MITSUBISHI RD00HVS1 User Manual
< Silicon RF Power MOS FET (Discrete) >
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
DESCRIPTION
OUTLINE DRAWING
RD00HVS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
FEATURES
High power gain
Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
TYPE NAME
2.5+/-0.1
MIN
0.8
0.4+/-0.07
4.4+/-0.1
1.6+/-0.1
φ0.1
1 2 3
1.5+/-0.1
1.5+/-0.1
0.5+/-0.07
LOT No.
0.4+/-0.07
0.1 MAX
RoHS COMPLIANT
RD00HVS1-101,T113 is a RoHS compliant products.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
1.5+/-0.1
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
0.4
3.9+/-0.3
+0.03
-0.05
ABSOLUTE MAXIMUM RATINGS (Tc=25 deg.C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-10 V
Pch Channel dissipation Tc=25
°C
Pin Input Power Zg=Zl=50
3.1 W
20 mW
ID Drain Current - 200 mA
Tch Channel Temperature - 150
Tstg Storage temperature - -40 to +125
Rth j-c Thermal resistance Junction to case 40
Note: Above parameters are guaranteed independently.
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25deg.C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
MIN TYP MAX.
I
DSS
I
GSS
Zero gate voltage drain current VDS=17V, VGS=0V - - 25 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 2 3 V
Pout Output power 0.5 0.8 - W
Note: Above parameters, ratings, limits and conditions are subject to change.
Drain efficiency
D
VDD=12.5V, Pin=5mW,
f=175MHz,Idq=50mA
LIMITS UNIT
50 60 - %
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
Ciss(pF)
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
4
...
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
3
1.0
0.8
Vgs-Ids CHARACTERISTICS
Ta=+25°C
Vds=10V
On PCB(*1) with Heat-sink
2
1
On PCB(*1)
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
1.5
Ta=+25°C
1
Ids(A)
0.5
0
0 2 4 6 8 10
Vds(V)
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Vgs=4V
Vgs=3V
0.6
Ids(A)
0.4
0.2
0.0
0 1 2 3 4 5
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
20
Ta=+25°C
18
f=1MHz
16
14
12
10
8
6
4
2
0
0 5 10 15 20
Vds(V)
20
18
16
14
12
10
8
Coss(pF)
6
4
2
0
Publication Date : Oct．2011
Vds VS. Cos s CHARACTERISTICS
Ta=+25°C
f=1MHz
0 5 10 15 20
Vds(V)
Vds V S. Crs s CHARACTERISTICS
4
Ta=+25°C
f=1MHz
3
2
Crss (pF)
1
0
0 5 10 15 20
Vds(V)
2
< Silicon RF Power MOS FET (Discrete) >
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
35
30
Gp
Po
25
20
η
Idd(A)
15
10
Po(dBm) , Gp(dB) ,
5
ｄ
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=50mA
0
100
90
80
70
60
50
40
30
d(%)
η
1.2
1.0
0.8
0.6
0.4
Pout(W) , Idd(A)
0.2
0.0
-15 -10 -5 0 5 10 15
Pin(dBm)
Pin-Po CHARACTERISTICS
35
30
25
Gp
Po
20
15
Idd(A)
10
Po(dBm) , Gp(dB) ,
5
Ta=+25°C
f=520MHz
Vdd=12.5V
Idq=50mA
η
ｄ
0
100
90
80
70
60
50
40
30
d(%)
η
1.4
1.2
1.0
0.8
0.6
0.4
Pout(W) , Idd(A)
0.2
0.0
-15 -10 -5 0 5 10 15
Pin(dBm)
Pin-Po CHARACTERISTICS
Po
ηd
Ta=25°C
f=175MHz
Vdd=12.5V
Idq=50mA
Idd
0 5 10 15 20
Pin(mW)
Pin-Po CHARACTERISTICS
Po
Ta=25°C
f=520MHz
Vdd=12.5V
Idq=50mA
ηd
Idd
0 5 10 15 20
Pin(mW)
120
100
80
60
40
20
0
140
120
100
80
60
40
20
0
ηd(%)
ηd(%)
Vdd-Po CHARACTERISTICS
1.4
Ta=25°C
f=175MHz
1.2
Pin=5mW
Idq=50mA
1
Zg=ZI=50 ohm
0.8
0.6
Po(W)
0.4
0.2
0
4 6 8 10 12 14
Publication Date : Oct．2011
Vdd(V)
Vdd-Po CHARACTERISTICS
280
240
Po
200
160
Idd
120
Idd(mA)
80
40
0
1.6
Ta=25°C
f=520MHz
1.4
1.2
1.0
Pin=15mW
Idq=50mA
Zg=ZI=50 ohm
Po
0.8
Po(W)
0.6
0.4
0.2
0.0
Idd
320
280
240
200
160
120
80
40
0
Idd(mA)
4 6 8 10 12 14
Vdd(V)
3
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