Mitsubishi MA114-1 Datasheet

MA1114-1

2. Electrical Performances (Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω)

No. Items

Frequency

1

Symbol

f

Unit

MHz

Standard

Condition

1990– – –1930
Output Power2 Pout dBm– – –– – –+45
Output RF modulation

spectrum ; from
the carrier

3 – – –

2fo
3fo
4fo

dB
dB
dB
dB
dB

dB
dB
dB

+0.5

–30
–33
–60
–70

–73
–75
–80

– – –
– – –
– – –
– – –
– – –

– – –
– – –
– – –

– – –
– – –
– – –
– – –
– – –

– – –
– – –
– – –

MaxTypeMin

Quiescent current6 Icq A1.5– – –– – –

Spurious ; in-band

out-band

4 dBm

dBm

–36
–30

– – –
– – –

– – –
– – –

Harmonics5 dBc

dBc
dBc

– – –

– – –

– – –

–60
–65
–70

– – –
– – –
– – –

100 KHz
200 KHz
250 KHz
400 KHz

600 KHz
to < 1200 KHz
1200 KHz
to < 1800 KHz
1800 KHz
to < 6000 KHz

>

=

6000 KHz

P

out = +45 dBm

(P

in control)

P

out = +45 dBm

P

in = 0mW

– 99 –– 98 –

MA1114-1

For PCS - 30W Power Amplifier

MA1114-1

Vg(–6V:PIN#12)

GND(PIN#11)

Vd(+10V:PIN#24)

RF IN RF OUT

Vc(+25V:PIN#25)

25 PINs D-SUB

Vdet(PIN#13)
(out)

142 mm

148 mm

3 mm

71
mm

77
mm

40
mm

3

mm

10 mm

4 HOLES
φ 3.5 mm

DESCRIPTION

The MA1114-1 is a 30W power amplifier
designed for PCS, which comprises 4 stages
GaAs FET and 2 stages Si bipolar transistors,
also RF power monitoring circuit.

FEATURES

■Specified +25/+10 Volt Chracteristics

• RF Output Power : +45 dBm (typ.)

• Harmonics : –65 dBc typ.

■Small Size : 77 × 148 × 40 mm

3

■50 Ohm Input/Output Impedances

APPLICATION

■PCS (1930 ~ 1990 MHz)

Base station

Amplifier Specifications (MA1114-1)

1. Maximum Ratings

OUTLINE DRAWING

No. Condition

Case temperature

1
2
3
4
5

Storage temperature

Collector Voltage

Drain Voltage

Gate Voltage

SymbolItems

TC

Tstg

VC
Vd
Vg

Unit

°C
°C

V
V
V

Vg = –6V

Vd = +10V

Standard

–40 ~ +70
–40 ~ +80

+26.0
+11.5
–10.0

6 RF Input Power Pin dBm–9.0