Mitsubishi M5M5T5636UG-25, M5M5T5636UG-22, M5M5T5636UG-20 Datasheet

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M5M5T5636UG REV.0.2

M5M5T5636UG - 25

M5M5T5636UG - 22

M5M5T5636UG - 20

2001.July Rev.0.2

Advanced Information

Notice: This is not final specification. Some parametric limits are subject to change.

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M5M5T5636UG – 25,22,20

18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

DESCRIPTION

The M5M5T5636UG is a family of 18M bit synchronous SRAMs organized as 524288-words by 36-bit. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Mitsubishi's SRAMs are fabricated with high performance, low power CMOS technology, providing greater reliability. M5M5T5636UG operates on 2.5V power/ 1.8V I/O supply or a single 2.5V power supply and are 2.5V CMOS compatible.

FEATURES

• Fully registered inputs and outputs for pipelined operation

• Fast clock speed: 250, 225, and 200 MHz

• Fast access time: 2.6, 2.8, 3.2 ns

• Single 2.5V -5% and +5% power supply VDD

• Separate VDDQ for 2.5V or 1.8V I/O

• Individual byte write (BWa# - BWd#) controls may be tied

LOW

• Single Read/Write control pin (W#)

• CKE# pin to enable clock and suspend operations

• Internally self-timed, registers outputs eliminate the need to control G#

• Snooze mode (ZZ) for power down

• Linear or Interleaved Burst Modes

• Three chip enables for simple depth expansion

• JTAG boundary scan support

APPLICATION

High-end networking products that require high bandwidth, such as switches and routers.

FUNCTION

Synchronous circuitry allows for precise cycle control

triggered by a positive edge clock transition.

Synchronous signals include : all Addresses, all Data Inputs, all Chip Enables (E1#, E2, E3#), Address Advance/Load (ADV), Clock Enable (CKE#), Byte Write Enables (BWa#, BWb#, BWc#, BWd#) and Read/Write (W#). Write operations are controlled by the four Byte Write Enables (BWa# - BWd#) and Read/Write(W#) inputs. All writes are conducted with on-chip synchronous selftimed write circuitry.

Asynchronous inputs include Output Enable (G#), Clock (CLK) and Snooze Enable (ZZ). The HIGH input of ZZ pin puts the SRAM in the power-down state.The Linear Burst order (LBO#) is DC operated pin. LBO# pin will allow the choice of either an interleaved burst, or a linear burst.

All read, write and deselect cycles are initiated by the ADV LOW input. Subsequent burst address can be internally generated as controlled by the ADV HIGH input.

Package

165(11x15) bump BGA Body Size (13mm x 15mm) Bump Pitch 1.0mm

PART NAME TABLE

Part Name Frequency Access Cycle

Active Current

(max.)

Standby Current

(max.)

250MHz 2.6ns 4.0ns 400mA 20mA

225MHz 2.8ns 4.4ns 380mA 20mA

200MHz 3.2ns 5.0ns 360mA 20mA

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Advanced Information

M5M5T5636UG REV.0.2

BUMP LAYOUT(TOP VIEW)

1 2 3 4 5 6 7 8 9 10 11

A NC A7 E1# BWc# BWb# E3# CKE# ADV A17 A8 NC

B NC A6 E2 BWd# BWa# CLK W# G# A18 A9 NC

C DQPc NC VDDQ VSS VSS VSS VSS VSS VDDQ NC DQPb

D DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb

E DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb

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M5M5T5636UG – 25,22,20

18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

165bump-BGA

F DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb

G DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb

H MCH MCH NC VDD VSS VSS VSS VDD NC NC ZZ

J DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa

K DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa

L DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa

M DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa

N DQPd NC VDDQ VSS NC NC MCH VSS VDDQ NC DQPa

P NC NC A5 A3 TDI A1 TDO A15 A13 A11 NC

R LBO# NC A4 A2 TMS A0 TCK A16 A14 A12 A10

Note1. MCH means "Must Connect High". MCH should be connected to HIGH.

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Advanced Information

M5M5T5636UG REV.0.2

BLOCK DIAGRAM

DQa

LBO#

DQPa

DQb

DQPb

DQc

DQPc

DQd

DQPdA0A1

A2~18

CLK

CKE#ZZE2

E1#

E3#G#BWa#

BWb#

BWc#

BWd#

ADVW#VDD

VDDQ

VSS

MITSUBISHI LSIs

M5M5T5636UG – 25,22,20

18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

ADDRESS REGISTER

WRITE ADDRESS

REGISTER1

19 17

LINEAR/

INTERLEAVED

BURST

COUNTER

WRITE ADDRESS

REGISTER2

WRITE REGISTRY

AND

DATA COHERENCY

CONTROL LOGIC

A1'

A0'

BYTE1 WRITE

DRIVERS

BYTE2 WRITE

DRIVERS

BYTE3 WRITE

DRIVERS

BYTE4 WRITE

DRIVERS

256Kx36

MEMORY

ARRAY

INPUT

REGISTER1

OUTPUT REGISTERS

OUTPUT SELECT

INPUT

REGISTER0

OUTPUT BUFFERS

READ LOGIC

Note2. The BLOCK DIAGRAM does not include the Boundary Scan logic. See Boundary Scan chapter. Note3. The BLOCK DIAGRAM illustrates simplified device operation. See TRUTH TABLE, PIN FUNCTION

and timing diagrams for detailed information.

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Advanced Information

M5M5T5636UG REV.0.2

PIN FUNCTION

DQa,DQPa,DQb,DQPb

DQc,DQPc,DQd,DQPd

Pin Name Function

A0~A18

BWa#, BWb#,

BWc#, BWd#

CLK Clock Input

E1#

Synchronous Address Inputs

Synchronous Byte Write Enables

Synchronous Chip Enable

MITSUBISHI LSIs

M5M5T5636UG – 25,22,20

18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

These inputs are registered and must meet the setup and hold times around the rising edge of CLK. A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.

These active LOW inputs allow individual bytes to be written when a WRITE cycle is active and must meet the setup and hold times around the rising edge of CLK. BYTE WRITEs need to be asserted on the same cycle as the address. BWs are associated with addresses and apply to subsequent data. BWa# controls DQa, DQPa pins; BWb# controls DQb, DQPb pins; BWc# controls DQc, DQPc pins; BWd# controls DQd, DQPd pins.

This signal registers the address, data, chip enables, byte write enables and burst control inputs on its rising edge. All synchronous inputs must meet setup and hold times around the clock's rising edge.

This active LOW input is used to enable the device and is sampled only when a new external address is loaded (ADV is LOW).

E3#

Synchronous Chip Enable

This active High input is used to enable the device and is sampled only when a new external address is loaded (ADV is LOW). This input can be used for memory depth expansion.

This active Low input is used to enable the device and is sampled only when a new external address is loaded (ADV is LOW). This input can be used for memory depth expansion.

G# Output Enable This active LOW asynchronous input enable the data I/O output drivers.

ADV

CKE#

LBO#

Synchronous Address Advance/Load

Synchronous Clock Enable

Snooze Enable

Synchronous Read/Write

Synchronous Data I/O

Burst Mode Control

When HIGH, this input is used to advance the internal burst counter, controlling burst access after the external address is loaded. When HIGH, W# is ignored. A LOW on this pin permits a new address to be loaded at CLK rising edge.

This active LOW input permits CLK to propagate throughout the device. When HIGH, the device ignores the CLK input and effectively internally extends the previous CLK cycle. This input must meet setup and hold times around the rising edge of CLK.

This active HIGH asynchronous input causes the device to enter a low-power standby mode in which all data in the memory array is retained. When active, all other inputs are ignored. When this pin is LOW or NC, the SRAM normally operates.

This active input determines the cycle type when ADV is LOW. This is the only means for determining READs and WRITEs. READ cycles may not be converted into WRITEs (and vice versa) other than by loading a new address. A LOW on the pin permits BYTE WRITE operations and must meet the setup and hold times around the rising edge of CLK. Full bus width WRITEs occur if all byte write enables are LOW.

Byte “a” is DQa , DQPa pins; Byte “b” is DQb, DQPb pins; Byte “c” is DQc, DQPc pins; Byte “d” is DQd,DQPd pins. Input data must meet setup and hold times around CLK rising edge.

This DC operated pin allows the choice of either an interleaved burst or a linear burst. If this pin is HIGH or NC, an interleaved burst occurs. When this pin is LOW, a linear burst occurs, and input leak current to this pin.

VDD VDD Core Power Supply VSS VSS Ground

VDDQ VDDQ I/O buffer Power supply

TDI Test Data Input TDO Test Data Output TCK Test Clock

These pins are used for Boundary Scan Test.

TMS Test Mode Select

MCH Must Connect High These pins should be connected to HIGH

NC No Connect These pins are not internally connected and may be connected to ground.

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Advanced Information

M5M5T5636UG REV.0.2

M5M5T5636UG – 25,22,20

18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

DC OPERATED TRUTH TABLE

Name Input Status Operation

LBO#

Note4. LBO# is DC operated pin. Note5. NC means No Connection. Note6. See BURST SEQUENCE TABLE about interleaved and Linear Burst Sequence.

BURST SEQUENCE TABLE Interleaved Burst Sequence (when LBO# = HIGH or NC)

First access, latch external address A18~A2 0 , 0 Second access(first burst address) latched A18~A2 0 , 1 Third access(second burst address) latched A18~A2 1 , 0 Fourth access(third burst address) latched A18~A2 1 , 1

Linear Burst Sequence (when LBO# = LOW)

Operation A18~A2 A1,A0

First access, latch external address A18~A2 0 , 0 0 , 1 1 , 0 1 , 1 Second access(first burst address) latched A18~A2 0 , 1 1 , 0 1 , 1 0 , 0 Third access(second burst address) latched A18~A2 1 , 0 1 , 1 0 , 0 0 , 1 Fourth access(third burst address) latched A18~A2 1 , 1 0 , 0 0 , 1 1 , 0

Note7. The burst sequence wraps around to its initial state upon completion.

HIGH or NC Interleaved Burst Sequence

LOW Linear Burst Sequence

Operation A18~A2 A1,A0

0 , 1 1 , 0 0 , 0 1 , 1 1 , 1 0 , 0 1 , 0 0 , 1

1 , 1 1 , 0 0 , 1 0 , 0

TRUTH TABLE

E1# E2 E3# ZZ ADV W# BWx# G# CKE# CLK DQ

H X X L L X X X L L->H High-Z None Deselect Cycle

X L X L L X X X L L->H High-Z None Deselect Cycle X X H L L X X X L L->H High-Z None Deselect Cycle X X X L H X X X L L->H High-Z None Continue Deselect Cycle L H L L L H X L L L->H Q External Read Cycle, Begin Burst X X X L H X X L L L->H Q Next Read Cycle, Continue Burst L H L L L H X H L L->H High-Z External NOP/Dummy Read, Begin Burst X X X L H X X H L L->H High-Z Next Dummy Read, Continue Burst L H L L L L L X L L->H D External Write Cycle, Begin Burst X X X L H X L X L L->H D Next Write Cycle, Continue Burst L H L L L L H X L L->H High-Z None NOP/Write Abort, Begin Burst X X X L H X H X L L->H High-Z Next Write Abort, Continue Burst X X X L X X X X H L->H - Current Ignore Clock edge, Stall X X X H X X X X X X High-Z None Snooze Mode

Note8. X means "don't care". H means logic HIGH. L means logic LOW. Note9. BWx#=H means all Synchronous Byte Write Enables (BWa#,BWb#,BWc#,BWd#) are HIGH. BWx#=L means one or more

Synchronous Byte Write Enables are LOW.

Note10. All inputs except G# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.

Address

used

Operation

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Advanced Information

M5M5T5636UG REV.0.2

STATE DIAGRAM

Burst

MITSUBISHI LSIs

M5M5T5636UG – 25,22,20

18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

F , L , X

Deselect

T , L , H

X , H , X

F , L , X

T , L , H

Continue

Key

Read

Begin

Read

T , L , H

X , H , X

T , L , L

X , H , X

T , L , L

T , L , H

Input Command Code

T , L , L

F , L , X

Write

Begin

X , H , X T , L , L

Write

Continue

T , L , L

X , H , X

Transition

Next StateCurrent State

Note11. The notation "x , x , x" controlling the state transitions above indicate the state of inputs E, ADV and W# respectively. Note12. If (E1# = L and E2 = H and E3# = L) then E="T" else E="F". Note13. "H" = input "high"; "L" = input "low"; "X" = input "don't care"; "T" = input "true"; "F" = input "false".

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Advanced Information

M5M5T5636UG REV.0.2

M5M5T5636UG – 25,22,20

18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

WRITE TRUTH TABLE

W# BWa# BWb# BWc# BWd# Function

H X X X X Read

L L H H H Write Byte a L H L H H Write Byte b L H H L H Write Byte c L H H H L Write Byte d L L L L L Write All Bytes L H H H H Write Abort/NOP

Note14.X means "don't care". H means logic HIGH. L means logic LOW. Note15. All inputs except G# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Conditions Ratings Unit

VDD Power Supply Voltage -1.0*~3.6 V VDDQ I/O Buffer Power Supply Voltage -1.0*~3.6 V VI Input Voltage -1.0~VDDQ+1.0** V VO Output Voltage PD Maximum Power Dissipation (VDD) 1050 mW TOPR Operating Temperature 0~70 °C TSTG(bias) Storage Temperature(bias) -10~85 °C TSTG Storage Temperature -65~150 °C

Note16.* This is –1.0V when pulse width≤2ns, and –0.5V in case of DC. ** This is –1.0V~VDDQ+1.0V when pulse width≤2ns, and –0.5V~VDDQ+0.5V in case of DC.

With respect to VSS

-1.0~VDDQ+1.0** V

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