Mitsubishi MA1100-1 Datasheet
No. Items
Frequency
1
Symbol
f
Unit
MHz
Standard
Condition
1880– – –1805
Output Power2 Pout dBm– – –– – –+45
Output RF modulation
spectrum ; from
the carrier
3 – – –
2fo
3fo
4fo
dB
dB
dB
dB
dB
dB
dB
dB
+0.5
–30
–33
–60
–70
–73
–75
–80
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
MaxTypeMin
Quiescent current6 Icq A1.5– – –– – –
Spurious ; in-band
out-band
4 dBm
dBm
–36
–30
– – –
– – –
– – –
– – –
Harmonics5 dBc
dBc
dBc
– – –
– – –
– – –
–60
–65
–70
– – –
– – –
– – –
100 KHz
200 KHz
250 KHz
400 KHz
600 KHz
to < 1200 KHz
1200 KHz
to < 1800 KHz
1800 KHz
to < 6000 KHz
>
=
6000 KHz
P
out = +45 dBm
(P
in control)
P
out = +45 dBm
P
in = OmW
MA1100-1
MA1100-1
Vg(–6V:PIN#12)
GND(PIN#11)
Vd(+10V:PIN#24)
RF IN RF OUT
Vc(+25V:PIN#25)
25 PINs D-SUB
Vdet(PIN#13)
(out)
142 mm 3 mm
148 mm
71
mm
77
mm
40
mm
3
mm
10 mm
4 HOLES
φ 3.5 mm
No. Condition
Case temperature
1
2
3
4
5
Storage temperature
Collector Voltage
Drain Voltage
Gate Voltage
SymbolItems
Tc
Tstg
VC
Vd
Vg
Unit
°C
°C
V
V
V
Vg = –6V
Vd = +10V
Standard
–40 ~ +70
–40 ~ +80
+26.0
+11.5
–10.0
6 RF Input Power Pin dBm–9.0
For DCS1800 - 30W Power Amplifier
MA1100-1
DESCRIPTION
The MA1100-1 is a 30W power amplifier
designed for DCS 1800, which comprises 4
stages GaAs FET and 2 stages Si bipolar
transistors, also RF power monitoring circuit.
FEATURES
■Specified +25/+10 Volt Chracteristics
• RF Output Power : +45 dBm (typ.)
• Harmonics : –65 dBc typ.
■Small Size : 77 × 148 × 40 mm
3
■50 Ohm Input/Output Impedances
APPLICATION
■DCS 1800 (1805 ~ 1880 MHz)
Base station
OUTLINE DRAWING
2. Electrical Performances (Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω)
Amplifier Specifications (MA1100-1)
1. Maximum Ratings
– 95 –– 94 –
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