MITSUBISHI M54525AGP User Guide
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M54525AGP is seven-circuit Darlington transistor array with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
FEATURES
●
High breakdown voltage (BVCEO ≥ 50V)
●
High-current driving (IC(max) = 500mA )
●
With clamping diodes
●
Driving available with PMOS IC output of 24V
●
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
PIN CONFIGURATION
→
IN1
→
IN2
→
IN3
INPUT
IN4
IN5
IN6
IN7→
GND
→
→
→
Package type
CIRCUIT DIAGRAM
INPUT
10.5k
Vz=7V
5k
1
2
3
4
5
6
7
8
→
16
O1
→
15
O2
→
14
O3
→
13
O4
→O5
12
→
11
O6
→O7
10
9
COM COMMON
OUTPUT
16P2S-A
COM
OUTPUT
FUNCTION
The M54525AGP has seven circuits consisting of NPN
Darlington transistors. This IC has resistance of 10.5kΩ and
Zener diode between input transistor bases and input pins.
A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor
emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply
voltage is 50V maximum. The M54525AGP is enclosed in
molded small flat package, enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
3k
The seven circuits share COM and GND.
The diode, indicated with the dotted line, parasitic, and cannot
be used.
GND
Unit: Ω
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +50
500
–0.5 ~ +30
500
50
0.80
–40 ~ +85
–55 ~ +125
V
mA
V
mA
V
W
°C
°C
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
17
Limits
0
0
—
—
400
50
Unit
V
mA
0
—
—
0
—
200
25
V
6
V
Symbol
O Output voltage
V
Collector current
(Current per 1 cir-
IC
cuit when 7 circuits
are coming on si-
multaneously)
VIH
VIL
“H” input voltage
“L” input voltage
Parameter
Duty Cycle no more
than 4%
Duty Cycle no more
than 15%
min typ max
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
V
CE(sat)
II
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
CEO = 100µA
I
I = 500µA, IC = 350mA
I
I
I = 350µA, IC = 200mA
I = 250µA, IC = 100mA
I
V
I
F = 350mA
V
V
I = 17V
R = 50V
CE = 2V, IC = 350mA
M54525AGP
Limits
min typ max
50
—
—
—
—
—
—
—
1000
1.2
1.0
0.9
0.8
1.3
—
2000
100
—
1.6
1.3
1.1
1.3
2.0
—
V
V
mA
V
µA
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
t
on
toff
NOTE 1 TEST CIRCUIT
Turn-on time
Turn-off time
INPUT Vo
Measured device
PG
50Ω
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, V
(2)Input-output conditions : R
(3)Electrostatic capacity C
at connections and input capacitance at probes
L
L
includes floating capacitance
CL = 15pF (note 1)
OPEN
= 25Ω, Vo = 10V
R
C
IH
= 17V
TIMING DIAGRAM
L
OUTPUT
L
INPUT
OUTPUT
Limits
min typ max
—
—
ton toff
5
100
50%50%
—
—
ns
ns
50%50%
Feb.2003
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