MITSUBISHI M54583P, M54583FP User Manual

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54583P/FP

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

DESCRIPTION

M54583P and M54583FP are eight-circuit collector-current­synchronized Darlington transistor arrays. The circuits are
made of PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with ex­tremely low input-current supply.

FEATURES

●

High breakdown voltage (BVCEO ≥ 50V)

●

High-current driving (Ic(max) = 400mA)

●

Active L-level input

●

With input clamping diodes

APPLICATION

Interfaces between microcomputers and high-voltage, high­current drive systems, drives of relays and printers, and
MOS-bipolar logic IC interfaces

FUNCTION

The M54583 is produced by adding PNP transistors to
M54523 inputs. Eight circuits having active L-level inputs are
provided.
Resistance of 7kΩ and diode are provided in series between
each input and PNP transistor base. The input diode is in­tended to prevent the flow of current from the input to the
V

CC. Without this diode, the current flow from “H” input to the

V

CC and the “L” input circuits is activated, in such case where

one of the inputs of the 8 circuits is “H” and the others are “L”
to save power consumption. The diode is inserted to prevent
such misoperation.
This device is most suitable for a driver using NMOS IC out­put especially for the driver of current sink.
Collector current is 400mA maximum. Collector-emitter sup­ply voltage is 50V.
The 54583FP is enclosed in a molded small flat package,
enabling space saving design.

PIN CONFIGURATION (TOP VIEW)

M54583P

1IN1→

2

IN2→

3

IN3→

4

INPUT OUTPUT

IN4→

IN5→

IN6→

IN7→

IN8→

GND

5

6

7

8

9

→O1

18

→O2

17

→O3

16

→O4

15

→O5

14

→O6

13

→O7

12

→O8

11

CC

V

10

Outline 18P4G

M54583FP

INPUT

IN1→

IN2→

IN3→

IN4→

IN5→

IN6→

IN7→

IN8→

GND

1NC

2

3

4

5

6

7

8

9

10 11

20

NC

→O1

19

→O2

18

→O3

17

→O4

16

→O5

15

→O6

14

→O7

13

→O8

12

V

CC

Outline 20P2N-A

NC : No connection

CIRCUIT DIAGRAM (EACH CIRCUIT)

7k

INPUT

7k

2.7k

7.2k

OUTPUT

3k

CC

V

OUTPUT

GND

The eight circuits share the V

The diode, indicated with the dotted line, is parasitic, and cannot
be used.

CC

and GND.

Unit : Ω

May 2007

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)

CC

V

VCEO

VI

IC

Pd

Topr

Tstg

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol

CC

V

IC

VIH

VIL

Supply voltage

Collector-emitter voltage

Input voltage

Collector current

Power dissipation

Operating temperature

Storage temperature

Parameter

Supply voltage

CC = 5V, Duty Cycle

V
P : no more than 10%

Collector current
Per channel

FP : no more than 5%
V

CC = 5V, Duty Cycle

P : no more than 34%
FP : no more than 15%

“H” input voltage

“L” input voltage

Output, H

Current per circuit output, L

Ta = 25°C, when mounted on board

Limits

min typ max

4

0

5

—

Unit

8

350

mA

200

V

CC

VCC–3.6

V

CC–0.7

0

—

—

0

—

V

V

V

M54583P/FP

Ratings

10

–0.5 ~ +50

–0.5 ~ VCC

400

1.79/1.1

–20 ~ +75

–55 ~ +125

UnitSymbol Parameter Conditions

V

V

V

mA

W

°C

°C

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

CE (sat)

V

II

ICC

hFE

+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any

conditions.

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Input current

Supply current (one circuit coming on)

DC amplification factor

ICEO = 100µA, VCC = 8V

VI = VCC–3.6V

IC = 350mA

IC = 200mA
VI = VCC–3.6V

VCC = 5V, VI = VCC–3.6V

VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25°C

min typ

2000

Limits

+

max

1.2

1.9

—

2.2

1.6

–600

—

V

V

µA

3

mA

—

50

—

—

—

—

0.98

–320

—

3500

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

ton

toff

NOTE 1 TEST CIRCUIT

Turn-on time

Turn-off time

V

INPUT

PG

50Ω C

CC

Measured
device

CL = 15pF (note 1)

V

O

R

L

OUTPUT

L

TIMING DIAGRAM

INPUT

OUTPUT

min typ max

50% 50%

50% 50%

Limits

—

—

130

3200

—

—

ns

ns

(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z

I

= 0.4 to 4V

V
(2) Input-output conditions : R
(3) Electrostatic capacity C
connections and input capacitance at probes

O

= 50Ω

L

= 30Ω, VO = 10V, VCC = 4V

L

includes floating capacitance at

ton

toff

May 2007

2