MITSUBISHI M54530P, M54530FP User Manual
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54530P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54530P and M54530FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
Á High breakdown voltage (BV
CEO ≥ 40V)
Á High-current driving (Ic(max) = 400mA)
Á With clamping diodes
Á Driving available with PMOS IC output
Á Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
PIN CONFIGURATION
INPUT OUTPUT
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
GND
1IN1→
2
3
4
5
6
7
8
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
INPUT
20K
20K
2K
16
15
14
13
12
11
10
→O1
→O2
→O3
→O4
→O5
→O6
→O7
→COM COMMON
9
COM
OUTPUT
GND
FUNCTION
The M54530P and M54530FP each have seven circuits con-
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
sisting of NPN Darlington transistors. These ICs have resistance of 20kΩ between input transistor bases and input pins.
A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor
emitters are all connected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54530FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
The seven circuits share the COM and GND.
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +40
400
–0.5 ~ +40
400
40
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Unit : Ω
V
mA
V
mA
V
W
°C
°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
M54530P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Limits
0
0
0
8
5
0
—
—
—
400
200
—
—
—
VO
IC
VIH
VIL
ParameterSymbol
Output voltage
Collector current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
“H” input voltage
“L” input voltage
Duty Cycle
P : no more than 8%
FP : no more than 6%
Duty Cycle
P : no more thn 30%
FP : no more than 25%
C ≤ 400mA
I
C ≤ 200mA
I
min typ max
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
VCE (sat)
I
I
VF
IR
hFE
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
ICEO = 100µA
I = 8V, IC = 400mA
V
I = 5V, IC = 200mA
V
I = 17V
V
I = 35V
V
F = 400mA
I
R = 40V
V
CE = 4V, IC = 300mA, Ta = 25°C
V
0.5
40
35
Unit
V
mA
V
V
Limits
min typ
40
—
—
—
—
—
—
1000
—
1.3
1.0
0.85
2.0
1.5
—
3500
+
max
—
2.4
1.6
1.8
3.8
2.4
100
—
V
V
mA
V
µA
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
t
toff
on
Turn-on time
Turn-off time
CL = 15pF (note 1)
TIMING DIAGRAMNOTE 1 TEST CIRCUIT
O
OPEN
V
R
L
OUTPUT
L
INPUT
Measured device
PG
50Ω C
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
V
P
= 8V
(2) Input-output conditions : RL = 25Ω, VO = 10V
(3) Electrostatic capacity C
connections and input capacitance at probes
P-P
O
= 50Ω
L
includes floating capacitance at
Limits
min typ max
—
—
35
760
—
—
ns
ns
Aug. 1999
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