Mitsubishi MA114-1 Datasheet

MA1114-1
2. Electrical Performances (Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50)
No. Items
Frequency
1
Symbol
f
MHz
Standard
Condition
1990– – –1930 Output Power2 Pout dBm– – –– – –+45 Output RF modulation
spectrum ; from the carrier
3 – – –
2fo 3fo 4fo
dB dB dB dB dB
dB dB dB
+0.5
–30 –33 –60 –70
–73 –75 –80
– – – – – – – – – – – – – – –
– – – – – – – – –
– – – – – – – – – – – – – – –
– – – – – – – – –
MaxTypeMin
Quiescent current6 Icq A1.5– – –– – –
Spurious ; in-band
out-band
4 dBm
dBm
–36 –30
– – – – – –
– – – – – –
Harmonics5 dBc
dBc dBc
– – –
– – –
– – –
–60 –65 –70
– – – – – – – – –
100 KHz 200 KHz 250 KHz 400 KHz
600 KHz to < 1200 KHz 1200 KHz to < 1800 KHz 1800 KHz to < 6000 KHz
>
=
6000 KHz
P
out = +45 dBm
(P
in control)
P
out = +45 dBm
P
in = 0mW
– 99 –– 98 –
MA1114-1
For PCS - 30W Power Amplifier
MA1114-1
Vg(–6V:PIN#12)
GND(PIN#11)
Vd(+10V:PIN#24)
RF IN RF OUT
Vc(+25V:PIN#25)
25 PINs D-SUB
Vdet(PIN#13) (out)
142 mm
148 mm
3 mm
71 mm
77 mm
40 mm
3
mm
10 mm
4 HOLES φ 3.5 mm
DESCRIPTION
The MA1114-1 is a 30W power amplifier designed for PCS, which comprises 4 stages GaAs FET and 2 stages Si bipolar transistors, also RF power monitoring circuit.
FEATURES
Specified +25/+10 Volt Chracteristics
• RF Output Power : +45 dBm (typ.)
• Harmonics : –65 dBc typ.
Small Size : 77 × 148 × 40 mm
3
50 Ohm Input/Output Impedances
APPLICATION
PCS (1930 ~ 1990 MHz)
Base station
Amplifier Specifications (MA1114-1)
1. Maximum Ratings
OUTLINE DRAWING
No. Condition
Case temperature
1 2 3 4 5
Storage temperature
Collector Voltage
Drain Voltage
Gate Voltage
SymbolItems
TC
Tstg
VC Vd Vg
°C °C
V V V
Vg = –6V
Vd = +10V
Standard
–40 ~ +70 –40 ~ +80
+26.0 +11.5 –10.0
6 RF Input Power Pin dBm–9.0
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