MITSUBISHI M54531P, M54531FP User Manual

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54531P/FP

7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION

M54531P and M54531FP are seven-circuit Darlington tran­sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.

FEATURES

Á High breakdown voltage (BV

CEO ≥ 40V)

Á High-current driving (Ic(max) = 400mA)
Á With clamping diodes
Á Driving available with PMOS IC output
Á Wide input voltage range (V

I = –40 to +40V)

Á Wide operating temperature range (Ta = –20 to +75°C)

APPLICATION

Drives of relays and printers, digit drives of indication ele­ments (LEDs and lamps), and MOS-bipolar logic IC inter­faces

FUNCTION

The M54531P and M54531FP each have seven circuits con­sisting of NPN Darlington transistors. A serial circuit includ­ing a diode and resistance of 20kΩ is provided between in­put transistor bases and input pins. A spike-killer clamping
diode is provided between each output pin (collector) and
COM pin (pin 9). The output transistor emitters are all con­nected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54531FP is enclosed in a molded small flat package,
enabling space-saving design.

PIN CONFIGURATION










INPUT OUTPUT









IN2→
IN3→
IN4→
IN5→
IN6→
IN7→

GND

1IN1→
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9



→O1




→O2




→O3





→O4




→O5




→O6




→O7



→COM COMMON

16P4(P)

Package type 16P2N-A(FP)

CIRCUIT DIAGRAM

INPUT

The diode, indicated with the dotted line, is parasitic, and cannot
be used.

20K

20K

2K

The seven circuits share the COM and GND.

COM
OUTPUT

GND

Unit : Ω

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)

VCEO
IC
VI
IF
VR
Pd
Topr
Tstg

Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature

Output, H
Current per circuit output, L

Ta = 25°C, when mounted on board

RatingsSymbol Parameter Conditions Unit

–0.5 ~ +40

400

–40 ~ +40

400

40

1.47(P)/1.00(FP)
–20 ~ +75

–55 ~ +125

V

mA

V

mA

V

W

°C
°C

Aug. 1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

ton

50% 50%

50% 50%

toff

INPUT

OUTPUT

M54531P/FP

7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol Unit

VO

Output voltage
Collector current

(Current per 1 cir-

IC

cuit when 7 circuits
are coming on si-

multaneously)
VIH
VIL

“H” input voltage

“L” input voltage

Parameter

Duty Cycle
P : no more than 8%
FP : no more than 6%

Duty Cycle
P : no more than 30%
FP : no more than 25%

IC ≤ 400mA

C ≤ 200mA

I

min typ max

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

VCE (sat)

II
IIR

VF
IR
hFE

+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any

conditions.

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Input current

Input reverse current

Clamping diode forward voltage

Clamping diode reverse current

DC amplification factor

I

CEO = 100µA

I = 9V, IC = 400mA

V

I = 6V, IC = 200mA

V

I = 18V

V

I = 35V

V

I = –35V

V

F = 400mA

I

R = 40V

V

CE = 4V, IC = 300mA, Ta = 25°C

V

Limits

0
0

—
—

40

400

V

mA

0
9

6
0

—
—

—
—

200

35

V
V

1

Limits

+

1.3

1.0

1.1

2.0

1.4

max

—

2.4

1.6

1.8

3.8

–20

2.4

100

—

V
V

mA

µA

V
µA
—

min typ

40
—
—
—
—
—
—
—

1000

—

—

—

3500

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

t
toff

on

Turn-on time
Turn-off time

L = 15pF (note 1)

C

TIMING DIAGRAMNOTE 1 TEST CIRCUIT

OPEN

O

V

R

L

OUTPUT

L

INPUT

Measured device

PG

50Ω C

(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
V

P

= 9V
(2) Input-output conditions : RL = 25Ω, VO = 10V
(3) Electrostatic capacity C
connections and input capacitance at probes

P-P

O

= 50Ω

L

includes floating capacitance at

Limits

min typ max

—
—

30

680

—
—

ns
ns

Aug. 1999

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54531P/FP

7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

Thermal Derating Factor Characteristics

2.0

M54531P

1.5

M54531FP

1.0

0.5

Power dissipation Pd (W)

0

0

25 50 75 100

Ambient temperature Ta (°C)

Duty-Cycle-Collector Characteristics

500

(M54531P)

400

300

200

•The collector current values
represent the current per circuit.

Collector current Ic (mA)

100

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 25°C

0

20 40 60 80 100

0

Output Saturation Voltage

Collector Current Characteristics

400

VI = 6V

300

200

100

Collector current Ic (mA)

0

0

Ta = 75°C

0.4 0.8 1.2 1.6

Output saturation voltage V

Ta = 25°C

Ta = –20°C

CE

(sat) (V)

Duty-Cycle-Collector Characteristics

500

➀

400

(M54531P)

➀

➁

300

➂
➃

➄
➅
➆

200

•The collector current values
represent the current per circuit.

Collector current Ic (mA)

100

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 75°C

0

20 40 60 80 100

0

➁
➂

➃

➄

➅

➆

Duty cycle (%)

Duty-Cycle-Collector Characteristics

500

(M54531FP)

400

300

200

•The collector current values
represent the current per circuit.

Collector current Ic (mA)

100

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 25°C

0

20 40 60 80 100

0

Duty cycle (%)

Duty cycle (%)

Duty-Cycle-Collector Characteristics

500

➀

400

300

(M54531FP)

➀

➁
➂

➃
➄

➅

➆

200

•The collector current values

Collector current Ic (mA)

100

represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit. •Ta = 75°C

0

20 40 60 80 100

0

➁
➂

➃
➄

➅

➆

Duty cycle (%)

Aug. 1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54531P/FP

7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DC Amplification Factor

Collector Current Characteristics

4

10

VCE = 4V

7
5

FE

3
2

3

10

7
5

3

DC amplification factor h

2

2

10

1

10

23 57

Collector current Ic (mA)

Input Characteristics

2.0

1.5

(mA)

I

Ta = –20°C

1.0

Input current I

0.5

0

5 10152025

0

Ta = 75°C

2

10

Ta = 25°C

Ta = –20°C

23 57

Ta = 25°C

Ta = 75°C

10

Grounded Emitter Transfer Characteristics

400

VCE = 4V

300

200

Ta = –20°C

100

Collector current Ic (mA)

3

0

0

Ta = 75°C

Ta = 25°C

1234

Input voltage V

I

(V)

Clamping Diode Characteristics

400

(mA)

300

F

200

100

0

0

Ta = 75°C

0.5 1.0 1.5 2.0

Forward bias current I

Ta = 25°C

Ta = –20°C

Input voltage V

I

(V)

Forward bias voltage V

F

(V)

Aug. 1999