MITSUBISHI RD01MUS1 User Manual
< Silicon RF Power MOS FET (Discrete) >
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
DESCRIPTION
RD01MUS1 is a MOS FET type transistor specifically
OUTLINE DRAWING
designed for VHF/UHF RF amplifiers applications.
4.4+/-0.1
TYPE NAME
FEATURES
1.6+/-0.1
LOT No.
High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
High Efficiency: 65%typ.
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
2.5+/-0.1
MIN
0.8
0.4+/-0.07
1 2 3
φ0.1
1.5+/-0.1
0.5+/-0.07
1.5+/-0.1
0.4+/-0.07
0.1 MAX
Terminal No.
UNIT : mm
RoHS COMPLIANT
RD01MUS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
However, It is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
1.5+/-0.1
1 : GATE
2 : SOURSE
3 : DRAIN
0.4
3.9+/-0.3
+0.03
-0.05
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-10 V
Pch Channel dissipation Tc=25
°C
Pin Input Power Zg=Zl=50
3.6 W
100 mW
ID Drain Current - 600 mA
Tch Channel Temperature - 150
Tstg Storage temperature - -40 to +125
Rth j-c Thermal resistance Junction to case 34.5
Note: Above parameters are guaranteed independently.
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
I
DSS
I
GSS
Zero gate voltage drain current VDS=17V, VGS=0V - - 50 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
MIN TYP MAX
Vth Gate threshold Voltage VDS=12V, IDS=1mA 1.3 1.8 2.3 V
Pout Output power 0.8 1.4 - W
D Drain efficiency
Note: Above parameters, ratings, limits and conditions are subject to change.
VDD=7.2V, Pin=30mW
f=520MHz,Idq=100mA
LIMITS UNIT
50 65 - %
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
Coss(pF)
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
4
...
AMBIENT TEMPERATURE
*1:The materi al of thePCB
Glass epoxy(t= 0.6 mm)
3
On PCB(*1) with Heat-sink
2
1
On PCB(*1)
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds -Ids CHARACTERISTICS
2.5
Ta=+25°C
2
1.5
Ids(A)
1
0.5
0
0 2 4 6 8 10
Vds(V)
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Vgs=4V
Vgs=3V
Vgs -Ids CHARACTERISTICS
1.0
Ta=+25°C
Vds=10V
0.8
0.6
Ids(A)
0.4
0.2
0.0
0 1 2 3 4 5
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
20
Ta=+25°C
18
f=1MHz
16
14
12
10
Ciss(pF)
8
6
4
2
0
0 5 10 15 20
Vds(V)
20
18
16
14
12
10
8
6
4
2
0
0 5 10 15 20
Publication Date : Oct．2011
Vds VS. Coss CHARACTERISTICS
Ta=+25°C
f=1MHz
Vds(V)
Vds VS. Crss CHARACTERISTICS
4
Ta=+25°C
f=1MHz
3
2
Crss (pF)
1
0
0 5 10 15 20
Vds(V)
2
< Silicon RF Power MOS FET (Discrete) >
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
35
30
25
Gp
Po
20
15
10
Po(dBm) , Gp(dB) , Idd(A)
5
0
-10 0 10 20
Pin(dBm)
Vdd-Po CHARACTERISTICS
4.0
Ta=25°C
f=520MHz
3.5
Pin=30mW
Idq=100mA
3.0
Zg=ZI=50 ohm
2.5
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=100mA
Po
Pin-Po CHARACTERISTICS
100
90
80
η
ｄ
70
2.0
1.8
1.6
1.4
1.2
Po
ηd
100
80
60
1.0
ηd(%)
60
50
40
30
0.8
Pout(W) , Idd(A)
0.6
0.4
Ta=25°C
f=520MHz
Vdd=7.2V
Idd
Idq=100mA
0.2
0.0
40
20
0
ηd(%)
0 20 40 60
Pin(mW)
0.8
0.7
0.6
0.5
Idd
2.0
Po(W)
1.5
1.0
0.5
0.0
4 6 8 10 12 14
Vdd(V )
0.4
Idd(A)
0.3
0.2
0.1
0.0
Publication Date : Oct．2011
3
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