MITSUBISHI M54566P, M54566FP User Manual
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are
made of PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with extremely low input-current supply.
FEATURES
Á High breakdown voltage (BV
CEO ≥ 50V)
Á High-current driving (Ic(max) = 400mA)
Á Active L-level input
Á Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and printers, and
MOS-bipolar logic IC interfaces
FUNCTION
The M54566 is produced by adding PNP transistors to
M54222 inputs. Seven circuits having active L-level inputs
are provided.
Resistance of 8kΩ is provided between each input and PNP
transistor base. The input emitters are connected to V
CC pin
(pin 9). Output transistor emitters are all connected to the
GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter supply voltage is 50V maximum.
These ICs are optimal for drivers that are driven with N-MOS
IC output and absorb collector current.
The M54566FP is enclosed in a molded small flat package,
enabling space-saving design.
PIN CONFIGURATION
→O1
→O2
→O3
→O4
→O5
→O6
→O7
V
CC
OUTPUT
INPUT
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
GND
1IN1→
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
20K
INPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
8K
The seven circuits share the V
2.7K
7.2K
3K
CC
OUTPUT
and GND.
CC
V
GND
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
CC
V
VCEO
IC
VI
Pd
Topr
Tstg
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings UnitSymbol Parameter Conditions
10
–0.5 ~ +50
400
CC
–0.5 ~ V
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
V
V
mA
V
W
°C
°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol Unit
VCC
VO
Supply voltage
Output voltage
Collector current
(Current per 1 cir-
IC
cuit when 7 circuits
are coming on si-
multaneously)
VIH
VIL
“H” input voltage
“L” input voltage
Parameter
CC = 5V, Duty Cycle
V
P : no more than 10%
FP : no more than 6%
V
CC = 5V, Duty Cycle
P : no more than 30%
FP : no more than 20%
min typ max
CC–0.2
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
V
CE (sat)
II
ICC
hFE
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Supply current (one circuit coming on)
DC amplification factor
ICEO = 100µA
I = VCC–3V, IC = 350mA
V
I = VCC–3V, IC = 200mA
V
I = VCC–3.5V
V
CC = 5V, VI = VCC–3.5V
V
CE = 4V, VCC = 5V, IC = 350mA, Ta = 25°C
V
Limits
50
V
8
V
4
0
0
5
—
—
350
mA
0
0
—
—
—
200
CC
V
VCC–3
V
V
Limits
+
1.1
0.9
1.4
max
—
2.2
1.6
–0.58
3.0
—
V
V
mA
mA
—
min typ
50
—
—
—
—
2000
10000
—
–0.38
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
ton
toff
Turn-on time
Turn-off time
CL = 15pF (note 1)
TIMING DIAGRAMNOTE 1 TEST CIRCUIT
V
INPUT
PG
50Ω C
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
V
I
= 1 to 4V
(2) Input-output conditions : R
(3) Electrostatic capacity C
connections and input capacitance at probes
CC
Measured
device
O
L
= 30Ω, VO = 10V, VCC = 4V
L
includes floating capacitance at
= 50Ω
V
O
R
L
OUTPUT
L
INPUT
OUTPUT
Limits
min typ max
—
—
50% 50%
50% 50%
ton
95
2500
toff
ns
—
ns
—
Aug. 1999
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