MITSUBISHI M54530P, M54530FP User Manual

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54530P/FP

7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION

M54530P and M54530FP are seven-circuit Darlington tran­sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.

FEATURES

Á High breakdown voltage (BV

CEO ≥ 40V)

Á High-current driving (Ic(max) = 400mA)
Á With clamping diodes
Á Driving available with PMOS IC output
Á Wide operating temperature range (Ta = –20 to +75°C)

APPLICATION

Drives of relays and printers, digit drives of indication ele­ments (LEDs and lamps), and MOS-bipolar logic IC inter­faces

PIN CONFIGURATION










INPUT OUTPUT









IN2→
IN3→
IN4→
IN5→
IN6→
IN7→

GND

1IN1→
2
3
4
5
6
7
8

16P4(P)

Package type 16P2N-A(FP)

CIRCUIT DIAGRAM

INPUT

20K

20K

2K

16
15
14
13
12
11
10



→O1




→O2




→O3





→O4




→O5




→O6




→O7



→COM COMMON

9

COM
OUTPUT

GND

FUNCTION

The M54530P and M54530FP each have seven circuits con-

The diode, indicated with the dotted line, is parasitic, and cannot
be used.

sisting of NPN Darlington transistors. These ICs have resis­tance of 20kΩ between input transistor bases and input pins.
A spike-killer clamping diode is provided between each out­put pin (collector) and COM pin (pin 9). The output transistor
emitters are all connected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54530FP is enclosed in a molded small flat package,
enabling space-saving design.

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)

VCEO
IC
VI
IF
VR
Pd
Topr
Tstg

Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature

Output, H
Current per circuit output, L

Ta = 25°C, when mounted on board

The seven circuits share the COM and GND.

RatingsSymbol Parameter Conditions Unit

–0.5 ~ +40

400

–0.5 ~ +40

400

40

1.47(P)/1.00(FP)
–20 ~ +75

–55 ~ +125

Unit : Ω

V

mA

V

mA

V

W

°C
°C

Aug. 1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

ton

50% 50%

50% 50%

toff

INPUT

OUTPUT

M54530P/FP

7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)

Limits

0
0

0
8

5
0

—
—

—

400

200

—
—
—

VO

IC

VIH
VIL

ParameterSymbol

Output voltage
Collector current

(Current per 1 cir­cuit when 7 circuits
are coming on si­multaneously)

“H” input voltage
“L” input voltage

Duty Cycle
P : no more than 8%
FP : no more than 6%

Duty Cycle
P : no more thn 30%
FP : no more than 25%

C ≤ 400mA

I

C ≤ 200mA

I

min typ max

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

VCE (sat)

I

I

VF
IR
hFE

+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any

conditions.

Collector-emitter breakdown voltage
Collector-emitter saturation voltage

Input current
Clamping diode forward voltage

Clamping diode reverse current
DC amplification factor

ICEO = 100µA

I = 8V, IC = 400mA

V

I = 5V, IC = 200mA

V

I = 17V

V

I = 35V

V

F = 400mA

I

R = 40V

V

CE = 4V, IC = 300mA, Ta = 25°C

V

0.5

40

35

Unit

V

mA

V
V

Limits

min typ

40
—
—
—
—
—
—

1000

—

1.3

1.0

0.85

2.0

1.5

—

3500

+

max

—

2.4

1.6

1.8

3.8

2.4

100

—

V
V

mA

V
µA
—

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

t
toff

on

Turn-on time
Turn-off time

CL = 15pF (note 1)

TIMING DIAGRAMNOTE 1 TEST CIRCUIT

O

OPEN

V

R

L

OUTPUT

L

INPUT

Measured device

PG

50Ω C

(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
V

P

= 8V
(2) Input-output conditions : RL = 25Ω, VO = 10V
(3) Electrostatic capacity C
connections and input capacitance at probes

P-P

O

= 50Ω

L

includes floating capacitance at

Limits

min typ max

—
—

35

760

—
—

ns
ns

Aug. 1999

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54530P/FP

7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

Thermal Derating Factor Characteristics

2.0

M54530P

1.5

M54530FP

1.0

0.5

Power dissipation Pd (W)

0

0

25 50 75 100

Ambient temperature Ta (°C)

Duty-Cycle-Collector Characteristics

500

(M54530P)

400

300

200

•The collector current values
represent the current per circuit.

Collector current Ic (mA)

100

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 25°C

0

20 40 60 80 100

0

Output Saturation Voltage

Collector Current Characteristics

400

VI = 5V

300

200

100

Collector current Ic (mA)

Ta = 75°C

0

0

0.5 1.0 1.5 2.0

Output saturation voltage V

Ta = 25°C

Ta = –20°C

CE

(sat) (V)

Duty-Cycle-Collector Characteristics

500

➀

400

(M54530P)

➀

➁

300

➂
➃

➄
➅
➆

200

•The collector current values
represent the current per circuit.

Collector current Ic (mA)

100

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 75°C

0

0

20 40 60 80 100

➁
➂

➃
➄
➅
➆

Duty cycle (%)

Duty-Cycle-Collector Characteristics

500

(M54530FP)

400

300

200

•The collector current values
represent the current per circuit.

Collector current Ic (mA)

100

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 25°C

0

20 40 60 80 100

0

Duty cycle (%)

Duty cycle (%)

Duty-Cycle-Collector Characteristics

500

➀

400

300

(M54530FP)

➀

➁
➂

➃
➄

➅

➆

200

•The collector current values

Collector current Ic (mA)

100

represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit. •Ta = 75°C

0

20 40 60 80 100

0

➁
➂

➃
➄

➅

➆

Duty cycle (%)

Aug. 1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54530P/FP

7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DC Amplification Factor

Collector Current Characteristics

4

10

VCE = 4V

7
5

FE

3
2

3

10

7
5

3

DC amplification factor h

2

2

10

1

10

23 57

Collector current Ic (mA)

Input Characteristics

2.0

1.5

(mA)

I

1.0

Ta = 75°C

2

10

Ta = –20°C

Ta = 25°C

Ta = –20°C

23 57

10

Grounded Emitter Transfer Characteristics

400

VCE = 4V

300

200

100

Collector current Ic (mA)

3

0

0

Ta = 75°C

Ta = 25°C

Ta = –20°C

1234

Input voltage V

I

(V)

Clamping Diode Characteristics

400

(mA)

300

F

200

Input current I

0.5

0

0

Ta = 25°C

Ta = 75°C

5 10152025

Input voltage V

I

(V)

100

0

0

Ta = 75°C

0.5 1.0 1.5 2.0

Forward bias current I

Forward bias voltage V

Ta = 25°C

Ta = –20°C

F

(V)

Aug. 1999