MITSUBISHI M54580P, M54580FP User Manual
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54580P/FP
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54580P and M54580FP are seven-circuit output-sourcing
Darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
FEATURES
Á High breakdown voltage (BV
CEO ≥ 50V)
Á High-current driving (Io(max) = –150mA)
Á Active L-level input
Á With input diodes
Á Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays, printers and indication elements such as
LEDs, fluorescent display tubes and lamps, and interfaces
between MOS-bipolar logic systems and relays, solenoids,
or small motors
PIN CONFIGURATION
INPUT OUTPUT
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
GND
1IN1→
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
30K
INPUT
7K
7K
50K
→O1
→O2
→O3
→O4
→O5
→O6
→O7
V
S
S
V
OUTPUT
FUNCTION
The M54580P and M54580FP each have seven circuits,
which are made of output current-sourcing Darlington transistors consisting of PNP and NPN transistors. Each PNP
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
transistor has a diode and resistance of 7kΩ between the
base and input pin. Its emitter and NPN transistor collectors
are connected to the V
S pin (pin 9). Resistance of 50kΩ is
connected between each output pin and GND pin (pin 8).
Output current is 150mA maximum. Supply voltage V
S is 50V
maximum.
The M54580FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
VCEO
VS
VI
IO
Pd
Topr
Tstg
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Power dissipation
Operating temperature
Storage temperature
Output, L
Current per circuit output, H
Ta = 25°C, when mounted on board
The seven circuits share the V
–0.5 ~ +50
1.47(P)/1.00(FP)
–55 ~ +125
S
and GND.
Ratings UnitSymbol Parameter Conditions
50
–0.5 ~ V
–150
–20 ~ +75
GND
Unit : Ω
V
V
S
V
mA
W
°C
°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54580P/FP
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol Unit
VS
Supply voltage
Output current
(Current per 1 cir-
IO
cuit when 7 circuits
are coming on si-
multaneously)
VIH
VIL
“H” input voltage
“L” input voltage
Parameter
Duty Cycle
P : no more than 85%
FP : no more than 50%
Duty Cycle
P : no more than 100%
FP : no more than 100%
min typ max
V
S–0.4
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
CE (sat)
V
II
IR
hFE
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode reverse current
DC amplification factor
ICEO = 100µA
I = VS–3.2V, IO = –100mA
V
I = VS–3.2V, IO = –50mA
V
I = VS–3.5V
V
I = VS–6V
V
I = 40V
V
CE = 4V, VS = 10V, IC = –100mA, Ta = 25°C
V
Limits
4
0
—
——–100
50
V
mA
0
—
0
—
–50
S
V
VS–3.2
V
V
Limits
+
0.9
0.8
max
—
1.5
1.2
–0.6
–0.95
100
—
V
V
mA
µA
—
min typ
50
—
—
—
—
–0.65
—
800
3000
—
–0.3
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
ton
toff
Turn-on time
Turn-off time
CL = 15pF (note 1)
TIMING DIAGRAMNOTE 1 TEST CIRCUIT
V
INPUT
PG
50Ω C
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
I
= 0.8 to 4V
V
(2) Input-output conditions : R
(3) Electrostatic capacity C
connections and input capacitance at probes
S
Measured device
L
R
L
O
= 50Ω
L
= 40Ω, , VS = 4V
L
includes floating capacitance at
INPUT
OUTPUT
OUTPUT
Limits
min typ max
—
—
50% 50%
50% 50%
ton
200
7500
toff
—
—
ns
ns
Aug. 1999
Loading...