MITSUBISHI RA 60 H 4452 M 1 Service Manual
www.DataSheet4U.com
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA60H4452M1 is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
drain and the nominal output signal (P
=0V), only a small leakage current flows into the
GG
=60W) attenuates up to
out
60 dB. The output power and the drain current increase as the
gate voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
V
is 4V (typical) and 5V (maximum).
GG
At V
=5V, the typical gate currents are 5mA.This module is
GG
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input
power.
MITSUBISHI RF MOSFET MODULE
RA60H4452M1
BLOCK DIAGRAM
3
2
1
4
5
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
≅0 @ VDD=12.5V, VGG=0V)
DD
• P
>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
out
• Broadband Frequency Range: 440-520MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current I
=5mA (typ) @ VGG=5V
GG
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
RoHS COMPLIANCE
• RA60H4452M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
1 RF Input (Pin)
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Case)
out
GG
DD
)
PACKAGE CODE: H2M
), Power Control
), Battery
ORDERING INFORMATION:
RA60H4452M1
ORDER NUMBER SUPPLY FORM
RA60H4452M1-101
Antistatic tray,
10 modules/tray
MITSUBISHI ELECTRIC
1/9
th
25
Oct 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
MITSUBISHI RF POWER MODULE
RA60H4452M1
MAXIMUM RATINGS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V, Pin=0W 17 V
VGG Gate Voltage VDD<12.5V, Pin=50mW 6 V
Pin Input Power 100 mW
P
Output Power 80 W
out
T
Operation Case Temperature Range
case(OP)
T
Storage Temperature Range -40 to +110 °C
stg
f=440-520MHz,
V
<5V
GG
-30 to +100 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
F Frequency Range 440 520 MHz
P
Output Power VDD=12.5V 60 W
out
ηT
2fo 2nd Harmonic Pin=50mW -35 dBc
ρin
IGG Gate Current VDD=0V, VGG=5V, Pin=0W 5 6 mA
IDD Leakage Current VDD=17V, VGG=0V, Pin=0W 1 mA
—
— Load VSWR Tolerance
Total Efficiency VGG=5V 40 %
Input VSWR 3:1 —
Stability
VDD=10.0-15.2V, Pin=25-70mW,
5<P
<65W (VGG control), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW,
P
=60W (VGG control), Load VSWR=20:1
out
No parasitic oscillation
—
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA60H4452M1
MITSUBISHI ELECTRIC
2/9
th
25
Oct 2006
TYPICAL PERFORMANCE
OUTPUT POWER, TOT AL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
versus FREQUENCY
90
80
(W)
70
out
60
50
40
30
TOTAL EFFICIENCY(%)
OUTPUT POWER P
20
10
430 440 450 460 470 480 490 500 510 520 530
INPUT VSWR versus FREQUENCY GATE CURRENT versus FREQUENCY
5
4
(-)
in
ρ
3
2
INPUT VSWR
1
430 440 450 460 470 480 490 500 510 520 530
OUTPUT POWER, POWER GAIN and OUTPUT PO WER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60
50
(dBm)
out
40
FREQUENCY f(MHz)
FREQUENCY f(M Hz)
Gp
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
P
out
η
T
VDD=12.5V
=5V
V
GG
=50m W
P
in
VDD=12.5V
=5V
V
GG
=50m W
P
in
ρ
in
24
P
out
20
16
(A)
DD
HARMONICS (dBc)
GATE CURERENT (mA)
(dBm)
out
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
-30
-40
-50
-60
-70
-80
430 440 450 460 470 480 490 500 510 520 530
8
7
6
5
4
3
2
1
0
430 440 450 460 470 480 490 500 510 520 530
60
50
Gp
40
RA60H4452M1
VDD=12.5V
=5V
V
GG
=50m W
P
in
nd
2
rd
3
FREQUENCY f(MHz)
Ι
GG
VDD=12.5V
=5V
V
GG
=50m W
P
in
FREQUENCY f(M Hz)
P
out
24
20
16
(A)
DD
I
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
OUTPUT POWER, POWER GAIN and OUTPUT PO WER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60
50
(dBm)
out
40
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
RA60H4452M1
I
DD
0
f=440M Hz,
=12.5V,
V
DD
=5V
V
GG
-10-5 0 5 101520
INP U T P O W ER P
Gp
I
DD
0
(dBm)
in
P
out
f=490M Hz,
=12.5V,
V
DD
V
=5V
GG
-10-5 0 5 101520
INP U T P O W ER P
(dBm)
in
MITSUBISHI ELECTRIC
12
8
4
DRAIN CURRENT I
0
24
20
(A)
DD
16
12
8
DRAIN CURRENT I
4
0
3/9
30
POWER GAIN Gp(dB)
OUTPUT POWER P
20
10
0
I
DD
f=470M Hz,
V
DD
V
GG
-10-5 0 5 101520
INPUT POWER P
(dBm)
in
60
P
50
(dBm)
out
40
Gp
out
30
POWER GAIN Gp(dB)
OUTPUT POWER P
20
10
0
I
DD
f=520M Hz,
V
DD
V
GG
-10-5 0 5 101520
INPUT POWER P
(dBm)
in
=12.5V,
=5V
=12.5V,
=5V
12
8
4
0
24
20
16
12
8
4
0
th
25
Oct 2006
DRAIN CURRENT
(A)
DD
DRAIN CURRENT I
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