Mitsubishi MH8S64BBKG-10L, MH8S64BBKG-8, MH8S64BBKG-8L, MH8S64BBKG-7, MH4S64BBKG-7L Datasheet
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Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
DESCRIPTION
The MH4S64BBKG is 4194304 - word by 64-bit
Synchronous DRAM module. This consists of four
industry standard 4Mx16 Synchronous DRAMs in
TSOP and one industory standard EEPROM in
TSSOP.
The mounting of TSOP on a card edge Dual Inline
package provides any application where high
densities and large quantities of memory are
required.
This is a socket type - memory modules, suitable for
easy interchange or addition of modules.
FEATURES
Frequency
-7,-7L
-8,-8L
-10,-10L
100MHz
PC100 compliant
CLK Access Time
(Component SDRAM)
6.0ns(CL=3)
6.0ns(CL=3)100MHz
8.0ns(CL=3)100MHz
Utilizes industry standard 4M x 16 Synchronous DRAMs
TSOP and industry standard EEPROM in TSSOP
144-pin (72-pin dual in-line package)
single 3.3V±0.3V power supply
Clock frequency 100MHz(max.)
Fully synchronous operation referenced to clock rising
edge
4 bank operation controlled by BA0,1(Bank Address)
/CAS latency- 2/3(programmable)
Burst length- 1/2/4/8/Full Page(programmable)
Burst type- sequential / interleave(programmable)
Column access - random
Auto precharge / All bank precharge controlled by A10
Auto refresh and Self refresh
4096 refresh cycle /64ms
LVTTL Interface
PCB Outline
(Front)
(Back)
APPLICATION
main memory or graphic memory in computer systems
1
2
143
144
MIT-DS-0295-0.0
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Preliminary Spec.
Some contents are subject to change without notice.
PIN CONFIGURATION
MITSUBISHI LSIs
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
PIN
Number
1
3
5
7
9
11
13
15
17
19
21 22 93 94
23 24
25 26 97 98
27 28 99 100
29 30 101 102
31 32 103 104
33 34 105 106
35 36 107 108
37 38 109 110
39 40 111 112
41 42 113 114
43 44 115 116
45 46 117 118
47 48 119 120
49 50 121 122
51 52 123 124
53 54 125 126
55 56 127 128
57 58 129 130
59 60 131 132
61 62 133 134
63 64 135 136
65 66 137 138
67 68 139 140
69 70 141 142
71 72 143 144
Front side
Pin Name
Vss
DQ0
DQ1
DQ2
DQ3
Vcc
DQ4
DQ5
DQ6
DQ7
Vss Vss DQ20 DQ52
DQMB0 DQMB4 DQ21 DQ53
DQMB1 DQMB5 DQ22 DQ54
Vcc Vcc DQ23 DQ55
A0 A3 Vcc Vcc
A1 A4 A6 A7
A2 A5 A8 BA0
Vss Vss Vss Vss
DQ8 DQ40 A9 BA1
DQ9 DQ41 A10 A11
DQ10 DQ42 Vcc Vcc
DQ11 DQ43 DQMB2 DQMB6
Vcc Vcc DQMB3 DQMB7
DQ12 DQ44 Vss Vss
DQ13 DQ45 DQ24 DQ56
DQ14 DQ46 DQ25 DQ57
DQ15 DQ47 DQ26 DQ58
Vss Vss DQ27 DQ59
NC NC
NC NC
CLK0 CKE0 DQ29 DQ61
Vcc Vcc DQ30 DQ62
/RAS /CAS DQ31 DQ63
/WE
/S0
NC NC
PIN
Number
2
4
6
8
10
12
14
16
18
20
Back side
Pin Name
Vss
DQ32
DQ33
DQ34
DQ35
Vcc
DQ36
DQ37
DQ38
DQ39
NC
NC
PIN
Number
73 74
75 76
77
79 80
81 82
83 84
85
87
89 90
91 92
95
Front side
Pin Name
NC
Vss Vss
NC NC
NC NC
Vcc Vcc
DQ16 DQ48
DQ17 DQ49
DQ18 DQ50
DQ19 DQ51
Vss Vss
Vcc Vcc
DQ28 DQ60
Vss Vss
SDA SCL
Vcc Vcc
PIN
Number
78
86
88
96
Back side
Pin Name
CLK1
MIT-DS-0295-0.0
NC = No Connection
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Preliminary Spec.
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Block Diagram
/S0
MITSUBISHI LSIs
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
DQMB0
DQMB1
DQMB2
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQML
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQMU
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
DQML
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
/CS
D0
/CS
D1
DQMB4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQMB5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQMB6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQML
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQMU
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
DQML
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
/CS
D2
/CS
D3
DQMB3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
CLK0
CKE0
/RAS
/CAS
/WE
BA0,BA1,A<11:0> D0 - D3
Vcc
Vss
10Ω
DQMU
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
D0 - D3
D0 - D3
D0 - D3
D0 - D3
D0 - D3
D0 - D3
D0 - D3
MIT-DS-0295-0.0
DQMB7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
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SCL
DQMU
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
CLK1
10Ω
SERIAL PD
A0 A1 A2
10pF
SDA
22.Dec.1998
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
Serial Presence Detect Table I
Byte Function described SPD enrty data SPD DATA(hex)
0 Defines # bytes written into serial memory at module mfgr 128 80
1 Total # bytes of SPD memory device 256 Bytes 08
2 Fundamental memory type SDRAM 04
3 # Row Addresses on this assembly A0-A11 0C
4 # Column Addresses on this assembly
5 # Module Banks on this assembly 1BANK 01
6 Data Width of this assembly... x64 40
7 ... Data Width continuation 0 00
8 Voltage interface standard of this assembly LVTTL 01
SDRAM Cycletime at Max. Supported CAS Latency (CL).
9
Cycle time for CL=3
10 SDRAM Access from Clock 6ns 60
tAC for CL=3 8ns 80
11 DIMM Configuration type (Non-parity,Parity,ECC) Non-PARITY 00
12 Refresh Rate/Type self refresh(15.625uS) 80
13 SDRAM width,Primary DRAM
14 Error Checking SDRAM data width N/A 00
15 Minimum Clock Delay,Back to Back Random Column Addresses 1 01
16 Burst Lengths Supported
17 # Banks on Each SDRAM device 4bank 04
18 CAS# Latency
19 CS# Latency 0 01
20 Write Latency 0 01
21 SDRAM Module Attributes non-buffered,non-registered 00
22 SDRAM Device Attributes:General Precharge All,Auto precharge
23 SDRAM Cycle time(2nd highest CAS latency)
Cycle time for CL=2
24
25 SDRAM Cycle time(3rd highest CAS latency) N/A 00
26
27 Precharge to Active Minimum 20ns 14
28 Row Active to Row Active Min. 20ns 14
29 RAS to CAS Delay Min 20ns 14
30 Active to Precharge Min 50ns 32
SDRAM Access form Clock(2nd highest CAS latency)
tAC for CL=2
SDRAM Access form Clock(3rd highest CAS latency)
-7,7L,-8,8L
-10,10L
-7,7L
-8,8L
-10,10L
-8,8L
-10,10L
-7,7L,-8,8L
-10,10L
-7,7L,-8,8L
-10,10L
-7,7L,-8,8L
-10,10L
A0-A7 08
10ns
x16 10
1/2/4/8/Full page 8F
2/3 06
10ns
13ns D0
15ns F0
6ns 60-7,7L
7ns 70
8ns 80
N/A 00
30ns 1E
30ns 1E
60ns 3C
A0
0E
A0
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Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
Serial Presence Detect Table II
31 Density of each bank on module 32MByte 08
32 Command and Address signal input setup time -7,7L,-8,8L
-10,10L
33 Command and Address signal input hold time -7,7L,-8,8L
-10,10L
34 Data signal input setup time -7,7L,-8,8L
-10,10L
35 Data signal input hold time -7,7L,-8,8L
-10,10L
36-61
62 SPD Revision
63 Checksum for bytes 0-62
64-71 Manufactures Jedec ID code per JEP-108E MITSUBISHI 1CFFFFFFFFFFFFFF
72 Manufacturing location Miyoshi,Japan 01
73-90 Manufactures Part Number
91-92 Revision Code PCB revision rrrr
93-94 Manufacturing date year/week code yyww
95-98 Assembly Serial Number serial number ssssssss
99-125 Manufacture Specific Data option 00
126 Intetl specification frequency
127 Intel specification CAS# Latency support
128+ Unused storage locations open 00
Superset Information (may be used in future) option 00
-7,7L,-8,8L
-10,10L
Check sum for -10,-10L 41
-7,7L-8,8L
-10,10L
-7,7L
-8,8L 8D
-10,10L
2ns
N/A
1ns
N/A
2ns
N/A
1ns
N/A
rev 1.2A 12
rev 1 01
Check sum for -7,7L 04
Check sum for -8,-8L 44
Tajima,Japan 02
NC,USA 03
Germany 04
MH4S64BBKG-7
MH4S64BBKG-7L
MH4S64BBKG-8
MH4S64BBKG-8L
MH4S64BBKG-10
MH4S64BBKG-10L
100MHz 64
66MHz 66
4D483453363442424B472D374C2020202020
4D483453363442424B472D37202020202020
4D483453363442424B472D38202020202020
4D483453363442424B472D384C2020202020
4D483453363442424B472D31302020202020
4D483453363442424B472D31304C20202020
20
00
10
00
20
00
10
00
8F
06
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Preliminary Spec.
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PIN FUNCTION
MITSUBISHI LSIs
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
CLK
(CLK0 ~ CLK1)
CKE0 Input
/S0
/RAS,/CAS,/WE Input Combination of /RAS,/CAS,/WE defines basic commands.
A0-11 Input
Input
Input
Master Clock:All other inputs are referenced to the rising
edge of CK
Clock Enable:CKE controls internal clock.When CKE is
low,internal clock for the following cycle is ceased. CKE is
also used to select auto / self refresh. After self refresh
mode is started, CKE E becomes asynchronous input.Self
refresh is maintained as long as CKE is low.
Chip Select: When /S is high,any command means
No Operation.
A0-11 specify the Row/Column Address in conjunction with
BA0,1.The Row Address is specified by A0-11.The Column
Address is specified by A0-7.A10 is also used to indicate
precharge option.When A10 is high at a read / write
command, an auto precharge is performed. When A10 is
high at a precharge command, both banks are precharged.
BA0,1 Input
DQ0-63
DQMB0-7 Input
Vdd,Vss
SCL
SDA
MIT-DS-0295-0.0
Bank Address:BA0,1 is not simply BA.BA specifies the
bank to which a command is applied.BA0,1 must be set
with ACT,PRE,READ,WRITE commands
Input/Output
Power Supply Power Supply for the memory mounted module.
Input
Output
Data In and Data out are referenced to the rising edge of
CK
Din Mask/Output Disable:When DQMB is high in burst
write.Din for the current cycle is masked.When DQMB is high
in burst read,Dout is disabled at the next but one cycle.
Serial clock for serial PD
Serial data for serial PD
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Preliminary Spec.
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MITSUBISHI LSIs
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
BASIC FUNCTIONS
The MH4S64BBKG provides basic functions,bank(row)activate,burst read / write,
bank(row)precharge,and auto / self refresh.
Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In
addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and
precharge option,respectively.
To know the detailed definition of commands please see the command truth table.
CK
/S Chip Select : L=select, H=deselect
/RAS Command
/CAS Command
/WE
CKE
A10
Command
Refresh Option @refresh
command
Precharge Option @precharge or read/write
command
define basic commands
Activate(ACT) [/RAS =L, /CAS = /WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read(READ) [/RAS =H,/CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA.First output
data appears after /CAS latency. When A10 =H at this command,the bank is
deactivated after the burst read(auto-precharge,READA).
Write(WRITE) [/RAS =H, /CAS = /WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data
length to be written is set by burst length. When A10 =H at this command, the bank is
deactivated after the burst write(auto-precharge,WRITEA).
Precharge(PRE) [/RAS =L, /CAS =H,/WE =L]
PRE command deactivates the active bank indicated by BA. This command also
terminates burst read / write operation. When A10 =H at this command, both banks are
deactivated(precharge all, PREA).
Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H]
PEFA command starts auto-refresh cycle. Refresh address including bank address are
generated internally. After this command, the banks are precharged automatically.
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Preliminary Spec.
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COMMAND TRUTH TABLE
COMMAND MNEMONIC
Deselect DESEL H X H X X X X X X
No Operation NOP H X L H H H X X X
CKE
n-1
MITSUBISHI LSIs
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
CKE
n
/S
/RAS
/CAS
/WE BA0,1 A10
A11
X
X
A0-9
Row Adress Entry &
Bank Activate
Single Bank Precharge PRE H X L L H L V L X
Precharge All Bank
Column Address Entry
& Write
Column Address Entry
& Write with Auto-
Precharge
Column Address Entry
& Read
Column Address Entry
& Read with Auto
Precharge
Auto-Refresh REFA H H L L L H X X X
Self-Refresh Entry REFS H L L L L H X X X
Self-Refresh Exit REFSX L H H X X X X X X
Burst Terminate TERM
Mode Register Set
ACT H X L L H H V V V
PREA
WRITE
WRITEA H X L H L L V H V
READ H X L H L H V L V
READA H X L H L H V H V
MRS
H X L L H L X H X
H X L H L L V L V
L H L H H H X X X
H X L H H L X X X
H X L L L L L L
V
X
X
X
X
X
X
X
X
X
X
X
L
V*1
H =High Level, L = Low Level, V = Valid, X = Don't Care, n = CK cycle number
NOTE:
1.A7-9 = 0, A0-6 = Mode Address
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Preliminary Spec.
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FUNCTION TRUTH TABLE
MITSUBISHI LSIs
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
Current State /S /RAS /CAS /WE Address
IDLE H X X X X DESEL NOP
L H H H X NOP NOP
L H H L
L H L X
L L H H
L L H L
L L L H X REFA
L L L L
ROW ACTIVE H X X X X DESEL NOP
L H H H X NOP NOP
L H H L BA TBST NOP
L H L H BA,CA,A10 READ/READA
L H L L BA,CA,A10
L L H H BA,RA ACT Bank Active/ILLEGAL*2
L L H L BA,A10 PRE/PREA Precharge/Precharge All
L L L H X REFA ILLEGAL
L L L L
READ H X X X X DESEL NOP(Continue Burst to END)
L H H H X NOP NOP(Continue Burst to END)
L H H L
L H L H BA,CA,A10 READ/READA
L H L L BA,CA,A10 WRITE/WRITEA
L L H H BA,RA ACT Bank Active/ILLEGAL*2
L L H L BA,A10 PRE/PREA Terminate Burst,Precharge
L L L H X REFA ILLEGAL
L L L L
BA TBST ILLEGAL*2
BA,CA,A10
BA,RA
BA,A10 PRE/PREA NOP*4
Op-Code,
Mode-Add
Op-Code,
Mode-Add
BA
Op-Code,
Mode-Add
Command
READ/WRITE ILLEGAL*2
ACT Bank Active,Latch RA
Auto-Refresh*5
MRS Mode Register Set*5
Begin Read,Latch CA,
Determine Auto-Precharge
WRITE/
WRITEA
MRS ILLEGAL
TBST Terminate Burst
MRS ILLEGAL
Begin Write,Latch CA,
Determine Auto-Precharge
Terminate Burst,Latch CA,
Begin New Read,Determine
Auto-Precharge*3
Terminate Burst,Latch CA,
Begin Write,Determine AutoPrecharge*3
Action
MIT-DS-0295-0.0
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Preliminary Spec.
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MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
FUNCTION TRUTH TABLE(continued)
MITSUBISHI LSIs
Current State /S /RAS /CAS /WE Address
WRITE H X X X X DESEL NOP(Continue Burst to END)
L H H H X NOP NOP(Continue Burst to END)
L H H L BA TBST Terminate Burst
L H L H BA,CA,A10
L H L L BA,CA,A10
L L H H BA,RA ACT Bank Active/ILLEGAL*2
L L H L BA,A10 PRE/PREA Terminate Burst,Precharge
L L L H X REFA ILLEGAL
L L L L
READ with H X X X X DESEL NOP(Continue Burst to END)
AUTO L H H H X NOP NOP(Continue Burst to END)
PRECHARGE L H H L BA TBST ILLEGAL
L H L H BA,CA,A10 READ/READA ILLEGAL
L H L L BA,CA,A10
L L H H BA,RA ACT Bank Active/ILLEGAL*2
L L H L BA,A10 PRE/PREA ILLEGAL*2
L L L H X REFA ILLEGAL
L L L L
WRITE with H X X X X DESEL NOP(Continue Burst to END)
AUTO L H H H X NOP NOP(Continue Burst to END)
PRECHARGE L H H L
L H L H BA,CA,A10 READ/READA ILLEGAL
L H L L BA,CA,A10
L L H H
L L H L BA,A10 PRE/PREA ILLEGAL*2
L L L H X REFA ILLEGAL
L L L L
Op-Code,
Mode-Add
Op-Code,
Mode-Add
BA
BA,RA
Op-Code,
Mode-Add
Command
Terminate Burst,Latch CA,
READ/READA
WRITE/
WRITEA
MRS ILLEGAL
WRITE/
WRITEA
MRS ILLEGAL
TBST ILLEGAL
WRITE/
WRITEA
ACT Bank Active/ILLEGAL*2
MRS ILLEGAL
Begin Read,Determine AutoPrecharge*3
Terminate Burst,Latch CA,
Begin Write,Determine AutoPrecharge*3
ILLEGAL
ILLEGAL
Action
MIT-DS-0295-0.0
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Preliminary Spec.
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MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
FUNCTION TRUTH TABLE(continued)
MITSUBISHI LSIs
Current State /S /RAS /CAS /WE Address
PRE - H X X X X DESEL NOP(Idle after tRP)
CHARGING L H H H X NOP NOP(Idle after tRP)
L H H L BA TBST ILLEGAL*2
L H L X BA,CA,A10 READ/WRITE ILLEGAL*2
L L H H BA,RA ACT ILLEGAL*2
L L H L BA,A10 PRE/PREA NOP*4(Idle after tRP)
L L L H X REFA ILLEGAL
Op-Code,
L L L L
Mode-Add
ROW H X X X X DESEL NOP(Row Active after tRCD
ACTIVATING L H H H X NOP NOP(Row Active after tRCD
L H H L BA TBST ILLEGAL*2
L H L X BA,CA,A10 READ/WRITE ILLEGAL*2
L L H H BA,RA ACT ILLEGAL*2
L L H L BA,A10 PRE/PREA ILLEGAL*2
L L L H X REFA ILLEGAL
Op-Code,
L L L L
Mode-Add
Command
MRS ILLEGAL
MRS ILLEGAL
Action
WRITE RE- H X X X X DESEL NOP
COVERING L H H H X NOP NOP
L H H L BA TBST ILLEGAL*2
L H L X BA,CA,A10 READ/WRITE ILLEGAL*2
L L H H BA,RA ACT ILLEGAL*2
L L H L BA,A10 PRE/PREA ILLEGAL*2
L L L H X REFA ILLEGAL
L L L L
MIT-DS-0295-0.0
Op-Code,
MRS ILLEGAL
Mode-Add
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Preliminary Spec.
Some contents are subject to change without notice.
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
FUNCTION TRUTH TABLE(continued)
Current State /S /RAS /CAS /WE Address Command Action
RE- H X X X X DESEL NOP(Idle after tRC)
FRESHING L H H H X NOP
L H H L BA TBST ILLEGAL
L H L X BA,CA,A10 READ/WRITE ILLEGAL
L L H H BA,RA ACT ILLEGAL
L L H L BA,A10 PRE/PREA ILLEGAL
L L L H X REFA ILLEGAL
NOP(Idle after tRC)
MITSUBISHI LSIs
L L L L
MODE H X X X X DESEL NOP(Idle after tRSC)
REGISTER L H H H X NOP NOP(Idle after tRSC)
SETTING L H H L BA TBST ILLEGAL
L H L X BA,CA,A10 READ/WRITE ILLEGAL
L L H H BA,RA ACT ILLEGAL
L L H L BA,A10 PRE/PREA ILLEGAL
L L L H X REFA ILLEGAL
L L L L
Op-Code,
MRS ILLEGAL
Mode-Add
Op-Code,
MRS ILLEGAL
Mode-Add
ABBREVIATIONS:
H = Hige Level, L = Low Level, X = Don't Care
BA = Bank Address, RA = Row Address, CA = Column Address, NOP = No Operation
NOTES:
1. All entries assume that CKE was High during the preceding clock cycle and the current
clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA,
depending on the state of that bank.
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state.May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
ILLEGAL = Device operation and / or date-integrity are not guaranteed.
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22.Dec.1998
Preliminary Spec.
Some contents are subject to change without notice.
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
FUNCTION TRUTH TABLE FOR CKE
MITSUBISHI LSIs
Current State
SELF - H X X X X X X
REFRESH*1 L H H X X X X
POWER H X X X X X X
DOWN L H X X X X X
ALL BANKS H H X X X X X
IDLE*2 H L L L L H X
ANY STATE H H X X X X X
other than H L X X X X X
listed above L H X X X X X
CK
CK
n-1
L H L H H H X
L H L H H L X
L H L H L X X
L H L L X X X
L L X X X X X
L L X X X X X
H L H X X X X
H L L H H H X
H L L H H L X
H L L H L X X
H L L L X X X
L X X X X X X
L L X X X X X
n
/RAS /CAS /WE Add
/S
Action
INVALID
Exit Self-Refresh(Idle after tRC)
Exit Self-Refresh(Idle after tRC)
ILLEGAL
ILLEGAL
ILLEGAL
NOP(Maintain Self-Refresh)
INVALID
Exit Power Down to Idle
NOP(Maintain Self-Refresh)
Refer to Function Truth Table
Enter Self-Refresh
Enter Power Down
Enter Power Down
ILLEGAL
ILLEGAL
ILLEGAL
Refer to Current State = Power Down
Refer to Function Truth Table
Begin CK0 Suspend at Next Cycle*3
Exit CK0 Suspend at Next Cycle*3
Maintain CK0 Suspend
ABBREVIATIONS:
H = High Level, L = Low Level, X = Don't Care
NOTES:
1. CKE Low to High transition will re-enable CK and other inputs asynchronously.
A minimum setup time must be satisfied before any command other than EXIT.
2. Power-Down and Self-Refresh can be entered only form the All banks idle State.
3. Must be legal command.
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Preliminary Spec.
Some contents are subject to change without notice.
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
SIMPLIFIED STATE DIAGRAM
MITSUBISHI LSIs
SELF
REFRESH
REFS
REFSX
WRITE
SUSPEND
MODE
REGISTER
SET
CLK
SUSPEND
CKEL
WRITE
CKEH
WRITEA READA
MRS
IDLE
ACT
CKEL
CKEH
ROW
ACTIVE
WRITE READ
WRITEA
WRITE
WRITEA
READA
READ
READA
REFA
CKEL
CKEH
READ
AUTO
REFRESH
POWER
DOWN
CKEL
CKEH
READ
SUSPEND
POWER
APPLIED
MIT-DS-0295-0.0
WRITEA
SUSPEND
CKEL
CKEH
POWER
ON
WRITEA
PRE
PRE
PRE PRE
PRE
CHARGE
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READA
CKEL
CKEH
READA
SUSPEND
Automatic Sequence
Command Sequence
22.Dec.1998
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
POWER ON SEQUENCE
Before starting normal operation, the following power on sequence is necessary to prevent a
SDRAM from damaged or malfunctioning.
1. Clock will be applied at power up along with power.Attempt to maintain CKE high,DQM0-7
high and NOP condition at the inputs along with power.
2. Maintain stable power, stable cock, and NOP input conditions for a minimum of 500us.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
Burst Length, Burst Type and /CAS Latency can be programmed by setting the mode
register(MRS). The mode register stores these date until the next MRS command, which may
be issued when both banks are in idle state. After tRSC from a MRS command, the SDRAM is
ready for new command.
LATENCY
MODE
00
CL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0BA1BA0
0 0
/CAS LATENCY
WM
R
R
2
3
R
R
R
R
0 0
LTMODE BT BL
BURST
LENGTH
BURST
TYPE
BA0,1 A11-0
BL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
0
1
CK
/S
/RAS
/CAS
/WE
BT= 0 BT= 1
1
2
4
8
R
R
R
FP
SEQUENTIAL
INTERLEAVED
V
1
2
4
8
R
R
R
R
WRITE
MODE
MIT-DS-0295-0.0
BURST
0
SINGLE BIT
1
MITSUBISHI
R:Reserved for Future Use
FP: Full Page
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Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
[ /CAS LATENCY]
/CAS latency,CL,is used to synchronize the first output data with the CLK frequency,i.e.,the
speed of CLK determines which CL should be used.First output data is available after CL
cycles from READ command.
/CAS Latency Timing(BL=4)
CK
Command
Address
ACT
tRCD
X
READ
Y
DQ
CL=2
DQ
Q0 Q1 Q2 Q3
CL=3
Q0 Q1 Q2 Q3
CL=2
CL=3
[ BURST LENGTH ]
The burst length,BL,determines the number of consecutive wrutes or reads that will be
automatically performed after the initial write or read command.For BL=1,2,4,8,full page the
output data is tristated(Hi-Z) after the last read.For BL=FP (Full Page),the TBST (Burst
Terminate) command should be issued to stop the output of data.
Burst Length Timing(CL=2)
tRCD
CK
Command
Address
ACT
X
READ
Y
DQ
DQ
DQ
DQ
DQ
MIT-DS-0295-0.0
Q0
Q0 Q1
Q0 Q1 Q2 Q3
Q0 Q1 Q2 Q3 Q5 Q6Q4 Q7
Q0 Q1 Q2 Q3 Q5 Q6Q4 Q7
m=255
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Q8
Qm Q0 Q1
Full Page counter rolls over
and continues to count.
BL=1
BL=2
BL=4
BL=8
BL=FP
22.Dec.1998
Preliminary Spec.
Some contents are subject to change without notice.
CK
MITSUBISHI LSIs
MH4S64BBKG -7,-7L,-8,-8L,-10,-10L
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
Command
Address
DQ
Initial Address
A2 A1 A0
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
CL= 3
BL= 4
BL
8
Read
Y
Q0 Q1 Q2 Q3
/CAS Latency Burst Length Burst Length
Burst Type
Column Addressing
Sequential Interleaved
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
1 2 3 4 5 6 7 0 1 0 3 2 5 4 7 6
2 3 4 5 6 7 0 1 2 3 0 1 6 7 4 5
3 4 5 6 7 0 1 2 3 2 1 0 7 6 5 4
4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3
Write
Y
D0 D1
D2
D3
1 0 1
1 1 0
1 1 1
- 0 0
- 0 1
- 1 0
- 1 1
- - 0
- - 1
MIT-DS-0295-0.0
5 6 7 0 1 2 3 4 5 4 7 6 1 0 3 2
6 7 0 1 2 3 4 5 6 7 4 5 2 3 0 1
7 0 1 2
0 1 2 3
1 2 3 0
4
2 3 0 1
3 0
0 1
2
1 0
3 4 5 6 3 2 1 0
1 2
7 6 5 4
0 1 2 3
1 0 3 2
2 3 0 1
3 2
0 1
1 0
1 0
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