MITSUBISHI M54583P, M54583FP User Manual

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54583P/FP

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

DESCRIPTION

M54583P and M54583FP are eight-circuit collector-current­synchronized Darlington transistor arrays. The circuits are
made of PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with ex­tremely low input-current supply.

FEATURES

●

High breakdown voltage (BVCEO ≥ 50V)

●

High-current driving (Ic(max) = 400mA)

●

Active L-level input

●

With input clamping diodes

APPLICATION

Interfaces between microcomputers and high-voltage, high­current drive systems, drives of relays and printers, and
MOS-bipolar logic IC interfaces

FUNCTION

The M54583 is produced by adding PNP transistors to
M54523 inputs. Eight circuits having active L-level inputs are
provided.
Resistance of 7kΩ and diode are provided in series between
each input and PNP transistor base. The input diode is in­tended to prevent the flow of current from the input to the
V

CC. Without this diode, the current flow from “H” input to the

V

CC and the “L” input circuits is activated, in such case where

one of the inputs of the 8 circuits is “H” and the others are “L”
to save power consumption. The diode is inserted to prevent
such misoperation.
This device is most suitable for a driver using NMOS IC out­put especially for the driver of current sink.
Collector current is 400mA maximum. Collector-emitter sup­ply voltage is 50V.
The 54583FP is enclosed in a molded small flat package,
enabling space saving design.

PIN CONFIGURATION (TOP VIEW)

M54583P

1IN1→

2

IN2→

3

IN3→

4

INPUT OUTPUT

IN4→

IN5→

IN6→

IN7→

IN8→

GND

5

6

7

8

9

→O1

18

→O2

17

→O3

16

→O4

15

→O5

14

→O6

13

→O7

12

→O8

11

CC

V

10

Outline 18P4G

M54583FP

INPUT

IN1→

IN2→

IN3→

IN4→

IN5→

IN6→

IN7→

IN8→

GND

1NC

2

3

4

5

6

7

8

9

10 11

20

NC

→O1

19

→O2

18

→O3

17

→O4

16

→O5

15

→O6

14

→O7

13

→O8

12

V

CC

Outline 20P2N-A

NC : No connection

CIRCUIT DIAGRAM (EACH CIRCUIT)

7k

INPUT

7k

2.7k

7.2k

OUTPUT

3k

CC

V

OUTPUT

GND

The eight circuits share the V

The diode, indicated with the dotted line, is parasitic, and cannot
be used.

CC

and GND.

Unit : Ω

May 2007

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)

CC

V

VCEO

VI

IC

Pd

Topr

Tstg

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol

CC

V

IC

VIH

VIL

Supply voltage

Collector-emitter voltage

Input voltage

Collector current

Power dissipation

Operating temperature

Storage temperature

Parameter

Supply voltage

CC = 5V, Duty Cycle

V
P : no more than 10%

Collector current
Per channel

FP : no more than 5%
V

CC = 5V, Duty Cycle

P : no more than 34%
FP : no more than 15%

“H” input voltage

“L” input voltage

Output, H

Current per circuit output, L

Ta = 25°C, when mounted on board

Limits

min typ max

4

0

5

—

Unit

8

350

mA

200

V

CC

VCC–3.6

V

CC–0.7

0

—

—

0

—

V

V

V

M54583P/FP

Ratings

10

–0.5 ~ +50

–0.5 ~ VCC

400

1.79/1.1

–20 ~ +75

–55 ~ +125

UnitSymbol Parameter Conditions

V

V

V

mA

W

°C

°C

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

CE (sat)

V

II

ICC

hFE

+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any

conditions.

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Input current

Supply current (one circuit coming on)

DC amplification factor

ICEO = 100µA, VCC = 8V

VI = VCC–3.6V

IC = 350mA

IC = 200mA
VI = VCC–3.6V

VCC = 5V, VI = VCC–3.6V

VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25°C

min typ

2000

Limits

+

max

1.2

1.9

—

2.2

1.6

–600

—

V

V

µA

3

mA

—

50

—

—

—

—

0.98

–320

—

3500

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

ton

toff

NOTE 1 TEST CIRCUIT

Turn-on time

Turn-off time

V

INPUT

PG

50Ω C

CC

Measured
device

CL = 15pF (note 1)

V

O

R

L

OUTPUT

L

TIMING DIAGRAM

INPUT

OUTPUT

min typ max

50% 50%

50% 50%

Limits

—

—

130

3200

—

—

ns

ns

(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z

I

= 0.4 to 4V

V
(2) Input-output conditions : R
(3) Electrostatic capacity C
connections and input capacitance at probes

O

= 50Ω

L

= 30Ω, VO = 10V, VCC = 4V

L

includes floating capacitance at

ton

toff

May 2007

2

TYPICAL CHARACTERISTICS

Thermal Derating Factor Characteristics

2.0

M54583P

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54583P/FP

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

Output Saturation Voltage

Collector Current Characteristics

500

1.5

M54583FP

1.0

0.5

Power dissipation Pd (W)

0

0

25 50 75 100

Ambient temperature Ta (°C)

Duty-Cycle-Collector Characteristics

(M54583P)

500

400

300

200

•The collector current values
represent the current per circuit.

Collector current Ic (mA)

•Repeated frequency ≥ 10Hz

100

•The value in the circle represents the
value of the simultaneously-operated circuit.

CC

= 5V

•V

•Ta = 25°C

0

020406080100

1
2

3
4

5
6

8

7

400

300

200

Collector current Ic (mA)

100

0

0 2.00.5 1.0 1.5

VI = 1.4V

CC

V

Output saturation voltage V

Duty-Cycle-Collector Characteristics

(M54583P)

500

400

300

200

•The collector current values

Collector current Ic (mA)

represent the current per circuit.

100

•Repeated frequency

•The value in the circle represents the
value of the simultaneously-operated circuit.

CC

= 5V •Ta = 75°C

•V

0

020406080100

≥

10Hz

= 5V

Ta = 75°C

Ta = 75°C
Ta = 25°C

Ta = 25°C
Ta = –20°C

Ta = –20°C

CE

(sat) (V)

1

2

3
4

5
7

6
8

Duty cycle (%)

Duty-Cycle-Collector Characteristics

(M54583FP)

500

400

300

200

•The collector current values
represent the current per circuit.

Collector current Ic (mA)

100

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•V

CC

= 5V •Ta = 25°C

0

020406080100

Duty cycle (%)

1

2

3
4

5

6
7
8

Duty-Cycle-Collector Characteristics

500

400

300

200

Collector current Ic (mA)

•The collector current values

100

represent the current per circuit.

•Repeated frequency

•The value in the circle represents the
value of the simultaneously-operated circuit.

0

020406080100

3

Duty cycle (%)

(M54583FP)

≥

10Hz

Duty cycle (%)

•Vcc =5.0V

•Ta = 75°C

1

2
3

4

5
6
7
8

May 2007

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54583P/FP

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

Input Characteristics

–1.0

–0.8

VCC = 5V

Ta = 75°C

(mA)

I

–0.6

Ta = 75°C
Ta = 25°C

Ta = 25°C
Ta = –20°C

Ta = –20°C

–0.4

Input current I

–0.2

0

012345

Supply voltage-Input voltage V

Grounded Emitter Transfer Characteristics

400

VCC = 4V

CE

= 4V

V

300

Ta = 75°C
Ta = 25°C
Ta = –20°C

200

CC–VI

(V)

DC Amplification Factor

Collector Current Characteristics

4

10

7

5

FE

3

3

10

7

5

3

DC amplification factor h

2

10

1

10

357

Collector current Ic (mA)

Supply Current Characteristics

5

VI = 0V

Ta = 75°C

4

Ta = 75°C
Ta = 25°C

Ta = 25°C
Ta = –20°C

Ta = –20°C

3

2

10

VCC = 5V

CE

V

2

= 4V

Ta = 75°C

Ta = 75°C
Ta = 25°C

Ta = 25°C
Ta = –20°C

Ta = –20°C

357

10

3

100

Collector current Ic (mA)

0

0

01234

Supply voltage-Input voltage V

CC–VI

(V)

Supply current Icc (mA)

1

0

0246810

Supply voltage V

CC

(V)

May 2007

4