Mitsubishi Electric PSS-S72FT User Manual

<Dual-In-Line Package Intelligent Power Module>

1200V Mini DIPIPM with BSD Series APPLICATION NOTE

PSS**S72FT

Table of contents

CHAPTER 1 INTRODUCTION .................................................................................................................................2

1.1 Features of 1200V Mini DIPIPM with BSD ............................................................................................................. 2

1.2 Functions ............................................................................................................................................................... 3

1.3 Target Applications ................................................................................................................................................. 4

1.4 Product Line-up ...................................................................................................................................................... 4

CHAPTER 2 SPECIFICATIONS AND CHARACTERISTICS ....................................................................................5

2.1 1200V Mini DIPIPM with BSD Specifications ......................................................................................................... 5

2.1.1 Maximum Ratings .............................................................................................................................................................................................. 5

2.1.2 Thermal Resistance ........................................................................................................................................................................................... 7

2.1.3 Electric Characteristics and Recommended Conditions ..................................................................................................................................... 8

2.1.4 Mechanical Characteristics and Ratings .......................................................................................................................................................... 10

2.2 Protective Functions and Operating Sequence ..................................................................................................... 11

2.2.1 Short Circuit Protection .................................................................................................................................................................................... 11

2.2.2 Control Supply UV Protection .......................................................................................................................................................................... 13

2.2.3 Temperature output function VOT ...................................................................................................................................................................... 15

2.3 Package Outlines ................................................................................................................................................. 20

2.3.1 Package outlines.............................................................................................................................................................................................. 20

2.3.2 Marking ............................................................................................................................................................................................................ 21

The Lot number indicates production year, month, running number and country of origin. ........................................................................................ 21

2.3.3 Terminal Description ........................................................................................................................................................................................ 22

2.4 Mounting Method ................................................................................................................................................. 24

2.4.1 Electric Spacing ............................................................................................................................................................................................... 24

2.4.2 Mounting Method and Precautions ................................................................................................................................................................... 24

2.4.3 Soldering Conditions ........................................................................................................................................................................................ 25

CHAPTER 3 SYSTEM APPLICATION GUIDANCE ................................................................................................27

3.1 Application Guidance ........................................................................................................................................... 27

3.1.1 System connection ........................................................................................................................................................................................... 27

3.1.2 Interface Circuit (Direct Coupling Interface example for using one shunt resistor) ........................................................................................... 28

3.1.3 Interface Circuit (Example of Opto-coupler Isolated Interface) ......................................................................................................................... 29

3.1.4 External SC Protection Circuit with Using Three Shunt Resistors .................................................................................................................... 30

3.1.5 Circuits of Signal Input Terminals and Fo Terminal ........................................................................................................................................... 30

3.1.6 Snubber Circuit ................................................................................................................................................................................................ 32

3.1.7 Recommended Wiring Method around Shunt Resistor..................................................................................................................................... 33

3.1.8 Precaution for Wiring on PCB .......................................................................................................................................................................... 35

3.1.9 Parallel operation of DIPIPM ............................................................................................................................................................................ 36

3.1.10 SOA of Mini DIPIPM ....................................................................................................................................................................................... 36

3.1.11 SCSOA .......................................................................................................................................................................................................... 37

3.1.12 Power Life Cycles .......................................................................................................................................................................................... 38

3.2 Power Loss and Thermal Dissipation Calculation ................................................................................................ 39

3.2.1 Power Loss Calculation ................................................................................................................................................................................... 39

3.2.2 Temperature Rise Considerations and Calculation Example ............................................................................................................................ 41

3.3.1 Evaluation Circuit of Noise Withstand Capability .............................................................................................................................................. 42

3.3.2 Countermeasures and Precautions .................................................................................................................................................................. 42

3.3.3 Static Electricity Withstand Capability ............................................................................................................................................................... 43

CHAPTER 4 Bootstrap Circuit Operation................................................................................................................44

4.1 Bootstrap Circuit Operation .................................................................................................................................. 44

4.2 Bootstrap Supply Circuit Current at Switching State ............................................................................................ 45

4.3 Note for designing the bootstrap circuit ................................................................................................................ 46

4.4 Initial charging in bootstrap circuit ........................................................................................................................ 47

CHAPTER 5 PACKAGE HANDLING ......................................................................................................................48

5.1 Packaging Specification ....................................................................................................................................... 48

5.2 Handling Precautions ........................................................................................................................................... 49

Publication Date: September 2015

<Dual-In-Line Package Intelligent Power Module>

1200V Mini DIPIPM with BSD Series APPLICATION NOTE CHAPTER 1 INTRODUCTION

1.1 Features of 1200V Mini DIPIPM with BSD

Mini DIPIPM with BSD is an ultra-small compact intelligent power module with transfer mold package favorable for larger mass production. Power chips, drive and protection circuits are integrated in the module, which make it easy for AC400-440V class low power motor inverter control. It includes many improvements (loss performance, built-in peripheral functions and line-up expansion). Main features of this series are as below.

・Newly developed 6th generation CSTBT are integrated for improving efficiency ・Incorporating bootstrap diode(BSD) with current limiting resistor for P-side gate driving supply ・Newly integrated temperature of control IC part output function ・Same package with Mini DIPIPM with BSD Series.

About detailed differences, please refer Section 1.5. Fig.1-1-1 and Fig.1-1-2 show the outline and internal

cross-section structure respectively.

Fig.1-1-1 Package image

Cu frame

Molding resin

Al wire

FWDi

Insulation sheet (copper foil+ resin)

IGBT

Au wire

BSD

Fig.1-1-2 Internal cross-section structure

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE

1.2 Functions

1200V Mini DIPIPM has following functions and inner block diagram is described in Fig.1-2-1.

● For P-side IGBTs:

- Drive circuit;

- High voltage level shift circuit;

- Control supply under voltage (UV) lockout circuit (without fault signal output).

- Built-in bootstrap diode (BSD) with current limiting resistor

● For N-side IGBTs:

-Drive circuit;

-Short circuit (SC) protection circuit (by inserting external shunt resistor into main current path)

-Control supply under voltage (UV) lockout circuit (with fault signal output)

-Outputting LVIC temperature by analog signal (No self over temperature protection)

● Fault Signal Output

-Corresponding to N-side IGBT SC and N-side UV protection.

● IGBT Drive Supply

-Single DC15V power supply (in the case of using bootstrap method)

● Control Input Interface

-Schmitt-triggered 5V input compatible, high active logic.

● UL recognized : UL1557 File E80276

Bootstrap Diode with current limiting resistor

Temperature output

VP1

UFB

UFS

VFB

VFS

WFB

WFS

CFo

VOT

CIN

HVIC1

HVIC2

HVIC3

LVI C

OUT

Fig.1-2-1 Inner block diagram

IGBT1

IGBT2

IGBT3

IGBT4

IGBT5

IGBT6

DIPIPM

Di1

Di2

Di3

Di4

Di5

Di6

6th generation Full gate CSTBT

Open emitter only

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE

1.3 Target Applications

Motor drives for low power industrial equipments and household equipment such as air conditioners and so on.

(Except for vehicle application)

1.4 Product Line-up

Table 1-4-1 1200V Mini DIPIPM Line-up (Mini DIP with BSD series package)

Type Name

PSS05S72FT 5A/1200V 0.75kW/440V PSS10S72FT 10A/1200V 1.5kW/440V

Note 1: The motor ratings are calculation results. It will depend on the operation conditions.

(Note 1)

IGBT Rating Motor Rating

(Note 1)

Isolation Voltage

= 2500Vrms

iso

(Sine 60Hz, 1min

All shorted pins-heat sink)

Publication Date: September 2015

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE

CHAPTER 2 SPECIFICATIONS AND CHARACTERISTICS

2.1 1200V Mini DIPIPM with BSD Specifications

1200V Mini DIPIPM specifications are described below by using PSS10S72FT (10A/1200V) as an example.

Please refer to respective datasheet for the detailed description of other types.

2.1.1 Maximum Ratings

The maximum ratings of PSS10S72FT are shown in Table 2-1-1.

Table 2-1-1 Maximum Ratings

INVERTER PART

Symbol Parameter Condition Ratings Unit

CC(surge)

CES

±IC Each IGBT collector current

±ICP Each IGBT collector current (peak) TC= 25°C, less than 1ms 20 A

Tj Junction temperature -30~+150

Note: Pulse width and period are limited due to junction temperature.

CONTROL (PROTECTION) PART

Symbol Parameter Condition Ratings Unit

VD Control supply voltage Applied between VP1-VNC, VN1-VNC 20 V

VDB Control supply voltage Applied between V

VIN Input voltage Applied between UP, VP, WP-VNC, UN, VN, WN-VNC -0.5~VD+0.5 V

VFO Fault output supply voltage Applied between FO-VNC -0.5~VD+0.5 V

IFO Fault output current Sink current at FO terminal 1 mA

VSC Current sensing input voltage Applied between CIN-VNC -0.5~VD+0.5 V

TOTAL SYSTEM

Symbol Parameter Condition Ratings Unit

CC(PROT)

TC Module case operation temperature Measurement point of Tc is described below -30~+100 °C

Storage temperature -40~+125 °C

stg

Isolation voltage

iso

Supply voltage Applied between P-NU,NV,NW 900

Supply voltage (surge) Applied between P-NU,NV,NW 1000

Collector-emitter voltage 1200

800

2500 V

Self protection supply voltage limit (Short circuit protection capability)

TC= 25°C (Note)

, V

UFB-VUFS

= 13.5~16.5V, Inverter Part

= 125°C, non-repetitive, less than 2μs

60Hz, Sinusoidal, AC 1min, between connected all pins and heat sink plate

VFB-VVFS

WFB-VWFS

20 V

Tc measurement position

Control terminals

18mm

IGBT chip position

FWDi chip position

(1) Vcc The maximum voltage can be biased between P-N. A voltage suppressing circuit such as a brake circuit is

necessary if P-N voltage exceeds this value.

(2) Vcc(surge) The maximum P-N surge voltage in switching state. If P-N voltage exceeds this voltage, a snubber circuit is

necessary to absorb the surge under this voltage. (3) V (4) +/-I

The maximum sustained collector-emitter voltage of built-in IGBT and FWDi.

CES

The allowable continuous current flowing at collect electrode (Tc=25°C) Pulse width and period are limited due to

junction temperature. (5) Tj The maximum junction temperature rating is 150°C.But for safe operation, it is recommended to limit the average

junction temperature up to 125°C. Repetitive temperature variation ∆Tj affects the life time of power cycle, so refer

life time curves for safety design. (6) Vcc(prot) The maximum supply voltage for turning off IGBT safely in the case of an SC or OC faults. The power chip might not

be protected and break down in the case that the supply voltage is higher than this specification.

18mm

Power terminals

Groove

Tc point

Heat sink side

°C

(1) (2) (3) (4)

(5)

rms

(6)

(7)

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE

(7) Tc position Tc (case temperature) is defined to be the temperature just beneath the specified power chip. Please mount a

thermocouple on the heat sink surface at the defined position to get accurate temperature information. Due to the

control schemes such different control between P and N-side, there is the possibility that highest Tc point is different

from above point. In such cases, it is necessary to change the measuring point to that under the highest power chip.

[Power chip position] Fig.2-1-1 indicate the position of the each power chips. (This figure is the view from laser marked side.)

Dimension in mm

IGBT FWDi

WN VN UN WP VP UP

Fig.2-1-1 Power chip position

Publication Date: September 2015

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE

2.1.2 Thermal Resistance

Table 2-1-2 shows the thermal resistance of PSS10S72FT.

Table 2-1-2 Thermal resistance of PSS10S72FT

THERMAL RESISTANCE

Symbol Parameter Condition

th(j-c)Q

th(j-c)F

Note : Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of

Junction to case thermal resistance (Note)

Inverter FWDi part (per 1/6 module) - - 1.8 K/W

DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k).

Inverter IGBT part (per 1/6 module) - - 1.5 K/W

The above data shows the thermal resistance between chip junction and case at steady state. The thermal resistance goes into saturation in about 10 seconds. The unsaturated thermal resistance is called as transient thermal impedance which is shown in Fig.2-1-3. Zth(j-c)* is the normalized value of the transient thermal impedance. (Zth(j-c)*= Zth(j-c) / Rth(j-c)max)

For example, the IGBT transient thermal impedance of PSS10S72FT in 0.2s is 1.61×0.8=1.288

The transient thermal impedance isn’t used for constantly current, but for short period current (ms order). (e.g. in the cases at motor starting, at motor lock･･･)

Limits

Min. Typ. Max.

K/W.

Unit

1.0

FWDi

IGBT

0.1

Normalized thermal impedance Zth(j-c)

0.01 0.1 1 10

Time(s)

Fig.2-1-3 Typical transient thermal impedance (PSSxxS72FT)

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE

2.1.3 Electric Characteristics and Recommended Conditions

Table 2-1-3 shows the typical static characteristics and switching characteristics of PSS10S72FT.

Table 2-1-3 Static characteristics and switching characteristics of PSS10S72FT.

INVERTER PART (T

Symbol Parameter Condition

CE(sat)

Collector-emitter saturation voltage

VEC FWDi forward voltage VIN= 0V, -IC= 10A - 1.90 2.40 V

ton

- 0.45 0.90 μs

C(on)

- 2.40 3.40 μs

off

C(off)

Switching times

- 0.40 0.80 μs

trr - 0.50 - μs

CES

Collector-emitter cut-off current

Switching time definition and performance test method are shown in Fig.2-1-4 and 2-1-5.

Switching characteristics are measured by half bridge circuit with inductance load.

90%

10% 10% 10% 10%

tc(on)

CIN

td(on)

( ton=td(on)+tr ) ( toff=td(off)+tf )

Fig.2-1-4 Switching time definition Fig.2-1-5 Evaluation circuit (inductive load)

Short A for N-side IGBT, and short B for P-side IGBT evaluation

Turn on

= 25°C, unless otherwise noted)

trr

Irr

tc(off)

td(off) tf

= 15V, VIN= 5V, IC= 10A

D=VDB

= 600V, VD= VDB= 15V

= 10A, Tj= 125°C, VIN= 0↔5V

Inductive Load (upper-lower arm)

CE=VCES

90%

P-side SW Input signal

VIN(5V0V)

N-side SW Input signal

t:200ns/div

Min. Typ. Max.

= 25°C - 1.50 2.20

Tj= 125°C - 1.75 2.50

1.10 1.80 2.50 μs

= 25°C - - 1

Tj= 125°C - - 10

UFB,VVFB,VWFB

UP,VP,W

UN,VN,W

COM

GND CIN

CIN

U,V,W

NU,NV, NW

Turn off

Limits

VDB

UFS,VVFS,VWFS

L load

N-side

P-side

L load

t:200ns/div

Unit

Conditions: VCC=600V, VD=VDB=15V, Tj=125°C, Ic=10A, Inductive load half-bridge circuit

Publication Date: September 2015

Ic(5A/div)

VCE(200V/div)

PSS10S72FT (10A/1200V)

Fig.2-1-6 Typical switching waveform

(200V/div)

Ic(5A/div)

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)



1200V Mini DIPIPM with BSD Series APPLICATION NOTE

Table 2-1-4 shows the typical control part characteristics of PSS20S71F6.

Table 2-1-4 Control (Protection) characteristics of PSS20S71F6

CONTROL (PROTECTION) PART (T

Symbol Parameter Condition

Circuit current

IDB

Short circuit trip level VD = 15V

SC(ref)

DBt

P-side Control supply

UVDt

UVDr Reset level 10.8 - 13.0 V

under-voltage protection(UV)

Reset level 10.5 - 12.5 V

DBr

N-side Control supply under-voltage protection(UV)

VOT Temperature output Pull down R=5kΩ (Note 2)

FOH

FOL

Fault output voltage

tFO Fault output pulse width CFO=22nF

IIN Input current VIN = 5V 0.70 1.00 1.50 mA

ON threshold voltage

th(on)

OFF threshold voltage 0.8 - -

th(off

VF Bootstrap Di forward voltage R

Note 1 : SC protection works only for N-side IGBT. Please select the external shunt resistance such that the SC trip-level is less than 2 times of the current rating.

Note 2 : DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that

Built-in limiting resistance

user defined, controller (MCU) should stop the DIPIPM.

3 : Fault signal Fo outputs when SC or UV protection works. Fo pulse width is different for each protection modes. At SC failure, Fo pulse width is a fixed width

which is specified by the capacitor connected to C state. (But minimum Fo pulse width is the specified time by C

Recommended operating conditions of PSS10S72FT are given in Table 2-1-5. It is highly recommended to operate the modules within these conditions so as to ensure DIPIPM safe operation.

Table 2-1-5 Recommended operating conditions of PSS10S72FT

RECOMMENDED OPERATION CONDITIONS

Symbol Parameter Condition

VCC Supply voltage Applied between P-NU, NV, NW

VD Control supply voltage Applied between VP1-VNC, VN1-VNC

VDB Control supply voltage Applied between V

∆VD, ∆VDB Control supply variation

Arm shoot-through blocking time For each input signal

dead

PWM input frequency TC ≤ 100°C, Tj ≤ 125°C

PWM

IO Allowable r.m.s. current

PWIN(on)

PWIN(off)

VNC V

Tj Junction temperature

Note 1: Allowable r.m.s. current depends on the actual application conditions.

2: DIPIPM might not make response if the input signal pulse width is less than PWIN(on) 3: IPM might make delayed response or no response for the input signal with off pulse width less than PWIN(off). Please refer below about delayed response.

Delayed Response Against Shorter Input Off Signal Than PWIN(off) (P-side only)

Minimum input pulse width

variation Between VNC-NU, NV, NW (including surge)

= 25°C, unless otherwise noted)

Tota l o f VP1-VNC, VN1-VNC

Each part of V

- V

VFB

VFS

, V

WFB

UFB

- V

WFS

UFS

Limits

Min. Typ. Max.

=15V, VIN=0V - - 6.00

VD=15V, VIN=5V - - 6.00

=15V, VIN=0V - - 0.55

D=VDB

VD=VDB=15V, VIN=5V - - 0.55

(Note 1)

0.45 0.48 0.51 V

Unit

Trip level 10.0 - 12.0 V

≤125°C

Trip level 10.3 - 12.5 V

LVIC Temperature=85C

2.51 2.64 2.76 V

VSC = 0V, FO terminal pulled up to 5V by 10kΩ 4.9 - - V

= 1V, IFO = 1mA - - 0.95 V

Applied between U

IF=10mA including voltage drop by limiting resistor

, VP, WP, UN, VN, WN-VNC

(Note 3)

1.6 2.4 - ms

- - 3.5

0.5 0.9 1.3 V

Included in bootstrap Di 16 20 24 Ω

terminal. (C

=9.1 x 10-6 x tFO [F]), but at UV failure, Fo outputs continuously until recovering from UV

, V

UFB-VUFS

= 600V, VD = 15V, P.F = 0.8,

Sinusoidal PWM

≤ 100°C, Tj ≤ 125°C (Note1)

200V

13.5VV

13.0VV

-20CTc 100C, N-line wiring inductance less than 10nH

350V,

16.5V,

18.5V,

Below rated current

Between rated current and 1.7 times of rated current

（Note 3）

VFB-VVFS

, V

WFB-VWFS

PWM

= 5kHz

= 15kHz

(Note 2)

Limits

Min. Typ. Max.

350 600 800

13.5 15.0 16.5

13.0 15.0 18.5

-1 - +1

3.0 - -

- - 20

- - 5.3

- - 3.6

2.0 - -

2.5 - -

2.9 - -

-5.0 - +5.0

-20 - +125

Unit

V/μs

μs

kHz

Arms

μs

°C

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE

P Side Control Input

Internal IGBT Gate

Output Current Ic

Real line: off pulse width > PWIN(off); turn on time t1 Broken line: off pulse width < PWIN(off); turn on time t2 (t1:Normal switching time)

About Control supply variation If high frequency noise superimposed to the control supply line, IC malfunction might happen and cause DIPIPM erroneous operation. To avoid such problem, line ripple voltage should meet the following specifications:

dV/dt  +/-1V/μs, Vripple2Vp-p

2.1.4 Mechanical Characteristics and Ratings

The mechanical characteristics and ratings are shown in Table 2-1-6. Please refer to Section 2.4 for the detailed mounting instruction of Mini DIPIPM.

Table 2-1-6 Mechanical characteristics and ratings of PSS10S72FT

MECHANICAL CHARACTERISTICS AND RATINGS

Parameter Condition

Mounting torque Mounting screw : M3 (Note 1) Recommended 0.78 N·m 0.59 - 0.98 N·m

Terminal pulling strength Load 9.8N EIAJ-ED-4701 10 - - s

Terminal bending strength

Weight - 21 - g

Heat-sink flatness

Note 1: Plain washers (ISO 7089~7094) are recommended. Note 2: Measurement point of heat sink flatness

Load 4.9N 90deg. bend

Measurement position

Heat sink side

Limits

Min. Typ. Max.

EIAJ-ED-4701 2 - - times

(Note 2)

-50 - 100 μm

12.78mm

4.65mm

13.5mm

23mm

Heat sink side

Unit

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE

2.2 Protective Functions and Operating Sequence

Mini DIPIPM has Short circuit (SC), Under Voltage of control supply (UV) and temperature output (VOT) for

protection function. The operating principle and sequence are described below.

2.2.1 Short Circuit Protection

1. General Mini DIPIPM uses external shunt resistor for the current detection as shown in Fig.2-2-1. The internal

protection circuit inside the IC captures the excessive large current by comparing the CIN voltage generated at the shunt resistor with the referenced SC trip voltage, and perform protection automatically. The threshold voltage trip level of the SC protection Vsc(ref) is typ. 0.48V.

In case of SC protection happens, all the gates of N-side three phase IGBTs will be interrupted together with

a fault signal output. To prevent DIPIPM erroneous protection due to normal switching noise and/or recovery current, it is necessary to set an RC filter (time constant: 1.5μ ~ 2μs) to the CIN terminal input (Fig.2-2-1, 2-2-2). Also, please make the pattern wiring around the shunt resistor as short as possible.

SC protection external

Shunt resistor

P-side IGBTs

N-side IGBTs

NU NV

CIN

Fig.2-2-1 SC protecting circuit Fig.2-2-2 Filter time constant setting

Drive Circuit

U V

Drive Circuit

SC Protection

SC protective level

Collect current Ic

Collector current

Input pulse width tw (μs)

2. SC protection Sequence

SC protection (N-side only with the external shunt resistor and RC filter)

a1. Normal operation: IGBT ON and carrying current.

a2. Short circuit current detection (SC trigger).

It is necessary to set RC time constant so that IGBT shut down within 2.0μs when SC. (1.5~2.0μs is recommended generally.)

a3. All N-side IGBTs’ gate are hard interrupted. a4. All N-side IGBTs turn OFF. a5. Fo outputs.

The pulse width of the Fo signal is set by the external capacitor CFO.

a6. Input = “L”. IGBT OFF

a7. Fo finishes output, but IGBTs don't turn on until inputting next ON signal (LH).

IGBT of each phase can return to normal state by inputting ON signal to each phase.

a8. Normal operation: IGBT ON and outputs current.

Lower-side control input

Protection circuit state

Internal IGBT gate

Output current Ic

Sense voltage of the shunt resistor

Error output Fo

SC trip current level

SET

SC reference voltage

Delay by RC filtering

Fig.2-2-3 SC protection timing chart

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE

3. Determination of Shunt Resistance

(1) Shunt resistance

The value of current sensing resistance is calculated by the following formula:

= V

Shunt

where V

is the SC trip voltage.

SC(ref)

The maximum SC trip level SC(max) should be set less than the IGBT minimum saturation current which is

1.7 times as large as the rated current. For example, the SC(max) of PSS10S72FT should be set to 10x1.7=17A. The parameters (V

SC(ref)

level.

For example of PSS10S72FT, there is +/-0.03V dispersion in the spec of V

Table 2-2-1 Specification for V

SC(ref)

Condition Min Typ Max

at Tj=25°C, VD=15V

Then, the range of SC trip level can be calculated by the following expressions:

Shunt(min)=VSC(ref) max

Shunt(typ)

Shunt(max)

So the SC trip level range is described as Table 2-2-2.

*)This is the case that shunt resistance dispersion is within +/-5%.

= R

Shunt(min)

Shunt(typ)

Table 2-2-2 Operative SC Range (R

Condition min. typ. Max.

at Tj=25°C, V

(e.g. 30mΩ (R

=15V

shunt(min)

)= 0.51V (=V

There is the possibility that the actual SC protection level becomes less than the calculated value. This is considered due to the resonant signals caused mainly by parasitic inductance and parasitic capacity. It is recommended to make a confirmation of the resistance by prototype experiment.

(2) RC Filter Time Constant

It is necessary to set an RC filter in the SC sensing circuit in order to prevent malfunction of SC protection due to noise interference. The RC time constant is determined depending on the applying time of noise interference and the SCSOA of the DIPIPM.

When the voltage drop on the external shunt resistor exceeds the SC trip level, The time (t1) that the CIN terminal voltage rises to the referenced SC trip level can be calculated by the following expression:

IRV





cshuntSC



Vsc : the CIN terminal input voltage, Ic : the peak current, τ : the RC time constant





On the other hand, the typical time delay t2 (from Vsc voltage reaches Vsc(ref) to IGBT gate shutdown) of

IC is shown in Table 2-2-3.

Table 2-2-3 Internal time delay of IC

Item Min typ max Unit

IC transfer delay time -

Therefore, the total delay time from an SC level current happened to the IGBT gate shutdown becomes:

=t1+t2

TOTAL

/SC

SC(ref)

, R

) dispersion should be considered when designing the SC trip

Shunt

as shown in Table 2-2-1.

SC(ref)

(unit: V)

0.45 0.48 0.51

/SC(max) / 0.95* then SC(typ) = V

x 1.05* then SC(min)= V

=30mΩ (min), 31.6mΩ (typ), 33.2mΩ(max)

Shunt

SC(ref) typ

SC(ref) min

/ R

Shunt(typ)

Shunt(max)

13.5A 15.2A 17A

) / 17A(=SC(max))

SC(max)





)1(

)1ln(1

cshunt

- 1.0

μs

Publication Date: September 2015

<Dual-In-Line Package Intelligent Power Module>

1200V Mini DIPIPM with BSD Series APPLICATION NOTE

DBt

(P)

In this voltage range, built-in control IC may not work properly. Normal operating of each protection function (UV, Fo output etc.) is

not also assured. Normally IGBT does not work. But external noise may cause DIPIPM malfunction (turns ON), so DC-link voltage need to start up after control supply starts-up. UV function becomes active and output Fo (N-side only). Even if control signals are applied, IGBT does not work IGBT can work. However, conducting loss and switching loss will increase, and result extra temperature rise at this state,.

Recommended conditions.

IGBT works. However, switching speed becomes fast and saturation current becomes large at this state, increasing SC broken risk. The control circuit might be destroyed.

 +/-1V/μs, Vripple2Vp-p

dV/dt

2.2.2 Control Supply UV Protection

The UV protection is designed to prevent unexpected operating behavior as described in Table 2-2-4. Both P-side and N-side have UV protecting function. However, fault signal (Fo) output only corresponds to

N-side UV protection. Fo output continuously during UV state.

In addition, there is a noise filter (typ. 10μs) integrated in the UV protection circuit to prevent instantaneous

UV erroneous trip. Therefore, the control signals are still transferred in the initial 10μs after UV happened.

Table 2-2-4 DIPIPM operating behavior versus control supply voltage

Control supply voltage Operating behavior

0-4.0V (P, N)

4.0-UVDt (N), UV

UVDt (N)-13.5V

(P)-13.0V

DBt

13.5-16.5V (N)

-18.5V (P)

13.0

16.5-20.0V (N)

-20.0V (P)

18.5

20.0V- (P, N)

Ripple Voltage Limitation of Control Supply

If high frequency noise superimposed to the control supply line, IC malfunction might happen and cause DIPIPM erroneous operation. To avoid such problem happens, line ripple voltage should meet the following specifications:

Publication Date: September 2015

<Dual-In-Line Package Intelligent Power Module>

1200V Mini DIPIPM with BSD Series APPLICATION NOTE

[N-side UV Protection Sequence]

a1. Control supply voltage V

ON signal (LH).

(IGBT of each phase can return to normal state by inputting ON signal to each phase.)

a2. Normal operation: IGBT ON and carrying current. a3. V

level dips to under voltage trip level. (UVDt).

a4. All N-side IGBTs turn OFF in spite of control input condition. a5. Fo outputs for the period set by the capacitance C a6. V

level reaches UVDr.

a7. Normal operation: IGBT ON and outputs current.

Control input

Protection circuit state

Control supply voltage V

Output current Ic

Error output Fo

[P-side UV Protection Sequence]

a1. Control supply voltage V

IGBT turns on by next ON signal (LH). a2. Normal operation: IGBT ON and outputs current. a3. V

level drops to under voltage trip level (UV

a4. IGBT of the corresponding phase only turns OFF in spite of control input signal level,

but there is no F a5. V

level reaches UV

signal output.

a6. Normal operation: IGBT ON and outputs current.

Control input

Protection circuit state

Control supply voltage V

Output current Ic

Error output Fo

exceeds under voltage reset level (UVDr), but IGBT turns ON by next

but output is extended during VD keeps below UVDr.

FO,

RESET

SET

RESET

UVDr

Fig.2-2-4 Timing chart of N-side UV protection

rises. After the voltage reaches under voltage reset level UV

DBt

DBr

RESET SET

DBr

DBt

Keep High-level (no fault output)

RESET

Fig.2-2-5 Timing Chart of P-side UV protection

DBr

Publication Date: September 2015

<Dual-In-Line Package Intelligent Power Module>

1200V Mini DIPIPM with BSD Series APPLICATION NOTE

2.2.3 Temperature output function V

(1) Usage of this function

This function measures the temperature of control LVIC by built in temperature sensor on LVIC. The heat generated at IGBT and FWDi transfers to LVIC through molding resin of package and outer heat sink. So LVIC temperature cannot respond to rapid temperature rise of those power chips effectively. (e.g. motor lock, short circuit) It is recommended to use this function for protecting from slow excessive temperature rise by such cooling system down and continuance of overload operation. （Replacement from the thermistor

which was mounted on outer heat sink currently）

[Note]

In this function, DIPIPM cannot shutdown IGBT and output fault signal by itself when temperature rises

excessively. When temperature exceeds the defined protection level, controller (MCU) should stop the DIPIPM.

←LVIC

(Detecting point)

Power Chip Area

Fig.2-2-6 Temperature detecting point Fig.2-2-7 Thermal conducting from power chips

(2) VOT characteristics

output circuit, which is described in Fig.2-2-9, is the output of OP amplifier circuit. The current capability

output is described as Table 2-2-6. The characteristics of VOT output vs. LVIC temperature is linear

of V

characteristics described in Fig.2-2-13. There are some cautions for using this function as below.

Table 2-2-6 Output capability

(Tc=-20°C ~100°C)

min.

Source 1.7mA

Sink 0.1mA

Source: Current flow from V

Sink : Current flow from outside to V

 In the case of detecting lower temperature than room temperature

It is recommended to insert 5.1kΩ pull down resistor for getting linear output characteristics at lower temperature than room temperature. When the pull down resistor is inserted between V GND), the extra current calculated by V continuously. In the case of only using V necessary to insert the pull down resistor.

Temperature

nal

Fig.2-2-9 VOT output circuit in the case of detecting low temperature

to outside.

FWDi

IGBT

LVI C

Heatsink

Temperature of LIVC is affected from heatsink.

Inside LVIC of DIPIPM

Temperature

nal

Ref

VNC

Fig.2-2-8 VOT output circuit

and VNC(control

output voltage / pull down resistance flows as LVIC circuit current

for detecting higher temperature than room temperature, it isn't

Inside LVIC of DIPIPM

Ref

VNC

MCU

5.1kΩ

MCU

Publication Date: September 2015

<Dual-In-Line Package Intelligent Power Module>

1200V Mini DIPIPM with BSD Series APPLICATION NOTE

 In the case of using with low voltage controller(MCU)

In the case of using V voltage 3.3V when temperature rises excessively. If system uses low voltage controller, it is recommended to insert a clamp Di between control supply of the controller and this output for preventing over voltage.

Fig.2-2-10 VOT output circuit in the case of using with low voltage controller

 In the case that the protection level exceeds control supply of the controller

In the case of using low voltage controller like 3.3V MCU, if it is necessary to set the trip V supply voltage (e.g. 3.3V) or more, there is the method of dividing the V circuit and then inputting to A/D converter on MCU (Fig.2-2-11). In that case, sum of the resistances of divider circuit should be almost 5.1kΩ. About the necessity of clamp diode, we consider that the divided output will not exceed the supply voltage of controller generally, so it will be unnecessary to insert the clump diode. But it should be judged by the divided output level finally.

Temperature

nal

with low voltage controller (e.g. 3.3V MCU), VOT output might exceed control supply

Inside LVIC of DIPIPM

Temperature signal

Ref

VNC

MCU

level to control

output by resistance voltage divider

Inside LVIC of DIPIPM

Ref

Fig.2-2-11 V

VOT

VNC

DVOT=V

output circuit in the case with high protection level

·R2/(R1+R2) R1+R2≈5.1kΩ

MCU

Publication Date: September 2015

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Mitsubishi Electric PSS-S72FT User Manual

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