0
24.0
22.0
20.0
135 145 155 165 175
@Po=6.3W
@Po=5W
f[MHz]
@Po=5W
f[MHz]
Application Note for Silicon RF Power Semiconductors
2/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
Frequency characteristics 1 data
@ Po=6.3W, Vdd=7.2V, Pi=30mW (14.77dBm)
f Vgg Gp R.L. Idd ηT 2fo 3fo
[MHz] [V] [dB] [dB] [A] [%] [dBc] [dBc]
135 3.18 23.29 -5 2.00 44.73 -40.78 -55.22
140 3.08 23.29 -5 1.91 47.23 -37.95 -58.24
145 2.99 23.26 -5 1.81 49.24 -38.56 -61.86
150 2.96 23.27 -6 1.74 51.21 -41.53 -65.19
155 2.96 23.29 -6 1.69 52.49 -44.74 -64.75
160 3.02 23.25 -7 1.69 52.69 -48.17 -63.10
165 3.14 23.26 -7 1.74 51.26 -50.95 -65.08
170 3.21 23.24 -8 1.80 49.50 -52.47 -65.53
175 3.24 23.26 -9 1.87 47.44 -53.92 -64.92
- AN-VHF-053-A-
@ Po=5W, Vdd=7.2V, Pi=30mW (14.77dBm)
f Vgg Gp R.L. Idd ηT 2fo 3fo
[MHz] [V] [dB] [dB] [A] [%] [dBc] [dBc]
135 2.84 22.27 -5 1.76 40.54 -34.03 -52.75
140 2.78 22.28 -5 1.67 42.94 -34.93 -56.83
145 2.72 22.28 -5 1.60 44.44 -36.96 -62.42
150 2.69 22.28 -6 1.53 46.07 -40.31 -64.62
155 2.68 22.27 -7 1.49 47.50 -45.29 -63.13
160 2.71 22.28 -7 1.48 47.87 -52.77 -61.91
165 2.78 22.27 -8 1.52 46.37 -60.40 -63.31
170 2.84 22.31 -9 1.57 45.04 -60.80 -65.57
175 2.86 22.26 -10 1.63 43.49 -62.13 -63.79
Application Note for Silicon RF Power Semiconductors
3/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
Frequency characteristics 2
@ Pin Control (@Po=6.3W, 5W), Vdd=7.2V, Vgg=3.5V (Idq=405mA)
- AN-VHF-053-A-
2.5
2.0
1.5
Idd[A]
1.0
0.5
0.0
135 145 155 165 175
f[MHz]
60
55
50
45
ηT[%]
40
35
30
@Po=6.3W
@Po=5W
135 145 155 165 175
f[MHz]
@Po=6.3W
@Po=5W
15
14
13
12
11
10
9
8
7
Pin[dBm]
6
5
4
3
2
1
0
135 145 155 165 175
40
38
36
34
32
30
Gp[dB]
28
26
24
22
20
135 145 155 165 175
@Po=5W
@Po=6.3W
@Po=6.3W
@Po=5W
f[MHz]
f[MHz]
Application Note for Silicon RF Power Semiconductors
4/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
Frequency characteristics 2 data
@ Po=6.3W, Vdd=7.2V, Vgg=3.5V (Idq=405mA)
f Pin Pin Gp R.L. Idd ηT 2fo 3fo
[MHz] [dBm] [mW] [dB] [dB] [A] [%] [dBc] [dBc]
135 12.07 16.09 26.0 -4.5 2.008 44.72 -45.66 -56.22
140 11.29 13.47 26.7 -4.6 1.898 46.76 -40.38 -59.67
145 10.95 12.43 27.1 -4.8 1.805 49.28 -40.76 -65.91
150 10.72 11.82 27.3 -5.2 1.725 51.57 -42.02 -68.21
155 10.68 11.70 27.3 -5.6 1.67 53.24 -44.78 -66.33
160 11.00 12.58 27.1 -6.2 1.66 53.80 -46.64 -64.93
165 11.53 14.21 26.5 -6.7 1.688 52.62 -49.30 -65.53
170 11.96 15.72 26.0 -7.4 1.745 50.63 -50.48 -64.83
175 12.49 17.76 25.5 -8.1 1.843 48.33 -52.48 -63.90
- AN-VHF-053-A-
@ Po=5W, Vdd=7.2V, Vgg=3.5V (Idq=405mA)
f Pin Pin Gp R.L. Idd ηT 2fo 3fo
[MHz] [dBm] [mW] [dB] [dB] [A] [%] [dBc] [dBc]
135 9.30 8.51 27.7 -4.4 1.753 40.10 -40.35 -56.94
140 8.92 7.80 28.1 -4.5 1.678 42.17 -39.55 -60.36
145 8.54 7.14 28.5 -4.8 1.59 44.41 -40.42 -64.63
150 8.22 6.64 28.8 -5.1 1.518 46.53 -42.58 -67.66
155 8.04 6.36 29.0 -5.6 1.463 48.20 -45.96 -65.16
160 7.98 6.28 29.0 -6.2 1.438 48.82 -49.58 -65.67
165 8.31 6.77 28.7 -6.7 1.463 48.40 -53.92 -64.01
170 8.57 7.20 28.4 -7.5 1.5 46.86 -57.48 -65.68
175 8.96 7.88 28.1 -8.1 1.57 44.84 -60.52 -64.88
Application Note for Silicon RF Power Semiconductors
5/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
@Pin=20mW
@Pin=30mW
@Pin=20mW
@Pin=30mW
@Pin=20mW
@Pin=30mW
@Pin=20mW
@Pin=30mW
@Pin=20mW
@Pin=30mW
Frequency characteristics 3
@ Pin Control (@Pi=30mW, 20mW), Vdd=7.2V, Vgg=3.5V (Idq=405mA)
- AN-VHF-053-A-
10.0
9.5
9.0
8.5
8.0
7.5
Po[W]
7.0
6.5
6.0
5.5
5.0
135 145 155 165 175
f[MHz]
30
29
28
27
26
25
Gp[dB]
24
23
22
21
20
135 145 155 165 175
f[MHz]
40.0
39.5
39.0
38.5
Po[dBm]
38.0
37.5
37.0
135 145 155 165 175
f[MHz]
2.6
2.4
2.2
2.0
Idd[A]
1.8
1.6
1.4
1.2
135 145 155 165 175
f[MHz]
65
60
55
ηT[%]
50
45
40
135 145 155 165 175
f[MHz]
Application Note for Silicon RF Power Semiconductors
6/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
Frequency characteristics 3 data
@ Pi=30mW, Vdd=7.2V, Vgg=3.5V (Idq=405mA)
f Po Po Gp R.L. Idd ηT P.A.E. 2fo 3fo
[MHz] [dBm] [W] [dB] [dB] [A] [%] [%] [dBc] [dBc]
135 38.7 7.4 23.9 -4.8 2.21 47.1 46.9 -47.8 -56.4
140 38.9 7.7 24.1 -4.8 2.16 50.1 49.9 -40.5 -61.2
145 39.0 7.9 24.2 -4.9 2.09 52.9 52.7 -39.3 -66.0
150 39.0 7.9 24.2 -5.2 2.02 54.9 54.7 -40.7 -66.2
155 39.0 7.9 24.2 -5.6 1.96 56.0 55.8 -43.0 -67.2
160 38.8 7.7 24.1 -6.2 1.92 55.9 55.6 -44.1 -65.9
165 38.7 7.4 23.9 -6.7 1.91 54.1 53.8 -46.4 -64.4
170 38.6 7.2 23.8 -7.5 1.94 51.7 51.5 -48.3 -65.1
175 38.5 7.1 23.7 -8.2 2.02 49.2 49.0 -50.3 -64.1
- AN-VHF-053-A-
@ Pi=20mW, Vdd=7.2V, Vgg=3.5V (Idq=405mA)
f Po Po Gp R.L. Idd ηT P.A.E. 2fo 3fo
[MHz] [dBm] [W] [dB] [-dB] [A] [%] [%] [dBc] [dBc]
135 38.3 6.7 25.2 -4.5 2.07 45.9 45.8 -46.9 -57.0
140 38.4 7.0 25.4 -4.6 2.02 49.0 48.8 -40.4 -60.5
145 38.6 7.2 25.6 -4.8 1.96 51.9 51.8 -39.7 -66.1
150 38.6 7.3 25.6 -5.2 1.89 54.2 54.1 -41.4 -68.1
155 38.6 7.2 25.7 -5.5 1.83 55.5 55.4 -43.1 -66.5
160 38.5 7.0 25.4 -6.2 1.79 55.5 55.4 -45.1 -64.2
165 38.3 6.8 25.2 -6.7 1.78 53.7 53.6 -47.8 -64.0
170 38.2 6.6 25.2 -7.4 1.81 51.3 51.2 -49.7 -63.9
175 38.1 6.5 25.1 -8.1 1.87 48.8 48.6 -51.2 -63.7
Application Note for Silicon RF Power Semiconductors
7/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
@f=155MHz
@f=135MHz
@f=175MHz
@f=155MHz
@f=135MHz
@f=175MHz
@f=155MHz
@f=135MHz
@f=175MHz
@f=155MHz
@f=135MHz
@f=175MHz
@f=155MHz
@f=135MHz
@f=175MHz
Pout vs. Pin characteristics
@ Vdd=7.2V, Vgg=3.5V (Idq=405mA), f=135MHz, 155MHz, 175MHz
- AN-VHF-053-A-
9
8
7
6
5
Po[W]
4
3
2
1
0
0 20 40 60 80 100 120
Pin[mW]
40
38
36
34
32
30
Gp[dB]
28
26
24
22
20
-10.0 -5.0 0.0 5.0 10.0 15.0 20.0
Pin[dBm]
40
38
36
34
32
30
Po[dBm]
28
26
24
22
20
-10.0 -5.0 0.0 5.0 10.0 15.0 20.0
Pin[dBm]
2.5
2.0
1.5
Idd[A]
1.0
0.5
0.0
-10.0 -5.0 0.0 5.0 10.0 15.0 20.0
Pin[dBm]
60
50
40
30
ηT[%]
20
10
0
-10.0 -5.0 0.0 5.0 10.0 15.0 20.0
Pin[dBm]
Application Note for Silicon RF Power Semiconductors
8/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
Pout vs. Pin characteristics data
@ f=135MHz, Vgg=3.5V (Idq=405mA)
Pin Pin Po Po Gp R.L. Idd ηT P.A.E. 2fo 3fo
[dBm] [mW] [dBm] [W] [dB] [dB] [A] [%] [%] [dBc] [dBc]
-10.03 0.10 20.51 0.11
-8.99 0.13 21.48 0.14
-7.97 0.16 22.40 0.17
-6.97 0.20 23.32 0.21
-6.02 0.25 24.16 0.26
-5.03 0.31 25.04 0.32
-4.01 0.40 25.93 0.39
-2.99 0.50 26.82 0.48
-2.02 0.63 27.66 0.58
-1.01 0.79 28.54 0.71
-0.03 0.99 29.41 0.87
0.96 1.25 30.30 1.07
2.01 1.59 31.26 1.34
2.99 1.99 32.14 1.64
3.98 2.50 33.04 2.01
4.96 3.13 33.91 2.46
5.99 3.97 34.80 3.02
7.00 5.02 35.58 3.62
7.99 6.30 36.26 4.23
8.96 7.87 36.83 4.82
9.99 9.98 37.32 5.39
10.98 12.53 37.71 5.90
12.05 16.02 38.04 6.37
12.98 19.86 38.29 6.75
13.98 25.00 38.50 7.09
15.00 31.65 38.67 7.36
15.98 39.64 38.84 7.65
17.03 50.52 38.97 7.89
17.97 62.71 39.07 8.08
18.99 79.30 39.15 8.23
20.01 100.23 39.22 8.35
30.5 -3.5
30.5 -4.6
30.4 -5.4
30.3 -3.4
30.2 -4.0
30.1 -3.7
29.9 -4.1
29.8 -3.8
29.7 -3.8
29.6 -4.0
29.4 -4.0
29.3 -4.1
29.3 -4.2
29.2 -4.2
29.1 -4.3
29.0 -4.2
28.8 -4.3
28.6 -4.3
28.3 -4.3
27.9 -4.4
27.3 -4.4
26.7 -4.4
26.0 -4.5
25.3 -4.5
24.5 -4.6
23.7 -4.9
22.9 -5.4
21.9 -6.3
21.1 -7.2
20.2 -8.2
19.2 -9.1
0.46 3.4 3.4 -40.1 -
0.47 4.2 4.2 -38.8 -
0.48 5.0 5.0 -37.8 -
0.50 6.0 6.0 -37.1 -
0.52 7.0 7.0 -36.0 -
0.55 8.1 8.1 -35.1 -
0.58 9.4 9.4 -34.1 -
0.62 10.8 10.8 -33.6 -
0.66 12.3 12.3 -32.9 -
0.72 13.9 13.9 -32.2 -
0.78 15.6 15.6 -32.0 -
0.85 17.6 17.6 -32.0 -57.9
0.93 20.0 20.0 -31.9 -59.8
1.02 22.3 22.3 -32.1 -57.7
1.13 25.0 24.9 -33.1 -58.6
1.24 27.8 27.8 -33.8 -57.0
1.36 31.0 30.9 -35.1 -56.4
1.49 34.0 33.9 -36.4 -56.3
1.61 36.8 36.8 -38.2 -57.7
1.72 39.3 39.2 -40.0 -57.0
1.82 41.4 41.3 -42.1 -57.3
1.92 43.1 43.0 -43.8 -56.6
2.00 44.5 44.4 -45.2 -56.7
2.08 45.5 45.3 -46.8 -57.0
2.15 46.2 46.0 -47.4 -56.3
2.21 46.8 46.6 -48.2 -56.6
2.26 47.5 47.3 -48.1 -57.2
2.29 48.3 48.0 -45.7 -58.0
2.31 48.9 48.5 -43.1 -58.3
2.33 49.5 49.0 -41.1 -59.5
2.35 49.9 49.3 -39.6 -60.5
- AN-VHF-053-A-
Application Note for Silicon RF Power Semiconductors
9/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
P.A.E.
@ f=155MHz, Vgg=3.5V (Idq=405mA)
- AN-VHF-053-A-
Pin Pin Po Po Gp R.L. Idd ηT
2fo 3fo
[dBm] [mW] [dBm] [W] [dB] [dB] [A] [%] [%] [dBc] [dBc]
-10.03 0.10
-9.01 0.13
-8.00 0.16
-6.97 0.20
-5.98 0.25
-5.01 0.32
-4.01 0.40
-2.97 0.50
-2.02 0.63
-0.99 0.80
-0.01 1.00
0.97 1.25
1.96 1.57
3.02 2.00
3.99 2.50
4.99 3.16
5.98 3.96
6.98 4.99
7.99 6.29
9.02 7.97
9.98 9.96
10.95 12.46
11.99 15.81
13.00 19.97
13.97 24.95
15.00 31.62
16.01 39.87
17.02 50.36
17.99 62.90
19.03 80.07
20.00 100.00
22.2 0.17 32.2 -7.1
23.2 0.21 32.2 -6.6
24.1 0.26 32.1 -6.5
25.0 0.32 32.0 -5.6
25.9 0.39 31.9 -4.7
26.8 0.48 31.8 -5.3
27.7 0.58 31.7 -4.8
28.6 0.72 31.6 -5.4
29.4 0.87 31.4 -5.2
30.3 1.08 31.3 -5.2
31.2 1.32 31.2 -5.2
32.1 1.61 31.1 -5.3
33.0 1.98 31.0 -5.4
33.9 2.43 30.8 -5.5
34.6 2.90 30.6 -5.5
35.3 3.41 30.3 -5.6
35.9 3.94 30.0 -5.6
36.5 4.47 29.5 -5.6
37.0 5.01 29.0 -5.6
37.4 5.54 28.4 -5.6
37.8 6.02 27.8 -5.6
38.1 6.45 27.1 -5.6
38.4 6.87 26.4 -5.6
38.6 7.23 25.6 -5.6
38.8 7.54 24.8 -5.7
38.9 7.81 23.9 -5.7
39.1 8.05 23.0 -5.9
39.2 8.24 22.1 -6.2
39.2 8.37 21.2 -6.7
39.3 8.49 20.3 -7.4
39.3 8.56 19.3 -8.1
0.47 4.9 4.9 -47.5 -
0.48 6.0 6.0 -47.3 -
0.50 7.2 7.2 -46.7 -
0.52 8.6 8.6 -45.7 -
0.54 10.2 10.2 -44.3 -
0.56 11.8 11.8 -43.8 -
0.60 13.7 13.7 -43.3 -
0.64 15.8 15.8 -42.6 -
0.68 17.9 17.9 -41.7 -
0.74 20.4 20.4 -41.5 -
0.80 23.1 23.1 -40.7 -
0.87 26.0 26.0 -41.3 -
0.94 29.2 29.2 -41.8 -
1.03 32.8 32.7 -42.1 -
1.12 36.0 36.0 -43.3 -
1.21 39.4 39.4 -44.3 -
1.29 42.5 42.4 -45.6 -
1.38 45.3 45.3 -46.0 -65.9
1.46 47.9 47.8 -45.9 -68.2
1.54 50.1 50.0 -45.8 -66.1
1.62 52.0 51.9 -44.6 -67.3
1.69 53.3 53.2 -44.6 -66.3
1.77 54.4 54.3 -44.1 -65.5
1.84 55.1 54.9 -43.6 -67.9
1.90 55.4 55.2 -43.1 -66.2
1.97 55.5 55.3 -42.9 -66.5
2.03 55.4 55.2 -42.7 -66.4
2.08 55.3 55.0 -42.4 -67.2
2.12 55.2 54.8 -42.3 -67.3
2.15 55.3 54.8 -42.5 -66.1
2.16 55.5 54.8 -42.4 -68.1
Application Note for Silicon RF Power Semiconductors
10/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
P.A.E.
@ f=175MHz, Vgg=3.5V (Idq=405mA)
- AN-VHF-053-A-
Pin Pin Po Po Gp R.L. Idd ηT
2fo 3fo
[dBm] [mW] [dBm] [W] [dB] [dB] [A] [%] [%] [dBc] [dBc]
-10.00 0.10
-8.99 0.13
-8.00 0.16
-7.00 0.20
-5.98 0.25
-5.00 0.32
-3.98 0.40
-2.99 0.50
-2.00 0.63
-1.00 0.79
-0.01 1.00
0.98 1.25
2.00 1.58
2.97 1.98
3.96 2.49
5.01 3.17
6.02 4.00
6.97 4.98
7.98 6.29
8.99 7.93
9.98 9.94
11.06 12.78
12.01 15.89
13.02 20.03
13.97 24.92
15.01 31.68
16.00 39.77
17.01 50.26
18.02 63.32
19.03 80.03
19.98 99.60
22.5 0.18 32.5 -7.9 0.48
23.5 0.22 32.4 -7.7 0.49
24.4 0.28 32.4 -7.9 0.51
25.3 0.34 32.3 -8.5 0.53
26.3 0.42 32.3 -8.9 0.55
27.2 0.52 32.2 -9.4 0.58
28.1 0.65 32.1 -7.1 0.62
29.0 0.79 32.0 -7.3 0.66
29.9 0.97 31.9 -8.1 0.71
30.8 1.19 31.8 -7.7 0.77
31.6 1.45 31.6 -7.6 0.83
32.5 1.76 31.5 -7.8 0.90
33.3 2.12 31.3 -8.2 0.99
34.0 2.51 31.0 -8.2 1.07
34.7 2.92 30.7 -8.0 1.16
35.3 3.36 30.3 -8.1 1.25
35.8 3.80 29.8 -8.1 1.33
36.2 4.19 29.3 -8.2 1.41
36.6 4.61 28.7 -8.1 1.49
37.0 5.02 28.0 -8.2 1.57
37.3 5.41 27.4 -8.2 1.65
37.6 5.80 26.6 -8.2 1.73
37.9 6.16 25.9 -8.2 1.81
38.1 6.49 25.1 -8.2 1.88
38.3 6.78 24.3 -8.2 1.95
38.5 7.06 23.5 -8.3 2.03
38.6 7.29 22.6 -8.5 2.10
38.7 7.49 21.7 -8.7 2.16
38.8 7.64 20.8 -9.0 2.22
38.9 7.76 19.9 -9.5 2.27
38.9 7.84 19.0 -9.9 2.30
5.2 5.2 -51.3 -
6.3 6.3 -53.2 -
7.5 7.5 -51.3 -
9.0 9.0 -52.2 -
10.7 10.7 -51.4 -
12.5 12.5 -51.0 -
14.6 14.6 -50.8 -
16.8 16.8 -49.2 -
19.2 19.2 -49.6 -
21.7 21.7 -49.7 -
24.4 24.4 -48.6 -
27.2 27.2 -49.1 -
30.0 30.0 -50.1 -
32.7 32.7 -51.9 -
35.2 35.1 -53.6 -
37.6 37.6 -55.5 -66.0
39.7 39.7 -60.6 -64.9
41.4 41.4 -64.7 -65.3
43.1 43.1 -64.5 -66.4
44.6 44.5 -59.9 -64.3
45.8 45.7 -56.3 -65.1
46.9 46.8 -54.8 -64.9
47.7 47.6 -52.4 -63.6
48.3 48.2 -51.3 -63.2
48.6 48.5 -50.4 -63.0
48.7 48.5 -50.0 -64.4
48.7 48.4 -49.6 -63.9
48.5 48.2 -49.4 -64.0
48.2 47.8 -49.3 -63.6
47.9 47.5 -48.9 -64.2
47.7 47.1 -49.3 -63.3
Application Note for Silicon RF Power Semiconductors
11/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
@f=155MHz
@f=135MHz
@f=175MHz
@f=155MHz
@f=135MHz
@f=175MHz
@f=155MHz
@f=135MHz
@f=175MHz
Pout vs. Vgg characteristics
@ Vdd=7.2V, Pi=30mW (14.77dBm), f=135MHz, 155MHz, 175MHz
- AN-VHF-053-A-
10
9
8
7
6
5
Po[W]
4
3
2
1
0
0 1 2 3 4
Vgg[V]
60
50
40
30
ηT[%]
3.0
2.5
2.0
1.5
Idd[A]
1.0
0.5
0.0
0 1 2 3 4
Vgg[V]
20
10
0
0 1 2 3 4
Vgg[V]
Application Note for Silicon RF Power Semiconductors
12/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
P.A.E.
P.A.E.
Pout vs. Vgg characteristics data
@ f=135MHz, Pi=30mW (14.77dBm)
Vgg Idq Po Po Idd R.L. ηT
[V] [A] [dBm] [W] [A] [dB] [%] [%] [dBc] [dBc]
1.00 0.003 -22.0 0.0 0.08 -6.1 0.0 -5.5 -0.3 -
1.20 0.003 -19.7 0.0 0.09 -5.9 0.0 -4.7 -1.9 -
1.40 0.003 -1.2 0.0 0.11 -5.7 0.1 -3.7 -2.4 -
1.60 0.003 10.3 0.0 0.16 -5.5 0.9 -1.7 -6.0 -
1.80 0.003 18.2 0.1 0.27 -5.4 3.4 1.9 -11.6 -
2.00 0.003 25.3 0.3 0.50 -5.3 9.5 8.6 -17.4 -
2.20 0.003 30.3 1.1 0.82 -5.2 18.1 17.6 -21.8 -50.1
2.40 0.003 33.7 2.3 1.19 -5.1 27.4 27.0 -26.2 -50.9
2.60 0.005 35.7 3.7 1.49 -5.0 34.7 34.4 -29.5 -51.8
2.80 0.018 36.9 4.9 1.72 -4.9 39.5 39.2 -33.1 -52.3
3.00 0.050 37.6 5.7 1.89 -4.8 42.5 42.3 -36.9 -53.6
3.20 0.130 38.1 6.4 2.03 -4.7 44.5 44.3 -41.1 -55.2
3.40 0.303 38.5 7.0 2.14 -4.7 46.1 45.9 -46.5 -55.9
3.60 0.585 38.8 7.6 2.25 -4.8 47.4 47.2 -46.9 -57.6
3.80 0.968 39.1 8.1 2.34 -5.0 48.5 48.3 -42.1 -59.7
4.00 1.420 39.3 8.6 2.44 -5.2 49.5 49.3 -37.9 -62.0
2fo 3fo
- AN-VHF-053-A-
@ f=155MHz, Pi=30mW (14.77dBm)
Vgg Idq Po Po Idd R.L. ηT
2fo 3fo
[V] [A] [dBm] [W] [A] [dB] [%] [%] [dBc] [dBc]
1.00 0.003 -20.2 0.0 0.09 -9.8 0.0 -4.6 -10.4 -
1.20 0.003 -15.8 0.0 0.11 -9.3 0.0 -3.8 -14.7 -
1.40 0.003 4.1 0.0 0.14 -8.8 0.2 -2.7 -18.2 -
1.60 0.003 15.3 0.0 0.22 -8.4 2.2 0.3 -19.4 -
1.80 0.003 23.0 0.2 0.37 -8.0 7.6 6.5 -23.0 -
2.00 0.003 29.3 0.9 0.66 -7.6 18.1 17.5 -28.2 -
2.20 0.003 32.9 2.0 0.95 -7.3 28.8 28.4 -33.9 -
2.40 0.003 35.2 3.3 1.21 -7.0 38.1 37.8 -39.5 -65.5
2.60 0.005 36.6 4.6 1.42 -6.7 45.0 44.7 -44.4 -64.2
2.80 0.018 37.5 5.6 1.58 -6.4 49.7 49.4 -45.8 -65.5
3.00 0.050 38.1 6.5 1.72 -6.2 52.7 52.4 -44.5 -63.9
3.20 0.130 38.5 7.1 1.82 -6.0 54.4 54.1 -43.8 -65.9
3.40 0.303 38.8 7.6 1.92 -5.8 55.4 55.2 -43.2 -66.9
3.60 0.585 39.0 8.0 1.99 -5.6 55.8 55.6 -42.8 -66.9
3.80 0.965 39.2 8.2 2.06 -5.5 55.9 55.7 -42.2 -67.3
4.00 1.418 39.3 8.5 2.13 -5.4 55.7 55.6 -42.2 -67.8
Application Note for Silicon RF Power Semiconductors
13/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
P.A.E.
@ f=175MHz, Pi=30mW (14.77dBm)
- AN-VHF-053-A-
Vgg Idq Po Po Idd R.L. ηT
2fo 3fo
[V] [A] [dBm] [W] [A] [dB] [%] [%] [dBc] [dBc]
1.00 0.003 -19.3 0.0 0.09 -17.2 0.0 -4.5 -11.4 -
1.20 0.003 -12.0 0.0 0.12 -16.2 0.0 -3.6 -19.8 -
1.40 0.003 8.1 0.0 0.16 -15.2 0.6 -2.0 -32.2 -
1.60 0.003 21.1 0.1 0.30 -14.3 5.9 4.5 -33.4 -
1.80 0.003 27.5 0.6 0.50 -13.4 15.8 15.0 -34.5 -
2.00 0.003 31.5 1.4 0.77 -12.6 25.7 25.1 -36.7 -
2.20 0.003 33.7 2.4 1.04 -11.8 31.7 31.3 -40.7 -
2.40 0.003 35.1 3.2 1.25 -11.1 36.1 35.7 -45.5 -
2.60 0.005 36.1 4.0 1.43 -10.5 39.5 39.2 -50.5 -62.5
2.80 0.018 36.8 4.8 1.59 -9.9 42.5 42.2 -60.1 -65.0
3.00 0.050 37.4 5.6 1.73 -9.4 44.9 44.7 -62.3 -65.4
3.20 0.130 37.9 6.2 1.85 -8.9 46.8 46.6 -54.8 -65.2
3.40 0.303 38.3 6.8 1.96 -8.4 48.3 48.1 -51.4 -64.8
3.60 0.585 38.6 7.3 2.06 -8.1 49.4 49.2 -49.3 -64.5
3.80 0.968 38.9 7.7 2.15 -7.8 50.2 50.0 -48.0 -63.8
4.00 1.420 39.1 8.1 2.23 -7.5 50.6 50.4 -46.8 -63.0
Application Note for Silicon RF Power Semiconductors
14/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
@f=155MHz
@f=135MHz
@f=175MHz
@f=155MHz
@f=175MHz
@f=155MHz
@f=135MHz
@f=175MHz
Pout vs. Vdd characteristics data
@ Vgg=3.5V (Idq=405mA), Pi=30mW (14.77dBm), f=135MHz, 155MHz, 175MHz
- AN-VHF-053-A-
14
12
10
8
Po[W]
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10 11
Vdd[V]
60
55
50
45
ηT[%]
3.0
2.5
2.0
1.5
Idd[V]
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 9 10 11
@f=135MHz
Vdd[V]
40
35
30
0 1 2 3 4 5 6 7 8 9 10 11
Vdd[V]
Application Note for Silicon RF Power Semiconductors
15/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
P.A.E.
@ f=135MHz, Pi=30mW (14.77dBm)
Vdd Idq Po Po R.L. Idd ηT P.A.E. 2fo 3fo
[V] [A] [dBm] [W] [dB] [A] [%] [%] [dBc] [dBc]
1.5 0.340 25.8 0.4 -10.6 0.55 46.4 42.8 -29.2 -
2.0 0.348 28.4 0.7 -10.9 0.72 48.6 46.5 -30.2 -
2.5 0.353 30.4 1.1 -10.9 0.89 49.9 48.5 -31.5 -
3.0 0.358 32.0 1.6 -10.4 1.05 50.6 49.6 -32.0 -
3.5 0.365 33.3 2.1 -9.8 1.21 50.8 50.1 -33.3 -
4.0 0.370 34.4 2.7 -8.9 1.37 50.8 50.2 -34.9 -62.6
4.5 0.378 35.3 3.4 -8.0 1.51 50.5 50.1 -36.6 -61.8
5.0 0.383 36.1 4.1 -7.2 1.65 50.0 49.6 -38.2 -61.1
5.5 0.390 36.8 4.8 -6.4 1.80 49.4 49.1 -40.7 -59.6
6.0 0.398 37.4 5.5 -5.7 1.92 48.6 48.3 -44.0 -58.0
6.5 0.405 38.0 6.3 -5.3 2.04 47.8 47.6 -46.9 -57.2
7.0 0.415 38.5 7.1 -4.9 2.16 47.1 46.9 -47.9 -55.7
7.5 0.423 38.9 7.8 -4.7 2.26 46.5 46.3 -47.7 -56.7
8.0 0.433 39.3 8.5 -4.5 2.35 45.8 45.6 -47.1 -56.2
8.5 0.443 39.7 9.3 -4.5 2.45 45.1 45.0 -46.3 -56.4
9.0 0.453 40.0 10.0 -4.5 2.53 44.4 44.3 -45.2 -56.3
9.5 0.463 40.3 10.7 -4.4 2.61 43.7 43.6 -44.7 -56.4
10.0 0.475 40.6 11.4 -4.4 2.68 42.9 42.8 -43.8 -56.6
- AN-VHF-053-A-
@ f=155MHz, Pi=30mW (14.77dBm)
Vdd Idq Po Po R.L. Idd ηT
2fo 3fo
[V] [A] [dBm] [W] [dB] [A] [%] [%] [dBc] [dBc]
1.5 0.350 25.7 0.4 -15.6 0.46 53.6 49.2 -41.2 -
2.0 0.355 28.2 0.7 -13.3 0.61 55.2 52.7 -41.1 -
2.5 0.363 30.2 1.0 -11.3 0.76 55.5 53.9 -42.0 -
3.0 0.368 31.8 1.5 -9.8 0.91 55.4 54.3 -41.7 -
3.5 0.373 33.1 2.0 -8.6 1.07 55.1 54.3 -42.1 -
4.0 0.378 34.2 2.7 -7.6 1.22 55.0 54.4 -42.2 -
4.5 0.385 35.2 3.3 -6.9 1.36 55.0 54.5 -42.4 -
5.0 0.390 36.1 4.1 -6.5 1.49 55.0 54.6 -42.5 -65.4
5.5 0.398 36.9 4.9 -6.1 1.61 55.3 54.9 -43.0 -67.3
6.0 0.405 37.5 5.7 -5.9 1.72 55.4 55.1 -42.7 -66.9
6.5 0.410 38.2 6.5 -5.8 1.82 55.7 55.4 -42.9 -66.5
7.0 0.418 38.7 7.4 -5.7 1.92 55.7 55.5 -42.7 -66.3
7.5 0.428 39.2 8.3 -5.7 2.01 55.6 55.4 -42.9 -66.9
8.0 0.435 39.7 9.2 -5.6 2.10 55.4 55.3 -43.2 -65.7
8.5 0.445 40.1 10.2 -5.6 2.19 55.2 55.0 -43.2 -64.8
9.0 0.455 40.5 11.1 -5.6 2.27 54.8 54.7 -43.0 -65.3
9.5 0.465 40.8 12.1 -5.6 2.34 54.5 54.4 -43.2 -66.1
10.0 0.475 41.1 13.0 -5.6 2.42 54.0 53.8 -43.5 -65.1
Application Note for Silicon RF Power Semiconductors
16/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
P.A.E.
@ f=175MHz, Pi=30mW (14.77dBm)
Vdd Idq Po Po R.L. Idd ηT
2fo 3fo
[V] [A] [dBm] [W] [dB] [A] [%] [%] [dBc] [dBc]
1.5 0.350 25.6 0.4 -11.5 0.54 44.9 41.1 -45.5 -
2.0 0.355 28.1 0.6 -10.6 0.71 46.1 44.0 -46.8 -
2.5 0.360 30.1 1.0 -9.9 0.88 46.6 45.2 -46.5 -
3.0 0.368 31.6 1.5 -9.4 1.04 47.0 46.0 -47.2 -
3.5 0.373 32.9 2.0 -9.1 1.19 47.3 46.6 -47.4 -
4.0 0.378 34.0 2.5 -8.8 1.33 47.7 47.1 -48.1 -63.6
4.5 0.385 35.0 3.1 -8.7 1.46 48.1 47.7 -48.2 -61.1
5.0 0.390 35.8 3.8 -8.5 1.57 48.5 48.1 -48.8 -63.5
5.5 0.398 36.5 4.5 -8.4 1.68 48.7 48.4 -49.1 -62.5
6.0 0.405 37.2 5.2 -8.3 1.79 48.9 48.7 -49.5 -64.6
6.5 0.413 37.7 5.9 -8.3 1.88 49.0 48.8 -49.7 -63.1
7.0 0.420 38.3 6.7 -8.3 1.98 49.0 48.7 -50.1 -65.0
7.5 0.428 38.8 7.5 -8.2 2.07 48.8 48.6 -50.3 -63.6
8.0 0.438 39.2 8.3 -8.2 2.15 48.6 48.4 -50.9 -64.2
8.5 0.445 39.6 9.1 -8.2 2.24 48.4 48.2 -50.9 -64.9
9.0 0.455 40.0 9.9 -8.2 2.31 48.0 47.9 -51.4 -65.0
9.5 0.465 40.3 10.7 -8.3 2.39 47.6 47.5 -51.9 -64.7
10.0 0.478 40.6 11.6 -8.3 2.47 47.2 47.1 -52.2 -65.4
- AN-VHF-053-A-
Application Note for Silicon RF Power Semiconductors
17/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
1.5mm
3.5mm
6.5mmC14mm
R6R9C12
C5
L4
C9C8C11
C13
3.5m
mWL6
RD01MUS2R5R7
R10
C17
6mm
C6
C19
4mmL1C3R2L2
C10C23mm
RD07MUS2B
8.5mm
4mm
.5mm
R3
11mmC72mm
8mm
5mmR8Vdd
Vgg
RF-OUT
Equivalent circuit (@f=135 to 175MHz)
- AN-VHF-053-A-
1mm
L3
C20
1.5mm
C18
C16
C15
C14
L5
W
1mm
1.5mm
W
1.5mm
C4
C21
1.5mm
R1
W
2.5mm
R4
1mm
<N o te>
Bo a rd me terial : G la s s- E po x y s u bs trate ( ε r= 4 .8, h = 0 . 8 mm)
Micro strip lin e w id th = 1 . 3 mm
W l in e w id th = 1 . 0mm
RF-in
Application Note for Silicon RF Power Semiconductors
18/19
RD01MUS2 & RD07MUS2B RF characteristics data at 135 to 175MHz. (Vdd=7.2V)
Diameter:0.40mm,φ1.66mm(the out side diameter)
Diameter:0.40mm,φ2.46mm(the out side diameter)
- AN-VHF-053-A-
Parts Type Symbol Value Type name Vender
Capasitor
Resistance
Inductance
C1 100pF GRM1882C1H101JA01D Murata Manufacturing Co.,Ltd.
C2 20pF GRM1882C1H200JA01D Murata Manufacturing Co.,Ltd.
C3 47pF GRM1882C1H470JA01D Murata Manufacturing Co.,Ltd.
C4 62pF GRM1882C1H620JA01D Murata Manufacturing Co.,Ltd.
C5 39pF GRM1882C1H390JA01D Murata Manufacturing Co.,Ltd.
C6 82pF GRM1882C1H820JA01D Murata Manufacturing Co.,Ltd.
C7 47pF GRM1882C1H470JA01D Murata Manufacturing Co.,Ltd.
C8 150pF GRM1882C1H151JA01D Murata Manufacturing Co.,Ltd.
C9 22pF GRM1882C1H220JA01D Murata Manufacturing Co.,Ltd.
C10 22pF GRM1882C1H220JA01D Murata Manufacturing Co.,Ltd.
C11 100pF GRM1882C1H101JA01D Murata Manufacturing Co.,Ltd.
C12 1000pF GRM1882C1H102JA01D Murata Manufacturing Co.,Ltd.
C13 10000pF GRM1882C1H103JA01D Murata Manufacturing Co.,Ltd.
C14 1000pF GRM1882C1H102JA01D Murata Manufacturing Co.,Ltd.
C15 10000pF GRM1882C1H103JA01D Murata Manufacturing Co.,Ltd.
C16 1000pF GRM1882C1H102JA01D Murata Manufacturing Co.,Ltd.
C17 10000pF GRM1882C1H103JA01D Murata Manufacturing Co.,Ltd.
C18 1000pF GRM1882C1H102JA01D Murata Manufacturing Co.,Ltd.
C19 10000pF GRM1882C1H103JA01D Murata Manufacturing Co.,Ltd.
C20 22nF UVZ1H220MDD NICHICON COPORATION
C21 22uF UVZ1H220MDD NICHICON COPORATION
R1 10Ω RPC10-100J TAIYOSHA ELECTRIC CO.,Ltd.
R2 300Ω RPC10-301J TAIYOSHA ELECTRIC CO.,Ltd.
R3 3.3Ω RPC05-3R3J TAIYOSHA ELECTRIC CO.,Ltd.
R4 1KΩ RPC10-102J TAIYOSHA ELECTRIC CO.,Ltd.
R5 4.7KΩ RPC10-472J TAIYOSHA ELECTRIC CO.,Ltd.
R6 56KΩ RPC05-563J TAIYOSHA ELECTRIC CO.,Ltd.
R7 36KΩ RPC05-363J TAIYOSHA ELECTRIC CO.,Ltd.
R8 30KΩ RPC05-303J TAIYOSHA ELECTRIC CO.,Ltd.
R9 20KΩ RPC10-203J TAIYOSHA ELECTRIC CO.,Ltd.
R10 20KΩ RPC10-203J TAIYOSHA ELECTRIC CO.,Ltd.
L1 72nH LLQ1608-A72N TOKO Co.,Ltd.
L2
L3
Diameter:0.40mm,φ2.46mm(the out side diameter)
L4
Diameter:0.23mm,φ1.66mm(the out side diameter)
L5
L6
Diameter:0.23mm,φ1.66mm(the out side diameter)
9nH Enameled wire 4Turns,
16nH Enameled wire 4Turns,
28nH Enameled wire 6Turns,
25nH Enameled wire 5Turns,
8nH Enameled wire 2Turns,
4804A yc corporation
4004C yc corporation
2306C yc corporation
4005A yc corporation
2302S yc corporation
GND
RF-in
Vgg
RD01MUS2
Vdd
RD07MUS2
GND
RF-out
Application Note for Silicon RF Power Semiconductors
19/19
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