< Silicon RF Power MOS FET (Discrete) >
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
DESCRIPTION
RD00HHS1 is a MOS FET type transistor specifically
OUTLINE DRAWING
designed for HF RF amplifiers applications.
TYPE NAME
FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
2.5+/-0.1
0.8 MIN
0.4+/-0.07
APPLICATION
For output stage of high power amplifiers in HF Band
mobile radio sets.
RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
4.4+/-0.1
1.6+/-0.1
1
0.
1 2 3
1.5+/-0.1
1.5+/-0.1
0.5+/-0.07
0.4+/-0.07
0.1 MAX
LOT No.
1.5+/-0.1
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
0.4
3.9+/-0.3
+0.03
-0.05
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
V
DSS
V
GSS
Pch Channel dissipation Tc=25
Pin Input power Zg=Zl=50
ID Drain current - 200
Tch Channel Temperature - 150
Tstg Storage temperature - -40 to +125
Rth j-c Thermal resistance Junction to case 40
Note 1: Above parameters are guaranteed independently.
Drain to source voltage Vgs=0V 30 V
Gate to source voltage Vds=0V
°C
10
3.1 W
10
mW
mA
°C/W
°C
°C
V
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
MIN TYP MAX.
I
DSS
I
GSS
Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 2 3 V
Pout Output power 0.3 0.7 - W
Note : Above parameters , ratings , limits and conditions are subject to change.
Zero gate voltage drain current VDS=17V, VGS=0V - - 25 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
VDD=12.5V, Pin=4mW,
Drain efficiency
D
f=30MHz,Idq=50mA
LIMITS UNIT
55 65 - %
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
Coss(pF)
Crss (pF)
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
4
...
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy( t=0.6 mm)
3
On PCB(*1) with Heat-sink
2
1
On PCB(*1)
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
1.4
Ta=+25°C
1.2
1.0
0.8
Ids(A)
0.6
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Vgs-Ids CHARACTERISTICS
0.6
Ta=+25°C
Vds=10V
0.5
0.4
0.3
Ids(A)
0.2
0.1
0.0
0 1 2 3 4 5
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
20
Ta=+25°C
f=1MHz
15
10
Ciss(pF)
0.4
0.2
0.0
0 2 4 6 8 10
Vds(V)
Vds VS. Cos s CHARACTERISTICS
20
Ta=+25°C
f=1MHz
15
10
5
0
0 5 10 15 20
Vds(V)
Vgs=4V
Vgs=3V
5
0
0 5 10 15 20
Vds(V)
Vds VS. Crss CHARACTERISTICS
4
Ta=+25°C
f=1MHz
3
2
1
0
0 5 10 15 20
Vds(V)
Publication Date : Oct．2011
3
< Silicon RF Power MOS FET (Discrete) >
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
35
30
Gp
100
Po
80
1.2
1.0
0.8
25
60
0.6
Idd(A)
20
Po(dBm) , Gp(dB) ,
15
η
ｄ
Ta=+25°C
f=30MHz
Vdd=12.5V
Idq=50mA
10
40
20
0
ηd(%)
0.4
Pout(W) , Idd(A)
0.2
0.0
-20 -15 -10 -5 0 5 10
Pin(dBm)
Vdd-Po CHARACTERISTICS
1.2
1.0
0.8
Ta=25°C
f=30MHz
Pin=4mW
Icq=50mA
Zg=ZI=50 ohm
Idd
120
80
Pin-Po CHARACTERISTICS
Po
Ta=25°C
f=30MHz
Vdd=12.5V
Idq=50mA
Idd
0 2 4 6 8 10
Pin(mW)
Vgs-Ids CHARACTORISTICS 2
0.6
0.5
Vds=10V
Tc=-25~+75°C
-25°C
0.4
100
90
ηd
80
70
ηd(%)
60
50
40
+25°C
+75°C
0.6
Po(W)
0.4
0.2
0.0
2 4 6 8 10 12 14
Vdd(V)
Vgs-gm CHARACTORISTICS
0.6
0.5
Vds=10V
Tc=-25~+75°C
0.4
0.3
gm(S)
0.2
0.1
0.0
0 1 2 3 4 5
Vgs(V)
Po
-25°C
+75°C
40
0
+25°C
0.3
Idd(mA)
Ids(A)
0.2
0.1
0.0
0 1 2 3 4 5
Vgs(V)
Publication Date : Oct．2011
4
< Silicon RF Power MOS FET (Discrete) >
RD00HHS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
10
1.002
-3.6
12.533
178.3
0.003
90.3
0.920
-2.7301.003
-9.9
12.631
174.6
0.008
82.8
0.919
-6.9501.005
-16.8
12.784
170.6
0.013
79.5
0.918
-11.2
100
1.007
-33.5
12.820
159.1
0.025
67.4
0.898
-22.4
150
0.989
-49.8
12.355
147.5
0.035
56.5
0.866
-32.8
200
0.963
-64.0
11.571
136.8
0.042
47.5
0.824
-42.2
250
0.936
-76.9
10.697
127.3
0.048
38.2
0.781
-50.4
300
0.911
-87.9
9.791
119.1
0.053
30.6
0.745
-57.9
350
0.892
-97.7
8.972
111.4
0.055
24.6
0.711
-64.6
400
0.872
-106.2
8.202
104.9
0.057
18.5
0.685
-70.2
450
0.857
-113.7
7.533
98.9
0.058
13.1
0.665
-75.5
500
0.846
-120.1
6.921
93.4
0.058
8.7
0.649
-80.5
550
0.834
-126.0
6.386
88.4
0.059
4.7
0.640
-85.2
600
0.830
-131.0
5.894
83.7
0.058
0.2
0.630
-89.2
650
0.826
-135.9
5.484
79.3
0.057
-2.8
0.625
-93.3
700
0.821
-140.2
5.097
75.1
0.056
-6.9
0.623
-97.1
750
0.815
-144.0
4.749
71.0
0.055
-9.8
0.623
-100.7
800
0.812
-147.5
4.443
67.3
0.053
-13.0
0.623
-104.3
850
0.814
-151.0
4.167
63.8
0.051
-15.0
0.627
-107.7
900
0.816
-153.9
3.904
60.1
0.049
-17.6
0.630
-110.9
950
0.811
-156.8
3.670
56.8
0.048
-20.8
0.634
-113.9
1000
0.814
-159.5
3.471
53.7
0.046
-22.2
0.640
-117.1
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
TEST CIRCUIT(f=30MHz)
10μF、50V
VddVgg
330μF、50V
18mm
C1
180pF
Pin
3.0mm
470pF
7.0mm
220pF
13.0mm
L1
15pF
L1：LAL04NAR27(0.27μ H)
L2：LAL04NAR39(0.39μ H)
L3：LAL04NAR39(0.39μ H)
L4：LAL04NA1R0(1μH)
C1、C2:100ｐF、0.022μF、0.1μF in parallel
L2
9.0mm 9.0mm 7.0mm
15pF
1k Ω
2.5mm
15Ω 15pF 3pF
7.5mm
RD00HHS1
6.0mm
Note:Boad material Glass epoxi substrate
Micro strip line width=1.0mm、50 OHM、er:4.8、t=0.6mm
4.0mm
C2
L4
8.0mm
22.0mm
14.0mm
L3
470pF
POUT
S22S12S21S11
Publication Date : Oct．2011
5
< Silicon RF Power MOS FET (Discrete) >
have
until cold after switch
his products without cause damage for human and
details
copies of the formal
(RF power transistors) are designed
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
predicted operating life time of
an authorized Mitsubishi
therefore
device is
It is
sink in conjunction with other cooling methods as needed (fan,
lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
the
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
, please refer the last page
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
for consumer mobile communication terminals and were not specifically designed for use in
under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.
8.
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
6
< Silicon RF Power MOS FET (Discrete) >
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
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Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
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•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
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aerospace, nuclear, or undersea repeater use.
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
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•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
7
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