MITSUBISHI RA60H4452M1 User Manual
< Silicon RF Power Modules >
BLOCK
DIAGRAM
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA60H4452M1 is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the nominal output signal (P
The output power and the drain current increase as the gate
voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
VGGis 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 5mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input
power.
=60W) attenuates up to 60 dB.
out
1
3
2
4
5
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
out
• Broadband Frequency Range: 440-520MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current IGG=5mA (typ) @ VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
RoHS COMPLIANCE
• RA60H4452M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
out
)
PACKAGE CODE: H2M
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA60H4452M1-101
Antistatic tray,
10 modules/tray
Publication Date :Apr.2011
1
< Silicon RF Power Modules >
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS (T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage VGG<5V, Pin=0W 17 V
DD
Gate Voltage VDD<12.5V, Pin=50mW 6 V
GG
Input Power 100 mW
in
Output Power 80 W
out
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
f=440-520MHz,
VGG<5V
-30 to +100 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
F Frequency Range 440 - 520 MHz
P
Output Power VDD=12.5V 60 - - W
out
Total Efficiency VGG=5V 40 - - %
T
2f
2ndHarmonic Pin=50mW - - -35 dBc
o
Input VSWR - - 3:1 —
in
I
Gate Current VDD=0V, VGG=5V, Pin=0W - 5 6 mA
GG
I
Leakage Current VDD=17V, VGG=0V, Pin=0W - - 1 mA
DD
— Stability
VDD=10.0-15.2V,Pin=25-70mW,
5<P
<65W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW,
— Load VSWR Tolerance
P
=60W (VGGcontrol), Load VSWR=20:1
out
All parameters, conditions, ratings, and limits are subject to change without notice.
No parasitic oscillation —
No degradation or
—
destroy
Publication Date :Apr.2011
2
< Silicon RF Power Modules >
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER,TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
versus FREQUENCY
90
80
(W)
70
out
60
50
h
40
30
TOTAL EFFICIENCY(%)
OUTPUT POWER P
20
10
430 440 450 460 470 480 490 500 510 520 530
INPUT VSWR versus FREQUENCY GATE CURRENT versus FREQUENCY
5
4
(-)
in
r
3
2
INPUT VSWR
1
430 440 450 460 470 480 490 500 510 520 530
T
FREQUENCY f (MHz)
FREQUENCY f (MHz)
=+25°C, ZG=ZL=50, unless otherwise specified)
case
-30
P
out
-40
-50
-60
VDD=12.5V
VGG=5V
Pin=50mW
HARMONICS (dBc)
-70
-80
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f (MHz)
8
VDD=12.5V
VGG=5V
Pin=50mW
7
(mA)
6
GG
5
4
3
2
r
in
GATE CURRENT I
1
0
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f (MHz)
VDD=12.5V
VGG=5V
Pin=50mW
nd
2
rd
3
I
GG
VDD=12.5V
VGG=5V
Pin=50mW
OUTPUT POWER,POWERGAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60
50
(dBm)
out
Gp
40
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
I
DD
0
-10 -5 0 5 10 15 20
INPUTPOWER Pin(dBm)
P
out
f=440MHz,
VDD=12.5V,
VGG=5V
24
20
16
12
8
4
DRAIN CURRENT IDD(A)
0
60
50
Gp
40
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER Pout(dBm)
I
DD
0
-10 -5 0 5 10 15 20
INPUTPOWER Pin(dBm)
P
f=470MHz,
VDD=12.5V,
VGG=5V
OUTPUT POWER,POWERGAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60
50
(dBm)
out
Gp
40
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
I
DD
0
-10 -5 0 5 10 15 20
INPUTPOWER Pin(dBm)
P
out
f=490MHz,
VDD=12.5V,
VGG=5V
24
20
16
12
8
4
DRAIN CURRENT IDD(A)
0
60
50
(dBm)
out
Gp
40
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
I
DD
f=520MHz,
VDD=12.5V,
VGG=5V
0
-10 -5 0 5 10 15 20
INPUTPOWER Pin(dBm)
24
out
20
(A)
DD
I
16
12
8
4
DRAIN CURRENT
0
24
P
out
20
(A)
DD
16
12
8
4
DRAIN CURRENT I
0
Publication Date :Apr.2011
3
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