MITSUBISHI PS21965-4, PS21965-4A, PS21965-4C, PS21965-4W Technical data

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21965-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
PS21965-4
INTEGRATED POWER FUNCTIONS
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
• For upper-leg IGBTS :Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection.
• For lower-leg IGBT
S : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC).
• Fault signaling : Corresponding to an SC fault (Lower-leg IGBT) or a UV fault (Lower-side supply).
• Input interface : 3V, 5V line (High Active).
•UL Approved : Yellow Card No. E80276
APPLICATION
AC100V~200V three-phase inverter drive for small power motor control.
Fig. 1 PACKAGE OUTLINES (PS21965-4)
±0.5
20×1.778(=35.56)
0.28
±0.2
1.778
17 1
QR
2-R1.6
12
2.54
0.28
±0.2
0.5
HEAT SINK SIDE
Code
3 MIN
±0.3
Type name Lot No.
14×2.54(=35.56)
A
16-0.5
(1)
±0.5
24
4-C1.2
8-0.6
0.50.5
0.5
±0.5
±0.5
9.5
5.5
B
3.5
±0.05
0.4
±0.5
14.4 (3.5)
±0.5
29.2
±0.5
14.4
0.4
2.5 MIN
(2.656)
(2.756)
DETAIL A DETAIL B
1.5
(3.3)
0.8
HEAT SINK SIDE
(0~5°)
(1.2)
(1.2)
Dimensions in mm
TERMINAL CODE
1. NC
2. V
UFB
3. V
VFB
4. V
WFB
5. U
P
6. V
P
7. W
P
8. V
P1
9. VNC *
10. U
N
11. V
N
12. W
N
13. V
N1
14. F
O
15. CIN
NC
*
16. V
17. NC
18. NC
19. NC
20. N
21. W
22. V
23. U
24. P
25. NC
1.5 MIN
*) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and
leave another one open.
Aug. 2007
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21965-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 2 LONG TERMINAL TYPE PACKAGE OUTLINES (PS21965-4A)
±0.5
38
20×1.778(=35.56)
1.778
0.28
±0.2
±0.3
35
A
16-0.5
B
3.5
±0.05
1.5
TERMINAL CODE
0.4
17 1
.6
1
-R
2
12
QR Code
Type name Lot No.
3 MIN
18
0.28
±0.2
2.54 14×2.54(=35.56)
0.5
0.5
(1)
±0.5
14.4
±0.5
±0.5
24
29.4
(3.5)
±0.5
0.8
14.4
25
4-C1.2
8-0.6
0.50.5
0.4
2.5 MIN
(3.3)
HEAT SINK SIDE
(0~5°)
(2.656)
±0.5
14
±0.5
5.5
(2.756)
HEAT SINK SIDE
NC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and
*) Two V
(1.2)
(1.2)
DETAIL A DETAIL B
leave another one open.
Dimensions in mm
1. NC
2. V
UFB
3. V
VFB
4. V
WFB
5. U
P
6. V
P
7. W
P
8. V
P1
9. VNC *
10. U
N
11. V
N
12. W
N
13. V
N1
14. F
O
15. CIN
16. V
NC
*
17. NC
18. NC
19. NC
20. N
21. W
22. V
23. U
24. P
25. NC
1.5 MIN
Fig. 3 ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21965-4C)
33.7
±0.5
29.2
±0.5
18.9
(2.656)
(2.756)
B
±0.5
14.4
±0.5
14.4
DETAIL A
±0.5
38
20×1.778(=35.56)
1.778
0.28
±0.2
±0.3
35
17 1
QR
2-R1.6
12
Code
Type name Lot No.
3 MIN
18
0.28
±0.2
2.54 14×2.54(=35.56)
0.5
HEAT SINK SIDE
A
16-0.5
(1)
±0.5
±0.5
24
25
4-C1.2
8-0.6
0.5
0.5
±0.5
±0.5
9.5
5.5
(3.5)
3.5
±0.05
1.5
0.4
0.4
0.8
HEAT SINK SIDE
0.4
(0~5°)
(0~5°)
(1.2)
(1.2)
Dimensions in mm
TERMINAL CODE
1. NC
2. V
UFB
3. V
VFB
4. V
WFB
5. U
P
6. V
P
7. W
8. V
P1
9. VNC *
10. U
N
11. V
N
12. W
13. V
N1
14. F
O
15. CIN
16. V
NC
17. NC
18. NC
19. NC
20. N
21. W
22. V
23. U
24. P
25. NC
DETAIL B
P
N
*
1.5 MIN
*) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and
leave another one open.
Aug. 2007
2
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21965-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 4 BOTH SIDES ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21965-4W)
±0.6
35.2
B
3.5
±0.05
1.5
0.4
±0.5
14.4
±0.5
14.4
(3.5)
0.4
0.8
0.4
0.4
HEAT SINK SIDE
°)
(0~5
°)
(0~5
±0.5
17.4
±0.5
29.2
±0.5
17.4
2.5 MIN
(2.656)
(1.2)
(2.756)
(1.2)
DETAIL A DETAIL B
±0.5
38
20×1.778(=35.56)
1.778
0.28
±0.25
±0.3
35
17 1
QR
2-R1.6
12
Code
Type name Lot No.
3 MIN
18
(1.8)
0.28
±0.25
2.54 14×2.54(=35.56)
0.5
HEAT SINK SIDE
A
16-0.5
(1)
±0.5
24
25
4-C1.2
7-0.6
0.5
0.5
±0.5
11
±0.5
5.5
TERMINAL CODE
1. NC
2. V
3. V
4. V
5. U
6. V
7. W
8. V
9. VNC *
10. U
11. V
12. W
13. V
14. F
15. CIN
16. V
17. NC
18. NC
19. NC
20. N
21. W
22. V
23. U
24. P
25. NC
Dimensions in mm
UFB
VFB
WFB
P
P
P
P1
N
N
N
N1
O
NC
*
1.5 MIN
*) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and
leave another one open.
Fig. 5 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE)
CBU–
CBV–
CBW–
CBU+
CBV+
V
S
NC
CBW+
C2 C1
(Note 6)
S
U
V
W
(15V line)
(Note 7)
C1 : Electrolytic type with good temperature and frequency
characteristics (Note : The capacitance value depends on the PWM control
scheme used in the applied system).
C2 : 0.22~2µF R-category ceramic capacitor for noise filtering.
Inrush current limiter circuit
High-side input (PWM) (3V, 5V line)(Note 1,
Input signal conditioning
Level shifter
Protection
circuit (UV)
Drive circuit
P
2)
Input signal conditioning
Level shifter
Drive circuit
Input signal conditioning
Level shifter
Drive circuit
H-side IGBT
AC line input
(Note 4)
C
Z
Z : ZNR (Surge absorber) C : AC filter (Ceramic capacitor 2.2~6.5nF)
(Note : Additionally, an appropriate line-to line
surge absorber circuit may become necessary depending on the application environment).
Note1: Input logic is high-active. There is a 3.3k(min) pull-down resistor built-in each input circuit. When using an external CR filter, please make it satisfy the input threshold voltage.
2: By virtue of integrating an application specific type HVIC inside the module, direct coupling to MCU terminals without any opto-coupler or transformer
isolation is possible. (see also Fig. 11)
3: This output is open drain type. The signal line should be pulled up to the positive side of the 5V power supply with approximately 10k resistor.
(see also Fig. 11)
4: The wiring between the power DC link capacitor and the P, N1 terminals should be as short as possible to protect the DIP-IPM against catastrophic high surge voltages. For extra precaution, a small film type snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to these P & N1 DC power input pins.
5: High voltage (600V or more) and fast recovery type (less than 100ns) diodes should be used in the bootstrap circuit.
6: It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction.
7: Bootstrap negative electrodes should be connected to U, V, W terminals directly and separated from the main output wires.
N1
N
V
NC
CIN
Input signal conditioning
Low-side input (PWM) (3V, 5V line)(Note 1, 2)
Drive circuit
Fo logic
F
O
Fault output (5V line) (Note 3)
Protection
circuit
Control supply Under-Voltage
protection
L-side IGBT
(Note 5)
DIP-IPM
AC line output
(Note 6)
V
D
M
Aug. 2007
3
Loading...
+ 7 hidden pages