Mitsubishi Electric Corporation Semiconductor Group CR10C Datasheet
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR10C
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR10C
•IT (AV) .........................................................................10A
•V
DRM .................................................... 400V/600V/800V
GT ..........................................................................30mA
•I
OUTLINE DRAWING
(16.2)
φ2.0 MIN
1
3
2
CATHODE
1
ANODE
2
GATE
3
LOCK WASHER
3
1.9 MIN
19.5 MAX
10 MAX
NUT
Note: Mica washer and spacer are
provided only upon request.
Dimensions
in mm
14
1
φ8.7 MAX
3 MIN
26 MAX
11 MIN
2
M6×1
SOLDERLESS TERMINAL
TELEGRAPH WIRE
1.04~2.63mm
2
APPLICATION
DC motor control, electric furnace control, static switches, DC supply
MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VDRM
Symbol
I
T (RMS)
IT (AV)
ITSM
2
t
I
di/dt
P
GM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Parameter
RMS on-state current
Average on-state current
Surge on-state current
2
I
t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mounting torque
—
Weight
—
8
400
500
400
Commercial frequency, sine half wave, 180° conduction, T
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
D=1/2VDRM, ITM=30A, IG=0.1A. Tj=25°C, f=60Hz
V
Typical value
Voltage class
12
600
720
600
Conditions
c=84°C
16
800
960
800
Ratings
15.5
200
165
100
5.0
0.5
–30 ~ +125
–30 ~ +125
2.94
8.8
Unit
V
V
V
Unit
A
10
10
5
2
30
A
A
2
A
A/µs
W
W
V
V
A
°C
°C
kg·cm
N·cm
g
s
Feb.1999
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM
dv/dt
V
GT
VGD
IGT
tgt
Rth (j-c)
Rth (j-c)
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical-rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Turn-on time
Thermal resistance
Contact thermal resistance
Parameter
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Test conditions
j=125°C, VRRM applied
T
T
j=125°C, VDRM applied
T
c=25°C, ITM=30A, Instantaneous value
T
j=125°C, VD=2/3VDRM
Tj=25°C, VD=6V, IT=0.5A
T
j=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, IT=0.5A
T
c=25°C, VD=100V, IT=10A, IG=0.1A
Junction to case
Case to fin, greased
CR10C
MEDIUM POWER USE
Limits
Max.
Typ.
Min.
3.0
—
—
3.0
—
—
1.6
—
—
—
—
20
2.5
—
—
—
0.25
—
30
—
—
10
—
—
2.0
—
—
0.55
—
—
Unit
mA
mA
V
V/µs
V
V
mA
µs
°C/W
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
3
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
ON-STATE CURRENT (A)
3
2
0
10
0.5 1.0 1.5 2.0 2.5 3.00
ON-STATE VOLTAGE (V)
Tc = 125°C
125°C
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
SURGE ON-STATE CURRENT (A)
0
10023 5710
44
1
23 5710
CONDUCTION TIME
(CYCLES AT 60Hz)
2
Feb.1999
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