< Silicon RF Power MOS FET (Discrete) >
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
DESCRIPTION
OUTLINE DRAWING
RD00HVS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
FEATURES
High power gain
Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
TYPE NAME
2.5+/-0.1
MIN
0.8
0.4+/-0.07
4.4+/-0.1
1.6+/-0.1
φ0.1
1 2 3
1.5+/-0.1
1.5+/-0.1
0.5+/-0.07
LOT No.
0.4+/-0.07
0.1 MAX
RoHS COMPLIANT
RD00HVS1-101,T113 is a RoHS compliant products.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
1.5+/-0.1
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
0.4
3.9+/-0.3
+0.03
-0.05
ABSOLUTE MAXIMUM RATINGS (Tc=25 deg.C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-10 V
Pch Channel dissipation Tc=25
°C
Pin Input Power Zg=Zl=50
3.1 W
20 mW
ID Drain Current - 200 mA
Tch Channel Temperature - 150
Tstg Storage temperature - -40 to +125
Rth j-c Thermal resistance Junction to case 40
Note: Above parameters are guaranteed independently.
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25deg.C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
MIN TYP MAX.
I
DSS
I
GSS
Zero gate voltage drain current VDS=17V, VGS=0V - - 25 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 2 3 V
Pout Output power 0.5 0.8 - W
Note: Above parameters, ratings, limits and conditions are subject to change.
Drain efficiency
D
VDD=12.5V, Pin=5mW,
f=175MHz,Idq=50mA
LIMITS UNIT
50 60 - %
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
Ciss(pF)
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
4
...
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
3
1.0
0.8
Vgs-Ids CHARACTERISTICS
Ta=+25°C
Vds=10V
On PCB(*1) with Heat-sink
2
1
On PCB(*1)
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
1.5
Ta=+25°C
1
Ids(A)
0.5
0
0 2 4 6 8 10
Vds(V)
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Vgs=4V
Vgs=3V
0.6
Ids(A)
0.4
0.2
0.0
0 1 2 3 4 5
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
20
Ta=+25°C
18
f=1MHz
16
14
12
10
8
6
4
2
0
0 5 10 15 20
Vds(V)
20
18
16
14
12
10
8
Coss(pF)
6
4
2
0
Publication Date : Oct．2011
Vds VS. Cos s CHARACTERISTICS
Ta=+25°C
f=1MHz
0 5 10 15 20
Vds(V)
Vds V S. Crs s CHARACTERISTICS
4
Ta=+25°C
f=1MHz
3
2
Crss (pF)
1
0
0 5 10 15 20
Vds(V)
2
< Silicon RF Power MOS FET (Discrete) >
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
35
30
Gp
Po
25
20
η
Idd(A)
15
10
Po(dBm) , Gp(dB) ,
5
ｄ
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=50mA
0
100
90
80
70
60
50
40
30
d(%)
η
1.2
1.0
0.8
0.6
0.4
Pout(W) , Idd(A)
0.2
0.0
-15 -10 -5 0 5 10 15
Pin(dBm)
Pin-Po CHARACTERISTICS
35
30
25
Gp
Po
20
15
Idd(A)
10
Po(dBm) , Gp(dB) ,
5
Ta=+25°C
f=520MHz
Vdd=12.5V
Idq=50mA
η
ｄ
0
100
90
80
70
60
50
40
30
d(%)
η
1.4
1.2
1.0
0.8
0.6
0.4
Pout(W) , Idd(A)
0.2
0.0
-15 -10 -5 0 5 10 15
Pin(dBm)
Pin-Po CHARACTERISTICS
Po
ηd
Ta=25°C
f=175MHz
Vdd=12.5V
Idq=50mA
Idd
0 5 10 15 20
Pin(mW)
Pin-Po CHARACTERISTICS
Po
Ta=25°C
f=520MHz
Vdd=12.5V
Idq=50mA
ηd
Idd
0 5 10 15 20
Pin(mW)
120
100
80
60
40
20
0
140
120
100
80
60
40
20
0
ηd(%)
ηd(%)
Vdd-Po CHARACTERISTICS
1.4
Ta=25°C
f=175MHz
1.2
Pin=5mW
Idq=50mA
1
Zg=ZI=50 ohm
0.8
0.6
Po(W)
0.4
0.2
0
4 6 8 10 12 14
Publication Date : Oct．2011
Vdd(V)
Vdd-Po CHARACTERISTICS
280
240
Po
200
160
Idd
120
Idd(mA)
80
40
0
1.6
Ta=25°C
f=520MHz
1.4
1.2
1.0
Pin=15mW
Idq=50mA
Zg=ZI=50 ohm
Po
0.8
Po(W)
0.6
0.4
0.2
0.0
Idd
320
280
240
200
160
120
80
40
0
Idd(mA)
4 6 8 10 12 14
Vdd(V)
3
< Silicon RF Power MOS FET (Discrete) >
3pF
10pF
3pF
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TEST CIRCUIT(f=175MHz)
Vgg
C1
C2
Vdd
10μF、50V
RF-in
4mm
2mm
19.5mm
18pF
180pF
L1：Enameled wire 4Turns、D：0.43mm、2.46mmO.D
L2：LQG11A68N(68 nH、murata)
L3：Enameled wire 9Turns、D：0.43mm、2.46mmO.D
L4：Enameled wire 7Turns、D：0.43mm、2.46mmO.D
C1、C2:1000ｐF、0 .022μF in paralle l
L1
TEST CIRCUIT(f=520MHz)
C1
10.5mm
Vgg
18pF
L2
4.7kOHM
18mm
W
4mm4.5mm
270OHM
240pF
18mm
W
RD00MVS1
5mm
Note:Boad material Glass epoxi sub strate
Micro str ip line width=1m m、50 O HM、er:4.8、t= 0.6mm
4mm
C2
6.5mm
3pF
L4
20.5mm
Vdd
10pF
L3 15mm
250pF
4mm
RF-OUT
RF-in
W
19mm
4.7kOHM
62pF
8.5mm
18pF
Note:Boad material Gl ass epoxy copper-clad laminates FR-4
Micro strip line width=1mm、 50 OHM、e r:4.8、t=0.6m m
4mm
15pF
7.7mm
7.5nH
24pF
3.2mm
13.6nH
RD00MVS1
520MHｚ
2.5mm
C1、C2:1000ｐF、0. 022μF in parallel
W:Line width=1.0mm
0.6mm
10pF 22pF
0.6mm
5pF
8nH
W
19mm
25nH
1.2mm
25.8mm
15mm
RF-OUT
7pF
Publication Date : Oct．2011
4
< Silicon RF Power MOS FET (Discrete) >
RD00HVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=50mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
100
1.004
-35.2
13.480
158.7
0.027
66.7
0.928
-24.7
150
0.987
-51.9
12.911
147.1
0.039
56.1
0.889
-36.5
175
0.972
-59.7
12.500
141.6
0.043
50.7
0.865
-42.0
200
0.957
-67.1
12.035
136.2
0.048
45.6
0.843
-47.2
250
0.929
-80.1
11.030
126.6
0.054
37.5
0.796
-56.4
300
0.898
-91.5
10.055
118.7
0.058
30.2
0.754
-64.4
350
0.875
-101.4
9.157
111.3
0.060
23.7
0.716
-71.5
400
0.857
-110.0
8.322
104.9
0.062
18.2
0.688
-77.6
450
0.844
-117.3
7.642
99.3
0.063
13.3
0.668
-83.4
500
0.831
-124.1
6.991
93.9
0.063
8.5
0.652
-88.7
550
0.824
-130.0
6.432
89.5
0.064
4.8
0.640
-93.3
600
0.815
-135.0
5.963
84.9
0.063
1.1
0.633
-97.9
650
0.810
-139.9
5.480
80.7
0.062
-2.3
0.627
-102.1
700
0.809
-144.1
5.103
77.0
0.061
-5.4
0.626
-105.9
750
0.807
-148.1
4.769
73.1
0.060
-8.6
0.625
-109.6
800
0.806
-151.8
4.420
69.9
0.058
-11.0
0.627
-113.4
850
0.808
-155.1
4.161
66.8
0.056
-13.5
0.630
-116.8
900
0.808
-158.0
3.900
63.1
0.054
-16.2
0.634
-120.0
950
0.810
-161.1
3.639
60.3
0.053
-17.8
0.639
-123.3
1000
0.811
-163.9
3.466
57.7
0.051
-20.0
0.645
-126.4
1050
0.814
-166.5
3.254
54.1
0.048
-22.1
0.654
-129.3
1100
0.817
-168.9
3.045
51.9
0.046
-23.5
0.661
-132.1
RD00HVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
100
1.005
-33.4
13.343
160.0
0.024
68.3
0.898
-22.6
150
0.995
-49.7
12.874
149.0
0.034
57.9
0.865
-33.1
175
0.980
-57.5
12.525
143.6
0.038
53.2
0.845
-38.0
200
0.967
-64.6
12.108
138.3
0.042
47.8
0.826
-42.9
250
0.943
-77.5
11.193
129.0
0.047
39.3
0.781
-51.3
300
0.916
-88.9
10.249
121.2
0.052
32.3
0.743
-58.9
350
0.891
-98.7
9.403
113.9
0.054
26.2
0.709
-65.6
400
0.877
-107.6
8.582
107.3
0.056
20.6
0.681
-71.5
450
0.862
-115.0
7.916
101.9
0.057
15.7
0.661
-77.0
500
0.852
-121.9
7.273
96.4
0.057
11.2
0.644
-82.0
550
0.844
-128.1
6.706
91.9
0.057
7.5
0.633
-86.6
600
0.835
-133.3
6.224
87.3
0.058
3.4
0.625
-91.2
650
0.828
-138.3
5.755
83.0
0.056
0.2
0.619
-95.2
700
0.824
-142.7
5.358
79.3
0.056
-2.5
0.618
-99.0
750
0.823
-146.8
5.024
75.4
0.054
-5.8
0.616
-102.9
800
0.820
-150.6
4.671
72.0
0.053
-8.4
0.615
-106.6
850
0.821
-153.9
4.398
68.9
0.051
-10.5
0.618
-110.1
900
0.822
-157.2
4.134
65.2
0.050
-13.3
0.622
-113.2
950
0.823
-160.2
3.853
62.3
0.048
-15.2
0.628
-116.5
1000
0.822
-163.1
3.677
59.7
0.047
-17.2
0.633
-119.8
1050
0.826
-165.9
3.459
56.3
0.044
-19.5
0.640
-122.9
1100
0.828
-168.4
3.241
53.9
0.042
-20.2
0.646
-125.7
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
S11 S21 S12 S22
S11 S21 S12 S22
Publication Date : Oct．2011
5
< Silicon RF Power MOS FET (Discrete) >
have
until cold after switch
his products without cause damage for human and
details
copies of the formal
(RF power transistors) are designed
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
predicted operating life time of
an authorized Mitsubishi
therefore
device is
It is
sink in conjunction with other cooling methods as needed (fan,
lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
the
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
, please refer the last page
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
for consumer mobile communication terminals and were not specifically designed for use in
under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.
8.
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
6
< Silicon RF Power MOS FET (Discrete) >
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
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contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
7
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