MITSUBISHI M54561P User Manual
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54561P
7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
FEATURES
● High breakdown voltage (BVCEO ≥ 40V)
● High-current driving (Io(max) = –300mA)
● With output clamping diodes
● Active “L” input
● Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors
PIN CONFIGURATION (TOP VIEW)
INPUTS
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
S
1IN1→
2
3
4
5
6
7
8
16
→O1
15
→O2
14
→O3
13
→O4
12
→O5
11
→O6
10
→O7
9
Outline 16P4
CIRCUIT SCHEMATIC
27k
INPUT
20k
SUBV
OUTPUTS
V
S
FUNCTION
The M54561P have seven circuits of current-sourcing outputs. Darlington transistor, which are made of PNP transistor and NPN transistor. Resistance of 20kΩ is connected between PNP transistor base and input pin. PNP transistor
emitters and NPN transistor collector is connected V
S (pin 8),
* SUB must be the lowest voltage in a circuit.
The seven circuits share the VS and SUB.
The diodes shown by broken line are parasite diodes and must
not be used.
and spike killer clamping diode is provided between each
output pins.
Output currene is 300mA maximum and supply voltage V
S is
40V maximum operate Active “L” input.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
V
VS
VI
IO
IF
VR
Pd
Topr
Tstg
CEO
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, L
Current per circuit output, H
Ta = 25°C, when mounted on board
7k 3k
Ratings UnitSymbol Parameter Conditions
–0.5 ~ VS
40
–0.5 ~ V
–300
–300
40
1.47
–20 ~ +75
–55 ~ +125
OUTPUT
SUB*
Unit : Ω
V
V
S
V
mA
mA
V
W
°C
°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54561P
7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol Unit
VS
Supply voltage
Parameter
min typ max
Percent duty cycle less
IO
Output current
per channel
than 10%
Percent duty cycle less
than 50%
VIH
VIL
“H” input voltage
“L” input voltage
S–0.2
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol UnitParameter Test conditions
IS (leak)
V
CE (sat)
II Input current
VF
IR
hFE
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
Supply leak current
Collector-emitter saturation voltage
VS = 40V
V
V
V
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
I
V
V
I = VS–3V, IO = –300mA
I = VS–3V, IO = –100mA
I = VS–3.5V,
F = –300mA
R = 40V
CE = 4V, IO = –300mA, Ta =25°C
Limits
—
0
0
—
–300
40
V
mA
0
—
–100
—
0
—
S+0.3
V
V
S–3
V
V
Limits
+
min typ
—
—
—
–150
—
—
—
1000
1.65
1.45
–1.6
8000
max
—
100
µA
2.4
2.0
–250
µA
–2.4
—
100
µA
—
—
V
V
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
ton
toff
Turn-on time
Turn-off time
L = 15pF (note 1)
C
TIMING DIAGRAMNOTE 1 TEST CIRCUIT
INPUT
PG
50Ω
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
IN
= 7 to 10.3V
V
(2) Input-output conditions : R
(3) Electrostatic capacity C
connections and input capacitance at probes
V
S
Measured device
OPEN
R
L
O
= 50Ω
L
= 40Ω, VS = 10V
L
includes floating capacitance at
INPUT
OUTPUT
C
L
OUTPUT
Limits
min typ max
—
—
50%
50% 50%
ton
200
2500
50%
toff
—
—
ns
ns
Aug. 1999
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