MITSUBISHI M54580P, M54580FP User Manual

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54580P/FP

7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY

DESCRIPTION

M54580P and M54580FP are seven-circuit output-sourcing
Darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated cir­cuits perform high-current driving with extremely low input­current supply.

FEATURES

Á High breakdown voltage (BV

CEO ≥ 50V)

Á High-current driving (Io(max) = –150mA)
Á Active L-level input
Á With input diodes
Á Wide operating temperature range (Ta = –20 to +75°C)

APPLICATION

Drives of relays, printers and indication elements such as
LEDs, fluorescent display tubes and lamps, and interfaces
between MOS-bipolar logic systems and relays, solenoids,
or small motors

PIN CONFIGURATION










INPUT OUTPUT









IN2→
IN3→
IN4→
IN5→
IN6→
IN7→

GND

1IN1→
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

16P4(P)

Package type 16P2N-A(FP)

CIRCUIT DIAGRAM

30K

INPUT

7K

7K

50K

→O1
→O2
→O3
→O4
→O5
→O6
→O7

V

















S

S

V

OUTPUT

FUNCTION

The M54580P and M54580FP each have seven circuits,
which are made of output current-sourcing Darlington tran­sistors consisting of PNP and NPN transistors. Each PNP

The diode, indicated with the dotted line, is parasitic, and cannot
be used.

transistor has a diode and resistance of 7kΩ between the
base and input pin. Its emitter and NPN transistor collectors
are connected to the V

S pin (pin 9). Resistance of 50kΩ is

connected between each output pin and GND pin (pin 8).
Output current is 150mA maximum. Supply voltage V

S is 50V

maximum.
The M54580FP is enclosed in a molded small flat package,
enabling space-saving design.

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)

VCEO
VS
VI
IO
Pd
Topr
Tstg

Collector-emitter voltage
Supply voltage
Input voltage
Output current
Power dissipation
Operating temperature
Storage temperature

Output, L

Current per circuit output, H
Ta = 25°C, when mounted on board

The seven circuits share the V

–0.5 ~ +50

1.47(P)/1.00(FP)

–55 ~ +125

S

and GND.

Ratings UnitSymbol Parameter Conditions

50

–0.5 ~ V

–150

–20 ~ +75

GND

Unit : Ω

V
V

S

V

mA

W

°C
°C

Aug. 1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54580P/FP

7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol Unit

VS

Supply voltage
Output current

(Current per 1 cir-

IO

cuit when 7 circuits
are coming on si-

multaneously)
VIH
VIL

“H” input voltage

“L” input voltage

Parameter

Duty Cycle
P : no more than 85%
FP : no more than 50%

Duty Cycle
P : no more than 100%
FP : no more than 100%

min typ max

V

S–0.4

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

CE (sat)

V

II
IR

hFE

+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any

conditions.

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Input current

Clamping diode reverse current

DC amplification factor

ICEO = 100µA

I = VS–3.2V, IO = –100mA

V

I = VS–3.2V, IO = –50mA

V

I = VS–3.5V

V

I = VS–6V

V

I = 40V

V

CE = 4V, VS = 10V, IC = –100mA, Ta = 25°C

V

Limits

4
0

—
——–100

50

V

mA

0

—

0

—

–50

S

V

VS–3.2

V
V

Limits

+

0.9

0.8

max

—

1.5

1.2

–0.6

–0.95

100
—

V
V

mA

µA
—

min typ

50
—
—
—
—

–0.65

—

800

3000

—

–0.3

—

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

ton
toff

Turn-on time
Turn-off time

CL = 15pF (note 1)

TIMING DIAGRAMNOTE 1 TEST CIRCUIT

V

INPUT

PG

50Ω C

(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z

I

= 0.8 to 4V

V
(2) Input-output conditions : R
(3) Electrostatic capacity C
connections and input capacitance at probes

S

Measured device

L

R

L

O

= 50Ω

L

= 40Ω, , VS = 4V

L

includes floating capacitance at

INPUT

OUTPUT

OUTPUT

Limits

min typ max

—
—

50% 50%

50% 50%

ton

200

7500

toff

—
—

ns
ns

Aug. 1999

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54580P/FP

7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY

Thermal Derating Factor Characteristics

2.0

M54580P

1.5

M54580FP

1.0

0.5

Power dissipation Pd (W)

0

0

25 50 75 100

Ambient temperature Ta (°C)

Duty-Cycle-Output Current Characteristics

(M54580P)

–200

–160

(mA)

O

–120

–80

•The output current values
represent the current per circuit.

Output current I

–40

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 25°C

0

0

20 40 60 80 100

➀ to ➄
➅
➆

Output Saturation Voltage

Output Current Characteristics

–200

VS = 10V

I

= 6.8V

V

–150

(mA)

O

–100

Ta = 75°C

–50

Output current I

0

0

0.5 1.0 1.5 2.0

Ta = 25°C

Ta = –20°C

Output saturation voltage V

Duty-Cycle-Output Current Characteristics

(M54580P)

–200

–160

(mA)

O

–120

–80

•The output current values
represent the current per circuit.

Output current I

–40

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 75°C

0

0

20 40 60 80 100

CE

(sat) (V)

➀ to ➂
➃

➄
➅

➆

Duty cycle (%)

Duty-Cycle-Output Current Characteristics

(M54580FP)

–200

–160

(mA)

O

–120

–80

•The output current values
represent the current per circuit.

Output current I

•Repeated frequency ≥ 10Hz

–40

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 25°C

0

0

20 40 60 80 100

Duty cycle (%)



➀ to ➂
➃

➄
➅

➆

Duty cycle (%)

Duty-Cycle-Output Current Characteristics

(M54580FP)

–200

–160

(mA)

O

–120

–80

•The output current values
represent the current per circuit.

Output current I

•Repeated frequency ≥ 10Hz

–40

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 75°C

0020 40 60 80 100

Duty cycle (%)

➀ to ➁
➂

➃
➄

➅
➆

Aug. 1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54580P/FP

7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY

Grounded Emitter Transfer Characteristics

–200

VS = 10V

CE

= 4V

V

–150

(mA)

O

Ta = 75°C

–100

–50

Output current I

0

0

1.0 2.0 3.0 4.0

Ta = 25°C

Ta = –20°C

Supply voltage-Input voltage V

Input Characteristics

–5

VS = 20V

–4

(mA)

I

–3

Ta = –20°C
Ta = 25°C

–2

S–VI

(V)

DC Amplification Factor

Output Current Characteristics

4

10

VS = 10V

7

CE

V

5

FE

3
2

3

10

7
5

3

DC amplification factor h

2

2

10

1

10

Ta = 75°C

= 4V

23 57 23 57

Output current I

10

2

Ta = –20°C

O

(mA)

Ta = 25°C

10

3

Input current I

–1

0

0

5 101520

Supply voltage-Input voltage V

Ta = 75°C

S–VI

(V)

Aug. 1999