MITSUBISHI RD00HHS1 User Manual
< Silicon RF Power MOS FET (Discrete) >
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
DESCRIPTION
RD00HHS1 is a MOS FET type transistor specifically
OUTLINE DRAWING
designed for HF RF amplifiers applications.
TYPE NAME
FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
2.5+/-0.1
0.8 MIN
0.4+/-0.07
APPLICATION
For output stage of high power amplifiers in HF Band
mobile radio sets.
RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
4.4+/-0.1
1.6+/-0.1
1
0.
1 2 3
1.5+/-0.1
1.5+/-0.1
0.5+/-0.07
0.4+/-0.07
0.1 MAX
LOT No.
1.5+/-0.1
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
0.4
3.9+/-0.3
+0.03
-0.05
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
V
DSS
V
GSS
Pch Channel dissipation Tc=25
Pin Input power Zg=Zl=50
ID Drain current - 200
Tch Channel Temperature - 150
Tstg Storage temperature - -40 to +125
Rth j-c Thermal resistance Junction to case 40
Note 1: Above parameters are guaranteed independently.
Drain to source voltage Vgs=0V 30 V
Gate to source voltage Vds=0V
°C
10
3.1 W
10
mW
mA
°C/W
°C
°C
V
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
MIN TYP MAX.
I
DSS
I
GSS
Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 2 3 V
Pout Output power 0.3 0.7 - W
Note : Above parameters , ratings , limits and conditions are subject to change.
Zero gate voltage drain current VDS=17V, VGS=0V - - 25 uA
Gate to source leak current VGS=10V, VDS=0V - - 1 uA
VDD=12.5V, Pin=4mW,
Drain efficiency
D
f=30MHz,Idq=50mA
LIMITS UNIT
55 65 - %
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
CHANNEL DISSIPATION Pch(W)
Coss(pF)
Crss (pF)
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
4
...
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy( t=0.6 mm)
3
On PCB(*1) with Heat-sink
2
1
On PCB(*1)
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
1.4
Ta=+25°C
1.2
1.0
0.8
Ids(A)
0.6
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Vgs-Ids CHARACTERISTICS
0.6
Ta=+25°C
Vds=10V
0.5
0.4
0.3
Ids(A)
0.2
0.1
0.0
0 1 2 3 4 5
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
20
Ta=+25°C
f=1MHz
15
10
Ciss(pF)
0.4
0.2
0.0
0 2 4 6 8 10
Vds(V)
Vds VS. Cos s CHARACTERISTICS
20
Ta=+25°C
f=1MHz
15
10
5
0
0 5 10 15 20
Vds(V)
Vgs=4V
Vgs=3V
5
0
0 5 10 15 20
Vds(V)
Vds VS. Crss CHARACTERISTICS
4
Ta=+25°C
f=1MHz
3
2
1
0
0 5 10 15 20
Vds(V)
Publication Date : Oct．2011
3
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