< Silicon RF Power MOS FET (Discrete) >
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
DESCRIPTION
RD01MUS1 is a MOS FET type transistor specifically
OUTLINE DRAWING
designed for VHF/UHF RF amplifiers applications.
4.4+/-0.1
TYPE NAME
FEATURES
1.6+/-0.1
LOT No.
High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
High Efficiency: 65%typ.
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
2.5+/-0.1
MIN
0.8
0.4+/-0.07
1 2 3
φ0.1
1.5+/-0.1
0.5+/-0.07
1.5+/-0.1
0.4+/-0.07
0.1 MAX
Terminal No.
UNIT : mm
RoHS COMPLIANT
RD01MUS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
However, It is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
1.5+/-0.1
1 : GATE
2 : SOURSE
3 : DRAIN
0.4
3.9+/-0.3
+0.03
-0.05
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-10 V
Pch Channel dissipation Tc=25
°C
Pin Input Power Zg=Zl=50
3.6 W
100 mW
ID Drain Current - 600 mA
Tch Channel Temperature - 150
Tstg Storage temperature - -40 to +125
Rth j-c Thermal resistance Junction to case 34.5
Note: Above parameters are guaranteed independently.
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
I
DSS
I
GSS
Zero gate voltage drain current VDS=17V, VGS=0V - - 50 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
MIN TYP MAX
Vth Gate threshold Voltage VDS=12V, IDS=1mA 1.3 1.8 2.3 V
Pout Output power 0.8 1.4 - W
D Drain efficiency
Note: Above parameters, ratings, limits and conditions are subject to change.
VDD=7.2V, Pin=30mW
f=520MHz,Idq=100mA
LIMITS UNIT
50 65 - %
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
Coss(pF)
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
4
...
AMBIENT TEMPERATURE
*1:The materi al of thePCB
Glass epoxy(t= 0.6 mm)
3
On PCB(*1) with Heat-sink
2
1
On PCB(*1)
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds -Ids CHARACTERISTICS
2.5
Ta=+25°C
2
1.5
Ids(A)
1
0.5
0
0 2 4 6 8 10
Vds(V)
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Vgs=4V
Vgs=3V
Vgs -Ids CHARACTERISTICS
1.0
Ta=+25°C
Vds=10V
0.8
0.6
Ids(A)
0.4
0.2
0.0
0 1 2 3 4 5
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
20
Ta=+25°C
18
f=1MHz
16
14
12
10
Ciss(pF)
8
6
4
2
0
0 5 10 15 20
Vds(V)
20
18
16
14
12
10
8
6
4
2
0
0 5 10 15 20
Publication Date : Oct．2011
Vds VS. Coss CHARACTERISTICS
Ta=+25°C
f=1MHz
Vds(V)
Vds VS. Crss CHARACTERISTICS
4
Ta=+25°C
f=1MHz
3
2
Crss (pF)
1
0
0 5 10 15 20
Vds(V)
2
< Silicon RF Power MOS FET (Discrete) >
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
35
30
25
Gp
Po
20
15
10
Po(dBm) , Gp(dB) , Idd(A)
5
0
-10 0 10 20
Pin(dBm)
Vdd-Po CHARACTERISTICS
4.0
Ta=25°C
f=520MHz
3.5
Pin=30mW
Idq=100mA
3.0
Zg=ZI=50 ohm
2.5
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=100mA
Po
Pin-Po CHARACTERISTICS
100
90
80
η
ｄ
70
2.0
1.8
1.6
1.4
1.2
Po
ηd
100
80
60
1.0
ηd(%)
60
50
40
30
0.8
Pout(W) , Idd(A)
0.6
0.4
Ta=25°C
f=520MHz
Vdd=7.2V
Idd
Idq=100mA
0.2
0.0
40
20
0
ηd(%)
0 20 40 60
Pin(mW)
0.8
0.7
0.6
0.5
Idd
2.0
Po(W)
1.5
1.0
0.5
0.0
4 6 8 10 12 14
Vdd(V )
0.4
Idd(A)
0.3
0.2
0.1
0.0
Publication Date : Oct．2011
3
< Silicon RF Power MOS FET (Discrete) >
RF-OUT
3pF
520MHz Zin* Zout*
Zin* =3.11+j11.56
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
TEST CIRCUIT(f=520MHz)
C1
18mm
W
4.7kOHM
4mm
RF-in
L1：Enameled wire 5 Turns 、D：0.43mm、2.46mmO.D
C1、C2:1000ｐF、0.022μF in parallel
30mm
62pF
13mm
24pF
4mm
68 OHM
240pF
Vgg
Vdd
C2
5mm
W
68pF
W
L4
20.5mm
11mm
RD01MUS1
5.5mm
Note:Boad material Glass epoxi substrate
Micro strip line width=1.0mm、50 OHM、er:4.8、t=0.6mm
6.5mm
3mm
3pF
10pF
10μF、50V
L3
25.5mm
4mm
62pF
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
Zo=50
Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W
520MHz Zin*
Zout*=11.64+j4.74
520MHz Zout*
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of output impedance
Publication Date : Oct．2011
4
< Silicon RF Power MOS FET (Discrete) >
RD01MSU1 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
100
0.927
-77.0
19.536
132.3
0.043
41.3
0.772
-63.0
150
0.875
-101.2
15.657
116.5
0.050
26.5
0.687
-83.1
200
0.833
-117.9
12.662
105.0
0.053
16.1
0.630
-97.3
250
0.811
-129.5
10.427
96.2
0.054
8.4
0.600
-107.1
300
0.798
-138.0
8.814
89.3
0.053
2.6
0.588
-114.4
350
0.791
-144.5
7.548
83.3
0.052
-2.4
0.583
-120.1
400
0.790
-149.7
6.541
78.2
0.051
-6.6
0.590
-124.6
450
0.788
-154.1
5.789
73.5
0.049
-9.9
0.597
-128.4
500
0.794
-158.0
5.106
69.0
0.047
-13.3
0.608
-131.7
520
0.796
-159.2
4.876
67.5
0.046
-14.1
0.615
-133.1
550
0.798
-161.2
4.576
65.2
0.045
-15.8
0.622
-134.8
600
0.801
-164.2
4.120
61.3
0.043
-18.5
0.636
-137.3
650
0.807
-167.0
3.714
58.0
0.041
-21.0
0.650
-140.1
700
0.813
-169.3
3.389
54.7
0.039
-22.3
0.666
-142.4
750
0.817
-171.6
3.092
51.3
0.036
-24.9
0.680
-144.6
800
0.825
-174.0
2.820
48.6
0.033
-25.7
0.694
-146.8
850
0.831
-176.0
2.616
46.0
0.031
-26.8
0.711
-148.8
900
0.837
-178.0
2.401
42.8
0.028
-27.8
0.723
-150.9
950
0.845
-179.9
2.207
40.9
0.026
-27.3
0.734
-152.9
1000
0.851
178.2
2.076
38.4
0.023
-27.0
0.749
-154.5
1050
0.857
176.5
1.912
35.5
0.021
-26.3
0.760
-156.3
1100
0.862
174.7
1.773
34.0
0.018
-23.8
0.771
-158.2
RD01MSU1 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
100
0.945
-72.3
19.517
135.2
0.039
44.5
0.742
-57.4
150
0.896
-96.7
15.937
119.5
0.046
29.2
0.665
-76.6
200
0.856
-113.9
13.050
107.7
0.049
18.5
0.612
-90.6
250
0.833
-126.2
10.830
98.6
0.050
11.2
0.581
-100.4
300
0.819
-135.1
9.194
91.6
0.050
5.0
0.568
-107.8
350
0.810
-141.9
7.890
85.3
0.049
-0.3
0.565
-113.8
400
0.806
-147.7
6.868
80.1
0.047
-4.2
0.571
-118.5
450
0.804
-152.2
6.084
75.3
0.046
-7.7
0.580
-122.3
500
0.808
-156.4
5.382
70.7
0.044
-11.0
0.591
-126.1
520
0.809
-157.8
5.139
69.1
0.044
-12.4
0.596
-127.5
550
0.812
-159.9
4.831
66.7
0.042
-13.7
0.605
-129.4
600
0.813
-163.0
4.356
62.7
0.040
-16.2
0.618
-132.2
650
0.819
-166.0
3.931
59.3
0.038
-18.7
0.633
-135.1
700
0.824
-168.6
3.597
56.0
0.036
-20.8
0.649
-137.6
750
0.827
-171.0
3.283
52.4
0.034
-22.3
0.664
-140.1
800
0.834
-173.3
2.991
49.8
0.031
-23.7
0.678
-142.5
850
0.841
-175.5
2.779
47.1
0.029
-24.6
0.695
-144.5
900
0.845
-177.4
2.554
43.8
0.026
-25.9
0.708
-146.7
950
0.852
-179.4
2.350
41.9
0.024
-25.4
0.720
-148.9
1000
0.857
178.6
2.209
39.4
0.022
-24.3
0.736
-150.7
1050
0.864
176.9
2.035
36.3
0.019
-23.5
0.747
-152.4
1100
0.868
175.0
1.889
34.8
0.017
-20.1
0.759
-154.6
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
S11 S21 S12 S22
S11 S21 S12 S22
Publication Date : Oct．2011
5
< Silicon RF Power MOS FET (Discrete) >
have
until cold after switch
his products without cause damage for human and
details
copies of the formal
(RF power transistors) are designed
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
predicted operating life time of
an authorized Mitsubishi
therefore
device is
It is
sink in conjunction with other cooling methods as needed (fan,
lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
the
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
, please refer the last page
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
for consumer mobile communication terminals and were not specifically designed for use in
under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.
8.
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
6
< Silicon RF Power MOS FET (Discrete) >
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
programs, and algorithms, please be sure to evaluate all information as a total system before making a final
decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no
responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be exported
under a license from the Japanese government and cannot be imported into a country other than the approved
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
7
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