MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M54525AGP is seven-circuit Darlington transistor array with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
FEATURES
●
High breakdown voltage (BVCEO ≥ 50V)
●
High-current driving (IC(max) = 500mA )
●
With clamping diodes
●
Driving available with PMOS IC output of 24V
●
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
PIN CONFIGURATION
→
IN1
→
IN2
→
IN3
INPUT
IN4
IN5
IN6
IN7→
GND
→
→
→
Package type
CIRCUIT DIAGRAM
INPUT
10.5k
Vz=7V
5k
1
2
3
4
5
6
7
8
→
16
O1
→
15
O2
→
14
O3
→
13
O4
→O5
12
→
11
O6
→O7
10
9
COM COMMON
OUTPUT
16P2S-A
COM
OUTPUT
FUNCTION
The M54525AGP has seven circuits consisting of NPN
Darlington transistors. This IC has resistance of 10.5kΩ and
Zener diode between input transistor bases and input pins.
A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor
emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply
voltage is 50V maximum. The M54525AGP is enclosed in
molded small flat package, enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
3k
The seven circuits share COM and GND.
The diode, indicated with the dotted line, parasitic, and cannot
be used.
GND
Unit: Ω
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +50
500
–0.5 ~ +30
500
50
0.80
–40 ~ +85
–55 ~ +125
V
mA
V
mA
V
W
°C
°C
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
17
Limits
0
0
—
—
400
50
Unit
V
mA
0
—
—
0
—
200
25
V
6
V
Symbol
O Output voltage
V
Collector current
(Current per 1 cir-
IC
cuit when 7 circuits
are coming on si-
multaneously)
VIH
VIL
“H” input voltage
“L” input voltage
Parameter
Duty Cycle no more
than 4%
Duty Cycle no more
than 15%
min typ max
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
V
CE(sat)
II
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
CEO = 100µA
I
I = 500µA, IC = 350mA
I
I
I = 350µA, IC = 200mA
I = 250µA, IC = 100mA
I
V
I
F = 350mA
V
V
I = 17V
R = 50V
CE = 2V, IC = 350mA
M54525AGP
Limits
min typ max
50
—
—
—
—
—
—
—
1000
1.2
1.0
0.9
0.8
1.3
—
2000
100
—
1.6
1.3
1.1
1.3
2.0
—
V
V
mA
V
µA
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
t
on
toff
NOTE 1 TEST CIRCUIT
Turn-on time
Turn-off time
INPUT Vo
Measured device
PG
50Ω
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, V
(2)Input-output conditions : R
(3)Electrostatic capacity C
at connections and input capacitance at probes
L
L
includes floating capacitance
CL = 15pF (note 1)
OPEN
= 25Ω, Vo = 10V
R
C
IH
= 17V
TIMING DIAGRAM
L
OUTPUT
L
INPUT
OUTPUT
Limits
min typ max
—
—
ton toff
5
100
50%50%
—
—
ns
ns
50%50%
Feb.2003
TYPICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Thermal Derating Factor Characteristics
1.0
0.8
0.6
0.4
0.2
Power dissipation Pd (W)
0
0 25 50 75 100
Ambient temperature Ta (°C)
Duty Cycle-Collector Characteristics Duty Cycle-Collector Characteristics
500
400
300
200
•The collector current values
represent the current per circuit.
Collector current Ic (mA)
100
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
0
20 40 60 80
0.416
85
100
Output Saturation Voltage
Collector Current Characteristics
500
II = 500µA
400
300
200
Collector current Ic (mA)
100
Ta = 85°C
0
0 0.5 1.0 1.5 2.0
Output saturation voltage V
Ta = 25°C
Ta = –40°C
CE(sat)
(V)
500
400
1
300
100
1
2
3
4
5
6
7
2
3
4
5
6
7
200
•
The collector current values
100
Collector current Ic (mA)
represent the current per circuit.
•
Repeated frequency ≥ 10Hz
•
The value the circle represents the
value of the simultaneously-operated circuit.
0
20 40 60 80
0
•Ta = 85°C
10
HE
10
DC amplification factor h
10
Duty cycle (%)
DC amplification Factor
Collector Current Characteristics
4
VCE = 2V
7
5
3
2
3
7
5
3
2
2
1
10
Ta = 85°C
23 57 23 57
10
2
Collector current Ic (mA)
Ta = 25°C
Ta = –40°C
10
Duty cycle (%)
Grounded Emitter Transfer Characteristics
500
VCE = 2V
400
300
200
Collector current Ic (mA)
100
0
3
0
0
Ta = 85°C
Ta = 25°C
24 810
6121416
I
Input voltage V
(V)
Ta = –40°C
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Input Characteristics
3
2
(mA)
I
Ta = –40°C
Ta = 25°C
1
Input current I
0
0 5 10 15 25
Input voltage V
20
I
(V)
Ta = 85°C
30
Clamping Diode Characteristics
500
400
(mA)
F
300
200
100
Forward bias current I
Ta = 85°C
0
0 0.5 1.0 1.5 2.0
Forward bias voltage V
Ta = 25°C
Ta = –40°C
F
(V)
Feb.2003
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