Mitsubishi Electric Corporation Semiconductor Group FD500JV-90DA Datasheet

MITSUBISHI SOFT RECOVERY DIODES

FD500JV-90DA

HIGH POWER, HIGH FREQUENCY,

PRESS PACK TYPE

FD500JV-90DA

¡IF(AV) Average forward current ....................... 500A

RRM

¡V
¡Q

Repetitive peak reverse voltage

RR Reverse recovery charge .................1500µC

................... 4500V

¡Press pack type

APPLICATION

Clamp diode for GCT Thyr istor

OUTLINE DRAWING Dimensions in mm

φ3.5 ± 0.2

2.2 ± 0.2DEPTH

φ47

TYPE NAME

φ3.5 ± 0.2

2.2 ± 0.2DEPTH

0.4MIN0.4MIN

26 ± 0.5

φ75MAX

High-power inverters
Power supplies as high frequency rectifiers

MAXIMUM RATINGS

Parameter

VRRM
VRSM
VR(DC)

Symbol Parameter UnitRatings

F(RMS)

I
IF(AV)
IFSM

2

I

t

di/dt
Tj

Tstg

Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage

RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Critical rate of rise of reverse
recovery current
Junction temperature
Storage temperature
Mounting force required

—

Weight

—

Conditions
Applied for all conduction angles
f = 60Hz, sine wave θ = 180°, T

One half cycle at 60Hz, T

I

FM =500A, VR ≤ 2250V, Tj = 125°C (Fig. 1 and Fig. 2)

(Recommended value 23.5kN)
Typical 530g

j =125°C

Voltage class

4500
4500
3600

f =76°C

4.2× 10

–20 ~ 125
–40 ~ 150

22 ~ 28

785
500

10

2000

—

UnitSymbol

V
V
V

A
A

5

kA

2

A

A/µs

°C
°C

kN

g

s

Feb.1999

MITSUBISHI SOFT RECOVERY DIODES

FD500JV-90DA

HIGH POWER, HIGH FREQUENCY,

PRESS PACK TYPE

ELECTRICAL CHARACTERISTICS

Symbol Parameter Test conditions

IRRM
VFM
QRR
Erec
tb/ta

FP

V
Rth(j-f)

Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Reverse recovery loss
Soft recovery rate
Forward recovery voltage
Thermal resistance

VRM = 4500V, Tj = 125°C

FM = 1570A, Tj = 125°C

I

FM = 500A, di/dt = 1000A/µs, VR = 2250V, Tj = 125°C

I
(Refer to Fig. 1 and Fig. 2)

i/dt = 1000A/µs, Tj = 25°C

d
Junction to fin

Min. Typ. Max.

Fig. 1 (Definition of reverse recovery waveform) Fig. 2 (Reverse recovery test circuit)

Limits

—
—
—
—
—
—
—

—
—
—

4.0
2

100

—

80

3.5

1500

—
—
—

.027

Unit
mA

V

µC

J/P

—

V

°C/W

QRR = (trr × IRM)/2

d

i/dt

50%IFM

IFM

ta tb

0

(0~50%IFM) (Note 1)

trr

IRM

50%IRM

90%IRM

Note 1
In case of 2000A/µs, definition of d

i/dt = VD/L (line) = 2250V/1.125µH = 2000A/µs

d

i/dt is by VD and inductance value of L (line) as follows.

L(line)

L(load)

VD = 2250V

GCT

FD500JV

CD

Cc

i

di/dt = VD/L(line) = 2250V/1.125µH = 2000A (Note 1)

Rc

Cc : 6µF
Rc = 2Ω

Feb.1999